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| Part Number | Manufacturer | Description | |||||
| 1. |  26N90 |
IXYS Corporation | HiPerFET Power MOSFETs | 114.19 Kb | 4 Pg. |
| « Previous 1 Next » |
| 1. |  114.19 Kb • 4 Pages |
Abstract: ... ID25 TC = 25C 26N90 26 A. 25N90 25. IDM TC = 25C, pulse width limited by TJM 26N90 104 A. 25N90 100. IAR TC = 25C 26N90 26 A. 25N90 25. EAR TC = 25 C 64 mJ. EAS TC = 25 C 3 J. dv/dt IS IDM, di/dt 100 A/s, VDD VDSS 5 V/ns. TJ 150C ... Labels: 26N90 |
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| 2. |  139.81 Kb • 4 Pages |
Abstract: ... RDS(on) VGS = 10 V, ID = 0.5 ID25 26N90 0.30. Pulse test, t 300 s, duty cycle d 2 % 25N90 0.33. Symbol Test Conditions Maximum Ratings. VDSS TJ = 25C to 150C 900 V. VDGR TJ = 25C to 150C; RGS = 1 M 900 V. VGS Continuous ... Labels: 26N90 |
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| 3. |  125.6 Kb • 4 Pages |
Abstract: ... ID25 TC = 25°C 26N90 26 A. 25N90 25. IDM TC = 25°C, pulse width limited by TJM 26N90 104 A. 25N90 100. IAR TC = 25°C 26N90 26 A. 25N90 25. EAR TC = 25° C 64 mJ. EAS TC = 25° C 3 J. dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS ... Labels: 26N90 |
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