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LTM4625IY#PBF Linear Technology LTM4625 - 20VIN, 5A Step-Down DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 25; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTM4625IY Linear Technology LTM4625 - 20VIN, 5A Step-Down DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 25; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTM4625EY#PBF Linear Technology LTM4625 - 20VIN, 5A Step-Down DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 25; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTM4624EY#PBF Linear Technology LTM4624 - 14VIN, 4A Step-Down DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 25; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTM4624IY Linear Technology LTM4624 - 14VIN, 4A Step-Down DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 25; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTM4624IY#PBF Linear Technology LTM4624 - 14VIN, 4A Step-Down DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 25; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices

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25-C Datasheet

Part Manufacturer Description PDF Type
25C01 Catalyst Semiconductor 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM Original
25C02 Catalyst Semiconductor 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM Original
25C04 Catalyst Semiconductor 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM Original
25C040 Microchip Technology 4K SPI Bus Serial EEPROM Original
25C040 Microchip Technology 4K 5.0V CMOS Serial EEPROM Product Brief Original
25C040E/P Microchip Technology 4K SPI Bus Serial EEPROM Original
25C040-E/P Microchip Technology 4K SPI bus EEPROM Original
25C040-E/P Microchip Technology 4k SPI Bus Serial EEPROM Original
25C040-E/P Microchip Technology 4K SPIBus Serial EEPROM Original
25C040-E/PG Microchip Technology IC EEPROM SRL-SPI 4KBIT 512X8 5V 8 pin PDIP Original
25C040E/SN Microchip Technology 4K SPI Bus Serial EEPROM Original
25C040-E/SN Microchip Technology 4K SPI bus EEPROM Original
25C040-E/SN Microchip Technology 4K SPIBus Serial EEPROM Original
25C040-E/SN Microchip Technology 4k SPI Bus Serial EEPROM Original
25C040-E/SNG Microchip Technology IC EEPROM SRL-SPI 4KBIT 512X8 5V 8 pin SOIC N Original
25C040E/ST Microchip Technology 4K SPI Bus Serial EEPROM Original
25C040-E/ST Microchip Technology IC EEPROM SRL-SPI 4KBIT 512X8 5V 8TSSOP Original
25C040-E/ST Microchip Technology 4k SPI Bus Serial EEPROM Original
25C040-E/ST Microchip Technology 4K SPI bus EEPROM Original
25C040-E/STG Microchip Technology IC EEPROM SRL-SPI 4KBIT 512X8 5V 8TSSOP Original
Showing first 20 results.

25-C

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Temperature range 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C Software version N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A , /Thermal Electrical/Thermal Electrical/Thermal Electrical/Thermal Electrical/Thermal Temperature range 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C 25°C -25°C to 100°C 25°C 25°C -25°C to 100°C -25°C to 100°C -25°C to 100°C -25°C to 100°C -25°C to 100°C -25°C to 100°C -25°C to 100°C -25°C to 100 Fairchild Semiconductor
Original
transistor 2203 FJL6920 2N3390 PSpice 2N4126 bc548 transistor 2N5086 tip142 2N3390 2N3391A 2N3392 2N3393 2N3415 2N3416
