NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W BFG480W ABSTRACT · Description of the product , amplifier for a 2.45 GHz WLAN. · Main results At a frequency of 2.45 GHz, a supply voltage of 3.0 V, and a , Application information 2.45 GHz power amplifier with the BFG480W BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W BFG480W, it is possible to design Power Amplifiers (PAs) for high frequency ... | Original |
8 pages, |
Um 3562 245 transistor application notes philips rf BC817 BFG400 BFG480W amplifier TRANSISTOR 12 GHZ 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier PH ON 4307 BFG480W abstract |
|
|||
| Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF , TRANSISTOR TRANSISTOR | CONDITION OF SOLDERING DIP AND HAND SOLDERING (CONDITION OF SOLDERING DIP Soldering Temperature : 245 to 265 deg. Soldering Time : 10s Max. [deg. 300 250 0) O) , deg. Cooling ( in air) _ / \ / 245 deg. 130 deg J ^ 100 deg. more than 2min. less than ... | OCR Scan |
3 pages, |
T092 2SC1809S 2SC2058S 2SC2926S 2SC401 2SC4010 2SC4043S pine alpha st-100s arakawa chemical ROHM FTL 2SC1740S 2SC4044S 2sc5083 datasheet abstract |
|
|||
| Abstract: Transistors Low Frequency Transistor (20V, 3A) 2SD2150 2SD2150 / 2SC4115S 2SC4115S / 2SD2264 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 2SB1424 / 2SA1585S 2SA1585S. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor (96-237-C74 96-237-C74) 243 Transistors FAbsolute maximum ratings (Ta , / 2SC4115S 2SC4115S / 2SD2264 2SD2264 FElectrical characteristic curves 245 ... | Original |
3 pages, |
2SD2264 2SC4115S 2SD2150 2SB1424 equivalent transistor an 243 2SA1585S npn 2a NPN Silicon Epitaxial Planar Transistor 2SC4115 transistor Ic 1A datasheet NPN 245 transistor ic 245 2SD2150 abstract |
|
|||
| Abstract: UHF amplifier module 148 BSH103 BSH103 N-channel enhancement mode MOS transistor 156 BSH104 BSH104 N-channel enhancement mode MOS transistor 163 BSH105 BSH105 N-channel enhancement mode MOS transistor 166 BSH106 BSH106 N-channel enhancement mode MOS transistor 169 BSH107 BSH107 N-channel enhancement mode MOS transistor 172 BSH203 BSH203 P-channel enhancement mode MOS transistor 175 BSH204 BSH204 P-channel enhancement mode MOS transistor 178 BSH205 BSH205 P-channel enhancement mode MOS transistor ... | Original |
5 pages, |
radio fm lcd cordless phone Transceiver IC D 1062 transistor P-Channel RF Amplifier mw RADIO RECEIVER IC SWITCHING TRANSISTOR 144 1037 fm receiver ic 4w TRANSISTOR BTL POWER AMPLIFIER IC 740 SA626 satellite UHF transceiver transistor for RF amplifier and mixer datasheet abstract |
|
|||
| Abstract: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES , VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBTH10 MMBTH10 , Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification MMBTH10 MMBTH10 TYPICAL , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMBTH10 MMBTH10 , 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device ... | Original |
3 pages, |
sot23 marking code br marking code SS* SOT23 transistor MMBTH10 marking code PC sot-23 TRANSISTOR K 135 J 50 marking pc sot-23 transistor transistor code PB TRANSISTOR K 135 SOT-23 transistor code PB transistor marking code SOT-23 transistor marking 3em datasheet abstract |
|
|||
| Abstract: Motion Sensors 3 Motion Sensors 3.1 Functional Description The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 (KMY 10) or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded emitter transistor) is used. The oscillator produces a microwave radiation, which is , frequency (fO = 2.45 GHz) the sensor module KMY 24 can be registered for approval worldwide. 3.2 ... | Original |
1 pages, |
doppler motion sensor 24 GHz Microwave Sensor microwave transistor siemens doppler radar circuit for speed sensing motion microwave DOPPLER motion sensors microwave sensor motion sensor doppler effect microwave doppler sensor microwave distance sensors automatic door opening sensor datasheet abstract |
|
|||
| Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , to 120s 1 to 5 deg./s 230 deg., 20 to 30s 245 to 260 deg., 10s Max. 60s Min. 2 times Max. [deg. , Rate 2.Pre Liminary Heating Time " Recommended peak temperature is over 245 degree. If peak ... | OCR Scan |
5 pages, |
ST-100S EMT3F 750H 2SB1051K UMT3F TUMT6 PSOP datasheet abstract |
|
|||
| Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , to 120s 1 to 5 deg./s 230 deg., 20 to 30s 245 to 260 deg., 10s Max. 60s Min. 2 times Max. [deg. , Rate 2.Pre Liminary Heating Time " Recommended peak temperature is over 245 degree. If peak ... | OCR Scan |
5 pages, |
ST-100S asahiglass 750H 2SB1051K PSOP datasheet abstract |
|
|||
| Abstract: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2- JANUARY 1995 _ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX1053A ZTX1053A UNIT Collector-Base Voltage vCBO 150 V Collector-Emitter Voltage vCEO 75 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current [CM 10 A Continuous Collector Current "c 3 A Base , 150 245 V IC"100(iA Collector-Emitter Breakdown Voltage Vces 150 245 V Ic-IOOfiA Collector-Emitter Breakdown Voitage VqeO 75 100 V lc=10mA Collector-Emitter Breakdown Voltage VCEV 150 245 V lc-100pA,VEB»1V ... | OCR Scan |
