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CC848822263 GE Critical Power BLANK SLOT FILLER CENTRAL OFFICE visit GE Critical Power
2226027-1 TE Connectivity Ltd Mezzanine Conn, 25mm stack height,16 visit Digikey Buy
TPS2226ADBRG4 Texas Instruments Dual-Slot Cardbus Power-Interface Switches for Serial PCMCIA Controllers 30-SSOP -40 to 85 visit Texas Instruments
SN74ACT2226DW Texas Instruments 64 x 1 x 2 dual independent synchronous FIFO memories 24-SOIC -40 to 85 visit Texas Instruments
TLK2226GEA Texas Instruments 6 Port Gigabit Ethernet Transceiver 196-BGA 0 to 70 visit Texas Instruments Buy
TPS2226ADBR Texas Instruments Dual-Slot Cardbus Power-Interface Switches for Serial PCMCIA Controllers 30-SSOP -40 to 85 visit Texas Instruments

2226 transistor

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TRANSISTOR 2226

Abstract: 2226 transistor Transistors with built-in Resistor UNR2225/2226/2227 (UN2225/2226/2227) Silicon NPN epitaxial planer transistor Unit: mm For muting I Features · Low collector to emitter saturation voltage VCE , transfer ratio UNR2227 UNR2225/2226 VCE(sat) R1 IC = 50 mA, IB = 2.5 mA -30% 4.7 6.8 10 R1/R2 RON VI = 7 V , shows conventional part number. SJH00040AED 0.4±0.2 5° 1 UNR2225/2226/2227 I Electrical , IC (mA) Collector current IC (A) 2 SJH00040AED UNR2225/2226/2227 Cob VCB 14 IO
Panasonic
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TRANSISTOR 2226 2226 transistor UNR2225/2226/2227 UN2225/2226/2227 UNR2225 UNR2226 SC-59 UNR2225/2226

2226 transistor

Abstract: UNR2226 Transistors with built-in Resistor UNR2225/2226/2227 (UN2225/2226/2227) Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 ­0.05 0.16+0.10 ­0.06 (0.95) (0.95 , 5 V VCE = 5 V, IC = 50 mA 70 Forward current transfer ratio UNR2227 UNR2225/2226 , /2226/2227 s Electrical Characteristics (continued) Ta = 25°C ± 3°C · RON measurment circuit RL R1 , 10m 100m 1 Collector current IC (A) 10 UNR2225/2226/2227 Cob VCB IO VIN VIN
Panasonic
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ic MARKING FZ transistor 2227

2226 transistor

Abstract: RN2227 RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify , voltage RN2225, 2226 -10 VEBO RN2227 Collector current Collector power dissipation Junction , RN2225, 2226 VI (OFF) RN2227 Translation frequency Collector output capacitance RN2221~2227
Toshiba
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RN1221 RN1227 2227 961001EAA1

TRANSISTOR sd 346

Abstract: Lautsprecher RFT L 2911 . Mitteilung aus dem VEB EFT IV RuF Leipzig Äquivalenzlösung für Transistor P 215 A im Raduga 726/73o Der originale Transistor P 215 A wird unter Beachtung folgender Hinweise durch den Transistor SD 346, EDV-Hr. ¿3 , Kühlblech aufßeschraubt (beim Transistor maß die Beschriftung zu sehen sein). Im Bereich der Auflagefläche , isoliert im Gerät mon tiert ist, muß eine Isolierscheibe zwischen Transistor und Kühlblech verwendet werden , (L 2226) 2322 (L 2311) 2432 2921 9801 5954 (L 5904) 8331 6061 (L 6011) P 1008 G e r ä t Color 20
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TRANSISTOR sd 346 Lautsprecher RFT L 2911 TRANSISTOR b 882 p Lautsprecher LP rft lautsprecher C 4804 transistor

SV-O4

Abstract: M54563P M54563P 8-UNlT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M54563P , Transistor OFF -0.5-+50 V vs Supply voltage 50 V V, Input voltage 0-hlO V lo Output current Transistor , -55â'"1-125 â'¢c 2-226 A MITSUBISHI ELECTRIC fc,3E â  b24TB2? 0015D7T bQS HdlTB ««'TSUB.SH. BIPOLAR DIGITAL ICs MITSUBISHI (DGTL LOGIC) IVI54563P 8-UNIT SOOmA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH , -UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ALLOWABLE OUTPUT CURRENT AS A FUNCTION
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SV-O4 L0350 8-channel PNP darlington array bipolar power transistor driver circuit npn 8 transistor array pnp 8 transistor array VS-50V

