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BQ24314CEVM-245 Texas Instruments BQ24314CEVM-245 Evaluation Module visit Texas Instruments
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments

245 transistor

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power amplifier circuit diagram with pcb layout

Abstract: PH ON 4307 APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT · Description of the product , amplifier for a 2.45 GHz WLAN. · Main results At a frequency of 2.45 GHz, a supply voltage of 3.0 V, and a , Semiconductors Application information 2.45 GHz power amplifier with the BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W, it is possible to design Power Amplifiers (PAs
Philips Semiconductors
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BFG400 power amplifier circuit diagram with pcb layout PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier amplifier TRANSISTOR 12 GHZ Um 3562 MGS765 MGS766

diode t85

Abstract: 2N7805 DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER , area call TOLL FREE 800-526-4581 DIODE TRANSISTOR CO INC H? TRANSISTOR OUTLINES DE I 2040355 â , .750 T72h .220 1.055 .520 .080 ,365 .004 .245 .710 .100 8-32N03A 45" .230 1.065 .540 .100 .385 , 1.055 ,520 .073 .365 .005 ,245 .710 .100 8-32UNC-2A 46" .230 1.065 ,530 .077 .385 .275 .760 .130 , 800-526-4581 I . 2B48352 DIODE TRANSISTOR CO DIODE TRANSISTOR CO INC TNr. 21C 00095 orfSfl-ÃI ~57 ]>F1
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2N2144A 2N277 2N2152 2N1073 2N1100 2N2157 diode t85 2N7805 trf 510 transistor 32N03 t85 diode 2N58A 2N629 2N5436 2N143/13

PSOP

Abstract: asahiglass Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , MOUNTED DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , 120s 1 to 5 deg./s 230 deg., 20 to 30s 245 to 260 deg., 10s Max. 60s Min. 2 times Max. [deg.] 250 , 2.Pre Liminary Heating Time " Recommended peak temperature is over 245 degree. If peak temperature
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PSOP asahiglass vmn3 package pine alpha st-100s arakawa chemical 2SB1051K 750H

PSOP

Abstract: UMT3F Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , MOUNTED DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , 120s 1 to 5 deg./s 230 deg., 20 to 30s 245 to 260 deg., 10s Max. 60s Min. 2 times Max. [deg.] 250 , 2.Pre Liminary Heating Time " Recommended peak temperature is over 245 degree. If peak temperature
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UMT3F TUMT6 VMN3 TUMT3 ST-100S EMT3F
Abstract: Werte von ID und Fds erlaubt, wenn der Transistor dabei thermisch nicht überlastet wird. Die ßosionfG , allowed within this operating area if the transistor is not thermally overloaded as a result. The Æ D S (o , rated reverse voltage of the transistor; its slope is flatter for 50 V types than for 1000 V types and , Abhängigkeit von der Gehäusetemperatur Tc bzw. Umgebungs temperatur r A bei durchgeschaltetem Transistor, d.h , transistor, i.e. at 4.13 Avalanche Energy E * = f(T) Das Diagramm zeigt den Verlauf der maximalen -
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C/100
Abstract: conditions T a b le 3 . Iron Soldering Iron Tem perature M etal case < 245°C < 245°C 245 to 350°C Plastic case 23 A 3 D IN 4I869 (SO T 23) < 245°C < 245°C < 250°C Soldering D istance from the Case 1.5 to , 5 s 10 s 5 s 3s 5 s 10s 245 to 300°C < 245°C 245 to 300°C < 250°C > 5 mm > 2 mm > 5 mm - Soldering T em perature < 245°C Soldering D istance from the Case > 1.5 mm M ax. A llow able S ol , calculated from I a { mm ) Figure 33. Example For a silicon pow er transistor with Tjmax = 150°C and -
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245 transistor

Abstract: SOT539 ISM 2.45 GHz LDMOS RF power transistor portfolio RF power as a robust and highly efficient energy source With nearly a decade of leadership expertise in the industrial, scientific and medical (ISM) market, NXP has now created the industry's first dedicated and complete RF power transistor portfolio for the 2.45 GHz ISM band. The ISM 2.45 GHz LDMOS power transistor portfolio meets the need for , 12 15 Test signal CW CW CW CW Package SOT975 SOT502 SOT539 SOT539 2.45 GHz industrial
NXP Semiconductors
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245 transistor SOT539 SOT502 RF based industrial RF Transistor Selection BLF25M612 BLF2425M7L BLF2425M6L

