500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : CT1-X0-12-092-A71-MJ Supplier : Carling Technologies Manufacturer : Avnet Stock : - Best Price : $27.4889 Price Each : $58.6453
Part : DEA162450BT-2092A1-H Supplier : TDK Manufacturer : Avnet Stock : - Best Price : $0.1025 Price Each : $0.1177
Part : G8209-2A1 Supplier : Glenair Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : G8209-2A2-4H Supplier : Glenair Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 4980JA2092A Supplier : LG Innotek Manufacturer : Newark element14 Stock : 2 Best Price : $5.99 Price Each : $6.30
Part : DC2092A Supplier : Linear Technology Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : S82092AA Supplier : Intel Manufacturer : Rochester Electronics Stock : 1,992 Best Price : $30.15 Price Each : $37.10
Part : T20-92A Supplier : The Cherry Manufacturer : basicEparts Stock : 230 Best Price : - Price Each : -
Part : CHX2092A-99F/DR Supplier : CUSTOM DIE REPACK Manufacturer : Richardson RFPD Stock : - Best Price : $31.18 Price Each : $31.18
Part : CHX2092A99F Supplier : United Monolithic Semiconductors Manufacturer : Richardson RFPD Stock : - Best Price : $18.34 Price Each : $18.34
Part : DEA162450BT-2092A1-H Supplier : TDK Manufacturer : Chip1Stop Stock : 4,000 Best Price : $0.1413 Price Each : $0.6160
Part : 3SBC2092A2 Supplier : TE Connectivity Manufacturer : Master Electronics Stock : 1 Best Price : $484.47 Price Each : $514.12
Shipping cost not included. Currency conversions are estimated. 

2092A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: [CQ-2092] CQ-2092 高é'å¿ç­" 小åž' 電æuã'»ãƒ³ã'u æ¦'要 CQ-2092ã , EEPROM Unit DATA_IO N VOUT VDD SCLK Figure 1. CQ-2092のãƒãƒ­ãƒƒã'¯å›³ MS1266-J , IIN 1/2 VDD VDD VOUT â'INS Nâ'P 0 Pâ'N INS IIN Figure 2. CQ-2092ã , View) 1 2 3 4 5 Figure 3. CQ-2092のãƒ"ンé置図 MS1266-J-05 2013/06 -2- [CQ , "ƒ] Figure 4. CQ-2092のデã'£ãƒ¬ãƒ¼ãƒã'£ãƒ³ã'°ã'«ãƒ¼ãƒ æ¨å¥¨å'•ä½æ¡ä»¶ Table 4. æ¨å¥¨å'•ä½æ¡ä Asahi Kasei Microdevices
Original
Abstract: NICHIA STS-DA1-2092A N I CH I A CORPORATI ON SPECI FI CATI ON S FOR W H I TE LED N SPW 5 1 0 H S- K1 RoHS Compliant NICHIA STS-DA1-2092A SPECIFICATIONS , as per CIE 1931 Chromaticity Chart. 1 NICHIA STS-DA1-2092A RANKS Item , shall be determined by Nichia. 2 NICHIA STS-DA1-2092A CHROMATICITY DIAGRAM , 0.40 0.45 x 3 NICHIA STS-DA1-2092A OUTLINE DIMENSIONS RoHS This Nichia
Original
STS-DA1-2092A
Abstract: 2SJ194 2083a 2092a LD (Low Drive) Series VDss=100V P Channel Power MOSFET ©3767 Features â'¢ Low ON resistance. â'¢ Very high-speed switching. â'¢ Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Voss Gate to Source Voltage VGss Drain Current(DC) Id Drain Current(Pulse) Idp Allowable Power Dissipation Pq Channel Temperature Tch Storage Temperature , 2083A (unit : mm) Package Dimensions 2092A (unit : mm) ¿4 jr u-U SANYO : TP G : Gate D : Drain S -
OCR Scan
mosfet 3767
Abstract: 2SK1474 2083A 2092A LD ( L o w D riv e ) S e rie s V Ds s - 100V N Channel Power MOSFET .T 3 7 7 5 A F eatures · Low ON resistance. Very high-speed switching. · Low-voltage drive. A b solu te M axim um R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current(DC) Id Drain Current(Pulse) ! dp Allowable Power Dissipation Pd Tch Channel Temperature , , _LS1_ P a ck a g e D im en sion s 2092A (unit : mm) 0,5 a jü JLS. G : Gat© D : Drain S -
OCR Scan
37751 100//A 90893TH
