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245 transistor

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Abstract: ISM 2.45 GHz LDMOS RF power transistor portfolio RF power as a robust and highly efficient energy source With nearly a decade of leadership expertise in the industrial, scientific and medical (ISM) market, NXP has now created the industry's first dedicated and complete RF power transistor portfolio for the 2.45 GHz ISM band. The ISM 2.45 GHz LDMOS power transistor portfolio meets the need for , 12 15 Test signal CW CW CW CW Package SOT975 SOT502 SOT539 SOT539 2.45 GHz industrial ... Original
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2 pages,
965.26 Kb

SOT502 RF based industrial 245 transistor datasheet abstract
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Abstract: Bestelibezeiofanung fiir eiaen Transistor des Eyps S f l 2 4 5 1 Transistor SFE 245 TQL 38 464 Inderungen vorbehalten! 3 B PE 245 E3902A0 E3902A0 10° 10' 10? il- È k . - Iß 140/2/81 III/18/397 III/18/397 , Vorläufige technische Daten SF£ 245 SUizium-npn-Spitaxie-Planar-Traxusisfeor im , h r e n w e r k "anna seghers" n e u h a u s im veb kombinat m ik r o e le k tr o n ik 8F£ 245 , % f s 36 Mz 2 SFE 245 la zol&ssigan Arbeifcsbareioh darf die Yerluetleistung» iabagrierè ... OCR Scan
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4 pages,
192.12 Kb

VEB Kombinat transistor C 245 b transistor AE 245 transistor TRANSISTOR BI 185 datasheet abstract
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Abstract: ERICSSON S PTB 20050 2 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20050 is a class A, NPN, common emitter RF Power Transistor intended for 24.5 VDC operation across the , R F SPECIFICATIONS (100 % Tested) Characteristics Gain (VOE= 24.5 V, Pout = 1W , Icq = 270mA F= , 24.5 V, Icq = 270mA F= 1.501 GHz) P-1dB 2.0 - W Input Return Loss (Vce= 24.5 V, Pout = 1 W , Icq = 270mA F= 1.501 GHz) Rtn Loss 12 - - dB Collector Efficiency (V ce= 24.5 V, Pout ... OCR Scan
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2 pages,
53.99 Kb

5 GHZ TRANSISTOR 1W 245 transistor datasheet abstract
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Abstract: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W BFG480W ABSTRACT · Description of the product , amplifier for a 2.45 GHz WLAN. · Main results At a frequency of 2.45 GHz, a supply voltage of 3.0 V, and a , Application information 2.45 GHz power amplifier with the BFG480W BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W BFG480W, it is possible to design Power Amplifiers (PAs) for high frequency ... Original
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8 pages,
38.09 Kb

Um 3562 BFG400 application notes philips rf HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz philips application notes 245 transistor BC817 amplifier TRANSISTOR 12 GHZ BFG480W 2.45 Ghz power amplifier 2.45 Ghz power amplifier 45 dbm PH ON 4307 BFG480W abstract
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Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF , TRANSISTOR TRANSISTOR | CONDITION OF SOLDERING DIP AND HAND SOLDERING (CONDITION OF SOLDERING DIP Soldering Temperature : 245 to 265 deg. Soldering Time : 10s Max. [deg. 300 250 0) O) , deg. Cooling ( in air) _ / \ / 245 deg. 130 deg J ^ 100 deg. more than 2min. less than ... OCR Scan
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3 pages,
290.83 Kb

T092 2SC1809S 2SC2058S 2SC2926S 2SC401 2SC4010 2SC4043S ROHM FTL 2SC1740S 2SC4044S pine alpha st-100s arakawa chemical 2sc5083 datasheet abstract
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Abstract: Transistors Low Frequency Transistor (20V, 3A) 2SD2150 2SD2150 / 2SC4115S 2SC4115S / 2SD2264 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 2SB1424 / 2SA1585S 2SA1585S. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor (96-237-C74 96-237-C74) 243 Transistors FAbsolute maximum ratings (Ta , / 2SC4115S 2SC4115S / 2SD2264 2SD2264 FElectrical characteristic curves 245 ... Original
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3 pages,
106.36 Kb