Lu32

Abstract: ERROR (LSB) OVDD 0.75 0.50 0.25 0 ­0.25 ­0.50 ­0.75 CLOCK/DUTY CYCLE CONTROL 2226 TA01 + ANALOG , OGND ­1.00 0 1024 2048 CODE 3072 4096 2226 TA01b CLK 2226hf 1 LTC2226H ABSOLUTE , CODE 3072 4096 2226 G01 0.75 0.50 DNL ERROR (LSB) 0.25 0 ­0.25 ­0.50 ­0.75 ­1.00 0 1024 2048 CODE 3072 4096 2226 G02 INL ERROR (LSB) 0 2 4 6 8 FREQUENCY (MHz) 10 12 2226 G03 8192 , ­70 ­80 ­90 ­100 ­110 ­120 0 2 4 6 8 FREQUENCY (MHz) 10 12 2226 G04 8192 Point FFT, fIN = 70MHz
Linear Technology
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Lu32 2226H 25LSBRMS 575MH LTC2246H 450MH 900MH
Abstract: INL ERROR (LSB) OVDD 0.75 0.50 0.25 0 ­0.25 ­0.50 ­0.75 CLOCK/DUTY CYCLE CONTROL 2226 TA01 + , · · · D0 OGND ­1.00 0 1024 2048 CODE 3072 4096 2226 TA01b CLK 2226hfa , CODE 3072 4096 2226 G01 0.75 0.50 DNL ERROR (LSB) 0.25 0 ­0.25 ­0.50 ­0.75 ­1.00 0 1024 2048 CODE 3072 4096 2226 G02 INL ERROR (LSB) 0 2 4 6 8 FREQUENCY (MHz) 10 12 2226 G03 8192 , ­70 ­80 ­90 ­100 ­110 ­120 0 2 4 6 8 FREQUENCY (MHz) 10 12 2226 G04 8192 Point FFT, fIN = 70MHz Linear Technology
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800MH

800ma

Abstract: RN2222 RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = -800mA) l With built-in bias resistors l Simplify , Emitter-base voltage RN2225, 2226 -10 VEBO -5 RN2227 Collector current Collector power , -1.3 -0.4 -0.8 -0.5 -1.0 RN2225, 2226 VI (OFF) RN2227 Translation
Toshiba
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800ma

RN1221

Abstract: RN1227 RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify circuit , , 2226 -10 VEBO -5 RN2227 Collector current Collector power dissipation Junction temperature , RN2225, 2226 VI (OFF) RN2227 Translation frequency Collector output capacitance RN2221~2227
Toshiba
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Abstract: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = -800mA) z With built-in bias resistors z Simplify circuit design z , Collector-emitter voltage RN2221~2227 RN2221~2224 Emitter-base voltage RN2225, 2226 RN2227 Collector current , output capacitance RN2225, 2226 RN2227 RN2221~2227 RN2221~2227 RN2221 RN2222 RN2223 Input resistor RN2224 Toshiba
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Abstract: ERICSSON ^ PTB 20157 20 Watts, 1.35-1.85 GHz Cellular Radio RF Power Transistor Description The 20157 is a Class C, NPN, common base RF Power Transistor intended for 22-26 VDC operation across the 1.35 -1.85 GHz frequency band. It is rated at 20 Watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metalization are used to ensure excellent device uniformity, ruggedness and reliability. 100% Lot Traceability is -
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Abstract: e PTB 20157 20 Watts, 1.35­1.85 GHz RF Power Transistor Description The 20157 is an NPN common base RF power transistor intended for 22­26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 20 Watts, 1.35­1.85 GHz Class C Characteristics 40% Min Collector Ericsson
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1-877-GOLDMOS 1301-PTB

RN2223

Abstract: ko iq TOSHIBA TOSHIBA TRANSISTOR RN2221-RN2227 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. Unit in mm High Current Type (l£ (MAX)= -800mA) With Built-in Bias , Power Dissipation Junction Temperature Storage Temperature Range RN2221-2227 RN2221-2224 RN2225, 2226 , RN2225 RN2226 RN2227 RN2221-2224 VCE - - 5 V Input Voltage (OFF) RN2225, 2226 Vi (OFF) I q = -0.1mA
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ko iq

