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22uH

Catalog Datasheet MFG & Type PDF Document Tags

150UH

Abstract: C12-K7.5L - 1.2 C3-Z1.2R 1.2µH 90~450 0.33~0.85 0.55~1.05 C3-Z1.5R 2.2µH 90~800 0.25~0.80 0.30~1.00 1.8 C3-Z1.8R 2.2µH 85~1150 0.23~1.00 0.25~1.10 1.2 C3-Y1 , 1.8 C3-Y1.8R 1.2µH 68~820 0.30~1.80 0.30~1.90 2 C3-Y2.0R 2.2µH 47µH 70 , .5R 1µH 70~1170 0.38~2.60 0.42~1.75 C3-K1.5L 2.2µH 68µH 60~1050 0.14~0.85 0.26 , 1.5 3.0 3.0 CY Series 3.8 3.8 1.2 1.5 10µH 22µH 47µH 22µH 47µH 47µH
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150UH C12-K7.5L c5-k3la MITSUMI transformers #220 500 C6-K5LA C8-H3.5R C10-K3L C10-H3 C10-K4L C10-H5R C12-K4 C12-K7

47uH

Abstract: CBC3225T4R7M CBC3225T4R7MR CBC3225T100MR CBC3225T220MR CBC3225T470MR CBC3225T101MR 1.0µH +/-20% 2.2µH +/-20% 4.7µH +/-20% 10µH +/-20% 22µH +/-20% 47µH +/-20% 1.0µH +/-20% 2.2µH +/-20% 4.7µH +/-20% 10µH +/-20% 22µH +/-20% 47µH +/-20% 100µH +/-20% 1.0µH +/-20% 2.2µH +/-20% 4.7µH +/-20% 10µH +/-20% 22µH +/-20% 47µH +/-20% 100µH +/-20% 220µH +/-20% 470µH +/-20% 1.0µH +/-20% 2.2µH +/-20% 4.7µH +/-20% 10µH +/-20% 22µH +/-20% 47µH +/-20% 100µH +/-20% Maximum Rated Current (mA) 700mA 530mA 360mA
Taiyo Yuden
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CBC2012T1R0M CBC2012T2R2M CBC2012T4R7M CBC2012T100M CBC2012T220M CBC2012T470M 47uH CBC3225T4R7M 4.7uh cbc3225

MSPO8A

Abstract: IRLMS1503 Current XC9210B093K (300kHz, 3.3V) L:22µH CDRH125 Tr1:Pch MOSFET :CPH3308 VOUT:3.3V Tr2:Nch , Efficiency EFFI (%) CIN:47µF PWM GND PWM CE Tr1:CPH3308, Tr2:CPH3408 L=22uH(CDRH125), CL , ) Tr2 : CPH3408 (SANYO) L : 22µH CL : 16V, 47µF x 2 CIN : 16V, 47µF (SUMIDA CDRH125 , ) ] } x 100 3) Tr1 : CPH3308 (SANYO) Tr2 : CPH3408 (SANYO) L : 22µH CL : 16V, 47µF x 2 , (Pch MOSFET : IR) L: 22µH (SUMIDA CDRH125) CIN : 16V, 47µF (NICHICEMI Tantalum MCE
Torex Semiconductor
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XC9210 MSPO8A IRLMS1503
Abstract: XC9210B093, VOUT: 3.3V Efficiency vs. Output Current L:22µH CDRH125 Tr1:Pch MOSFET :CPH3308 , PWM Tr1:CPH3308, Tr2:CPH3408 L=22uH(CDRH125), CL=94uF(Tantalum) CL: 47µFX2 FB MODE , : 22µH (CDRH125, SUMIDA) CL: 16V, 47µF x 2 (Tantalum, MCE Series, NICHICHEMI) CIN: 16V, 47µF , ) Tr2: CPH3408 (SANYO) L: 22µH (CDRH125, SUMIDA) CL: 16V, 47µF x 2 (Tantalum, MCE Series, NICHICHEMI , EXT2 Other components L : 22µH CIN : 16V, 47µF CL : 16V, 47µF x 2 SD - P-ch MOSFET Torex Semiconductor
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DC000011