Abstract: = Device Code = Date Code* = Pb-Free Package MAXIMUM RATINGS (TA = 25C unless otherwise noted , Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - , , SMUN5311DW1T1G, NSVMUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for , ELECTRICAL CHARACTERISTICS - MUN5311DW1T1G, SMUN5311DW1T1G NPN TRANSISTOR 1 IC/IB = 10 TA=-25C 25C 0.1 75C ON Semiconductor
Original
Ie 49 transistor SMUN5312DW1T1G mun5335dw1t1g SMUN5330DW1T1G NSVMUN5311DW1T1GS AEC-Q101 MUN5311DW1T1/D
Abstract: Reel Pb-Free Package is Available 6 1 SOT-363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C , CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction , Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for ON Semiconductor
Original
MUN5331DW1T1 MUN5311DW1T1 MUN5337DW1T1
Abstract: PD mW Topr -30 +85 °C Tstg -55 +150 °C *1 *1 T a = 25°C , : : : : I Ta = 25°C · AN78M05NSP (5 V ) Tj = 25°C , (10 ms ) , , VI = 10 V, IO = 350 mA, CI = 0.33 uF, CO = 0.1 uF VO1 Tj = 25°C 4.8 5 5.2 V VO2 VI = 7.5 V 20 V, IO = 5 mA 350 mA 4.75 Tj = 25°C 5.25 V 1 REGIN1 VI = 7.5 V 25 V, Tj = 25°C 3 100 mV 2 REGIN2 VI = 8 V 25 V, Tj = 25°C 1 50 -
Original
AN78M06NSP AN78M07NSP AN78M08NSP AN78M09NSP AN78M10NSP AN78M12NSP AN78M SFF00012BJB
Abstract: Reel Pb-Free Packages are Available 6 1 SOT-363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C , Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C , Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign , < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ON Semiconductor
Original
Abstract: 200 200 5 30 1 2. 5 25C 100 200 25C i^rsMn' (l'M'w) 483 MA649 tóT 200 200 5 25c 30 25c 1 2. 5 25c 100 200 25c m^r/i-l-iT (ri-y jv).?m 536 MA650 tfiT 200 200 10 25c 60 2 5 c 1 5 25c 100 200 25c l^iìl-hiT (i'M* ~M'/), FRD 536 MA651 «JT 200 200 20 25c 150 25c 1 10 25c 100 200 25c 2#JftyJr-f'/7" (l'M* Hy), FRD 537 MA653 KT 300 300 5 25c 45 25c 1. 0 2. 5 25c 100 300 25c 2^f/9-iif (l'M* W). FRD 536 MA654 «JT 300 300 10 25c 60 25c 1. 0 5 25c 100 300 25c 23R?tÌi-ìll' (l'M* W), FRD 536 -
OCR Scan
KD100HB-160 KS823C04 KS823C06 KS923C2 LB-156 LBA-02 IR 536 MA644 MA670 MA-651 MA765 KD100HB-120 KPS23C04 KP923C2
Abstract: MAX CW Power Outputs (W) 20 -30A at 25°C Heat Sink 40 -32A at 25°C Heat Sink 60 -34A at 25°C Heat Sink Operating Current (A) -26 30 20W at 25°C Heat Sink -28 32 40W at 25°C Heat Sink -30 34 60W at 25°C Heat Sink Threshold Current (A) - 7.5 9.0 25°C Heat Sink - 7.5 9.0 25°C Heat Sink - 7.5 9.0 25°C Heat Sink Slope Efficiency (W/A 0.9 1.1 -25°C Heat Sink 1.7 1.8 -25°C Heat Sink 2.3 2.5 -25°C Heat Sink Industrial Microphotonics
Original
ASM06C020 ASM808-20 808N ASM01C020 ASM12C040 ASM14C060 B-09/01
Abstract: LM7847 (VIN =9.7V) PARAMETER SYMBOL TEST CONDITIONS MIN TJ =25°C, IOUT=5mA ~ 1.0A 4.512 Output Voltage VOUT VIN =7.2V ~ 19.7V, 4.465 IOUT=5mA ~ 1.0A, PD15W Dropout Voltage VD TJ =25°C TJ =25°C,IOUT=5mA ~ 1.0A Load Regulation VOUT TJ =25°C,IOUT=0.25A ~ 0.75A Line regulation VIN =7.2V ~ 19.7V, TJ =25°C VOUT VIN =7.2V ~ 19.7V, TJ =25°C, IOUT=1.0A Quiescent Current IQ TJ =25°C, IOUT1 , =25°C 62 Peak Output Current IPEAK TJ =25°C Short-Circuit Current ISC VIN =35V, TJ =25°C For UTC Unisonic Technologies
Original
LM7807 lm7805 heatsink LM78XXL-TF3-T LM7815 LM7809 LM7808 LM78XX LM78XXL LM78XXG QW-R101-006
Abstract: 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign , TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient XXd mW/°C 670 (Note , = 25°C Derate above 25°C See detailed ordering, shipping, and specific marking information in , . ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP , Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign ON Semiconductor
