NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SPRRGUE INTERFACE INTEGRATED CIRCUITS TYPE ULN-2300M AMPLIFIER SCR FIRING CIRCUIT TYPE ULN-2301M ULN-2301M AMPLIFIER-DETECTOR CIRCUIT Drive SCRs directly from the detector output of the ULN-2301M ULN-2301M. Or use the ULN-2300M, complete with a 60 V SCR right on the same chip. Both feature high input impedance, 12 V Zener diode , *.3 A (lOftf duration) SCR Steady State Current*. 250 mA "ULN-2300M only SCR GATE I SCR CATHODE OR GND SCR ANODE ULN-2300M |j] ncn-inv. input 7 I inv. input 6 i amplifier ... | OCR Scan |
1 pages, |
SCR, ttl equivalent uln series UDN-2842B SCR gate Control IC UDN 2843B 2845b Darlington pair IC single 2841B SCR 6 pulse Gate Drive UDN-2843B ULN 8 DIP UDN-2844B SCR 70A ULN-2300M ULN-2301M ULN-2300M abstract |
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| Abstract: 47-2005 Temperature Operating Up to 2300m (7500ft) -25°C to +70°C, derated 1.1°C per 300m over 2300m Non-operating Shock -40°C to +85°C Operating 40G, half sine shock pulse, 11ms , Non-Operating/Storage Altitude 5% to 95% non-condensing Operating To 15,000ft (4570m) Up to 2300m ... | Original |
6 pages, |
ICP722 ICH9M GS45 DDR3 socket datasheet 1B31 SU9300 sL9400 HUmiseal 1B31 datasheet abstract |
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| Abstract: defined in the ANSI/VITA 47-2005 Class ECC1 as defined in the ANSI/VITA 47-2005 Up to 2300m (7500ft) -25°C to +70°C, derated 1.1°C per 300m over 2300m -40°C to +85°C 40G, half sine shock pulse, 11ms duration , non-condensing To 15,000ft (4570m) Up to 2300m (7500 ft), -25°C to +70°C Derated -1.1 C per 305 m (1000 ft) above ... | Original |
3 pages, |
datasheet abstract |
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| Abstract: 2SC5610 2SC5610 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 1.200p NF 1 IKF 3.5 NE 2 NR 1 2.4 IKR NC 2 IRB 200.0m RE 23.00m XTB 1.3 XTI 3 VJE 600.0m TF 400p VTF 10 PTF 0 VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter BF VAF ISE BR VAR ISC RB RBM RC EG CJE MJE XTF ITF CJC MJC TR KF Value 210 8 1.000p 80 30 800.0p 470.0m 16.00m 17.00m 1.11 ... | Original |
1 pages, |
2SC5610 2SC5610 abstract |
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| Abstract: 15C02MH 15C02MH SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 130.0f NF 1 IKF 230.0m NE 2 NR 1 235.0m IKR NC 2 IRB 30.00m RE 92.00m XTB 1.5 XTI 3 VJE 660.0m TF 300p VTF 5 PTF 0 VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter BF VAF ISE BR VAR ISC RB RBM RC EG CJE MJE XTF ITF CJC MJC TR KF Value 600 3.7 30.00f 160 25 100.0f 4.9 76.30m 165.0m 1.11 ... | Original |
1 pages, |
15C02MH 15C02MH abstract |
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| Abstract: 2SA2179 2SA2179 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 1.700p NF 1 IKF 5 NE 2 NR 1 IKR 1.4 NC 2 IRB 2.000m RE 23.00m XTB 1.3 XTI 3 VJE 750.0m TF 900p VTF 10 PTF 117.3 VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter BF VAF ISE BR VAR ISC RB RBM RC EG CJE MJE XTF ITF CJC MJC TR KF Value 260 11 18.00p 95 15 260.0p 2.4 5.730m 5.000m 1.11 ... | Original |
