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256MB Datasheet

Part Manufacturer Description PDF Type
256MBDDRSDRAM Samsung Electronics DDR SDRAM Specification Version 0.3 Original

256MB

Catalog Datasheet MFG & Type PDF Document Tags

MICRON mcp

Abstract: P30-65nm Parameter Die 256Mb VSS DQ[15:0] A[MAX:1] WAIT PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb.pdf - , 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30 , VCCQ (I/O) voltage: 1.7V to 3.6V ­ Standy current: 65µA (TYP) for 256Mb ­ 52 MHz continuous synchronous , ) command set compatible ­ Common flash interface · Density and Packaging ­ 56-lead TSOP package (256Mb only) ­ 64-ball Easy BGA package (256Mb, 512Mb) ­ QUAD+ and SCSP packages (256Mb, 512Mb) ­ 16-bit wide
Micron Technology
Original
MICRON mcp P30-65nm PC28F256P PC28F256P30B PC28F256P30BFF PF48F4400P0VBQEF P30-65 JS28F256P30B/TF RC28F256P30B/TF PC28F256P30B/TF RD48F4400P0VBQE

js28f256p

Abstract: RC48F4400P0TB0EJ 256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory , Packaging â'" 56-lead TSOP package (256Mb only) â'" 64-ball Easy BGA package (256Mb, 512Mb) â'" QUAD+ and SCSP packages (256Mb, 512Mb) â'" 16-bit wide data bus â'¢ Quality and reliabilty â'" JESD47 , current: 65µA (TYP) for 256Mb â'" 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667ad p33_65nm_MLC_256Mb-512mb.pdf - Rev. B 12/13 EN 1 Micron Technology, Inc
Micron Technology
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RC48F4400P0TB0EJ js28f256p P33-65 RC28F256P33TFE RC28F256P33BFE RC28F256P33BFF PC28F256P33TFE

PF38F4060M0Y3DF

Abstract: PF38F3040 256Mb M PSRAM Uniform 1.8 1.8 Muxed x16 x16 LPCP - 56ball 11x8 mm 1Gb + 256SDR PF38F6070M0Y0BF 1Gb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 , PF38F5070M0Y0BE 512Mb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D- 105ball 9x11 mm 512MB + 256DDR MUX PF38F5070M0Y1EE 512Mb 256Mb M DDR Uniform 1.8 1.8 , 256Mb M DDR Uniform 1.8 1.8 Muxed x16 x16 X16SB - 165ball 9x11 mm 512Mb
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PF38F4060M0Y3DF PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 1024M PF58F0062M0Y1BF PF58F0033M0Y0BF PF58F0033M0Y1BF JZ58F0112M0Q0GE PF38F6066M0Y3DF

RC48F4400P0VB0E

Abstract: PC28F256P30BFF 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30 , VCCQ (I/O) voltage: 1.7V to 3.6V ­ Standy current: 65µA (TYP) for 256Mb ­ 52 MHz continuous synchronous , ) command set compatible ­ Common flash interface · Density and Packaging ­ 56-lead TSOP package (256Mb only) ­ 64-ball Easy BGA package (256Mb, 512Mb) ­ QUAD+ and SCSP packages (256Mb, 512Mb) ­ 16-bit wide , without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb and 512Mb (256Mb/256Mb), P30
Micron Technology
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RC48F4400P0VB0E pf48f4400p0vbqe rc28F256P30TFE PC48F4400P0VB0E PF48F4000P0ZB/TQE 14MB/ 32-KB
Abstract: /T PF48F4400P0VBQEF 512Mb (256Mb/256Mb) PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb , 16 KWord Block 0 512Mb (256Mb/256Mb), World Wide x16 Mode PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb , 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory , and Packaging â'" 56-lead TSOP package (256Mb only) â'" 64-ball Easy BGA package (256Mb, 512Mb) â'" QUAD+ and SCSP packages (256Mb, 512Mb) â'" 16-bit wide data bus â'¢ Quality and reliabilty â Micron Technology
Original
Abstract: PF48F4400P0VBQEF 512Mb (256Mb/256Mb) PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN , 16 KWord Block 0 512Mb (256Mb/256Mb), World Wide x16 Mode PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb , 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory , and Packaging â'" 56-lead TSOP package (256Mb only) â'" 64-ball Easy BGA package (256Mb, 512Mb) â'" QUAD+ and SCSP packages (256Mb, 512Mb) â'" 16-bit wide data bus â'¢ Quality and reliabilty â Micron Technology
Original

