Top Results
| Part | Manufacturer | Description | Datasheet | BUY |
|---|---|---|---|---|
| HM4-6617B/883 | Intersil Corporation | 2KX8 OTPROM, 105ns, CQCC32 |  |
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| HM6-6642B/883 | Intersil Corporation | 512X8 OTPROM, 140ns, CDIP24 | |
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| HM6-6617/883 | Intersil Corporation | 2KX8 OTPROM, 140ns, CDIP24 | |
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| HM1-65642B/883 | Intersil Corporation | 8KX8 STANDARD SRAM, 150ns, CDIP28 | |
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| 24502BVA | Intersil Corporation | 1KX4 STANDARD SRAM, 120ns, CDIP18 | |
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| CS82C37A | Intersil Corporation | 4 CHANNEL(S), 8MHz, DMA CONTROLLER, PQCC44 | |
27128 memory
| Catalog Datasheet | MFG & Type | Document Tags | |
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EEPROM 2864Abstract: bytek pose a problem. When a 27128 memory is used, its full 16-Kbyte address range of $C000$FFFF is , the facility to verify the contents of the MCU's internal or external memory against code held on a , accessible, and reads from these memory locations will result, respectively, in irrelevant data or external memory fetches. An additional consequence of bootstrap operation is that all vectors are relocated to , detail the memory map of the bootstrap vectors and an example RAM jump table. Note that before any |
Motorola Original |
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EEPROM 2864Abstract: 2864 eeprom 2864 with a 27128 16-Kbyte EEPROM memory. An important outcome of this is that, when a 2864 is used , practice, this should never pose a problem. When a 27128 memory is used, its full 16-Kbyte address range , software incorporates the facility to verify the contents of the MCU's internal or external memory against , accessible, and reads from these memory locations will result, respectively, in irrelevant data or external memory fetches. Freescale Semiconductor, Inc. An additional consequence of bootstrap operation is |
Freescale Semiconductor Original |
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TBA 129Abstract: EEPROM 2864 inclusion permits the replacement of the 2864 with a 27128 16-Kbyte EEPROM memory. An important outcome of , -Kbyte range of $E000$FFFF. In practice, this should never pose a problem. When a 27128 memory is used, its , 's internal or external memory against code held on a PC disc. Both program and verify options use data , not accessible, and reads from these memory locations will result, respectively, in irrelevant data or external memory fetches. An additional consequence of bootstrap operation is that all vectors are |
Motorola Original |
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2864 EEPROM 28 PINSAbstract: EEPROM 2864 by the 2864, its inclusion permits the replacement of the 2864 with a 27128 16-Kbyte EEPROM memory , . When a 27128 memory is used, its full 16-Kbyte address range of $C000$FFFF is available to the MCU , memory against code held on a PC disc. Both program and verify options use data supplied in S record , not accessible, and reads from these memory locations will result, respectively, in irrelevant data or external memory fetches. Freescale Semiconductor, Inc. An additional consequence of |
Motorola Original |
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INTEL 27128Abstract: 27128-3 Max. inteligent ProgrammingTM Algorithm The Intel 27128 is a 5V only, 131,072-bit ultraviolet erasable and electrically programmable read-only memory (EPROM). The standard 27128 access time is 250 ns , 27128. Output OR-Tieing Because EPROMs are usually used in larger memory arrays, Intel has provided , intei 27128 128K (16K x 8) UV ERASABLE PROM 250 ns Maximum Access Time . . . HMOS*-E Technology , systems the 27128 allows the microprocessor to operate without the addition of WAIT states. The 27128 is |
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27128 pin diagramAbstract: intel EPROM 27128 Operations Compatible with 2764A, 27128, 27256 ± 10% Vcc Tolerance Available The Intel 27128 is a 5V only, 131,072-bit ultraviolet erasable and electrically programmable read-only memory (EPROM). The 27128A is an advanced version of the 27128 and is fabricated with Intel's HMOS ll-E technology which , producibility. The typical 27128A access time is 200 ns which is an improvement over the 27128 standard time of , 27128 and then rapidly program it using an efficient pro gramming method. The 27128 also offers reduced |