2 pages, |
ZTX1053A ZTX1053A abstract |
|
|||
| Abstract: nach kundenspezifischen Vorgaben dissipateur enfichable universel pour boîtiers de transistor TO , 16 0,6 9 FK 245 MI 247 O 9 8,5 16 0,6 0,6 27 20,5 K/W mit Lötfahne für , Material: Kupfer (Cu), 0,6 mm dick Oberfläche: lötfähig C 20 1 9 8,5 0,6 4 FK 245 MI 247 V 1 16 FK 245 MI 247 H 20 1,2 Transistorhaltefedern Strangkühlkörper mit ... | Original |
1 pages, |
MULTIWATT die datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| BF245A-B-C_2 Product information page BF245A; BF245B; BF245C; N-channel silicon field-effect transistors General info General purpose N -V(P)GS(V) V DS max(V) Y FS (ms) BF245A N-channel junction field-effect transistors 1 30 3 to 6.5 BF245C N-channel junction field-effect transistors 1.1 12 to 25 10 DC 245A; BF245B; BF245C N-channel silicon field-effect transistors 30-jul-96 Product www.datasheetarchive.com/files/philips/pip/bf245a-b-c_2.html |
Philips | 23/04/2003 | 5.13 Kb | HTML | bf245a-b-c_2.html |
| Product listing BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor BLF175 BLF175 BLF175 BLF175 - HF/VHF power MOS transistor BLF177 BLF177 BLF177 BLF177 - HF/VHF power MOS transistor BLF177 BLF177 BLF177 BLF177 - HF/VHF power MOS transistor BLF202 BLF202 BLF202 BLF202 - HF/VHF power MOS transistor BLF242 BLF242 BLF242 BLF242 - HF/VHF power MOS transistor BLF244 BLF244 BLF244 BLF244 - VHF power MOS transistor BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor BLF246 BLF246 BLF246 BLF246 - VHF www.datasheetarchive.com/files/philips/catalog/listing/41156-v1.html |
Philips | 17/02/2002 | 5.47 Kb | HTML | 41156-v1.html |
| BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor Product name PIP BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor BLF175 BLF175 BLF175 BLF175 - HF/VHF power MOS transistor BLF177 BLF177 BLF177 BLF177 - HF/VHF power MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/41156.html |
Philips | 25/04/2003 | 6.41 Kb | HTML | 41156.html |
| BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor Product name PIP BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor BLF175 BLF175 BLF175 BLF175 - HF-VHF power MOS transistor BLF177 BLF177 BLF177 BLF177 - HF/VHF power MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/41156-v2.html |
Philips | 01/06/2005 | 6.26 Kb | HTML | 41156-v2.html |
| BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor Product name PIP BLF1043 BLF1043 BLF1043 BLF1043 - UHF power LDMOS transistor BLF145 BLF145 BLF145 BLF145 - HF power MOS transistor BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/41139.html |
Philips | 25/04/2003 | 14.34 Kb | HTML | 41139.html |
| BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor Product name PIP BLF1043 BLF1043 BLF1043 BLF1043 - UHF power LDMOS transistor BLF145 BLF145 BLF145 BLF145 - HF power MOS transistor BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/41139-v2.html |
Philips | 01/06/2005 | 12.98 Kb | HTML | 41139-v2.html |
| transistor BLF244 BLF244 BLF244 BLF244 - VHF power MOS transistor BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor BLF246 BLF246 BLF246 BLF246 - VHF power MOS transistor Product listing BLF1043 BLF1043 BLF1043 BLF1043 - UHF power LDMOS transistor BLF145 BLF145 BLF145 BLF145 - HF power MOS transistor BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor BLF175 BLF175 BLF175 BLF175 - HF/VHF power MOS transistor BLF177 BLF177 BLF177 BLF177 - HF/VHF power MOS transistor BLF177 BLF177 BLF177 BLF177 - HF/VHF power www.datasheetarchive.com/files/philips/catalog/listing/41139-v1.html |
Philips | 17/02/2002 | 10.14 Kb | HTML | 41139-v1.html |
| BF245A - N-channel silicon field-effect transistors BF245B - N-channel silicon field-effect transistors BF245C - N-channel silicon field-effect transistors BF510 BF510 BF510 BF510 - N-channel silicon field-effect transistors Product listing for N-channel junction field-effect transistors www.datasheetarchive.com/files/philips/catalog/listing/15491-v2.html |
Philips | 01/06/2005 | 9.98 Kb | HTML | 15491-v2.html |
| BF245A - N-channel silicon field-effect transistors BF245B - N-channel silicon field-effect transistors BF245C - N-channel silicon field-effect transistors BF510 BF510 BF510 BF510 - N-channel silicon field-effect transistors Product listing for N-channel junction field-effect transistors www.datasheetarchive.com/files/philips/catalog/listing/15491.html |
Philips | 25/04/2003 | 9.89 Kb | HTML | 15491.html |
| BLF245 - VHF power MOS transistor BLF245B - VHF push-pull power MOS transistor Product listing for Broadcast Transistors Products listing Product name PIP BLF145 BLF145 BLF145 BLF145 - HF power MOS transistor BLF147 BLF147 BLF147 BLF147 - VHF power MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/42808.html |
Philips | 25/04/2003 | 10.98 Kb | HTML | 42808.html |