sandisk micro SD Card 2GB

Abstract: sandisk micro sd 128-01-010 MEDIAFO SD Personal Storage Disc 128 128 SD 256MB list 256-01-001 SILICON , Ultra+ My Flash 60X 128 128 Mini SD 256MB list 256-01-001 SAMSUNG Mini SD PLEOMAX , Micro SD 256 128 My flash super 128 128 Micro SD 256MB list 256-01-003 A-DATA , 256MB list 256-01-001 SAMSUNG MMC PLEOMAX 256 256-01-002 PalmOne MMC Memory , RS_MMC 256MB list RS MMC PLEOMAX 256 RS_MMC 512MB list 512-01-001 Kingston RS MMC 512
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sandisk micro SD Card 2GB sandisk micro sd SanDisk SDHC kingston sd 2GB kingston micro sd sd card 4gb sandisk SDC-16M SDC-32M 128MB 01G-84-021 02G-81-021 02G-84-021

K4S641632k uc60

Abstract: K4S561632J-UC60 Refresh 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K , 16 K4S561632H 256Mb J-die LC50/C60/C75 LL50/L60/L75 K4S560432H 4Banks 4K/64ms LVTTL K4S281632K 256Mb H-die Avail. 8M x 8 K4S280432K 4Banks Package 4M x 16 , compatibility with PC100. - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR , (II)*4 Now 256Mb H-die 4Banks K4S561632H UI60/I75 UP60/P75 16M x 16 LVTTL 8K
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K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 4K/64 8K/64 PC133 133MH 166MH M464S3254HUS
Abstract: 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 1 tRCD (ns , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 2 Micron Technology, Inc. reserves the right to change , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 5 78 80 82 83 84 85 86 Micron Technology
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MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133- 16M16

1gb pc133 SDRAM DIMM

Abstract: 512m pc133 SDRAM DIMM , 256MB, 512MB and 1GB. · The Best Solution for Slim / 1U Server System - Low Profile Registered DIMM , 1U RDIMM - Density: 128Mbyte & 256Mbyte - Status . The initial evaluation result shows no , . · x4 base 1U RDIMM - Density: 256Mbyte, 512Mbyte, 1Gbyte - Status . Under Evaluation . External , ( Composition ) # of Row (16Mb x8 * 9ea) 128Mb TSOP 1 (32Mb x4 * 18ea) 256MB (32Mx72) 1,200 mil 0.150 inch (3.810mm) 256Mb TSOP 1 (32Mb x8 * 9ea) 512MB (64Mx72) 1GB (128Mx72
Samsung Electronics
Original
1gb pc133 SDRAM DIMM 512m pc133 SDRAM DIMM PC133 SDRAM registered DIMM 512MB samsung sdram dimm layout M390S1723CTU-C75 M390S3253BTU-C75 PC133/PC100 M390S2858BTU M390S6450BTU M390S3253BTU M390S3320CTU M390S1723CTU

PPAP level submission requirement table

Abstract: 09005aef8091e6d1 0.8ns 0.8ns 0.8ns PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 1 Products , /decoder. PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 2 Micron Technology , . 88 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 3 Micron Technology , . 78 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 4 Micron Technology , . 79 81 83 84 85 86 87 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 5
Micron Technology
Original
PPAP level submission requirement table 09005aef8091e6d1 PC133 registered reference design AEC-Q100