Original
MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5316DW1T1G
Abstract: 200 200 5 30 1 2. 5 25c 100 200 25c i^rsMn' (l'M'w) 483 MA649 tóT 200 200 5 25c 30 25c 1 2. 5 25c 100 200 25c m^r/i-l-iT (ri-y jv).?m 536 MA650 tfiT 200 200 10 25c 60 2 5 c 1 5 25c 100 200 25c l^iìl-hiT (i'M* ~M'/), FRD 536 MA651 «JT 200 200 20 25c 150 25c 1 10 25c 100 200 25c 2#jftyjr-f'/7" (l'm* hy), frd 537 MA653 KT 300 300 5 25c 45 25c 1. 0 2. 5 25c 100 300 25c 2^f/9-iif (l'm* w). frd 536 MA654 «JT 300 300 10 25c 60 25c 1. 0 5 25c 100 300 25c 23R?tÌi-ìll' (l'm* w), frd 536 -
OCR Scan
LBA-04Z1 LBS-04 LBA-06 LBA-08 LBA-10 MA749
Abstract: MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP , Dissipation TA = 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance - , Reel 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 , MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - ON Semiconductor
Original
Abstract: Regulators I Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Input voltage Rating 35 *1 , internal circuit cuts off the output. I Electrical Characteristics at Ta = 25°C · AN78M05, AN78M05F (5V , Tj = 25°C VI = 7.5 to 20V, IO = 5 to 350mA, Tj = 25°C, PD * Line regulation Load regulation , VI = 7.5 to 25V, Tj = 25°C 3 100 mV VI = 8 to 25V, Tj = 25°C 1 50 mV IO = 5 to 500mA, Tj = 25°C 20 100 mV IO = 5 to 200mA, Tj = 25°C 10 50 mV 4 6 Panasonic
Original
AN78M09 AN78M08 AN78M12F AN78M06F AN78M09F AN78M12 HSIP003-P-0000
Abstract: Q13 Z1 Q16 R21 R17 Q12 Z2 R11 R18 R4 R8 1 3 GND (Ta = 25°C , TA78M18F 40 TA78M20F TA78M24F (Ta = 25°C) IOUT PD (Tc = 25°C) 0.5 1 10 A W : Tjopr -30~150 °C Tstg -55~150 , 5.25 V mA Tj = 25°C Tj = 25°C mV Reg·load 1 Tj = 25°C VOUT 1 Tj = 25°C IB 1 Tj = 25°C 4.5 8.0 IBI 1 8.5 V VIN 25.5 V, Tj -
Original
TA78M05 TA78M05F TA78M06F TA78M08F TA78M09F TA78M10F TA78M15F TA78M12F
Abstract: 139b 1SR29-1000 ÏÏVTC 1000 250 98c 5400 25c 1. 05 250 25c 800 1000 25c 701 1SR29-200 200 250 98c 5400 25c 1. 05 250 25c 800 200 25c 701 1SR29-400 STSTC 400 250 98c 5400 25c 1.05 250 25c 800 400 25c 701 1SR29-600 »T«7E 600 250 98c 5400 25c 1.05 250 25c 800 600 25c 701 1SB29-800 ST«TC 800 250 98c 5400 25c 1.05 250 25c 800 800 25c 701 1SR35-100A a â'"A 150 100 1 , 113e 1SR80-100 tf 'J i> y 100 8 125c 1150 50] 1. 1 8 25c 50 100 25c 41 1SR80-200 * >) y 200 -
OCR Scan
1SR17-800 1SR35-200A 1SS35-400A 1SR36 1S817-600 1SR37
Abstract: 139b 1SR29-1000 ÏÏVTC 1000 250 98c 5400 25c 1. 05 250 25c 800 1000 25c 701 1SR29-200 200 250 98c 5400 25c 1. 05 250 25c 800 200 25c 701 1SR29-400 STSTC 400 250 98c 5400 25c 1.05 250 25c 800 400 25c 701 1SR29-600 »T«7E 600 250 98c 5400 25c 1.05 250 25c 800 600 25c 701 1SB29-800 ST«TC 800 250 98c 5400 25c 1.05 250 25c 800 800 25c 701 1SR35-100A a â'"A 150 100 1 , 113e 1SR80-100 tf 'J i> y 100 8 125c 1150 50] 1. 1 8 25c 50 100 25c 41 1SR80-200 * >) y 200 -
OCR Scan
isr35 isr35-200a 1SR68 1SR69 1SR80 1SR80-600 1SR82-200 1SR82-400
Abstract: 200 200 5 30 1 2. 5 25c 100 200 25c i^rsMn' (l'M'w) 483 MA649 tóT 200 200 5 25c 30 25c 1 2. 5 25c 100 200 25c m^r/i-l-iT (ri-y jv).?m 536 MA650 tfiT 200 200 10 25c 60 2 5 c 1 5 25c 100 200 25c l^iìl-hiT (i'M* ~M'/), FRD 536 MA651 «JT 200 200 20 25c 150 25c 1 10 25c 100 200 25c 2#jftyjr-f'/7" (l'm* hy), frd 537 MA653 KT 300 300 5 25c 45 25c 1. 0 2. 5 25c 100 300 25c 2^f/9-iif (l'm* w). frd 536 MA654 «JT 300 300 10 25c 60 25c 1. 0 5 25c 100 300 25c 23R?tÌi-ìll' (l'm* w), frd 536 -
OCR Scan