GLFR1608T1R0M-LR

Abstract: GLFR1608 22µH Inductance(µH) Inductance(µH) 22µH 10µH 4.7µH 2.2µH 1 1.0µH 10 10µH 4.7µH 2.2µH 1 1.0µH 0.1 0.1 1 10 0.1 100 1 10 IMPEDANCE vs. FREQUENCY , RATE 100000 0 Impedance() 10000 47µH 22µH 1000 10µH 4.7µH 2.2µH 1.0µH 100 Inductance decreasing rate(%) ­5 ­10 47µH ­15 22µH ­20 10µH ­25 4.7µH ­30 2.2µH
TDK
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GLFR1608 GLFR1608T1R0M-LR GLFR1608T2R2M-LR GLFR1608T100M-LR C/120 2002/95/EC GLFR1608T4R7M-LR

GLFR2012

Abstract: GLFR2012T100M-LR 10 100 0.1 1 10 1µH 6.8µH 47µH 1.5µH 10µH 68µH 2.2µH 15µH 100µH 3.3µH 22µH 4.7µH 33µH 100 1000 DC current(mA) Frequency (MHz) 1µH 6.8µH 47µH 1.5µH 10µH 68µH 2.2µH 15µH 100µH 3.3µH 22µH 4.7µH 33µH · All specifications are subject to , ) 1µH 6.8µH 47µH 1.5µH 10µH 68µH 2.2µH 15µH 100µH 100 1000 DC current(mA) 3.3µH 22µH 4.7µH 33µH 1µH 6.8µH 47µH 1.5µH 10µH 68µH 2.2µH 15µH 100µH 3.3µH 22µH
TDK
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GLFR2012 GLFR2012T100M-LR GLFR2012T1R0M-LR 100UH

GLF2012T

Abstract: GLF2012T470K CHARACTERISTICS INDUCTANCE vs. DC SUPERPOSITION CHARACTERISTICS 1000 1000 100 22µH Inductance(µH) Inductance(µH) 100 10µH 4.7µH 10 2.2µH 22µH 10µH 4.7µH 10 2.2µH 1µH 1µH 1 1 , 10µH 4.7µH 2.2µH 1 0.10.01 100µH 100 47µH 22µH Inductance(µH) Inductance(µH) 100 47µH 22µH 10µH 4.7µH 10 2.2µH 1µH 1µH 1 0.1 1 Frequency (MHz) 10 ·
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GLF1608 GLF1608T1R0M GLF1608T2R2M GLF1608T4R7M GLF1608T100M GLF1608T220M GLF2012T GLF2012T470K GLF2012T100K GLF2012T220K DVD PORTABLE POWER BOARD
Abstract: ã'¤ãƒ³ãƒ'ã'¯ã'¿ãƒ³ã'¹ CDH20D09D 0.47µH - 1.5µH ± 30%, 2.2µH - 6.8µH ± 20% CDH20D11D CDH20D14D *1 *2 , 775m 480m - 1.75 410m - 1.95 0.47µH - 1.4µH ± 30%, 2.2µH -10µH ± 20% 49m - 1.18 560m - 2.80 350m - 1.86 0.44µH - 1.5µH ± 30%, 2.2µH -15µH ± 20% 43m - 1.0 470m - 2.60 , ) CDH30D09D 49m - 707m 370m - 1.42 500m - 2.15 1.0µH - 1.5µH ± 30%, 2.2µH - 22µH ± 20% 43m - 858m 400m - 1.89 420m - 2.35 CDH30D14D 1.0µH - 2.2µH ± 30%, 3.3µH - 15µH ± 20 Sumida
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CDH38D11D/LD CDH38D16D/LD CDH43D11D/HP CDH38D14D