PTB20050

Abstract: 245 transistor ERICSSON S PTB 20050 2 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20050 is a class A, NPN, common emitter RF Power Transistor intended for 24.5 VDC operation across the , R F SPECIFICATIONS (100 % Tested) Characteristics Gain (VOE= 24.5 V, Pout = 1W , Icq = 270mA F , = 24.5 V, Icq = 270mA F= 1.501 GHz) P-1dB 2.0 - W Input Return Loss (Vce= 24.5 V, Pout = 1 W , Icq = 270mA F= 1.501 GHz) Rtn Loss 12 - - dB Collector Efficiency (V ce= 24.5 V, Pout
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PTB20050 181Z 5 GHZ TRANSISTOR 1W

transistor C 245 b

Abstract: TRANSISTOR BI 185 Bestelibezeiofanung fiir eiaen Transistor des Eyps S f l 2 4 5 1 Transistor SFE 245 TQL 38 464 Inderungen vorbehalten! 3 B PE 245 E3902A0 10° 10' 10? il- È k . - Iß 140/2/81 III/18/397 , Vorläufige technische Daten SF£ 245 SUizium-npn-Spitaxie-Planar-Traxusisfeor im , h r e n w e r k "anna seghers" n e u h a u s im veb kombinat m ik r o e le k tr o n ik 8F£ 245 , % f s 36 Mz 2 SFE 245 la zol&ssigan Arbeifcsbareioh darf die Yerluetleistung» iabagrierè
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transistor C 245 b TRANSISTOR BI 185 SF245 VEB Kombinat Scans-048 transistor AE

AWL9924

Abstract: AWL9924RS34P0 GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the
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AWL9924 AWL9924RS34Q1 AWL9924RS34P0 AWL9924RS34P6 EVA9924RS34P9

50 5G

Abstract: ghz detector GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias , inside the 5 GHz PA. 9 VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 , 20 GND 21 VCC3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 VCC2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA
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50 5G ghz detector s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AWL9924RS34P8

AWL9924

Abstract: AWL9924RS34P0 transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23
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802.11b TI EVA9924RS34

AWL9924

Abstract: AWL9924RS34P0 transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 V B C 2G 2 GHz
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Abstract: power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias Circuit Voltage. Supply , VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 VCC2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 VBC 2G 2 GHz Anadigics
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AWL9924RS34P0

Abstract: AWL9924RS34P6 transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 V
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AWL9924

Abstract: AWL9924RS34P0 GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the
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Abstract: power transistor of stage 1 of the 5 GHz PA. 5 GHz Bias Circuit Voltage. Supply voltage and current is , for power transistor of stage 2 of the 5 GHz PA. 5 GHz Supply Voltage. Bias for power transistor of , transistor of stage 3 of the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 , to the bias circuits inside the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 1 , 2.45 GHz Gain 2.50 GHz Figure 3: ICC and EVM vs. Output Power Across Frequency (VCC = +3.3 V, TC = Anadigics
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2sc5083

Abstract: pine alpha st-100s arakawa chemical Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF , TYPE TRANSISTOR TRANSISTOR | CONDITION OF SOLDERING DIP AND HAND SOLDERING (CONDITION OF SOLDERING DIP Soldering Temperature : 245 to 265 deg. Soldering Time : 10s Max. [deg. 300 250 0 , Soldering 265 deg. Cooling ( in air) _ / \ / 245 deg. 130 deg J ^ 100 deg. more than 2min.
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2SC4010 2SC1740S 2SC1809S 2SC2058S 2SC2926S 2SC4043S 2sc5083 2SC4044S 2SC401 ROHM FTL 2SC5083

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: NE68839 SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS , OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN , Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply , (Class AB) Duty 1/8 dBm dB % MS 6.5 50 UNITS A A 30 24.5 8 62 10.0 MIN NE68939 39 TYP MAX 2.5 2.5 C , DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB C IC GL 24.5 62 15 9.0 dbm % mA db IMPEDANCE
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NE68839 PC2771T RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 2.tx transistor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ SC-61 NE68939-T1-A NE69039
Abstract: voltage operation and consists of a voltage reference, an error amplifier, a driver transistor, a current , NAME FUNCTION VBIAS Power Supply Input 4 VIN Driver Transistor Input 5 VOUT , . 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 , 87 57 92 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 , 2.65 2.60 2.55 2.50 2.45 2.40 30 31 31 32 300 250 200 150 100 50 49 32 50 Torex Semiconductor
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XC6601 ETR0335
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