NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 34.0 40 0.1 430 - JMV0805S120T251 JMV0805S120T251 12.0 14.0~18.3 34.0 40 0.1 250 - , MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: (SMD Surge Protection) ü INTRODUCTION , size and SMD compatibility Excellent clamping performance High transient current capability Fastest response time Low voltage available APPLICATIONS · · · · IC and transistor protection Computer , VARISTOR RoHS JMV S & E Series: (SMD Surge Protection) ü TAPE SPECIFICATIONS Dimensions mm Size A + ... | Original |
6 pages, |
JMV0402S140T850 JMV0402E270T300 JMV0402E520T030 JMV0402S090T201 JMV0402E200T220 JMV0402S180T550 JMV0402S5R6T301 JMV0603S5R6T102 JMV0805S140T201 JMV1206S560T381 250 B 340 smd Transistor 200 Amp current 1000 volt diode JMV0402E270T150 datasheet abstract |
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| Abstract: P-SOT223-4-1 P-SOT223-4-1 (SMD) (Plastic Small Outline Transistor) 1.6 ±0.1 6.5 ±0.2 0.1 max +0.2 acc. to DIN , Transistor Single Outline) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 0.9 +0.08 -0.04 B 5.4 ±0.1 0.51 , P-SOT223-4-1 P-SOT223-4-1 SMD = Surface Mounted Device w New type P-TO252-3-1 P-TO252-3-1 (D-PAK) Functional Description The TLE , transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of , Current consumption; Iq = II IQ Iq 8 15 mA IQ = 250 mA 20 30 mA Drop ... | Original |
11 pages, |
AES0284 A928 Q67006-A9359 Q67006-A9348 a935 AEB02283 AEP02282 AES02285 AEP02561 TO252 rthjc P-TO252-3-1 cq 622 4274 V33 smd transistor code 622 Q67006-A9348 abstract |
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| Abstract: BLA0912-250 Avionics LDMOS transistor Rev. 02 - 22 July 2004 Product data sheet 1. Product , 0.1 25 6 0.15 ±5 tp = 340 us; = 1 % 36 250 13.5 0.8 50 0.2 25 6 , 25 6 0.45 ±5 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 2. , BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 6. Characteristics Table 6 , BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 7.1 Ruggedness in class-AB operation ... | Original |
12 pages, |
TANTALUM SMD CAPACITOR T491D476M020AS T491D226M020AS BLA0912-250 BLA0912-250 abstract |
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| Abstract: SOT23 Plastic SMD 2.9 x 1.3 x 1.0 250 BAS56 BAS56 B K E R SOT143B Plastic SMD 2.9 x 1.3 x 1.0 , /BISS TRANSISTOR MODULES 300 mW 100 30 110 800 n.a. n.a. BCV61/A/B/C NPN , SMD SOT416 (SC-75 SC-75) Plastic SMD 3.04 x 1.6 x 0.55 500 2.9 x 1.5 x 1.15 250 2.9 x 1.3 x , 2.9 x 1.5 x 1.15 220 250 SOD110 Ceramic SMD SOT323 (SC-70 SC-70) Plastic SMD SOD323 , lead SMD SOD882 Leadless 1.6 x 1.2 x 0.6 1.0 x 0.8 x 0.5 300 300 350 250 ... | Original |
24 pages, |
PBSS4240T BC547 smd package PEMH15 BC557 smd sot23 BF450 BZB984 Transistor SMD SOT363 SC70 SC88 PESD24VS5UD pin diode do35 MSE-200 2N5551 SOT23 TRANSISTOR SMD CODE PACKAGE SOT363 2n5551 smd datasheet abstract |
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| Abstract: 2 5 6 9,9-0,5 2,5 DIP-4 SMD DIP-6 SMD 1,5 max 0,34-0,1 4,5 max 7,62±0,25 , Diode Output 176 130 167 3120 1 2 C Input Response Transistor Output - , 2938 AC Switch 6 3 Transistor Output 2497-01 2498 532 166 178 -4- - , OPTOCOUPLERS AND SSR P R N 249, 293, 4499 DIP4, 6, 8 SMD. : 2936 DIP-, 2936 SMD-. , , DIP4, 6, 8 9 SMD. : 128 DIP-, 1289 SMD-. Equivalent Circuit Type ... | Original |
20 pages, |
