NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: GWM 220-004P3 Three phase full Bridge VDSS = 40V = 180 A ID25 RDSon typ. = 2.0mW , bent leads (BL) K/W K/W 20081126f 1-3 GWM 220-004P3 Source-Drain Diode Symbol , 2-3 GWM 220-004P3 Straight Leads Bent Leads GWM 220-003P3-SL 220-003P3-SL G1 GWM 220-003P3-BL 220-003P3-BL , S5 G6 L3 S6 Part Marking Delivering Mode Base Qty. Ordering Code GWM 220-004P3 - SL GWM 220-004P3 Blister 36 503 169 Standard GWM 220-004P3 - SMD GWM ... | Original |
3 pages, |
marking G5 MOSFET smd diode S5 SMD MARKING CODE s4 SMD MARKING g3 G2 SMD code smd diode code s6 smd G2 smd diode S2 smd diode g6 SMD MARKING g5 SMD MARKING s6 smd diode g5 smd diode code g3 220-004P3 220-004P3 abstract |
|
|||
| Abstract: GWM 220-004P3 VDSS = 40 V RDSon = 2.0 m ID25 = 190 A Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G5 S3 S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 L- Applications MOSFETs Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 40 ±20 VGS V V ID25 ID90 TC = 25°C TC = 90°C , limits, test conditions and dimensions. 94 18 29 1-2 GWM 220-004P3 Component Equivalent ... | Original |
2 pages, |
220-004P3 220-004P3 abstract |
|
|||
| Abstract: GWM 220-004P3 VDSS = 40 V RDSon = 2.0 m ID25 = 190 A Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G5 S3 Pins Gate S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin L- Applications MOSFETs Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 40 ±20 VGS V V , 1-2 GWM 220-004P3 Component Equivalent Circuits for Simulation Symbol Conditions ... | Original |
2 pages, |
220-004P3 220-004P3 abstract |
|
|||
| Abstract: GWM 220-004P3 Advanced Technical Information VDSS = 40 V RDSon = 2.6 m ID25 = 220 A Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 L- Applications MOSFETs Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 40 ±20 VGS V V ID25 ID90 TC = , · in battery supplied equipment 1-2 Advanced Technical Information GWM 220-004P3 ... | Original |
2 pages, |
lift control 220-004P3 220-004P3 abstract |
|
|||
| Abstract: 220-004P3-XXX 40 190 GWM 160-0055P3-xxx 55 160 GWM 120-0075P3-xxx 75 125 GWM 70-01 P2-xxx 100 70 Note: xxx ... | OCR Scan |
2 pages, |
mosfet 7001 active suspension datasheet abstract |
|
|||
| Abstract: A mfì nC ns GWM 220-004P3-XXX 40 190 145 GWM 160-0055P3-XXX 160-0055P3-XXX 55 160 120 GWM 120-0075P3-XXX 120-0075P3-XXX 75 125 ... | OCR Scan |
2 pages, |
AEC-Q101 AEC-Q101 abstract |
|
|||
| Abstract: R1446NS12C R1271NS12 SW22CXC14C N600SH16 SW06CXC19C r1275ns20l R1271ns12C 100-01X1 100-01X1 GWM 120-0075X1 120-0075X1 GWM 160-0055X1 160-0055X1 GWM 220-004P3 Ø GWM 220-004X1 220-004X1 I Ø IPC 75PX330GD 75PX330GD ¡ IX 2A11P1 2A11P1 ... | Original |
288 pages, |
Westcode SW22cxc14c vub 70-12 48N60 vub 70-16 60n30 IXDD 614 10M45 C 547 B W57 BJT transistor 10N60C 18N50 equivalent MOSFET smd 4407 7N60B equivalent datasheet abstract |
|
|||