1025c MA695 MA749A MA750 MA750A MA751 MA751A
Abstract: 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, - minus sign , 25°C Derate above 25°C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions , position may vary depending upon manufacturing location. mW Total Device Dissipation TA = 25°C Derate above 25°C mW/°C Thermal Resistance - Junction-to-Ambient RqJA 493 (Note 1) 325 , . http://onsemi.com 2 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise ON Semiconductor
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MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G
Abstract: Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristics TA79005S TA79006S TA79007S TA79008S , temperature Storage temperature Junction temperature Thermal resistance (Ta = 25°C) (Tc = 25°C) PD Topr Tstg , 0.1 uF) Characteristics Output voltage Line regulation Symbol VOUT Reg·line Test Circuit 1 1 Tj = 25°C Tj = 25°C -12 V VIN -8 V -25 V VIN -7 V 5 mA IOUT 1.5 A 250 mA IOUT 750 mA -20 V VIN -7 V , Reg·load VOUT IB IB VNO R.R. ISC VD TCVO 1 1 1 1 1 2 3 1 1 1 Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Toshiba
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TA79005 TA79009S TA79010S TA79012S TA79015S TA79018S
Abstract: Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit TA79005S , TA79015S TA79018S -40 TA79020S TA79024S Power dissipation (Ta = 25°C) (Tc = 25°C) PD 2 20 , Tj = 25°C Line regulation Reg·line 1 Tj = 25°C Load regulation Reg·load 1 Tj = 25°C Output voltage VOUT 1 Tj = 25°C IB 1 Quiescent current change Line Load IB 1 1 Tj = 25°C Typ. Max Unit V -5.2 -5.0 -4.8 -12 V VIN -8 V Toshiba
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Abstract: ,20,24SB Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating , (Ta = 25°C) 2 2004-07-01 TA79005,06,07,08,09,10,12,15,18,20,24SB TA79005SB Electrical , Tj = 25°C Line regulation Reg·line 1 Tj = 25°C Load regulation Reg·load 1 Tj = 25°C Output voltage VOUT 1 Tj = 25°C IB 1 Quiescent current change Line Load IB 1 1 Tj = 25°C Typ. Max Unit V -5.2 -5.0 -4.8 -12 V VIN -8 V Toshiba
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TA79006SB TA79007SB TA79008SB TA79009SB TA79012SB TA79015SB ta79010sb TA79010SB
Abstract: FEBRUARY 1997 - REVISED MAY 2004 TLE2061 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 500 uV , at 25°C. The PW package is available left-end taped and reeled (indicated by the LE suffix on the , °C -55°C to 125°C VIOmax AT 25°C 1 mV 2 mV 4 mV 1 mV 2 mV 4 mV 1 mV 2 mV 4 mV SMALL OUTLINE (D) TLE2062BCD , °C to 70°C -40°C to 85°C -55°C to 125°C VIOmax AT 25°C 2 mV 4 mV 6 mV 2 mV 4 mV 6 mV 2 mV 4 mV 6 mV , Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . Texas Instruments
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TLE206 SLOS193B TL206 ISO/TS16949
Abstract: 1.5 mV TLE2061ACD - TLE2061CD VIOmax AT 25°C TA 0 C 70°C 0°C to 70 C 3 mV 500 , and reeled. Add R suffix to device type (e.g., TLE2061ACDR).Chips are tested at 25°C. The PW package , ., TLE2061CPWLE). TLE2062 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C SMALL OUTLINE (D , TLE2064AMW TLE2064MW TA VIOmax AT 25°C 0°C to 70°C 2 mV 4 mV 6 mV -40°C to 85°C -55°C , . . . . -80 mA Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . Texas Instruments
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5962-9080901mca TLV2432 TLE2426 TLE2061ID TLE2061AMD TLE2061AID