AQY210 HCPL135 darlington optocoupler cross reference QT Technologies CNY 17-3 HP optocoupler 4100 opto-coupler darlington optocoupler crossreference motorola til111 CNY 42 optocoupler SFH610-1 ix 2933 PC814 smd datasheet abstract |
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| Abstract: TLE 4274 Package Outlines P-SOT223-4-1 P-SOT223-4-1 (SMD) (Plastic Small Outline Transistor) 1.6 ±0.1 , P-SOT223-4-1 P-SOT223-4-1 SMD = Surface Mounted Device w New type P-TO252-3-1 P-TO252-3-1 Functional Description The TLE 4274 is , of the series transistor via a buffer. Saturation control as a function of the load current prevents , ; Iq = II IQ Iq 8 15 mA IQ = 250 mA 20 30 mA Drop voltage1 , Junction Temperature Tj (V33-Version) AED02288 AED02288 3.50 VQ AED02806 AED02806 2.7 V VQ 3.40 V ... | Original |
13 pages, |
Q67006-A9348 Q67006-A9289 AES02285 AES02284 AEP02561 AEP02282 AEB02283 P-TO252-3-1 Q67006-A9348 abstract |
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| Abstract: : Dependent on characteristics of external transistor. 50 250 5 4.65 4.50 150 3.25 2.80 200 10 4.90 4.70 200 3.50 3.00 400 15 VOUT-0.10 VOUT-0.15 250 3.75 3.40 800 0.4 10 uA V V , transistor minimum b @ maximum output current. Typical start-up current and current limit can be calculated , input voltage is 6V, maximum output current is 1Amp, and minimum transistor b @ 1Amp is 60, then ROUT , + 5mA = 18.3mA With VIN = 14V, and a pass transistor b of 40 @ current limit: 14V Ð 1V x 40 = ... | Original |
6 pages, |
TIP42B TIP42 MS-001 CS8127 D03V power IC CS8127 abstract |
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| Abstract: VOUT-0.10 VOUT-0.15 250 3.75 3.40 uA V V mV V V 200 400 800 0.4 10 mV V uA , of the CS-8128 CS-8128 and the pass device. *bQ1 = Pass transistor minimum b @ maximum output current. , current is 1Amp, and minimum transistor b @ 1Amp is 60, then ROUT can be calculated as follows: Output , transistor b of 40 @ current limit: 14V Ð 1V ILimit ... x 40 = 1.7Amps 300½ BIAS Resistor - This , TIP42 TIP42 PNP transistor typically provides a 100mV dropout voltage at 500mA, increasing to 350mV at 3A. ... | Original |
6 pages, |
TIP42B TIP42 CS-8128N8 CS-8128D8 CS-8128 CS-8128 abstract |
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| Abstract: BLA0912-250 Avionics LDMOS transistor Rev. 3 - 26 November 2010 Product data sheet 1. , BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 2. Pinning information Table 2. Pinning , of 13 BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 40 C1 C2 C3 , capacitor 22 F; 63 V R1 SMD resistor 51 R2 resistor 49.9 [1] BLA0912-250 , reserved. 6 of 13 BLA0912-250 NXP Semiconductors Avionics LDMOS transistor 8. Test ... | Original |
13 pages, |
T491D476M020AS smd JH transistor BLA0912-250 250 B 340 smd Transistor BLA0912-250 abstract |
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| Abstract: specification PNP transistor/Schottky diode module MHC092 MHC092 300 fT (MHz) 250 PMEM4010PD PMEM4010PD MHC311 MHC311 , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 M3D302 PMEM4010PD PMEM4010PD PNP transistor , specification PNP transistor/Schottky diode module PMEM4010PD PMEM4010PD PINNING FEATURES · 600 mW total power , 2 not connected · Reduced pick and place costs 3 cathode · Small plastic SMD package. 4 anode 5 base 6 collector Transistor: · Low collector-emitter saturation ... | Original |
12 pages, |