2SD2264 2SC4115S 2SB1424 2SA1585S equivalent transistor an 243 2SA1585 npn 2a NPN Silicon Epitaxial Planar Transistor 2SC4115 2SD2150 transistor Ic 1A datasheet NPN ic 245 245 transistor 2SD2150 abstract
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Abstract: UHF amplifier module 148 BSH103 BSH103 N-channel enhancement mode MOS transistor 156 BSH104 BSH104 N-channel enhancement mode MOS transistor 163 BSH105 BSH105 N-channel enhancement mode MOS transistor 166 BSH106 BSH106 N-channel enhancement mode MOS transistor 169 BSH107 BSH107 N-channel enhancement mode MOS transistor 172 BSH203 BSH203 P-channel enhancement mode MOS transistor 175 BSH204 BSH204 P-channel enhancement mode MOS transistor 178 BSH205 BSH205 P-channel enhancement mode MOS transistor ... Original
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5 pages,
9.9 Kb

uhf range fm modulator radio fm lcd SWITCHING TRANSISTOR 144 GRAPHIC LCD MODULE satellite UHF transceiver SA626 transistor d 1557 TRANSISTOR TRANSMIT FM 1037 fm receiver ic transistor D 882 p transistor 846 4w TRANSISTOR BTL POWER AMPLIFIER datasheet abstract
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Abstract: /band RF front-end Satellite/Cellular dual-band front-end 2.45 GHz low voltage RF tranceiver Image , gain RF predriver amplifier 900 MHz transmit modulator and 2.2 GHz fractional-N synthesizer 2.45 GHz RF , N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement ... OCR Scan
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5 pages,
184.69 Kb

transistor for RF amplifier and mixer line AMPLIFIER satellite audio ic 1026 amplifier TRANSISTOR 12 GHZ audio compandor IC amplifier TRANSISTOR 14 GHZ SA601 SA602A SA611 SA612A SA620 SA621 SA601 abstract
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Abstract: module N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channei enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor N-channel enhancement mode vertical D-MOS transistor N-channel enhancement mode vertical D-MOS ... OCR Scan
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5 pages,
182.06 Kb

wireless lcd receiver RADIO fm RECEIVER IC UHF Philips 787 receiver audio compandor IC uhf range fm modulator datasheet abstract
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Abstract: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES , VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBTH10 MMBTH10 , Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification MMBTH10 MMBTH10 TYPICAL , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMBTH10 MMBTH10 , 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device ... Original
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3 pages,
169.94 Kb

