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Part Manufacturer Description Datasheet BUY
TMS45160L-70DZ Texas Instruments IC 256K X 16 FAST PAGE DRAM, 70 ns, PDSO40, Dynamic RAM visit Texas Instruments
X28HC256PZ-15 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256SZ-12 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256JIZ-15 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256JZ-12T1 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256PIZ-12 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil

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256K

Catalog Datasheet MFG & Type PDF Document Tags

HM5117400AS7GS

Abstract: HM5117400AS7 . CIRCUIT CAS CONT. CIRCUIT WE CONT. CIRCUIT OE CONT. CIRCUIT 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY SENSE AMP. & I/O BUS SENSE AMP. & I/O BUS 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY SENSE AMP. & I/O BUS SENSE AMP. & I/O BUS 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY SENSE AMP. & I/O BUS SENSE AMP. & I/O BUS 256K MEMORY CELL ARRAY 256K
Hitachi Semiconductor
Original
HM5117400AS7GS HM5117400AS7 A0-A10
Abstract: . CIRCUIT CAS CONT. CIRCUIT WE CONT. CIRCUIT OE CONT. CIRCUIT 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY SENSE AMP. & I/O BUS SENSE AMP. & I/O BUS 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY SENSE AMP. & I/O BUS SENSE AMP. & I/O BUS 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY 256K MEMORY CELL ARRAY SENSE AMP. & I/O BUS SENSE AMP. & I/O BUS 256K MEMORY CELL ARRAY 256K -
Original

TMSC512

Abstract: NM27C64 ,250NS,IND PDIP 28 27C128-25I/P Am27C256-90LC OTP 256K EPROM,90NS PLCC 32 27C256-90/L Am27C256-90JC OTP 256K EPROM,90NS PDIP 28 27C256-90/P Am27C256-90PC OTP 256K EPROM,90NS SOIC 28 27C256-90/SO Am27C256-100JC OTP 256K EPROM,100NS PLCC 32 27C256-10/L Am27C256-100PC OTP 256K EPROM,100NS PDIP 28 27C256-10/P Am27C256-120JC OTP 256K EPROM,120NS PLCC 32 , Microchip Part Number Am27C256-120PC OTP 256K EPROM,120NS PDIP 28 27C256-12/P Am27C256
Microchip Technology
Original
TMSC512 NM27C64 d8763-1 eprom 27c256-20 TEXAS INSTRUMENTS AT27C256R-20PI EPROM AMD DS11178D- TC57256A

HM5118160AJ-6

Abstract: HM5116160AJ-6 Control Circuit WE Control Circuit OE Control Circuit 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array Row decoder & driver 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I
-
Original
HM5116160AJ-6 HM5116160AJ-7 HM5116160AJ-8 HM5118160AJ-6 HM5116160ATT-7 HM5116160ALJ-6 HM5116160A HM5118160A ADE-203-208C W/495 W/440 W/825

synchronous sram

Abstract: 4Kx1 DRAM 98 104 , . 42 44 44 , .304 275 1Mx1 . 137 , 136
-
OCR Scan
synchronous sram 4Kx1 DRAM SRAM 6T DRAM 64kx16 SRAM EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C

KM62256BLG-7

Abstract: K6R4016V1C-FI12 ) IS62LV12816LL-70TI, CY62137VLL-70ZI IS62LV12816BLL-70TI 2Mb (128K x 16) 3.3v Async. 2Mb (256K x 8) 3.3v Async , -85MI 4Mb (256K x 16) ~1.8v Async. CY62146VLL-70BAI IS62LV25616LL-70MI 4Mb (256K x 16) 3.3v Async. CY62146VLL-70ZI IS62LV25616LL-70TI 4Mb (256K x 16) 3.3v Async. CY62147BVLL-70BAI IS62LV25616LL-70MI 4Mb (256K x 16) 3.0v Async. CY62147V18-85BAI IS62VV25616L-85MI 4Mb (256K x 16) ~1.8v Async. CY62147VLL-70BAI IS62LV25616LL-70MI 4Mb (256K x 16) 3.0v Async. CY62147VLL-70ZI IS62LV25616LL-70TI 4Mb (256K x 16) 3.0v Async
Integrated Silicon Solution
Original
KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 IS62C1024L-70QI C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ C7C1334-7AC
Abstract: Buffer Din Buffer sense amp. & l/V ous~ «lim. W l/u OCI3L. 256k _ memory _ _ ll array cell - _ sense amo. & i/u 256k memory cell array sense amp. & i/u pus 256k memory cell array sense amp. & l/û T u s 256k memory ceii array sense amo. & i/C bus 256k memory cell array sense amo. & i/u pus1 256k memory celt array "Sense amp. & i/u pus' 256k memory cell array ISënsë amp. & i/u pus' 256k memory cell array : sense amp. & i/u pus' 256k memory cell array "Sense amp, & v u -
OCR Scan
HM5116100B ADE-203-371A W/385 W/358 HM5116100BS-6 HM5116100BS-7
Abstract: Dout D out CÄS WE Din Buffer Sen« ¿mo. i i m w 256k memory ceti array senee arap^T iflJ bt» 256k memory ceti array sense amp. a ifo mis t r iw n n m i i w r won ii« 256k memory ceti h array sense amo, a vu pus 256k memory celt array sense amo. & IAJ bus' 256k memory erti array amp. & yu~5ta 256k memory ceti array - " l amp, a vu pus 256k memory ceB array a ^ ow 256k memory cefi array sense amp, a vu pus 256k memory c«8 array sense amp. a ir ti Dia ~ 256k memory cefi array Sèhse S rtta V VO bòs 256k -
OCR Scan
HM5116100BS-8 CP-26/24DB HM5116100BS HM511610