TN-48-05

Abstract: PC133 registered reference design . 0.8ns 0.8ns PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN Setup CL = 2 CL = 3 Time , available at www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 2 Micron , . 86 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 3 Micron Technology, Inc , . 49 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 5 Micron Technology, Inc
Micron Technology
Original
TN-48-05 63 ball Vfbga thermal resistance MT48LC64M4A2TG
Abstract: 20 -7E 133 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN , 256Mb_sdr.pdf - Rev. V 07/14 EN 2 Micron Technology, Inc. reserves the right to change products or , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 5 78 80 82 83 84 85 86 Micron Technology
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Abstract: ADVANCE 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48V16M16LFFG, MT48H16M16LFFG­ 4 Meg x 16 , : 1. See page 58 for FBGA Device Marking Table. KEY TIMING PARAMETERS 256Mb SDRAM PART NUMBERS , (READ) latency 256Mb: x16 Mobile SDRAM MobileRamY26L_A.p65 ­ Pub. 5/02 1 Micron Technology , MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS. ADVANCE 256Mb: x16 MOBILE SDRAM 256Mb SDRAM , 54-BALL FBGA GENERAL DESCRIPTION The 256Mb SDRAM uses an internal pipelined architecture to Micron Technology
Original
NC/A12 MT48V16M16LFFG-8 MT48V16M16LFFG-10 MT48H16M16LFF-8

ELPIDA mobile dram LPDDR2

Abstract: infineon power cycling : 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 1 Products and specifications discussed , marking decoder is available at www.micron.com/decoder. PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 3 Micron , . 94 94 94 94 95 95 95 95 95 95 96 96 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev , ) . 90 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 5 Micron
Micron Technology
Original
ELPIDA mobile dram LPDDR2 infineon power cycling LPDDR2 SDRAM micron MT46H16M16LF MT46H8M32LF
Abstract: 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 1 tRCD (ns , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 2 Micron Technology, Inc. reserves the right to change , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 5 78 80 82 83 84 85 86 Micron Technology
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PC133 registered reference design

Abstract: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC66-, PC100-, and PC133-compliant · , (READ) latency MT48LC16M16A2TG-75 256Mb: x4, x8, x16 SDRAM 256MSDRAM_D.p65 ­ Rev. D; Pub. 6/01 , MICRON WITHOUT NOTICE. 256Mb: x4, x8, x16 SDRAM FBGA PIN ASSIGNMENT (Top View) 64 Meg x 4 SDRAM 8mm , are identicle to the listing of the 54-pin TSOP table on page 8. 256Mb: x4, x8, x16 SDRAM 256MSDRAM , specifications without notice. ©2001, Micron Technology, Inc. 256Mb: x4, x8, x16 SDRAM 256 Mb SDRAM PART
Micron Technology
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MT48LC64M4A2FB-75 MT48LC64M4A2FB-7E MT48LC32M8A2FB-75 MT48LC32M8A2FB-7E

Elpida LPDDR2 Memory

Abstract: elpida lpddr2 ] Column addressing 1 4K Row addressing PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 2 Micron Technology , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 3 Micron , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 4 94 94 94 94 , ) . 90 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 5 Micron
Micron Technology
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Elpida LPDDR2 Memory elpida lpddr2 lpddr2 samsung* lpddr2 micron lpddr2 lpddr2 datasheet
Abstract: PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 1 Micron Technology, Inc , : www.micron.com/decoder. PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 2 Micron , . 87 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 3 Micron Technology , . 77 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 4 Micron Technology , . PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 5 78 80 82 83 84 Micron Technology
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09005aef8091e6d1

Abstract: PC133 registered reference design 20 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 1 Products and specifications , -ball FBGA 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q , . 85 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 4 Micron Technology, Inc , . 79 81 83 84 85 86 87 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 5 Micron
Micron Technology
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09005aef8091e6d1