2228

Abstract: LTC2227 * LTC2228CUH LTC2228IUH LTC2227CUH LTC2227IUH LTC2226CUH LTC2226IUH 2228 2228 2227 2227 2226 2226 , (MHz) 12 10 2226 G03 LTC2228: 8192 Point FFT, fIN = 70MHz, ­1dB, 2V Range, 65Msps , AMPLITUDE (dB) 0 ­10 AMPLITUDE (dB) 0 ­10 AMPLITUDE (dB) 0 2226 G02 2226 G01 ­40 , 2 4 6 8 FREQUENCY (MHz) 10 0 12 2226 G06 LTC2228: SNR vs Input Frequency, ­1dB , ­90 ­100 70 69 10000 ­110 ­120 ­120 12 10 2226 G05 2226 G04 AMPLITUDE
Linear Technology
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LTC2253 LTC2255 LTC2252 LTC2254 LTC2229 LTC2249 2228 LTC2227 LTC2247 LTC2248 LTC2228/LTC2227/LTC2226 65/40/25M 2228/LTC2227/LTC2226 W/120
Abstract: T O SH IB A RN2221 ~ R N 2 2 2 7 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High C urrent Type (10 (MAX)= â'"800mA) W ith Built-in Bias , Collector-Emitter Voltage RN 2221-2227 VCBO VCEO Emitter-Base Voltage RN 2221-2224 RN2225, 2226 , 2221-2224 V C E -5 V Input Voltage (OFF) RN2225, 2226 Vi (OFF) I q = â'"0.1mA RN2227 Transition -
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N2221

RN1227

Abstract: RN2221 RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications High current type (IC(MAX) = -800mA) With built-in bias resistors Simplify circuit , voltage RN2225, 2226 -10 VEBO -5 -6 RN2227 Collector current Collector power dissipation , -0.8 -1.3 RN2225, 2226 VI (OFF) RN2227 Translation frequency Collector output
Toshiba
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LTC2229

Abstract: LTC2249 32-Lead (5mm × 5mm) Plastic QFN ­40°C to 85°C LTC2226CUH#PBF LTC2226CUH#TRPBF 2226 32-Lead (5mm × 5mm) Plastic QFN 0°C to 70°C LTC2226IUH#PBF LTC2226IUH#TRPBF 2226 32-Lead (5mm × , LTC2227IUH#TR 2227 32-Lead (5mm × 5mm) Plastic QFN ­40°C to 85°C LTC2226CUH LTC2226CUH#TR 2226 32-Lead (5mm × 5mm) Plastic QFN 0°C to 70°C LTC2226IUH LTC2226IUH#TR 2226 32-Lead (5mm , ­100 ­1.00 1024 0 2048 CODE 3072 4096 ­110 1024 0 2048 CODE 3072 2226
Linear Technology
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LTC2226 LTC2246 LTC2225 LTC2245 15LSB LTC2284

SFH608

Abstract: SFH608-2 input currents with the output transistor saturated. This makes the device ideal for low current , 1-888-Infineon (1-888-463-4636) SFH608 2­226 March 11, 2000-22 Figure 5. Diode Forward , ) Figure 11. Transistor Capacitance (typ.) TA=25°C, f=1.0 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f(VEB
Infineon Technologies
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SFH608-2 SFH608-3 SFH608-4 SFH608-5 E52744 1-888-I

DIODE F10

Abstract: f10f10 the output transistor saturated. This makes the device ideal for low current switching applications , 1-888-lnfineon (1-888-463-4636) 2-226 SFH608 March 11, 2000-22 Figure 5. Diode Forward Voltage , 11. Transistor Capacitance (typ.) TA=25°C, f=1.0 MHz, CCE=f(VCE) CCB=^ c E B = f('/EB) Figure 6
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DIODE F10 f10f10 TRANSISTOR p50

SFH608

Abstract: SFH608-2 output transistor saturated. This makes the device ideal for low current switching applications. The , -August-01 www.vishay.com 2­226 Figure 5. Diode Forward Voltage (typ.) TA=25°C, VF=f(IF) Figure 8. Output cHaracteristics (typ.) TA=25°C, ICE=f(VCE, IF) Figure 11. Transistor Capacitance (typ.) TA=25°C, f=1.0 MHz
Vishay Intertechnology
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