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2N3810L Microsemi Corporation Transistor visit Digikey
2N2904AL Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey
SRF4427G Microsemi Corporation Transistor visit Digikey
2N2907AUA Microsemi Corporation Transistor visit Digikey

245+transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Philips double polysilicon wideband transistor BFG480W, it is possible to design Power Amplifiers (PAs , a single supply voltage of 3.0 V. It consists of the BFG480W wideband transistor, operating in , with an NPN transistor BC817. The BFG480W has two emitter-leads which have to be carefully grounded to , SIZE, MANUFACTURER PURPOSE, COMMENT TR1 BFG480W SOT343R Philips RF transistor TR2 BC817 SOT23 Philips NPN bias transistor R1 680 0.4 W metal film resistor R2 10 Philips Semiconductors
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BFG400 2.45 Ghz power amplifier 45 dbm PH ON 4307 2.45 Ghz power amplifier amplifier TRANSISTOR 12 GHZ Um 3562 2.45 Ghz power amplifier 30 db MGS765 MGS766
Abstract: DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER , area call TOLL FREE 800-526-4581 DIODE TRANSISTOR CO INC H? TRANSISTOR OUTLINES DE I 2040355 â , 800-526-4581 I . 2B48352 DIODE TRANSISTOR CO DIODE TRANSISTOR CO INC TNr. 21C 00095 orfSfl-ÃI ~57 ]>F1 £040352 OOGODIS â¡ TRANSISTOR OUTLINES T064 i 1. The outline contour with exception of , â'¢ Outside NY & NJ area call TOLL FREE 800-526-4581 IA 2848352 DIODE TRANSISTOR CO INC DIODE -
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2N2144A 2N630 2N277 2N2152 2N1073 2N1100 diode t85 2N7805 trf 510 transistor t85 diode 32N03 2N58A 2N629 2N5436 2N143/13
Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , MOUNTED DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , Electronics RECOMMENDABLE CONDITION OF SOLDERING SURFACE MOUNTED DEVICE TRANSISTOR I CONDITION OF HEAT - , RECOMMENDABLE CONDITION OF SOLDERING REFERENCE COPPER PLATE AREA DIMENSION ON PRINTED CIRCUIT BOARD TRANSISTOR -
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PSOP 2SB1051K 750H asahiglass pine alpha st-100s arakawa chemical ST-100S
Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE (DISCRETE TRANSISTOR) LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS , MOUNTED DEVICE TRANSISTOR | RECOMMENDABLE CONDITION OF REFLOW , FLOW AND HAND SOLDERING IRECOMMENDABLE , Electronics RECOMMENDABLE CONDITION OF SOLDERING SURFACE MOUNTED DEVICE TRANSISTOR I CONDITION OF HEAT - , RECOMMENDABLE CONDITION OF SOLDERING REFERENCE COPPER PLATE AREA DIMENSION ON PRINTED CIRCUIT BOARD TRANSISTOR -
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TUMT6 UMT3F EMT3F TUMT3 VMN3
Abstract: Werte von ID und Fds erlaubt, wenn der Transistor dabei thermisch nicht überlastet wird. Die ßosionfG , allowed within this operating area if the transistor is not thermally overloaded as a result. The Æ D S (o , rated reverse voltage of the transistor; its slope is flatter for 50 V types than for 1000 V types and , Abhängigkeit von der Gehäusetemperatur Tc bzw. Umgebungs temperatur r A bei durchgeschaltetem Transistor, d.h , transistor, i.e. at 4.13 Avalanche Energy E * = f(T) Das Diagramm zeigt den Verlauf der maximalen -
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C/100
Abstract: calculated from I a { mm ) Figure 33. Example For a silicon pow er transistor with Tjmax = 150°C and , transistor sw itches on when the collector voltage is sm aller than V c e OThere is no danger for the transistor because the sw itch-on tim e is very short. F or this operation, the lim itation o f the SOA for t, = 1 us and ^ < -¡-¡L is valid. b ) The transistor sw itches on when the inductance in the collector circuit is not yet unloaded and the flyback voltage V et; ¡s higher than V ceo ° f the transistor -
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Abstract: ISM 2.45 GHz LDMOS RF power transistor portfolio RF power as a robust and highly efficient energy source With nearly a decade of leadership expertise in the industrial, scientific and medical (ISM) market, NXP has now created the industry's first dedicated and complete RF power transistor portfolio for the 2.45 GHz ISM band. The ISM 2.45 GHz LDMOS power transistor portfolio meets the need for improved efficiency made possible by the latest LDMOS technology generations. The portfolio has three NXP Semiconductors
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245 transistor RF based industrial RF Transistor Selection SOT502 SOT539 BLF25M612 BLF2425M7L BLF2425M6L