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27128 ROM pin configurationAbstract: pin diagram of ic 2764 2764 64K EPROM 27128 128K EPROM November 1989 Features Fast Access Times at 0° to 70° C · 2764- 160 ns · 27123 - 200 ns Programmed Using Intelligent Algorithm · 21 V Vpp - 2 Minutes for 27128 · 1 Minute for 2764 JEDEC Approved Bytewlde Pin Configuration · 2764 8K x 8 Organization · 27128 16K , Extended Temperature Range Available Silicon Signature® Pin Configuration 2764/27128 vpp c 1 A 12 £ 2 , and 27128 are ultraviolet light erasable EPROMs which are organized 8K x 8 and 16K x 8 respectively |
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INTEL 2764Abstract: 27128 eprom . Intel's process and product technology advances have increased EPROM memory storage capabilities from 2K bits to 2S6K bits. This non-volatile memory can allow the designer a more reliable, user-friendly , the 27256, concentrating on those factors which will be new to the EPROM memory designer. TH E , alternative to the 50 msec per byte programm ing techniques for Intel's 2764 and 27128 EPROMs. By taking , Algorithms used for Intel's 2764 and 27128 EPROMs. It is now available as a standard feature in many PROM |
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EPROM M2764Abstract: seeq 2764 Temperature Range) 2764/27128 EPROM November 1989 Features â Military and Extended Temperature Range â , ' Programming Voltage â JEDEC Approved Bytewlde Pin Configuration â'¢ 2764 8Kx 8 Organization â'¢ 27128 16K , Silicon Signature® Description SEEQ's 2764 and 27128 are ultraviolet light erasable EPROMs which are , Pin Names MEMORY ARRAY COLUMN ADORESS GATING I/O BUFFER T X can be either V1L or VIH 'For Silicon , M2764/M27128 E27128/E27128 this fast algorithm for SEEQ's EPROMs. If desired, the 27128 and the 2764 |
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M2764 M27128 EPROM M2764 seeq 2764 EPROM 27128 27128 27128 eprom 2764 block diagram E2764/E27128 MD400011/A 125-C |
MB831000Abstract: 831000-15 CMOS 1M-BIT MASK-PROGRAMMABLE READ ONLY MEMORY MB831000-15 MB831000-20 N ovem ber 1987 E d itio n 2 .0 1M-BIT (131,072 x 8) CMOS READ ONLY MEMORY The Fujitsu MB 831000 is a CMOS Si*gate mask-programmable static read only memory organized as 131,072 words by 8 bits. The MB 831000 has TTL-com patible I , : When the customer releases his Mask ROM Data in the fo rm o f EPROMs, he should use 8 pcs o f MBM 27128 , 27128 EPROM. Fujitsu requires 3 sets, to ta l 24 pcs, o f such programmed EPROMs. IT w o sets, to ta l |
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MB831000 831000-15 831000 ic rom 27128 IC 27128 B8310 DIP-28P-M02 B831000-20 28-LEAD |
EPROM 27128Abstract: EPROM M2764 /27128 EPROM November 1989 Features Pin Configuration DUAL-IN -LINE TOP VIEW Military and , Programming Voltage JEDEC Approved Bytewlde Pin Configuration · 2764 8 K x 8 Organization · 27128 16Kx 8 , 27128 are ultraviolet light erasable EPROMs which are organized 8K x 8 and 16K x 8 respectively. They , MEMORY ARRAY Mode Selection PINS S Ë Ü E POM M O D I s " " ^ (20) (22) (27) Read Output Disable , algorithm for SEEO's EPROMs. If desired, the 27128 and the 2764 may be programmed using the conventional 50 |
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seeq 27128 27128 EPROM specification mm27128 27128 block diagram OPW13 |
| Abstract: /27128 EPROM November 1989 Pin Configuration Features â Military and Extended Temperature , JEDEC Approved Bytewlde Pin Configuration â'¢ 2764 8K x 8 Organization â'¢ 27128 16K x 8 Organization , ° 5 16 J ° 4 GND C 14 Description â¡ *8 13 °o L SEEOâ's 2764 and 27128 are , J ° 3 PIN 26 IS A NO CONNECT ON THE CM 2764. P Block Diagram Ar MEMORY ARRAY ROW , algorithm for SEEQ's EPROMs. If desired, the 27128 and the 2764 may be programmed using the conventional |
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M27123 |