E34C

Abstract: /ARRAYS/MEM Block Diagram RAS RAS Control Circuit 256k memory cell array Sense amo. & 1/6 bus 256k memory cell array 256k memory cell array Sense amo. & I/O bus 256k memory cell array 256k memory cell array Sense amo. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense am D . & I/O bus 256k memory cell array 256k memory cell array Sense amo. & I/O bus 256k memory cell array 256k memory cell array Sense amo. & I/O bus 256k
-
OCR Scan
E34C HM5116102 HM5116102J-8 CP-24DA TTP-24D HM5116102TT-8 HM5116102RR-8

HM5116100AS7

Abstract: HM5116100AS6 Control Circuit WE Control Circuit 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O
Hitachi Semiconductor
Original
HM5116100A HM5116100AS-6 HM5116100AS HM5116100AS7 HM5116100AS6 Hitachi DSA00514 ADE-203-178B HM5116100AS-7 HM5116100AS-8 HM5116100ATS-6

HM5116400ATS

Abstract: Control Circuit 256k memory cell array Sense amp. A I/O bus 256k memory cell array 256k memory cell array Sense amp. A I/O bus 256k memory cell array 256k memory cell array Sense amp. A I/O bus 256k memory cell array 256k memory cell array Sense amp. A I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array _ Sense amp. A I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 1/04 buffer H
-
OCR Scan
HM5116400ATS ADE-203-179D HM5116400A/AL 5116400A7AL HM5116400AS/ALS-6 HM5116400AS/ALS-7 HM5116400AS/ALS-8
Abstract: Control Circuit 256k memory cell array Sense amo. & I/O bus 256k memory cell array 256k memory ceil array Sense amD. & I/O bus 256k memory cell array T RAS Control Circuit 256k memory cell array Sense amo. & I/O bus 256k memory cell array 256k memory ceil array Sense amD. & I/O bus 256k memory cell array 256k memory cell array Sense amo. & I/O bus 256k memory ceil array 256k memory cell array Sense amD. & I/O bus 256k memory celt array 256k memory ceil array Sense amD. & I/O bus 256k memory cell array -
OCR Scan
023MSS HM5116101 216-W HM5I1610I HM5116101J-8 HM5116101TT-8
Abstract: 256k memory call array Sense amp. ft I/O but 256k memory cell array 256k memory cell array Sense amp. ft I/O buT~ 256k memory cel array 2S6k memory c e l array Sente amp. & I/O bm 256k memory cell array 256k memory cell array Sente amp. ft I/O b u t~ 256k memory cell array 256k memory cell array Sente amp. A I/O but 256k memory cell array 256k memory ceH array Sente amp. & I/O b t it ~ 256k memory c e l array 256k memory c e l array Senee amp. ft I/O but 256k memory ce l array 256k memory cell array -
OCR Scan
ADE-203-171A HM51W17400AS/ALS-6 HM51W17400AS/ALS-7 HM51W17400AS/ALS-8 TTP-26/24DA W/360
Abstract: Buffer sense amp.TTTCrEus 256k memory celt array sense amoTTT TÆ TEus 256k memory cell array sense amp, a i/u~bus 256k memory cell array S e tte èrtp. % VO bus 256k memory cell array aanat amp. 41/CT5us 256k memory cell array sense amp, a i/u bus 256k memory celt array 256k memory cell array sense amp. & i/u E g 256k memory call array sense amp. & i/u '^ u s 256k memory call array sanse amo & i/u 256k memory cell array sense amp. & i/u ' 256k memory cell array sense > jp im n arm. iitp . a a i/u u w pus -
OCR Scan
ADE-203-371 HM5116100BTS-7 HM5116100BTS-8