CPL2508

Abstract: 15UH 1 1µH 6.8µH 10 Frequency (MHz) 1.5µH 10µH 2.2µH 15µH 0 10 100 3.3µH 22µH 100 1µH 6.8µH 4.7µH - 1.5µH 10µH 1000 DC current(mA) 2.2µH 15µH 10000 3.3µH 22µH 4.7µH vs. 0 Inductance decreasing rate(%) 100000 10000 Impedance() 10 1000 100 10 1 0.1 1 1µH 6.8µH 1.5µH 10µH 10 Frequency (MHz) 2.2µH 15µH 100 ­5 ­10 ­15 ­20 ­25 ­30 ­35 ­40 ­45 ­50 10 100 1000 10000 DC current(mA) 3.3µH 22µH
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CPL2508T1R5M CPL2508T3R3M CPL2508T4R7M CPL2508T6R8M CPL2508T100M CPL2508 15UH 2.2uH 1uH, CPL2508T1R0M CPL2508T2R2M
Abstract: 22µH LX SHDN AIC1610 AIC1611 Low Battery Detection LBI REF OUT LBO GND FB , 5.0 5.5 400 L=22µH CIN=100µF COUT=100µF 350 300 250 VOUT=3.3V (FB=OUT) 200 , =5.0V L=22µH CIN=47µF COUT=47µF VIN=2.4V 60 40 AIC1610 (ILIMIT =1A) 10 AIC1610 (ILIMIT =1A , =5.0V L=22µH CIN=100µF COUT=100µF 80 40 VIN=1.2V 100 200 300 400 500 600 700 , 80 VIN=2.4V 60 40 VOUT=5.0V L=22µH CIN=47µF COUT=47µF VIN=1.2V 20 60 100 Analog Integrations
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AIC1610/AIC1611 500KH

EL0304RA-R22M

Abstract: EL0304RA CHANGE vs. TEMPERATURE CHARACTERISTICS 3 0.22µH L /L (%) 2 1 0 ­20 22µH 2.2µH 0.22µH 220µH 0 ­1 ­2 ­3 60 20 40 80 Temperature (°C) Measuring 0.22µH: 5MHz frequency 2.2µH: 5MHz 22µH: 1MHz 220µH: 500kHz Test 4192A IMPEDANCE equipment ANALYZER(YHP) 2.2µH 22µH 220µH Specimen 100 50 Inductance (µH) 56µH 22µH YHP model-4275A or equivalent 10 5.6µH 5 2.2µH 1 0.5 Q vs. FREQUENCY CHARACTERISTICS 100 2.2µH 220µH 60 Q 22µH 0.22µH 80 0.1 10 50 100 500 1000 DC current (mA) 5000
TDK
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EL0305 EL0304RA EL0606RA EL0304RA-R22M TDK EL0304 EL0304 EL0405 EL0606 EL0607 EL0909

NR3015

Abstract: NR3015T1R0N , 2.2µH, 4LEDs ­10 5.5 10 % OVP Over-Voltage Protection Threshold OVP ON OVP OFF 18 17.8 18.9 18.6 20 19.8 V ILIM Switch Current Limit L = 2.2µH RDS(ON , 2.2µH and 4 LEDs. TA = +25°C, unless otherwise stated.) Efficiency vs VIN Efficiency vs VIN , vs VIN 20160234 20160235 IOUT vs PWM Duty Cycle (VIN = 3.6V, L = 2.2µH) IOUT vs VIN , , L = 2.2µH) 20160261 20160259 7 www.national.com LM3519 Typical Performance
National Semiconductor
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LM3519MK-20 LM3519MKX-20 NR3015 NR3015T1R0N 33X3 2016 LED power INDUCTOR C2012X5R1A475M-10V CSP-9-111C2 CSP-9-111S2