Abstract: DVDD = Min, IOH = Max Unit Limits Max V 02 2.4 25°C, -40°C to 100°C DVDD = Min, IOL = Max 2.4 01 0.4 25°C, -55°C to 125°C VOL 01 25°C, -55°C to 125°C Low level output voltage 25°C, -40°C to 100°C 02 0.4 V High impedance current IZ DVDD = Max 25°C All -5.0 +5.0 uA Input current II VI = VSS to DVDD 25°C All -5.0 +5.0 uA Input current (with internal pullup) IIPU Inputs with internal pullups 25°C -
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SM320VC33PGEA120EP SM320VC33GNMM150EP h1n1 MS-026 V62/03610 5962-V007-06 V62/03610-01XE V62/03610-02YA
Abstract: Current D D 1 pA Typ at TA = 25°C Common-Mode Input Voltage Range Includes the Negative Rail Fully , TA = 25°C 40 30 20 10 0 1 10 100 f - Frequency - Hz 1k 10 k The device inputs and , PRECISION OPERATIONAL AMPLIFIERS TLC2201 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 200 uV 0°C to , 25°C 35 nV/Hz 30 nV/Hz - 35 nV/Hz 30 nV/Hz - 35 nV/Hz 30 nV/Hz Vnmax f = 1 kHz AT 25°C 15 nV/Hz 12 , . TLC220xBCDR). Chip forms are tested at 25°C only. TLC2202 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C Unisonic Technologies
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78TXXA 78T09A 78t05 1.0A 78T05A 78T06A 78T08A QW-R101-011 78T33A
Abstract: OPTIONS PACKAGE Ta V|o max AT 25°C 1 mV 2 mV 4 mV 1 mV 2 mV 4 mV 1 mV 2 mV 4 mV SMALLOUTLINE (D , . 80 mA Duration of short-circuit current at (or below) 25°C (see Note 3 , PACKAGE D FK JG L P T A < 25°C POWER RATING 725 mW 1375 1050 650 1000 mW mW mW mW DERATING FACTOR ABO VE T a = 25°C 5.8 mW/°C 11.0 mW/°C 8.4 mW/°C 5.2 mW/°C 8.0 mW/°C T a = 70°C POWER RATING 464 mW 880 mW , T Af 25°C Full range 25°C MIN TYP 1 0.9 0.7 6 0.04 1 MAX 5 7 4 6 3 5 UNIT l|0 l|B Texas Instruments
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TLC220 SLOS175B
Abstract: 25°C Common-Mode Input Voltage Range Includes the Negative Rail Fully Specified For Both , . V n ­ Equivalent Input Noise Voltage ­ nV/ Hz Hz Vn 50 VDD = 5 V RS = 20 TA = 25°C 40 , TLC2201 AVAILABLE OPTIONS VIOmax AT 25°C 200 uV 200 uV 500 uV 200 uV 200 uV 500 uV 200 uV 200 uV 500 uV Vnmax f = 10 Hz AT 25°C 35 nV/Hz 30 nV/Hz - 35 nV/Hz 30 nV/Hz - 35 nV/Hz 30 nV/Hz - Vnmax f = 1 kHz AT 25°C 15 nV/Hz 12 nV/Hz - 15 nV/Hz 12 nV/Hz - 15 nV/Hz 12 nV/Hz - PACKAGED DEVICES SMALL OUTLINE -
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TLE2062A tle2062cp IC equivalent ic TLE2062B 305E3 922E6 0E-18 000E-12
Abstract: requirements. MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 6 5 4 and Q , T A = 25°C Derate above 25°C Thermal Resistance ­ Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Symbol Value V CBO 50 V CEO , 2/29 LESHAN RADIO COMPANY, LTD. LMUN53xxDW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C , 25°C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Symbol Min Texas Instruments
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SLOS175 SLYT015 SLYT005 SLOA024A SSYA008 SLOA033
Abstract: Current D D 1 pA Typ at TA = 25°C Common-Mode Input Voltage Range Includes the Negative Rail Fully , TA = 25°C 40 30 20 10 0 1 10 100 f - Frequency - Hz 1k 10 k The device inputs and , PRECISION OPERATIONAL AMPLIFIERS TLC2201 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 200 uV 0°C to , 25°C 35 nV/Hz 30 nV/Hz - 35 nV/Hz 30 nV/Hz - 35 nV/Hz 30 nV/Hz Vnmax f = 1 kHz AT 25°C 15 nV/Hz 12 , . TLC220xBCDR). Chip forms are tested at 25°C only. TLC2202 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C Leshan Radio Company
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LMUN5313DW1T1G LMUN5311DW1T1G LMUN5312DW1T1G LMUN5313DW1T3G LMUN5314DW1T1G LMUN5315DW1T1G LMUN53 SC-88/SOT-363