Abstract: ERICSSON S PTB 20050 2 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20050 is a class A, NPN, common emitter RF Power Transistor intended for 24.5 VDC operation across the 14651513 MHz frequency band. It is rated at 2 Watts minimum output power and may be used for both CW and PEP applica tions. Ion implantation, nitride surface passivation and gold metalization are used to ensure excellent device uniformity, ruggedness and reliability. 100% Lot Traceability is Stan dard -
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181Z 5 GHZ TRANSISTOR 1W PTB20050
Abstract: Bestelibezeiofanung fiir eiaen Transistor des Eyps S f l 2 4 5 1 Transistor SFE 245 TQL 38 464 Inderungen -
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transistor C 245 b TRANSISTOR BI 185 SF245 VEB Kombinat DSAGER00063 Scans-048 E3902A0 III/18/397
Abstract: GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the Anadigics
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AWL9924 AWL9924RS34Q1 AWL9924RS34P0 AWL9924RS34P6 EVA9924RS34P9
Abstract: GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias , inside the 5 GHz PA. 9 VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 , 20 GND 21 VCC3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 VCC2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA Anadigics
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50 5G ghz detector s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AWL9924RS34P8
Abstract: transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 Anadigics
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802.11b TI EVA9924RS34
Abstract: transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 V B C 2G 2 GHz Anadigics
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Abstract: power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias Circuit Voltage. Supply , VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 VCC2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 VBC 2G 2 GHz Anadigics
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Abstract: transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 GHz PA. 23 V Anadigics
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Abstract: GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the Anadigics
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Abstract: power transistor of stage 1 of the 5 GHz PA. 5 GHz Bias Circuit Voltage. Supply voltage and current is , for power transistor of stage 2 of the 5 GHz PA. 5 GHz Supply Voltage. Bias for power transistor of , transistor of stage 3 of the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 , to the bias circuits inside the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 1 Anadigics
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Abstract: Ir Excellence in Electronics RECOMMENDABLE CONDITION OF SOLDERING TRANSISTOR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF SOLDERING DIP 2 / 3 RECOMMENDABLE CONDITION OF HAND SOLDERING 2 / 3 CONDITION OF HEAT-RESISTANT 2 / 3 , TYPE TRANSISTOR TRANSISTOR | CONDITION OF SOLDERING DIP AND HAND SOLDERING (CONDITION OF SOLDERING , RECOMMENDABLE CONDITION OF SOLDERING LEAD TYPE TRANSISTOR TRANSISTOR | TOLERANCE RANGE FOR HEATPROOF OF -
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2SC4010 2SC1740S 2SC1809S 2SC2058S 2SC2926S 2SC4043S 2sc5083 2SC4044S ROHM FTL 2SC5083
Abstract: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 3 1.9 · OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN MINI MOLD PACKAGE: NE68939 2.9 ± 0.2 0.95 0.85 2 The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply -
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NE68839 PC2771T RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 2.tx transistor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ SC-61 NE68939-T1-A NE69039
Abstract: voltage operation and consists of a voltage reference, an error amplifier, a driver transistor, a current , NAME FUNCTION VBIAS Power Supply Input 4 VIN Driver Transistor Input 5 VOUT , 48 31 49 32 49 *1): Vgs is a Gate â'"Source voltage of the driver transistor that is , voltage of the driver transistor that is defined as the value of VBIAS - VOUT VBIAS =5.0(V) 4.10 , 145 97 148 98 151 *1): Vgs is a Gate â'"Source voltage of the driver transistor that is Torex Semiconductor
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XC6601 ETR0335
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