33uH

Abstract: 0.47uH (µH) 1000 10 10 1 1 0.1 0.1 1 10 100 0.1 1 10 0.35µH 2.2µH 15µH 100µH 0.47µH 3.3µH 22µH 0.55µH 4.7µH 33µH 100 1000 DC current(mA) Frequency (MHz) 1µH 6.8µH 47µH 1.5µH 10µH 68µH 0.35µH 2.2µH 15µH 100µH 0.47µH 3.3µH 22µH , 1 0.35µH 2.2µH 15µH 100µH 0.47µH 3.3µH 22µH 0.55µH 4.7µH 33µH 1µH 6.8µH 47µH 1.5µH 10µH 68µH 100 1000 DC current(mA) Frequency (MHz) 0.35µH 2.2µH 15µH 100µH
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GLFR1608T3R3M-LR 33uH 0.47uH 68uH glfr1608tr47mlr 6.8uh GLFR1608TR35M-LR GLFR1608TR47M-LR GLFR1608TR55M-LR GLFR1608T1R5M-LR GLFR1608T6R8M-LR

la1230

Abstract: LA1140 :CBTKAC-24782AUO() T2:CBTKAE-24783X() 22µH:S-220J() 1 LA1140 AF AF 6 120µA 5 -GND , -24782AUO 22µH 7mm 10k 2.7k 22µH 10k 2.7k 119AC-14086Z 7mm 22µH 10k MTKAC-25639Z 10mm 22µH 10k 57-1011-01 7mm 22µH 10k 59-1167-04 10mm (22-µH ) 5.6k 24M-190-268 7mm 22µH 5.6k 24M-190-267 10mm 22µH 5.6k DC-11 7mm (22-µH ) 10k : : PS No.729-15/15 -
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LA3370 LA1231N PCA00389 la1230 cbtkac-24782 400Hz-100 ic la3370 N729E LA1140FMIF 6IF65 PC/O0193YO
Abstract: Inductance åž'å ã'¤ãƒ³ãƒ'ã'¯ã'¿ãƒ³ã'¹ CDRH30D14R 1.0µH - 2.2µH ± 30%, 3.3µH -10µH ± 20 , 2.2µH ± 30%, 3.3µH - 33µH ± 20% 23m - 810m 360m - 1.88 480m - 3.60 CDRH38D14R/HP *1 *2 *1 *2 (at 20˚C) *1 0.9µH - 2.2µH ± 30%, 3.6µH - 22µH ± 20% 20m - 700m 560m - 2.75 , 210m - 1.20 440m - 3.58 0.9µH - 2.2µH ± 30%, 3.3µH -100µH ± 20% 19m - 1.52 200m - 2.18 330m - 3.45 CDRH38D16R/HP 0.9µH - 2.2µH ± 30%, 3.3µH - 68µH ± 20% 20m - 1.36 Sumida
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CDRH30D16R CDRH38D14R CDRH60D28R CDRH60D43R CDRH98D18R CDRH50D28R

VLF3010AT-100MR49-1

Abstract: 22UH / j531_vlf3010a_1.fm (2/2) 100000 35 30 10000 2.2µH 4.7µH 10µH 22µH Impedance() Inductance(µH) 25 1000 20 22µH 15 100 10 0 10 1 4.7µH 5 0 0.1 0.2 0.3 , 100000 Q 50 80 2.2µH 4.7µH 10µH 22µH 70 60 40 50 2.2µH 4.7µH 10µH 22µH
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VLF3010AT-1R5N1R2-1 VLF3010AT-2R2M1R0-1 VLF3010AT-3R3MR87-1 VLF3010AT-4R7MR70-1 VLF3010AT-6R8MR61-1 VLF3010AT-100MR49-1 22UH VLF3010A-1 VLF3010AT-150MR40-1 VLF3010AT-220MR33-1 VLFVLF3010A-1

VLF3010A

Abstract: VLF3010AT2R2-M1R0 (µH) 25 20 15 10 5 0 0 0.1 0.2 Impedance() 2.2µH 4.7µH 10µH 22µH 1000 22µH 100 4.7µH , 2.2µH 4.7µH 10µH 22µH 40 2.2µH 4.7µH 10µH 22µH 50 40 30 20 Q 30 20 10 10 0 40 100
TDK
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VLF3010A VLF3010AT2R2-M1R0 VLF3010AT3R3MR87 VLF3010AT-1R5N1R2 VLF3010AT-2R2M1R0 VLF3010AT-3R3MR87 VLF3010AT-4R7MR70 VLF3010AT-6R8MR61