Abstract: PC133 registered reference design 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 ­ 16 Meg x 4 x 4 banks MT48LC32M8A2 ­ , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 1 Products and specifications discussed herein are subject , or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 256Mb: x4 , 8K 8K A[12:0] 4 BA[1:0] 512 A[8:0] Table 3: 256Mb SDR Part Numbering Part Numbers MT48LC64M4A2TG , : www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 2 Micron Technology, Inc
Micron Technology
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54 ball vfbga

B908

Abstract: 75Z1 256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V64M4 ­ 16 Meg x 4 x 4 , : 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N, Core DDR: Rev. B 9/08 EN 1 Micron Technology , Micron without notice. 256Mb: x4, x8, x16 DDR SDRAM Features Table 1: Key Timing Parameters CL = , . PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N, Core DDR , specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 DDR
Micron Technology
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B908 75Z1 MT46V32M8 MT46V16M16 DDR400

DDR200

Abstract: DDR266B PRELIMINARY 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM MT46V64M4 ­ 16 Meg , @ CL = 2 ( -75Z and -8) and CL = 2.5 (-75) *CL = CAS (Read) Latency 256Mb: x4, x8, x16 DDR SDRAM , . PRELIMINARY 256Mb: x4, x8, x16 DDR SDRAM 256Mb DDR SDRAM PART NUMBERS (Note: xx= -75, -75Z, or -8) PART , SSTL_2. All full drive option outputs are SSTL_2, Class II compatible. The 256Mb DDR SDRAM is a , quadbank DRAM. The 256Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation
Micron Technology
Original
DDR266B DDR200 57256 66-PIN 16DDR
Abstract: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF ­ , CL = 3 5.0ns 5.4ns 1. CL = CAS (READ) latency PDF: 09005aef834c13d2 256mb , without notice. ©2008 Micron Technology, Inc. All rights reserved. 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Figure 1: 256Mb Mobile LPSDR Part Numbering MT Micron Technology Product Family , available at www.micron.com/decoder. PDF: 09005aef834c13d2 256mb_mobile_sdram_y36n.pdf - Rev. G 08/09 EN Micron Technology
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MT48H8M32LF
Abstract: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 â'" 16 Meg x 4 x 4 banks , 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 09/14 EN 1 tRCD (ns , specifications discussed herein are subject to change by Micron without notice. 256Mb: x4, x8, x16 SDRAM , 4 BA[1:0] 4 BA[1:0] 4 BA[1:0] 2K A[9:0], A11 1K A[9:0] 512 A[8:0] Table 3: 256Mb , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. W 09/14 EN 2 Micron Technology, Inc. reserves the right to change Micron Technology
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Abstract: ADVANCE 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM FEATURES · VDD = +2.5V , ) Latency 256Mb: x4, x8, x16 DDR SDRAM 256Mx4x8x16DDR_B.p65 ­ Rev. B; Pub. 7/00 1 Micron Technology , MICRON'S PRODUCTION DATA SHEET SPECIFICATIONS. ADVANCE 256Mb: x4, x8, x16 DDR SDRAM 256MB DDR , DESCRIPTION The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quadbank DRAM. The 256Mb DDR SDRAM uses a double data rate Micron Technology
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A10/AP

MT48LC16M16A2P

Abstract: MT48LC16M16A2 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 ­ 16 Meg x 4 x 4 banks MT48LC32M8A2 , 256Mb_sdr.pdf - Rev. N 1/10 EN CL = 2 CL = 3 1 Micron Technology, Inc. reserves the right to , . Products and specifications discussed herein are subject to change by Micron without notice. 256Mb: x4, x8, x16 SDRAM Features Table 3: 256Mb SDR Part Numbering Part Numbers Architecture Package , part marking decoder is available at www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf -
Micron Technology
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MT48LC16M16A2P MT48LC16M16A
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