TRANSISTOR SMD MARKING CODE MV DIODE TRANSISTOR SMD MARKING CODE A1 transistor SMD 104 PNP TRANSISTOR SOT457 PMEM4010PD TRANSISTOR SMD MARKING CODE M3D302 M3D302 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| BSP250 - P-channel enhancement mode vertical D-MOS transistor BUK754R3-40B - TrenchMOS (tm) standard level FET BUK764R3-40B - TrenchMOS (tm) standard level FET Product listing for PowerMOS transistors Products listing field-effect transistor www.datasheetarchive.com/files/philips/catalog/listing/30689-v2.html |
Philips | 01/06/2005 | 260.24 Kb | HTML | 30689-v2.html |
| 40n 275p 340p 1M 25.0 0.0 90p 120p 1M 25.0 0 20 SO 8 8 SIPMOS SMALL-SIGNAL TRANSISTOR; Dual N TO-92 3.0 B152-B6294-X-X-7400 SIPMOS SMALL-SIGNAL TRANSISTOR; N CHANNEL; ENHANCEMENT MODE; LOGIC 620p 775p 1M 25 0 270p 340p 1M 25 0 20 SO 8 8 SIPMOS SMALL-SIGNAL TRANSISTOR; SINGLE N .04.00ps 36767.0 BSO612CV BSO612CV BSO612CV BSO612CV SMD 25.0 2 T_amb 25 150 150.0 ENH N/P 3/-2 1u/-1u 60/-60 10n/-10n 100n/-100n T bso612cv 22.09.99ps 36763.0 BSO613SPV BSO613SPV BSO613SPV BSO613SPV SMD 25.0 2,5 T_amb 25 150 150.0 ENH P -3,44 -1u -60 -10n -100n T www.datasheetarchive.com/download/19281888-169556ZC/transsip.zip (transsip.xls) |
Infineon | 07/09/2000 | 92.95 Kb | ZIP | transsip.zip |
| Case-C 6.0 5.0 D1,D2,D3,D5,D7 LED, RED, SMD PANASONIC, LN1251C- LN1251C- LN1251C- LN1251C-(TR) 7.0 1.0 D6 DIODE, FAST SWITCHING, SOD-323 DIODE INC., 1N4148WS-7 1N4148WS-7 1N4148WS-7 1N4148WS-7 8.0 1.0 D4 LED, GREEN, SMD PANASONIC, LN1351C- LN1351C- LN1351C- LN1351C-(TR) 9.0 14.0 E ., COMPACT\PCI\MALE AMP 352332-1 15.0 2.0 Q2,Q1 N-MOSFET, IRF7413 IRF7413 IRF7413 IRF7413 IR., IRF7413 IRF7413 IRF7413 IRF7413 16.0 1.0 Q3 Transistor, MMBT -24R9FM -24R9FM -24R9FM -24R9FM 24.0 4.0 R16,R10,R35,R36 RES., CHIP, 10K, 1/16W 1/16W 1/16W 1/16W, 5% 0402 AAC, CR05-103JM CR05-103JM CR05-103JM CR05-103JM 25.0 1.0 R11 RES -1R8JM 33.0 1.0 U1 lot #254882.1 DC=0146 I.C. LTC1644CGN LTC1644CGN LTC1644CGN LTC1644CGN SSOP-20GN SSOP-20GN SSOP-20GN SSOP-20GN LINEAR, LTC1644CGN LTC1644CGN LTC1644CGN LTC1644CGN 34.0 2 www.datasheetarchive.com/download/29690868-365155ZC/461a-a_b.zip (461A.xls) |
Linear | 15/06/2006 | 1230.31 Kb | ZIP | 461a-a_b.zip |
| ; V FB = 1V 250 300 m A I o sink Sink output current Vcomp = 1.9V; V FB = 1.5V 1 1.5 mA I b 3.3V ( + 2%) REFERENCE VOLT - AGE OUTPUT VOLTAGE ADJUSTABLE FROM 0 TO 35V 250KHz INTERNALLY . Realised in BCD mixed technology, the device uses an internal P-Chanel D-MOS transistor (with a typical Rdson of only 250m W ) to obtain high ef - ficiency beside an excellent overall electrical per - formances. An internal oscillator fixes the switching frequency at 250KHz (no external component is needed www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7324.htm |
STMicroelectronics | 20/10/2000 | 11.02 Kb | HTM | 7324.htm |
| .0 1.0 Q1 N-CH MOSFET, 600V, 9A, DPAK/D-2-PAK FAIRCHILD, FCD9N60NTM FCD9N60NTM FCD9N60NTM FCD9N60NTM 25.0 1.0 Q2 Power Transistor, SPN03 SPN03 SPN03 SPN03 : 1.0 2.0 CAC1,CAC2 CAP., 0.1uF, 250V/275VAC ECQUL, 20% PANASONIC, ECQU2A104ML ECQU2A104ML ECQU2A104ML ECQU2A104ML 2.0 2.0 C1,CAC4 CAP .2V, SMA(SMB,SMC) Central Semi., CMZ5923B 15.0 1.0 D1 Supper Barrier Rec., 20A, 200V, D-2-Pak DIODES., SBR20A200CTB SBR20A200CTB SBR20A200CTB SBR20A200CTB 16.0 1.0 D2 Ultrafast Avalanche SMD Rec., BYG20J BYG20J BYG20J BYG20J, SMA VISHAY, BYG20J BYG20J BYG20J BYG20J 17.0 1.0 D5 Schottky ., BAV70W-7-F BAV70W-7-F BAV70W-7-F BAV70W-7-F 19.0 4.0 D7,D8,D9,D10 Rec. Diode, 1N4004 1N4004 1N4004 1N4004, DO-41 DO-41 DO-41 DO-41 DIODES, 1N4004-T 1N4004-T 1N4004-T 1N4004-T 20.0 1.0 F1 FUSE, 250V, 3 www.datasheetarchive.com/download/67939019-364996ZC/1745a.zip (1745acf.xls) |