CPL2508

Abstract: 22UH Frequency (MHz) 1.5µH 10µH 2.2µH 15µH 0 10 100 3.3µH 22µH 4.7µH 100 1µH 6.8µH 1.5µH 10µH 1000 DC current(mA) 2.2µH 15µH 10000 3.3µH 22µH 4.7µH vs. 0 Inductance , 1.5µH 10µH 10 Frequency (MHz) 2.2µH 15µH 100 3.3µH 22µH 4.7µH ­5 ­10 ­15 ­20 ­25 , 2.2µH 15µH 3.3µH 22µH 4.7µH 001-01 / 20100224 / c531_cpl2508.fm -
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CPL2508T150M CPL2508T220M

33UH

Abstract: GLFR1608T2R2M-LR 10 1 10 1 0.1 0.1 1 10 100 Frequency (MHz) 0.35µH 2.2µH 15µH 100µH 0.47µH 3.3µH 22µH 0.55µH 4.7µH 33µH 0.1 1 10 100 1000 DC current(mA) 1µH 6.8µH 47µH 1.5µH 10µH 68µH 0.35µH 2.2µH 15µH 100µH 0.47µH 3.3µH 22µH 0.55µH 4.7µH 33µH , ­10 ­15 ­20 ­25 ­30 ­35 ­40 ­45 1 0.1 1 10 100 ­50 10 1 0.35µH 2.2µH 15µH 100µH 0.47µH 3.3µH 22µH 0.55µH 4.7µH 33µH 1µH 6.8µH 47µH 1.5µH 10µH 68µH
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GLFR1608T330M-LR GLFR1608T101M-LR J531 GLFR160 GLFR1608T150M-LR GLFR1608T220M-LR GLFR1608T470M-LR GLFR1608T680M-LR

GLCR2012

Abstract: GLCR2012T100M-HC 100 100µH 47µH Inductance(µH) Inductance(µH) 100 22µH 10µH 10 4.7µH 2.2µH 47µH 22µH 10 10µH 4.7µH 2.2µH 1 1.0µH 1 100µH 0.1 0.1 1 10 0.1 100 , decreasing rate(%) ­5 10000 Impedance() 100µH 47µH 1000 22µH 100 10µH 4.7µH 2.2µH 1.0µH 10 ­10 100µH 47µH ­15 ­20 22µH ­25 10µH ­30 4.7µH 2.2µH ­35 ­40 ­45
TDK
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GLCR2012 GLCR2012T100M-HC GLCR2012T101M-HC GLCR2012T1R0M-HC 012T2R2M-HC GLCR2012T4R7M-HC GLCR2012T220M-HC GLCR2012T470M-HC

SS14 VISHAY

Abstract: GRM32ER71H475K88L Current XC9210B093K (300kHz, 3.3V) L:22µH CDRH125 Tr1:Pch MOSFET :CPH3308 VOUT:3.3V Tr2:Nch , Efficiency EFFI (%) CIN:47µF PWM GND PWM CE Tr1:CPH3308, Tr2:CPH3408 L=22uH(CDRH125), CL , ) Tr2 : CPH3408 (SANYO) L : 22µH CL : 16V, 47µF x 2 CIN : 16V, 47µF (SUMIDA CDRH125 , ) ] } x 100 3) Tr1 : CPH3308 (SANYO) Tr2 : CPH3408 (SANYO) L : 22µH CL : 16V, 47µF x 2 , (Pch MOSFET : IR) L: 22µH (SUMIDA CDRH125) CIN : 16V, 47µF (NICHICEMI Tantalum MCE
National Semiconductor
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LM3407 SS14 VISHAY GRM32ER71H475K88L LM34071 GRM188R61A105KA61D 30046 CR43NP-330K LM3407NMOS DIMLM3407LED LED300 22V30V AN-1763