HM5117800BLTT6

Abstract:   1/06 1/06 buffer 1/03 1/03 buffer 1/02 1/02 buffer Sense amo. A I/O bu» 256k maroory call array Sanaa amo. A t/0 bm 256k memory call array Sansa amp. & I/O bua 256k mamory caH array Sanaa amp. & I/O bua 256k mamory caH array Sanaa amp. A I/O bua ¿56k memory cal array Saw amo. & I/O bua 256k mamory cal array Sanaa amp. A i/o bua 256k mamory call array Sanaa amp, A I/O bua _ 256k mamory call array Sanaa amp. & I/O bua 256k mamoiy ce» array Sanaa amo. A I/O bua 256k mamoiy ceti array Sanaa amp. A I/O
-
OCR Scan
HM5117800BLTT6 HM5117800B ADE-203-262A W/605 W/550 Q0275Q1 HM5117800BJ-6
Abstract: ALLIANCE MEMORY AS6C4016A LOW POWER, 256K x 16 SRAM Document Title 256K x 16 bit Super Low , AS6C4016A LOW POWER, 256K x 16 SRAM FEATURES GENERAL DESCRIPTION â'¢ â'¢ â'¢ â'¢ â'¢ â , retention current. Process Technology : 0.18µm Full CMOS Organization : 256K x 16 bit Power Supply , KGD VFBGA-48 44-TSOP2 Page 2 of 14 ALLIANCE MEMORY AS6C4016A LOW POWER, 256K x 16 SRAM Alliance Memory Inc. Page 3 of 14 ALLIANCE MEMORY AS6C4016A LOW POWER, 256K x 16 SRAM Alliance Alliance Memory
Original
AS6C4016A-55ZIN AS6C4016A-55BIN AS6C4016A-45ZIN AS6C4016A-45BIN

AS8C801825

Abstract: AS8C803625 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect AS8C803625 AS8C801825 Features 256K x 36, 512K x 18 memory configuration , /801825 are high-speed SRAMs organized as 256K x 36/512K x 18. The 803625/801825 SRAMs contain write, data , . BW3 and BW4 are not applicable for 803625/801825. NOVEMBER 2010 AS8C803625, AS8C801825, 256K x , AS8C803625, AS8C801825, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with 3.3V I/O, Flow-Through Outputs
Alliance Memory
Original
256K x 8 SRAM dip 117MH

EPROM AMD

Abstract: VSOP 28 -10 OTP 256K EPROM,100NS PDIP 28 27C256-10/P HN27C256FP-10T* OTP 256K EPROM,100NS SOIC 28 27C256-10/SO HN27C256FP-25T/-30T* OTP 256K EPROM,200NS SOIC 28 27C256-20/SO HN27512G-25/-30 , -250PI OTP 128K EPROM,250NS,IND PDIP 28 27C128-25I/P Am27C256-90LC OTP 256K EPROM,90NS PLCC 32 27C256-90/L Am27C256-90JC OTP 256K EPROM,90NS PDIP 28 27C256-90/P Am27C256-90PC OTP 256K EPROM,90NS SOIC 28 27C256-90/SO Am27C256-100JC OTP 256K EPROM,100NS PLCC 32 27C256-10
Microchip Technology
Original
VSOP 28 TC54256AF NM27C256N120 27c256-15 TEXAS INSTRUMENTS NM27C256N150 28/H5GQ1H24MJR-T0C HN27C256A DS11178C- AT27C512R-90 27C512A
Abstract: 2 HM5116100 Series HITACHI/ LOGIC/ARRAYS/MEM 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amo. & I/O bus 256k memory cell array -* 256k memory cell array Sense amo. & I/O bus 256k memory cell array Sense amD. & I/O bus 256k memory cell array - 256k memory cell array Sense amo. & I/O bus 256k memory cell array * 256k memory cell array Sense amD. & I/O bus 256k memory cell array * 256k memory cell array -
OCR Scan
HM5116100J-6 HM5116100J-7 HM5116100J-8 HM5116100Z-6 HM51161002-7 HM5116100Z-8
Abstract: Control Circuit 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory celt array Sense amp. A I/O bus 256k memory celt array 256k memory celt array Sense amp. A I/O bus 256k memory celt array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory ceil array Sense amp. A I/O bus 256k memory ceil array Row decoder & 256k memory cell array Sense amp. A I/O bus_ 256k memory ceil array 256k memory cell array Sense amp. A I/O bus 256k memory cell array -
OCR Scan
ADE-203-372 HM51W16165A/AL HM51W16165AJ-6 HM51W16165AJ-7 HM51W16165AJ-8 HM51W16165AU-6