Abstract: Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter , UNR521xG Series Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter , Characteristics (continued) Ta = 25°C ± 3°C Parameter Resistance UNR521MG ratio UNR521NG UNR5218G/5219G UNR521ZG , 25°C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 102 IC / IB = 10 400 hFE , ) 300 Ta = 75°C 25°C 200 -25°C 100 40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 30 0.3 mA 1 Ta = 75 Texas Instruments
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Abstract: Internal Connection R1 B R2 E 0 to 0.1 C Absolute Maximum Ratings Ta = 25°C Parameter , RoHS Directive (EU 2002/95/EC). UNR521x Series Electrical Characteristics Ta = 25°C ± 3 , (continued) Ta = 25°C ± 3°C Parameter Resistance UNR521M ratio UNR521N UNR5218/5219 UNR521Z UNR5214 UNR521T , ) Characteristics charts of UNR5210 IC VCE IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C VCE(sat) IC Collector-emitter , transfer ratio hFE 50 Collector current IC (mA) 300 Ta = 75°C 25°C 200 -25°C 100 40 0.4 mA 0.5 Panasonic
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UNR521 UNR5210G UNR5211G UNR5212G UNR5213G UNR5214G
Abstract: Equivalent Circuit 1 2003-01-29 TA79005,06,07,08,09,10,12,15,18,20,24S Maximum Ratings (Ta = 25°C , dissipation (Ta = 25°C) (Tc = 25°C) PD 2 20 W Operating temperature Topr -30~85 °C , voltage VOUT 1 Tj = 25°C Line regulation Reg·line 1 Tj = 25°C Load regulation Reg·load 1 Tj = 25°C Output voltage VOUT 1 Tj = 25°C IB 1 Tj = 25°C , Tj = 25°C Min Typ. Max Unit -5.2 -5.0 -4.8 V -12 V VIN -8 V 7 Panasonic
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UN521 UNR5211 UNR5212 UNR5213 UNR5215 UNR5216
Abstract: Absolute Maximum Ratings (Ta = 25°C) Characteristics TA79005SB TA79006SB TA79007SB TA79008SB TA79009SB , temperature Storage temperature Junction temperature Thermal resistance (Ta = 25°C) PD Topr Tstg Tj Rth (j-a , ) Characteristics Output voltage Line regulation Symbol VOUT Reg·line Test Circuit 1 1 Tj = 25°C Tj = 25°C -12 V , IB IB VNO R.R. ISC VD TCVO 1 1 1 1 1 2 3 1 1 1 Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C mV V mA mA uVrms dB A V mV/°C Ta = 25°C, IOUT = 20 mA, 10 Hz f 100 kHz f = 120 Hz, IOUT = 20 mA, Tj = Toshiba
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Abstract: uV Max at TA = 25°C Macromodel Included Performance Upgrades for the TS272, TS274, TLC272, and , VOLTAGE vs SUPPLY VOLTAGE 16 TA = 25°C 14 12 IO = ± 50 uA 10 8 IO = ± 500 uA The , TLC2272 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax At 25°C SMALL OUTLINE (D) CERAMIC LCC , device type (e.g., TLC2272PWR). § Chips are tested at 25°C. TLC2274 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C SMALL OUTLINE (D) CERAMIC LCC (FK) CERAMIC DIP (J) PLASTIC Toshiba
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TA79018SB TA79020SB TA79024SB
Abstract: Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage , Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 uA , RoHS Directive (EU 2002/95/EC). UNR521x Series Electrical Characteristics (continued) Ta = 25°C ± , temperature Ta (°C) Characteristics charts of UNR5210 Ta = 25°C Collector current IC (mA) 50 40 , saturation voltage VCE(sat) (V) IC VCE 60 10 1 Ta = 75°C 25°C 10-1 300 Ta = 75°C 25°C 200 Texas Instruments
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TLC274 TLC2272IP TLC227 SLOS190G
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