1 pages, |
2SA2179 f 1010N 2SA2179 abstract |
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| Abstract: 2SC3253 2SC3253 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 3.5 NE 2 NR 1 IKR 590.0m NC 2 IRB 100.0m RE 23.00m XTB 1.3 XTI 3 VJE 710.0m TF 1.2n VTF 1.000K PTF 0 VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter BF VAF ISE BR VAR ISC RB RBM RC EG CJE MJE XTF ITF CJC MJC TR KF Value 146 13 195.0p 25 50 800.0p 200.0m 220.0m 7.000m ... | Original |
1 pages, |
2SC3253 2SC3253 abstract |
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| Abstract: 2SC3746 2SC3746 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 3.5 NE 2 NR 1 IKR 590.0m NC 2 IRB 100.0m RE 23.00m XTB 1.3 XTI 3 VJE 710.0m TF 1.2n VTF 1.000K PTF 0 VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter BF VAF ISE BR VAR ISC RB RBM RC EG CJE MJE XTF ITF CJC MJC TR KF Value 146 13 195.0p 25 50 800.0p 200.0m 220.0m 7.000m ... | Original |
1 pages, |
2sc3746 2SC3746 2SC3746 abstract |
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| Abstract: , derated 1.1°C per 305m over 2300m Non-operating Relative Humidity -40°C to 85°C Operating 5% , -1.1°C per 305m over 2300m Non-operating Relative Humidity 40°C to 85°C, up to 12000m , Altitude 5% to 95% non-condensing Operating To 15,000ft (4570m) Up to 2300m (7500 ft), 0 to 60C ... | Original |
7 pages, |
Z530P 1B31 z520 IEC60950-1 lcd inverter board schematic US15W Power supply ATX 350W processor atom CEZ5XL 1366x768 schematic circuit for computer ssd disk US15WPT Z520PT usb to sata cable schematic datasheet abstract |
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| Abstract: i7-620UE Temperature Operating Up to 2300m (7500ft) -25°C to +70°C, derated 1.1°C per 300m over 2300m , (4570m) Up to 2300m (7500 ft), -25°C to +70°C Derated -1.1 C per 305 m (1000 ft) above 2300 m (7500 ... | Original |
6 pages, |
1B31 204-pins DDR3 SOCKET 610E i7 processor intel i5 intel i7 QM57 WPCT2 LPC TPM lvds to eDP WPCT WPCT210 HUmiseal 1B31 CEQM57XT CEQM57XT CEGM57XT CEQM57XT abstract |
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| Abstract: MLCC Capacitors ® High Voltage and TANCERAM® (Cont.) Size Code Type 1206 X5R X5R 1210 Y5V 1812 X5R WV DC Capacitance 6.3 10uF 10 3.3uF 10 4.7uF 16 4.7uF 6.3 22uF 6.3 100uF 16 10uF 25 4.7uF 25 10uF 10 22uF 6.3 100uF 16 22uF Capacitance Tolerance ±10% ±10% ±10% ±20% ±20% ±20% ±10% ±10% ±10% +80~20% ±20% ±20% Dim. T (mm) 1.27 1.27 1.27 1.27 1.65 1.65 1.65 1.65 1.65 1.65 2.80 2.80 Digi-Key ... | Original |
3 pages, |
250R05L120GV4T 250R05L470JV4T 251R14S1R5BV4T 500R07S0R3AV4 302R29W102KV4E 251R15S8R2CV4E 712-1376-2-ND 500R07S1R8BV4 500R07S2R2BV4T 709-1092-2-ND 251R14S200GV4T 250R05L270GV4T 250R05L1R5BV4T datasheet abstract |
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| Abstract: to 2300m (7500 ft) -25°C to +70°C, derated 1.1°C per 305m (1000 ft) above 2300 m (7500 ft , non-condensing Operating To 15,000ft (4570m) Up to 2300m (7500 ft), -25°C to +70°C Derated -1.1 C per ... | Original |
5 pages, |
US15W IEC60950-1 HUmiseal 60Ghz 1B31 microSD socket type 1b31 microSD PINOUT Humiseal 1B31 datasheet abstract |