Abstract: 2SJ188 2083A 2092A LD (Low Drive) Series VDss = 30V P Channel Power MOSFET ©376IA Features - Low ON resistance â'¢ Very high-speed switching â'¢ Low-voltage drive Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vdss -30 V Gate to Source Voltage Vgss ±15 V Drain Current (DC) Id -2 A Drain Current (Pulse) Idp PWS 10/is, duty cycled 1% -8 A , SANYO : TP Package Dimensions 2092A (unit : mm) fépT^ G-.Gate D : Drain S : Source SANYO : TP - FA -
OCR Scan
13A21
Abstract: 2SK1475 2083A 2092A LD (L o w D rive) S eries VDSs = 1 0 0 V N Channel P o w er M O S F E T F eatures · Low ON resistance. · Very high-speed switching. · Low-voltage drive. A bsolute M aximum R atings atT a = 25°C Drain to Source Voltage V dss Gate to Source Voltage V gss Drain Current(DC) Id Drain Current(Pulse) I dp Allowable Power Dissipation Pd Tch Channel Temperature Tstg Storage , 2 .3 Package D im ensions 2092A (unit : mm) G : Gate D : Drain S : Source SANYO : TP G -
OCR Scan
83093TH
Abstract: 2SJ192 2083A 2092A LD (Low Drive) Series VDSs = 60V P Channel Power MOSFET ©3765 Features â'¢ Low ON resistance. â'¢ Very high-speed switching. â'¢ Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage VDSS -60 V Gate to Source Voltage Vgss ±15 V Drain Current(DC) Id -4 A Drain Current(Pulse) Idp PWS 10/^s, duty cycled 1% -16 A , SANYO : TP Package Dimensions 2092A (unit : mm) â'", , ?-3. 50 0.85 E3 O. 0-6° H . oi G -
OCR Scan
diode sy 710 sy 710 diode
Abstract: 2SJ281 AP (Advanced Performance) Series 2092A_VDSs = 250V P Channel Power MOSFET ©4243A Features â'¢ Low ON resistance. â'¢ Very high-speed switching. â'¢ Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vdss -250 V Gate to Source Voltage vgss ±30 V Drain Current(DC) Id -3 A Drain Current(Pulse) Idp PWS 10^s, duty cycleS 1% -12 A , J\ HU Package Dimensions 2092A (unit : mm) 0.85 6.5 ¿3, G : Gate D : Drain S : Source -
OCR Scan
02093TH
Abstract: 2SK1475 2083A 2092A LD (Low Drive) Series VDSS= 1 OOV N Channel Power MOSFET ©3776A Features â'¢ Low ON resistance. â'¢ Very high-speed switching. â'¢ Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vdss 100 V Gate to Source Voltage vgss ±15 V Drain Current(DC) Id 8 A Drain Current(Pulse) Idp PWS 10,«s, duty cycle S 1% 32 A Allowable Power , »-2 3 Package Dimensions 2092A (unit ; mm) G : Gale D : Drain S : Source SANYO : TP G : Gate D -
OCR Scan
3776a 7wu7 VDD-50V
Abstract: 2SJ281 2083A 2092A AP (Advanced Performance) Series VD Ss = 2 5 0 V P Channel Power MOSFET F e a tu r e s · Low O N re sista n c e . · V ery high-sp eed sw itch in g . Low -voltage drive. b s o lu te M a x im u m R a ti n g s a t T a D rain to Source V oltage G ate to Source V oltage D rain C urren t(D C ) D ra in C u rre n t(P u lse ) A llow able Pow er D issipatio n C h a n n e l T e m p , n s 2083A (u n it : mm ) P a c k a g e D im e n s io n s 2092A (u n it : mm ) ( v 0 .6 5 -
OCR Scan
10//S BX-0706
Abstract: 20 83A 2092A LD (L o w D rive) S eries V D ss = 6 0 V P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s Low ON resistance Very high-speed switching · Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage V gss Drain C urrent (DC) Id Drain Current (Pulse) Idp Allowable Power Dissipation Pd Channel Tem perature Tch Storage , Package Dimensions 2092A (unit : mir>) 085 Jü ShS, .1.2 0 ^ Ò *-1 G 0 S G : G ate 0 -
OCR Scan
42893TH/N1292MH 2SJ191
Abstract: 2SK1469 2083A 2092A LD (Low Drive) Series VDSs=30V IM Channel Power MOSFET ©3770A Features - Low ON resistance. â'¢ Very high-speed switching. â'¢ Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vdss 30 V Gate to Source Voltage vgss ±15 V Drain Current(DC) Id 8 A Drain Current(Pulse) Idp PWS 10fis, duty cycled 1% 32 A , ÏU 085-y -sa. JL6. J ODS Package Dimensions 2092A (unit : mm) ,i.z Luì G : Gate D : Drain -
