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BQ24314CEVM-245 Texas Instruments BQ24314CEVM-245 Evaluation Module ri Buy

245 transistor

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Abstract: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W BFG480W ABSTRACT · Description of the product , amplifier for a 2.45 GHz WLAN. · Main results At a frequency of 2.45 GHz, a supply voltage of 3.0 V, and a , Semiconductors Application information 2.45 GHz power amplifier with the BFG480W BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W BFG480W, it is possible to design Power Amplifiers (PAs ... Philips Semiconductors
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8 pages,
38.09 Kb

application notes philips rf BC817 BFG400 HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz 245 transistor philips application notes 2.45 Ghz power amplifier 30 db Um 3562 amplifier TRANSISTOR 12 GHZ BFG480W 2.45 Ghz power amplifier PH ON 4307 2.45 Ghz power amplifier 45 dbm TEXT
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Abstract: DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER , area call TOLL FREE 800-526-4581 DIODE TRANSISTOR CO INC H? TRANSISTOR OUTLINES DE I 2040355 â , .750 T72h .220 1.055 .520 .080 ,365 .004 .245 .710 .100 8-32N03A 8-32N03A 45" .230 1.065 .540 .100 .385 , 1.055 ,520 .073 .365 .005 ,245 .710 .100 8-32UNC-2A 8-32UNC-2A 46" .230 1.065 ,530 .077 .385 .275 .760 .130 , 800-526-4581 I . 2B48352 2B48352 DIODE TRANSISTOR CO DIODE TRANSISTOR CO INC TNr. 21C 00095 orfSfl-ÖI ~57 ]>F1 ... OCR Scan
datasheet

6 pages,
703.79 Kb

2N1308 2N1306 2N5900 2N4277 r4k diode 2N4048 2N2157 2N277 2N1100 760 t85 DTG-2400 2N2144A TRF 840 2N1073 32N03 2N58A 2N629 t85 diode 2N58A 2N629 2N2152 2N58A 2N629 trf 510 transistor 2N58A 2N629 diode t85 2N58A 2N629 2N58A 2N58A 2N629 2N629 /2N2612 2N5436 TEXT
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Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , MOUNTED DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , 120s 1 to 5 deg./s 230 deg., 20 to 30s 245 to 260 deg., 10s Max. 60s Min. 2 times Max. [deg.] 250 , 2.Pre Liminary Heating Time " Recommended peak temperature is over 245 degree. If peak temperature ... OCR Scan
datasheet

5 pages,
624.15 Kb

vmn3 package ST-100S pine alpha st-100s arakawa chemical asahiglass 750H 2SB1051K PSOP TEXT
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Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , MOUNTED DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , 120s 1 to 5 deg./s 230 deg., 20 to 30s 245 to 260 deg., 10s Max. 60s Min. 2 times Max. [deg.] 250 , 2.Pre Liminary Heating Time " Recommended peak temperature is over 245 degree. If peak temperature ... OCR Scan
datasheet

5 pages,
629.19 Kb

VMN3 TUMT3 ST-100S EMT3F 750H 2SB1051K UMT3F TUMT6 PSOP TEXT
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Abstract: Werte von ID und Fds erlaubt, wenn der Transistor dabei thermisch nicht überlastet wird. Die ßosionfG , allowed within this operating area if the transistor is not thermally overloaded as a result. The Æ D S (o , rated reverse voltage of the transistor; its slope is flatter for 50 V types than for 1000 V types and , Abhängigkeit von der Gehäusetemperatur Tc bzw. Umgebungs temperatur r A bei durchgeschaltetem Transistor, d.h , transistor, i.e. at 4.13 Avalanche Energy E * = f(T) Das Diagramm zeigt den Verlauf der maximalen ... OCR Scan
datasheet

9 pages,
261.24 Kb

TEXT
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Abstract: conditions T a b le 3 . Iron Soldering Iron Tem perature M etal case < 245°C < 245°C 245 to 350°C Plastic case 23 A 3 D IN 4I869 4I869 (SO T 23) < 245°C < 245°C < 250°C Soldering D istance from the Case 1.5 to , 5 s 10 s 5 s 3s 5 s 10s 245 to 300°C < 245°C 245 to 300°C < 250°C > 5 mm > 2 mm > 5 mm - Soldering T em perature < 245°C Soldering D istance from the Case > 1.5 mm M ax. A llow able S ol , calculated from I a { mm ) Figure 33. Example For a silicon pow er transistor with Tjmax = 150°C and ... OCR Scan
datasheet