3.3uH inductor

Abstract: pwm 0565 CPRO 4700pF T VSS DVSS 2200pF FDN337N MA2Q737 CDRH104R 22µH 2 A + + F93 F93 , CDRH104R 22µH + BST ON/OFF VIN F93 F93 47µF 47µF EXT3 EXT2 CPH6401 Cfzfb 230pF IOUT , -8460B00AFT(VOUT=3.3 V) (2) S-8460B00AFT(VOUT=3.3 V) CPH6401,MA2Q737,CDRH104R/22µH 100 FTS2001,MA2Q737,CDRH104R/22µH 100 4.95V 4.95V 90 efficiency (%) efficiency (%) 90 80 3.3V 80 , -8460B00AFT(VOUT=3.3 V) CPH3403,D1FH3,CDRH104R/22µH CPH3403,MA2Q737,CDRH104R/22µH 100 100 4.0V 4.0V
National Semiconductor
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3.3uH inductor pwm 0565 AN-1149 SS14
Abstract: XC9210B093, VOUT: 3.3V Efficiency vs. Output Current L:22µH CDRH125 Tr1:Pch MOSFET :CPH3308 , PWM Tr1:CPH3308, Tr2:CPH3408 L=22uH(CDRH125), CL=94uF(Tantalum) CL: 47µFX2 FB MODE , : 22µH (CDRH125, SUMIDA) CL: 16V, 47µF x 2 (Tantalum, MCE Series, NICHICHEMI) CIN: 16V, 47µF , ) Tr2: CPH3408 (SANYO) L: 22µH (CDRH125, SUMIDA) CL: 16V, 47µF x 2 (Tantalum, MCE Series, NICHICHEMI , EXT2 Other components L : 22µH CIN : 16V, 47µF CL : 16V, 47µF x 2 SD - P-ch MOSFET Texas Instruments
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SNVS553B ISO/TS16949

Hight Air Temperature Switch

Abstract: S-8460B00AFT-TB Capability > 80% Peak Efficiency Up to 8MHz Switching Frequency Small External Components: 1µH - 3.3µH(typ.2.2µH , Tolerance/Variation VIN = 3.6V, 2.2µH, 4LEDs ­10 5.5 10 % OVP Over-Voltage Protection , = 2.2µH RDS(ON) Power NMOS Switch ON Resistance ILEAKAGE Switch Leakage RLED_rtn(ON , 2.2µH and 4 LEDs. TA = +25°C, unless otherwise stated.) Efficiency vs VIN Efficiency vs VIN , vs VIN 20160234 20160235 IOUT vs PWM Duty Cycle (VIN = 3.6V, L = 2.2µH) IOUT vs VIN
Seiko Instruments
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Hight Air Temperature Switch S-8460B00AFT-TB Si2302DS CDRH104R-47uH RB411D S-8460

12V to 300V dc dc converter step-up

Abstract: SUMIDA CDRH5D28 22µH LX SHDN AIC1610 AIC1611 Low Battery Detection LBI REF OUT LBO GND FB , 5.0 5.5 400 L=22µH CIN=100µF COUT=100µF 350 300 250 VOUT=3.3V (FB=OUT) 200 , =5.0V L=22µH CIN=47µF COUT=47µF VIN=2.4V 60 40 AIC1610 (ILIMIT =1A) 10 AIC1610 (ILIMIT =1A , =5.0V L=22µH CIN=100µF COUT=100µF 80 40 VIN=1.2V 100 200 300 400 500 600 700 , 80 VIN=2.4V 60 40 VOUT=5.0V L=22µH CIN=47µF COUT=47µF VIN=1.2V 20 60 100
Torex Semiconductor
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XC9502 MSOP-10 12V to 300V dc dc converter step-up SUMIDA CDRH5D28 CDRH5D28 CMS02
Abstract: ,CDRH104R/22 µH Si2302DS, D1FH3, CDRH104R/22 µH 100 1 FDN335N,D1FH3,CDRH104R/22µH FDN335N, D1FH3 , /22µH CPH3403, D1FH3, CDRH104R/22 µH 100 Efficiency(%) (%) Efficiency (%) (%) (10) S , Efficiency(%)(%) 80 IOUT=50mA 66mA FDN335N,D1FH3,CDRH104R/22µH FDN335N, D1FH3, CDRH104R/22 , µH FTS2001, MA2Q737, CDRH104R/22µH 100 Efficiency(%)(%) 100 Efficiency (%) (% , ,CDRH104R/22µH 2.58 200mA 5.08 IOUT=0.1mA 2.54 2.52 200mA 2.50 50mA VOUT(V Texas Instruments
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SNVS553A