footprint transistor Transistor 2 a sot23 Marking br sot23 Transistor transistor 3em marking code SS* SOT23 transistor sot23 marking code br marking code PC sot-23 MMBTH10 marking 3EM sot-23 marking pc sot-23 transistor transistor sot code 3em sot-23 datasheet abstract
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MOS TRANSISTOR 8 771 Datasheets STD2NA60 STD2NA60 STD2NA60 STD2NA60 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 9 657 Datasheets STD2N50-1 STD2N50-1 STD2N50-1 STD2N50-1 N-CHANNEL ENHANCEMENT MODE POWER MOS LOW THRESHOLD POWER MOS TRANSISTOR 8 600 Datasheets STP2NA50 STP2NA50 STP2NA50 STP2NA50 STP2NA50FI STP2NA50FI STP2NA50FI STP2NA50FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 8 542 Datasheets STD20NE03L STD20NE03L STD20NE03L STD20NE03L TRANSISTORS 8 485 Datasheets STD3NA50 STD3NA50 STD3NA50 STD3NA50 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/245.htm
STMicroelectronics 31/03/1999 15.26 Kb HTM 245.htm
NPN wideband transistor NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin (1999-12-22) 2.45 GHz power amplifier with the BFG480W BFG480W BFG480W BFG480W (1999-12-22) 1880 MHz PA Driver with BFG480W BFG480W BFG480W BFG480W 28 1.8@f2?1.2@f1 2 28 4.5 16 360 Transistor wideband NPN up to 25 GHz 2000 250 NPN 900 21 360 Transistor wideband NPN up to 25 GHz
www.datasheetarchive.com/files/philips/pip/bfg480w_3-v1.html
Philips 14/02/2002 11.62 Kb HTML bfg480w_3-v1.html
NPN wideband transistor NPN double polysilicon wideband transistor with buried layer for low voltage applications in a the BFG480W BFG480W BFG480W BFG480W (1999-12-22) 2.45 GHz power amplifier with the BFG480W BFG480W BFG480W BFG480W (1999-12-22) 1880 MHz PA Transistor wideband NPN up to 25 GHz Transistor wideband NPN up to 25 GHz 16 2 LNA BFG480W BFG480W BFG480W BFG480W NPN wideband transistor 09-Jul-98 Preliminary Specification 16
www.datasheetarchive.com/files/philips/pip/bfg480w_n_2-v1.html
Philips 14/02/2002 11.65 Kb HTML bfg480w_n_2-v1.html
Product information page BFG480W BFG480W BFG480W BFG480W; NPN wideband transistor General info NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. Features High power gain High efficiency 1999-12-22 2.45 GHz power amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-22 2 GHz low noise amplifier count File size BFG480W BFG480W BFG480W BFG480W NPN wideband transistor 21-okt-98 Product
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Philips 24/04/2003 4.44 Kb HTML bfg480w_3.html
Product information page BFG480W BFG480W BFG480W BFG480W; NPN wideband transistor General info NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Features High power gain High BFG480W BFG480W BFG480W BFG480W 1999-12-22 2.45 GHz power amplifier with the BFG480W BFG480W BFG480W BFG480W 1999-12-22 2 GHz low noise count File size BFG480W BFG480W BFG480W BFG480W NPN wideband transistor 09-jul-98 Preliminary
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Philips 23/04/2003 4.53 Kb HTML bfg480w_n_2.html
Dual Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor
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Infineon 26/10/2000 41.9 Kb HTM pro~2217.htm
Dual Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Dual Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor
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Infineon 26/10/2000 41.9 Kb HTM pro~1695.htm
, Silicon Photodarlington Transistor Quad Channel Optocoupler, GaAs IRED, Silicon Photodarlington Transistor Quad Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor Quad Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor Quad Channel Optocoupler, GaAs IRED, Silicon NPN Photodarlington Transistor
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Infineon 28/10/2000 33.9 Kb HTM pro~1696.htm
BU1508DX BU1508DX BU1508DX BU1508DX - Silicon Diffused Power Transistor BU2508AF BU2508AF BU2508AF BU2508AF - Silicon Diffused Power Transistor BU2508AX BU2508AX BU2508AX BU2508AX - Silicon Diffused Power Transistor BU2508DF BU2508DF BU2508DF BU2508DF - Silicon Diffused Power Transistor BU2515DX BU2515DX BU2515DX BU2515DX - Silicon Diffused Power Transistor
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Philips 25/04/2003 95.63 Kb HTML 42736.html
BF547 BF547 BF547 BF547 - NPN 1 GHz wideband transistor BF547W BF547W BF547W BF547W - NPN 1 GHz wideband transistor BFC505 BFC505 BFC505 BFC505 - NPN wideband cascode transistor BFC520 BFC520 BFC520 BFC520 - NPN wideband cascode transistor BFE505 BFE505 BFE505 BFE505 - NPN wideband differential transistor
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Philips 25/04/2003 73.36 Kb HTML 45217.html