HM5116400ATS

Abstract: Hitachi DSA0066 Circuit 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array
Hitachi Semiconductor
Original
Hitachi DSA0066 179d HM5116400ATS/ALTS-6 HM5116400ATS/ALTS-7 HM5116400ATS/ALTS-8 HM5116400AS/ALS HM5116400ATS/ALTS HM5116400B/BL

ALRS8

Abstract: HM51W16400A/AL Series Block Diagram 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory celi array Sense amp, & I/O bus 256k memory cell array 256k memory cell array Sense amp. & I/O bus 256k memory cell array 256k memory ceil array Sense amp. & I/O bus 256k memory cell array 256k memory celi array Sense amp. & I/O bus 256k memory cell array 256k memory cell array Sense amp. A I/O bus 256k memory cell array
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OCR Scan
ALRS8 304-W CP-24DB TTP-24DA HM51W16400AS/ALS-6 HM51W16400AS/ALS-7 HM51W16400AS/ALS-8
Abstract: /U bus 256k memory cell array s en se am p. & 256k memory cel) array i/u pus 256k memory cell array sense amST* 256k memory cell artav sense amp: & I/O buT 256k memory cell array Séteé ârtip. & I/U bus 256k memory cell array sense am oT* I/U bus 256k memory cell array sense amp, a l/U bus 256k memory ceti array sense amp. & I/O* PUT 256k memory cell array sense amp. â  256k memory cell array sense amp, a i/o pus ' 256k memory_ ceil array sense amp. & I/o bus 256k -
OCR Scan
HM51W17400B ADE-203-370A W/324 HM51W17400BS-6 HM51W17400BS-7 HM51W17400BS-8
Abstract: circuit OE control circuit T Sense amo & I/O 256k memory cell Sense amp 5 I/O 256k memory cell Sense amp S I/O bus array bus array bus ÌL Q Sense amo & I/O bus 256k memory cell array Sense amp 8 I/O bus 256k memory cell array Sense amp 8 I/O bus 256k memory cell array Sense amo S I/O bus 256k memory cell array Sense amp 8 I/O bus 256k memory cell array Sense amp & I/O bus 256k memory cell array Sense amp 8 I/O bus 256k memory cell array 256k memory cell array Sense amo & I/O bus 256k -
OCR Scan
HM51W17800B ADE-203-275C W/396 HM51W17800BJ-6 HM51W17800BJ-7 HM51W17800BJ-8

Hitachi DSA00514

Abstract: Series Block Diagram WE control circuit OE control circuit Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k memory cell array Sense amp. & I/O bus 256k
Hitachi Semiconductor
Original
ADE-203- HM51W17800B/BL HM51W17800BJ/BLJ-6 HM51W17800BJ/BLJ-7 HM51W17800BJ/BLJ-8 HM51W17800BTT/BLTT-6

Hitachi DSA0015

Abstract: HM5116400BLS-6 A0 to A11 4 Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & I/O cell I/O cell I/O cell I/O
Hitachi Semiconductor
Original
HM5116400BS-6 HM5116400BS-7 HM5116400BS-8 HM5116400BLS-6 HM5116400BLS-7 HM5116400BLS-8 Hitachi DSA0015 HM5116400B ADE-203-367A

Hitachi DSA00164

Abstract: Circuit 3 Row decoder & driver Selector Address A0 to A11 Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp. & 256k memory Sense amp
Hitachi Semiconductor
Original
Hitachi DSA00164
Abstract: 2003 HM51W17400B Sériés Block Diagram Column decoder & driver 256k memory sanse amoTg cell array W Sw 256k memory cell array sanse amoTTI 256k memory sense amoTT 256k memory cell array IVO bus sense amo: cell array I/U bus 256k memory cell array sense amo, a i/u pus 256k memory cell array sansa amo, a i/u pus 256k memory cell array sense amo, a t/u puT 256k memory cell array sense amp. & i/u pus 256k memory sense amcTa cell array I/U bus 256k memory cell array Sense amp. & uO bU& 256k memory cell array -
OCR Scan
HM51W17400BLS-6 HM51W17400BLS-7 HM51W17400BLS-8 HM51W17400BTS-6 HM51W17400BTS-7 HM51W17400BTS-8
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