8 pages,
319.47 Kb

TEXT
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Abstract: ISM 2.45 GHz LDMOS RF power transistor portfolio RF power as a robust and highly efficient energy source With nearly a decade of leadership expertise in the industrial, scientific and medical (ISM) market, NXP has now created the industry's first dedicated and complete RF power transistor portfolio for the 2.45 GHz ISM band. The ISM 2.45 GHz LDMOS power transistor portfolio meets the need for , 12 15 Test signal CW CW CW CW Package SOT975 SOT502 SOT539 SOT539 2.45 GHz industrial ... NXP Semiconductors
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datasheet

2 pages,
965.26 Kb

SOT539 SOT502 RF Transistor Selection RF based industrial 245 transistor TEXT
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Abstract: ERICSSON S PTB 20050 2 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20050 is a class A, NPN, common emitter RF Power Transistor intended for 24.5 VDC operation across the , R F SPECIFICATIONS (100 % Tested) Characteristics Gain (VOE= 24.5 V, Pout = 1W , Icq = 270mA F , = 24.5 V, Icq = 270mA F= 1.501 GHz) P-1dB 2.0 - W Input Return Loss (Vce= 24.5 V, Pout = 1 W , Icq = 270mA F= 1.501 GHz) Rtn Loss 12 - - dB Collector Efficiency (V ce= 24.5 V, Pout ... OCR Scan
datasheet

2 pages,
53.99 Kb

5 GHZ TRANSISTOR 1W 245 transistor TEXT
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Abstract: Bestelibezeiofanung fiir eiaen Transistor des Eyps S f l 2 4 5 1 Transistor SFE 245 TQL 38 464 Inderungen vorbehalten! 3 B PE 245 E3902A0 E3902A0 10° 10' 10? il- È k . - Iß 140/2/81 III/18/397 III/18/397 , Vorläufige technische Daten SF£ 245 SUizium-npn-Spitaxie-Planar-Traxusisfeor im , h r e n w e r k "anna seghers" n e u h a u s im veb kombinat m ik r o e le k tr o n ik 8F£ 245 , % f s 36 Mz 2 SFE 245 la zol&ssigan Arbeifcsbareioh darf die Yerluetleistung» iabagrierè ... OCR Scan
datasheet

4 pages,
192.12 Kb

transistor AE VEB Kombinat 245 transistor TRANSISTOR BI 185 transistor C 245 b TEXT
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Abstract: GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the ... Anadigics
Original
datasheet