Linear | 02/03/2011 | 798.11 Kb | ZIP | 1745a.zip |
| Transistor Array Die Full production LM3046 LM3046 LM3046 LM3046 MWC Transistor Array Wafer Full production LM3046M LM3046M LM3046M LM3046M Transistor Array SOIC NARROW 14 Full production 1K+ $0.4150 LM3046MX LM3046MX LM3046MX LM3046MX Transistor Array SOIC NARROW 14 Full production 1K+ $0.4150 LM308H LM308H LM308H LM308H Full production LM317LIBP LM317LIBP LM317LIBP LM317LIBP 3-Terminal Adjustable Regulator microSMD 6 Full Regulator [Life-time buy] TO-5 10 Lifetime buy 250+ $5.6900 LM329AH LM329AH LM329AH LM329AH Precision www.datasheetarchive.com/files/national/htm/nsc03761.htm |
National | 16/08/2002 | 379.08 Kb | HTM | nsc03761.htm |
| Transistor Array Unpackaged Die Full production LM3046 LM3046 LM3046 LM3046 MWC Transistor Array Wafer Full production LM3046M LM3046M LM3046M LM3046M Transistor Array SOIC NARROW 14 Full production 1K+ $0.4150 LM3046MX LM3046MX LM3046MX LM3046MX Transistor Array SOIC NARROW 14 Full production 1K LM317LIBP LM317LIBP LM317LIBP LM317LIBP 3-Terminal Adjustable Regulator microSMD 6 Full production 1K+ $0 Wafer Full production LM336B-2.5 MDC Voltage Reference Diode Unpackaged Die www.datasheetarchive.com/files/national/htm/nsc02673-v5.htm |
National | 01/11/2002 | 414.7 Kb | HTM | nsc02673-v5.htm |
| BSP250 - P-channel enhancement mode vertical D-MOS transistor BUJ100B - Silicon Diffused Power Transistor BUJ303B - Silicon Diffused Power Transistor 2N7000 2N7000 2N7000 2N7000 - N-channel enhancement mode field-effect transistor BS108 BS108 BS108 BS108 - N-channel enhancement mode vertical D-MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/48005.html |
Philips | 01/06/2005 | 515.49 Kb | HTML | 48005.html |
| .0 BIP 22.0 600.0 600.0 2.1 2.7 10 25.0 50p 75p 1M 25 1.25 8g -55.0 150.0 -55.0 150.0 DEV 250n 340n 45n 340n 45n 70n 500n 680n 60n 90n 750n 1020n 105n 160n 160u T_j 25.0 600.0 50.0 TO-220 AB IGBT WITH 0.63 8g -55.0 150.0 -55.0 150.0 DEV 250n 340n 50n 75n 500n 700n 80n 120n 750n 1040n 100n 150n 150u T .0 BIP 42.0 600.0 600.0 2.1 2.7 30.0 25.0 100p 150p 1M 25 0.63 8g -55.0 150.0 -55.0 150.0 DEV 250n 340n 14m 3 03.00ds sgp06n60 22.08.00 SGB06N60 SGB06N60 SGB06N60 SGB06N60 Q67041-A4709-A4 Q67041-A4709-A4 Q67041-A4709-A4 Q67041-A4709-A4 SMD 25.0 68 T_case 25.0 150.0 BIP 6 600 www.datasheetarchive.com/download/92011529-169531ZC/igbtsip.zip (igbtsip.xls) |
Infineon | 07/09/2000 | 58.47 Kb | ZIP | igbtsip.zip |
| .0 Q31 TRANSISTOR, PNP, SOT-23 DIODES., MMBT2907A-7-F MMBT2907A-7-F MMBT2907A-7-F MMBT2907A-7-F 34.0 1.0 Q32 TRANSISTOR, NPN, SOT-23 ZETEX DC888A-B Print_Area Print_Titles &L&"Arial,Bold"&16Linear Technology Corporation &"Arial,Bold Italic"&8LTC3725EMSE 8LTC3725EMSE 8LTC3725EMSE 8LTC3725EMSE, LTC3706EGN LTC3706EGN LTC3706EGN LTC3706EGN&R&"Arial,Bold Italic"&12Bill of Material Demo Bd. #888A-B &"Arial A 5.0 1.0 C30 CAP., X7R, 2.2nF, 250V, 10%, 1812 Murata, GA343QR7GD222KW01L GA343QR7GD222KW01L GA343QR7GD222KW01L GA343QR7GD222KW01L 6.0 3.0 C31,C33,C68 Neo .0 1.0 L1 INDUCTOR, 100uH, DO1606T DO1606T DO1606T DO1606T Coilcraft, DO1606T-104MLC DO1606T-104MLC DO1606T-104MLC DO1606T-104MLC 25.0 1.0 L6 INDUCTOR, PLANAR, 0.65u www.datasheetarchive.com/download/5890549-365334ZC/888a-a.zip (DC888A-BCF.xls) |
Linear | 22/09/2009 | 1675.32 Kb | ZIP | 888a-a.zip |