st 27128Abstract: 27128 prom eeeo 2764 64K EPROM 27128 128K EPROM N ovem ber 1989 Pin Configuration Features â , Intelligent Algorithm â'¢ 21 V VFP â'¢ Minutes for 27128 2 â'¢1 Minute for 2764 â JEDEC Approved Bytewlde Pin Configuration â'¢ 2764 8 K x 8 Organization â'¢ 27128 16K x 8 Organization 2764/27128 , . SE E Q â's 2764 an d 27128 are ultraviolet light erasable E PROM s which are organized 8 K x 8 a n , Block Diagram ROW DECODERS MEMORY ARRAY COLUMN DECODER ar COLUMN ADDRESS GATING |
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st 27128 27128 prom 2764 EPROM specification MD400010/A |
EPROM M2764Abstract: SEEQ eprom JEDEC Approved Bytewlde Pin Configuration · 2764 8 K x 8 Organization · 27128 16K x 8 Organization Low , Description SEEQ's 2764 and 27128 are ultraviolet light erasable EPROMs which are organized 8 K x 8 and 16K x , DECODERS MEMORY ARRAY Mode Selection PINS CE OE PGM Vpp V Cc Outputs M O D E ^ \ ^ (20) (22) (27) (1 , 's EPROMs. If desired, the 27128 and the 2764 may be programmed using the conventional 50 ms programming specification o f older generation EPROMs. Incorporated on the 27128 a n d 2764 is Silicon Signature. Silicon |
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SEEQ eprom AM2764 D2764 E--40 |
MB831000Abstract: IC 27128 FUJITSU CMOS 1M-BIT MASK-PROGRAMMABLE READ ONLY MEMORY MB831000-15 MB831000-20 November 1987 Edition 2.0 1M-BIT (131,072x8) CMOS READ ONLY MEMORY The F u jits u M B 8 3 1 0 0 0 is a C M O S Si-gate m ask-p rog ram m able s ta tic read o n ly m e m o ry organized as 1 3 1 ,0 7 2 w o rd s , K ) 96 K) A3 A2 A1 LSB AO MBM 27128 MBM 27128 MBM 27128 MBM 27128 MBM 27128 MBM 27128 MBM 27128 MBM 27128 16 K to 32 K to 4 8 K to 6 4 K to 8 0 K to 9 6 K to 112 K) 112 K t o 128 K ) · |
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83100 mb83 bm27c 03B92 |
EPROM 27128Abstract: CQM1-ME04k socket on the Memory Cassette. Model ROM version Capacity Access speed ROM-ID-B 27128 or , Memory Cassettes Memory Cassettes An optional Memory Cassette can be used to store the user , Memory Cassette and rebooting the PLC. EEPROM: Flash Memory: EPROM: CQM1-ME04K CQM1-ME04R CQM1-ME08K CQM1-ME08R CQM1H-ME16K CQM1H-ME16R CQM1-MP08K CQM1-MP08R Available Memory Cassettes The following Memory Cassettes are available. Memory EEPROM EPROM Flash Model CQM1-ME04K |
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ROM-JD-B EEPROM 27128 27256 rom 27512 CQM1 27128 equivalent |
CTD 43Abstract: CTD 46 / Din-Sized Enclosure cBuilt-In Alarm Control of AC/DC Current/Voltage without Memory 16 c5 Temperature , °F or 199 to 999°C and will accept J, Control of AC/DC Current/Voltage with Memory K, L, or N type , .EACH 271.28 793-2610 84871309 HDIH 120 VAC 0.1 to 10 A 128.25 793-3218. 89422112. CTD 46, Transistor output, 24 271.28 |
Allied Electronics Catalog Original |
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CTD 43 CTD 46 crouzet ctd 43 84871009 transistor 7333 84871102 |
82288Abstract: 27128 state generation logic â ROM chip select for 27128 or 27256 â Built-in memory controller Turbo , controller, bus swap logic, coprocessor interface logic, memory decoder, command delay and wait state , Gen 82288 Bus Controller BUS Conversion 287 Interface Control Walt State Generator Memory |
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82288 80287 27256 block diagram INTEL 27128 |
SYSTEM CONTROLLERAbstract: 27128 memory logic â ROM chip select for 27128 or 27256 â Built-in memory controller â Turbo speed change , logic, coprocessor interface logic, memory decoder, command delay and wait state generation circuits , 82288 Bus Controller BUS Conversion 287 Interface Control Wait State Generator Memory Controller Shut |
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SYSTEM CONTROLLER 27128 memory bus controller 002GD1 |
27128 ROM pin configurationAbstract: INTEL 27128 MITSUBISHI LSIs M5M23128-XXXP 131072-BIT(16384-WORD BY 8-BIT)MASK-PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M23128-XXXP is a 131072-bit mask-programmable high speed read-only memory. The M5M23128-XXXP is fabricated by N-channel polysilicon gate technology and available in a 28-pin DIL package. It is interchangeable with the M5L27128K and Intel 27128 in read mode. The XXX in type code is a , TTL-compatible â'¢ Standard 28-pin DIL package â'¢ Interchangeable with the M5L27128K and Intel 27128 FUNCTION |
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27128 ROM pin configuration M5M23128XXXP 28P4 27128 pin diagram |
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