20 pages,
372 Kb

AWL9924RS34Q1 AWL9924RS34P6 AWL9924RS34P0 AWL9924 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! SIEMENS Small Signal Semiconductors ! BFP93A BFP93A ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 0.75 V IC = 7 mA ! Common Emitter S-Parameters 96.3 0.0779 26.3 0.3507 -89.2 0.500 0.6839 -163.0 5.099 89.8 0.0800 24.5 0.3022 -96.2 0.1239 25.2 0.2677 -144.4 2.400 0.7467 124.4 1.117 24.5 0.1291 24.5 0.2820 -149.4 2.600 26.3 0.3013 -156.7 3.000 0.7683 111.2 0.880 11.1 0.1497 24.5 0.3239 -159.7 3.500 0.7992
/datasheets/files/infineon/ehdata/spar/bfp93a/phv757m0.s2p
Infineon 14/08/1996 2.78 Kb S2P phv757m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR182 BFR182 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 3.5 V IC = 20 mA ! Common Emitter S-Parameters 18.867 118.4 0.0246 70.5 0.6433 -24.5 0.250 0.2517 -92.6 15.918 111.9 0.0290 70.6 0.5952 -24.5 0.300 0.2213 -103.2 13.735 106.8 0.0334 71.9 0.5607 -24.2 0.400 0.1809 -120.1 10.732 72.7 0.4508 -23.6 1.100 0.1521 165.1 4.180 74.1 0.1046 72.0 0.4465 -24.5 1.200 0.1521
/datasheets/files/infineon/ehdata/spar/bfr182/r43v520m.s2p
Infineon 24/11/1997 2.78 Kb S2P r43v520m.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY183 BFY183 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 1 V IC = 6 mA ! Common Emitter S-Parameters 25.5 0.3584 -61.9 1.100 0.6884 -164.4 4.100 83.2 0.0750 24.5 0.3460 -63.3 1.200 0.6853 -168.2 3.772 80.1 0.0763 24.5 0.3375 -64.9 1.300 0.6864 -171.5 3.492 77.5 0.0772 24.8 150.2 1.386 33.2 0.1093 33.2 0.3705 -99.9 4.000 0.7034 143.0 1.236 24.5 0.1212 33.4
/datasheets/files/infineon/ehdata/spar/bfy183/xe1v06m0.s2p
Infineon 16/05/1997 2.78 Kb S2P xe1v06m0.s2p
! SIEMENS Small Signal Semiconductors ! BFQ81 BFQ81 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 0.6 mA ! Common Emitter S-Parameters -138.8 1.273 80.8 0.1386 24.5 0.7762 -33.6 1.300 0.6136 -147.3 1.209 76.1 0.1357 23.3 1.102 67.3 0.1256 23.6 0.7462 -38.7 1.600 0.5942 -171.0 1.037 62.8 0.1209 24.5 0.7404 0.550 13.2 0.5210 34.7 0.5003 -158.2 5.500 0.6919 64.3 0.594 9.2 0.5926 24.5 0.5562
/datasheets/files/infineon/ehdata/spar/bfq81/ra5v0m60.s2p
Infineon 14/08/1996 2.78 Kb S2P ra5v0m60.s2p
BFG480W BFG480W_N_2 Product information page BFG480W BFG480W; NPN wideband transistor General info NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Features High 2.4 GHz low noise amplifier with the BFG480W BFG480W 1999-12-22 2.45 GHz power amplifier with the Publication releasedate Datsheet status Page count File size BFG480W BFG480W NPN wideband transistor
/datasheets/files/philips/pip/bfg480w_n_2.html
Philips 23/04/2003 4.53 Kb HTML bfg480w_n_2.html
! SIEMENS Small Signal Semiconductors ! BFR181W BFR181W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 15 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 96.5 0.0549 67.7 0.5306 -24.4 0.800 0.2363 -130.7 6.702 92.9 0.0608 68.6 0.5167 -24.5 0.900 0.2243 -138.1 5.995 89.8 0.0672 69.3 0.5067 -24.5 1.000 0.2166 -145.8 5.460 86.9
/datasheets/files/infineon/ehdata/spar/bfr181w/w38v015m.s2p
Infineon 19/02/1996 2.22 Kb S2P w38v015m.s2p
! SIEMENS Small Signal Semiconductors ! BFR181W BFR181W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 15 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 96.5 0.0549 67.7 0.5306 -24.4 0.800 0.2363 -130.7 6.702 92.9 0.0608 68.6 0.5167 -24.5 0.900 0.2243 -138.1 5.995 89.8 0.0672 69.3 0.5067 -24.5 1.000 0.2166 -145.8 5.460 86.9
/datasheets/files/siemens/ehdata/spar/bfr181w/w38v015m-v1.s2p
Siemens 09/08/1994 2.22 Kb S2P w38v015m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 0.5 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.9935 -4.3 0.150 0.9577 -24.5 1.791 160.2 0.0423 75.4 0.9872 -6.4 0.200 0.9357 -32.5 0.1204 38.4 0.8725 -22.5 0.800 0.6620 -112.0 1.192 94.1 0.1227 34.8 0.8587 -24.5 0.900
/datasheets/files/infineon/ehdata/spar/bfs17p/rm10vm50.s2p
Infineon 30/07/1997 2.38 Kb S2P rm10vm50.s2p
! SIEMENS Small Signal Semiconductors ! BF840 BF840 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2 V IC = 3 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 84.3 0.9967 -1.2 0.020 0.8525 -24.5 8.682 163.5 0.0052 77.5 0.9907 -2.4 0.050 0.7794 0.600 0.5856 -177.2 1.150 57.1 0.0345 89.2 0.8706 -24.5 0.700 0.5992 177.1 0.981 50.3
/datasheets/files/infineon/ehdata/spar/bf840/rw2v03m0.s2p
Infineon 30/07/1997 2.38 Kb S2P rw2v03m0.s2p