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| Abstract: Aug. 2004 Cell Type UR18650F UR18650F Specifications Nominal Capacity Nominal Voltage Min.2300m Ah 3.7V Constant Current -Constant Voltage 4.2V Std. 2300mA 2.5hrs. 0 +40 -20 +60 -20 +50 44.5g Charging Method Charging Voltage Charging Current Charging Time Ambient Temperature Charge Discharge Storage Weight (Max.) (D) Dimensions(Typ.) of Bare Cell H 64.7 mm D 18.05 mm d 9.0 mm Discharge rate characteristics Discharge temperature characteristics ... | Original |
1 pages, |
UR18650 cccv 4.2V CV 2 UR18650F UR18650F abstract |
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| Abstract: Sight & Sound of Information Figure 3 1VPP 1 2300m 2R2 (2 1) C1R1 R1 C1R2300kHz1VPP ... | Original |
2 pages, |
LMH6643 ACLMH6643 ACLMH6643 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| * SANYO 12A02CH 12A02CH 12A02CH 12A02CH SPICE PARAMETER * .LIB 12A02CH 12A02CH 12A02CH 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH 12A02CH 12A02CH 12A02CH PNP ( IS = 110.0f BF = 440.0 +NF = 1.0 www.datasheetarchive.com/files/on_semiconductor/simulation-models/12a02ch-spice-d.txt |
On Semiconductor | 22/05/2012 | 1.95 Kb | TXT | 12a02ch-spice-d.txt |
| 2SC5347A 2SC5347A 2SC5347A 2SC5347A model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 1.750f A TF 17.5p S BF 114 XTF 1.300m NF 1.001 VTF 800.0m V VAF 18 V ITF 20.80ｍ A IKF 1.5 A PTF 25.7 deg ISE 0.40f A CJC 2.20p F NE 1.75 VJC 80.0m V BR 15 MJC 380.8m NR 1.15 XCJC 1.510m VAR 20 V TR 1.780n S IKR 50.00m A FC 10.51ｍ ISC 70.00f A NC 1.13 RB 1.3 ohm IRB 300.0m A Lb 1.600n H RBM 300.0m ohm Lc 150.0p H RE 230.0m ohm Le 1.700n H RC 1.4 ohm Cbc 380.0f F XTB 0 Cbe 130.0f F EG 1.11 eV Cce 340.0f F XTI 3 www.datasheetarchive.com/download/16164059-601802ZC/2sc5347spice-d.zip (2SC5347A_01.pdf) |
On Semiconductor | 23/05/2012 | 72.86 Kb | ZIP | 2sc5347spice-d.zip |
| CPH6003A CPH6003A CPH6003A CPH6003A model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 1.750f A TF 17.50ｐ S BF 114 XTF 1.30ｍ NF 1.001 VTF 800.0ｍ V VAF 18 V ITF 20.80ｍ A IKF 1.5 A PTF 25.7 deg ISE 0.40f A CJC 2.20p F NE 1.75 VJC 80.0m V BR 15 MJC 380.8ｍ NR 1.15 XCJC 1.510ｍ VAR 20 V TR 1.78ｎ S IKR 50.0m A FC 10.51ｍ ISC 70.0f A NC 1.13 RB 1.3 ohm IRB 300.0m A Lb 960.0p H RBM 300.0m ohm Lc 220.0p H RE 230.0m ohm Le 960.0p H RC 1.4 ohm Cbc 220.0f F XTB 0 Cbe 110.0f F EG 1.11 eV Cce 220.0f F XTI 3 CJE 2.60p F VJE www.datasheetarchive.com/download/7016927-602400ZC/cph6003aspice-d.zip (CPH6003A_01.pdf) |
On Semiconductor | 23/05/2012 | 70.61 Kb | ZIP | cph6003aspice-d.zip |
| * SANYO 15C02MH 15C02MH 15C02MH 15C02MH SPICE PARAMETER * .LIB 15C02MH 15C02MH 15C02MH 15C02MH * DATE : 2007/02/15 * Temp = 27 deg .MODEL 15C02MH 15C02MH 15C02MH 15C02MH npn ( IS = 130.0f BF = 600 +NF = 1 www.datasheetarchive.com/files/on_semiconductor/simulation-models/15c02mh-spice-d.txt |
On Semiconductor | 22/05/2012 | 1.95 Kb | TXT | 15c02mh-spice-d.txt |