do3314 3,3uh

Abstract: marking 332 sot23-6 (CL). fzfb = 30kHz (L=10µH) [ Example of Equation ] fzfb = 20kHz (L=22µH) RFB1 : 120k , 20kHz, L = 22µH) 130pF (fzfb = 10kHz, L = 47µH) < The use of ceramic capacitor CL > The , ) MA2Q737 (Schottky type, MATSUSHITA) When using ceramic type 22µH (SUMIDA CDRH5D28, FOSC = 100, 180kHz , : L: Tantalum Type 22µH (SUMIDA CDRH5D28, FOSC = 300kHz) 47µH (SUMIDA CDRH5D28, FOSC = 100, 180kHz) Except when IOUT(mA) / 100mA × VOUT / VIN > 2 22µH 10µH (SUMIDA CDRH5D18, FOSC = 500kHz) CL
National Semiconductor
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do3314 3,3uh marking 332 sot23-6 led driver 20ma SOT23 6pin tmk212b

LM3407

Abstract: SS14 VISHAY OFF 22µH LX SHDN AIC1610 AIC1611 Low Battery Detection LBI REF OUT + 47µF , vs. Supply Voltage 400 L=22µH CIN=100µF COUT=100µF 350 300 250 200 VOUT=3.3V (FB=OUT , =3.6V 120 100 80 VOUT=5.0V L=22µH CIN=47µF COUT=47µF VIN=2.4V 60 40 0 0.01 0.1 1 , VIN=3.6V 160 Efficiency (%) Ripple Voltage (mV) 200 VIN=2.4V 120 VOUT=5.0V L=22µH , =2.4V 60 VIN=3.6V 100 Ripple Voltage (mV) Ripple Voltage (mV) VIN=1.2V VOUT=5.0V L=22µH
National Semiconductor
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SS14 DIODE schottky

nichicon super through capacitor 4700 uf 50 v

Abstract: S-8460B00AFT-TBG - 1.2 C3-Z1.2R 1.2µH 90~450 0.33~0.85 0.55~1.05 C3-Z1.5R 2.2µH 90~800 0.25~0.80 0.30~1.00 1.8 C3-Z1.8R 2.2µH 85~1150 0.23~1.00 0.25~1.10 1.2 C3-Y1 , 1.8 C3-Y1.8R 1.2µH 68~820 0.30~1.80 0.30~1.90 2 C3-Y2.0R 2.2µH 47µH 70 , .5R 1µH 70~1170 0.38~2.60 0.42~1.75 C3-K1.5L 2.2µH 68µH 60~1050 0.14~0.85 0.26 , 1.5 3.0 3.0 CY Series 3.8 3.8 1.2 1.5 10µH 22µH 47µH 22µH 47µH 47µH
Seiko Instruments
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nichicon super through capacitor 4700 uf 50 v S-8460B00AFT-TBG d1fh3 shindengen regulator simple SL 100 NPN Transistor SL 100 NPN Transistor

AN-1149

Abstract: LM3407MY L26 22UH 1 2 IND-SP1207-220J L12 NS 1 2 IND-22UH-CT622LY C78 100NF X7R C82 C84 100NF , 100NF X7R X7R 11 L13 NS 1 2 IND-22UH-CT622LY L27 22UH 1 2 IND-SP1207-220J L28 22UH 1 2 IND-SP1207-220J 6 5 +36V 1UF 50VDC C94 100NF L14 NS 1 2 IND-22UH-CT622LY 4 , IND-22UH-CT622LY L29 22UH 1 2 IND-SP1207-220J 8/12 R42 6.2 0000-1206 5% C85 15 + , 22UH 1 2 IND-SP1207-220J L8 NS 1 2 IND-22UH-CT622LY C52 100NF X7R C53 U4 C58 100NF
National Semiconductor
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LM3407MY LM3407MYX
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