| LINK PS "Parameter Set" { data { PSTABLE "Parameter Table" { param LE " 1.700n" param LB " 1.600n" param LC " 150.0p" param Cbe " 130.0f" param Cbc " 380.0f" param Cce " 340.0f" param Q1.AREA " 1.100 " param NPN.IS " 1.750f" param NPN.BF " 114.0 " param NPN.NF " 1.001 " param NPN.VAF " 18.00 " param NPN.IKF " 1.500 " param NPN.ISE " 400.0a" param NPN.NE " 1.750 " param NPN.BR " 15.00 " param NPN.NR " 1.150 " param NPN.VAR " 20.00 " param NPN.IKR " 50.00m" param NPN.ISC " www.datasheetarchive.com/download/16164059-601802ZC/2sc5347spice-d.zip (2SC5347A_01.mps) |
On Semiconductor | 23/05/2012 | 72.86 Kb | ZIP | 2sc5347spice-d.zip |
| LINK PS "Parameter Set" { data { PSTABLE "Parameter Table" { param Q1.AREA " 1.000 " param NPN.IS " 38.78a" param NPN.BF " 107.6 " param NPN.NF " 1.002 " param NPN.VAF " 34.79 " param NPN.IKF " 199.6m" param NPN.ISE " 138.1f" param NPN.NE " 2.500 " param NPN.BR " 1.500 " param NPN.NR " 1.050 " param NPN.VAR " 200.0 " param NPN.IKR " 20.00m" param NPN.ISC " 0.000 " param NPN.NC " 2.000 " param NPN.RB " 8.500 " param NPN.IRB " 143.2u" param NPN.RBM " 1.584 " param NPN.RE " 1 www.datasheetarchive.com/download/83838749-603973ZC/mch4009spice-d.zip (MCH4009_01.mps) |
On Semiconductor | 23/05/2012 | 75.52 Kb | ZIP | mch4009spice-d.zip |
| MCH4009 MCH4009 MCH4009 MCH4009 model : Gummel-Poon Parameter Value Unit Parameter Value IS 38.78a A TF 5.398p BF 107.6 XTF 11.00f NF 1.002 VTF 81.1 VAF 34.79 V ITF 1.55 IKF 199.6m A PTF 32 ISE 138.1f A CJC 214.0f NE 2.5 VJC 111.7m BR 1.5 MJC 118.0m NR 1.05 XCJC 833.8m VAR 200 V TR 50.00p IKR 20.00m A FC 8.105m ISC 0 A CJS 123.2f NC 2 VJS 140.0f RB 8.5 ohm MJS 150 IRB 143.2u A Lwb 670P RBM 1.584 ohm Llb 0.75P RE 1.022 ohm Lwe 45.0P RC 3.675 ohm Lle 172.5P XTB 0 Lwc 327P EG 1.11 eV Llc 620P XTI 3 Cec1 14 www.datasheetarchive.com/download/83838749-603973ZC/mch4009spice-d.zip (MCH4009_01.pdf) |
On Semiconductor | 23/05/2012 | 75.52 Kb | ZIP | mch4009spice-d.zip |
| LINK PS "Parameter Set" { data { PSTABLE "Parameter Table" { param LE " 960.0p" param LB " 960.0p" param LC " 220.0p" param Cbe " 110.0f" param Cbc " 220.0f" param CC " 220.0f" param Q1.AREA " 1.100 " param NPN.IS " 1.750f" param NPN.BF " 114.0 " param NPN.NF " 1.001 " param NPN.VAF " 18.00 " param NPN.IKF " 1.500 " param NPN.ISE " 400.0a" param NPN.NE " 1.750 " param NPN.BR " 15.00 " param NPN.NR " 1.150 " param NPN.VAR " 20.00 " param NPN.IKR " 50.00m" param NPN.ISC " 7 www.datasheetarchive.com/download/7016927-602400ZC/cph6003aspice-d.zip (CPH6003A_01.mps) |
On Semiconductor | 23/05/2012 | 70.61 Kb | ZIP | cph6003aspice-d.zip |
| | * | YOU ARE ONLY AUTHORIZED TO USE THIS SOFTWARE | ACCORDING TO LICENSOR'S LICENSE RESTRICTIONS. | * |* | [IBIS Ver] 3.1 [File Name] mc100lvep16d_25v.ibs [File Rev] 3 [Source] Measured and created by ICX Technology [Date] 10/27/2005 | |* [Copyright] | * www.datasheetarchive.com/files/on_semiconductor/simulation-models/mc100lvep16d_25v.ibs |
On Semiconductor | 30/03/2009 | 10.23 Kb | IBS | mc100lvep16d_25v.ibs |
| A trickle charge to the 2300mAh nickel-metal-hydride (NiMH) cells. To avoid exceeding this recommended rate www.datasheetarchive.com/files/maxim/0004/appno023.htm |
Maxim | 04/04/2001 | 7.4 Kb | HTM | appno023.htm |