OCR Scan
jjby
Abstract: 2SK1468 2083a 2092A LD (L o w D riv e ) S e rie s V D S S= 3 0 V N Channel Power M OSFET f '3 7 6 9 A F e a tu re s · Low ON resistance. · Very high-speed switching. · Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage V DSS Gate to Source Voltage V GSS D rain Current(DC) Id D rain C urrent(Pulse) Idp Allowable Power Dissipation Pd C hannel T , c k a g e D im e n sio n s 2083A P a c k a g e D im e n sio n s 2092A (u n it : mm) G Gate D -
OCR Scan
71993TH
Abstract: 2SJ191 2083A 2092A LD (Low Drive) Series VDSS = 60V P Channel Power MOSFET ©3764A Features â'¢ Low ON resistance â  Very high-speed switching â'¢ Low-voltage drive Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Voss -60 V Gate to Source Voltage vgss ±15 v Drain Current (DC) id -2 A Drain Current (Pulse) idp PWâ 10/js, duty cycled 1% -8 A Allowable Power , SANYO : TP Package Dimensions 2092a (unit : mir-) H V u tirHft G : Gate \2j\tal D : Draii Drain S -
OCR Scan
Abstract: 2SK1472 W 2092A LP (Low Drive) Series VDss=60V N Channel Power MOSFET ©3773A Features â'¢ Low ON resistance. â'¢ Very high-speed switching. â  Low-voltage drive. 2083A Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vdss 60 V Gate to Source Voltage vgss ±15 V Drain Current(DC) Id 8 A Drain Current(Pulse) Idp PW ä 10//s, duty cycle S 1% 32 A Allowable Power , , JLS. li'ii ft JL5 jq Package Dimensions 2092A (unit : mm) 6.5 », JOh Er G : Gate D : Drain S -
OCR Scan
3773A 3773 P D-30V Q013TET
Abstract: 2SK1471 2083A 2092A_LP (Low Drive) Series VDSs = 60V N Channel Power MOSFET (E)3772A Features â'¢ Low ON resistance. â'¢ Very high-speed switching. â  Low-voltage drive. Absolute Maximu m Ratings at Ta = 25°C unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage Vgss ±15 V Drain Current(DC) Id 4 A Drain Current(Pulse) Idp PWS 10//S, duty cycled 1% 16 A Allowable Power Dissipation , '"]-!â'"[»-2.3 Package Dimensions 2092A (unit : mm) 2.3 . ^ J1S G : Gate D : Drain S : Source SANYO -
OCR Scan
bd7s 2083A 0d13 VDD-30V GD131E5
Abstract: 2SK1472 2083A 2092A LD (L o w D rive) S eries V Dss - 6 0 V N Channel Power M OS F ET F e a tu re s Low ON resistance. · Very high-speed switching. · Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss G ate to Source Voltage V g ss D rain Current(DC) Id D rain C urrent(Pulse) Id p Allowable Power D issipation Pd C hannel T em perature Storage , n sio n s 2083A (unit : mm) u 6 5 73 P a c k a g e D im e n sio n s 2092A (u n it : mm) o.as -
OCR Scan
VD0-30V
Abstract: 2SJ189 · 2083A 2092A LD (L o w D riv e ) S e rie s V D S s= 3 0 V P Channel Power M OSFET ©3762A F e a tu re s Low ON resistance · Very high-speed switching · Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage V dss Gate to Source Voltage VGSS Drain C urrent (DC) Id Drain C urrent (Pulse) Idp Allowable Power Dissipation Pd Tch Channel Tem , g e D im ensions 2092A (unit : mm) ( Y Q« U -W T JL6. fl .C L 5 Gate D : Drain -
OCR Scan
Abstract: 2SJ195 2083A 2092A LD (L o w D rive) Series VD s = 1 0 0 V s P Channel Power MOSFET © 3768 F e a tu re s â Low ON resistance. â'¢ Very high-speed switching. â'¢ Low-voltage drive. A bsolute M axim um R atin g s at Ta=25°C Drain to Source Voltage V d ss Gate to Source Voltage V q ss Drain Current(DC) Id Drain Current(Pulse) Idp Allowable Power Dissipation Pd Tch Channel , ns V P ac k a g e D im ensions 2092A (unit : mm) U LS 06 C O S |r» n "n -
OCR Scan
42693TH
Abstract: 2SJ189 2083A 2092A LD (Low Drive) Series VDSs = 30V P Channel Power MOSFET ©3762a Features â'¢ Low ON resistance â  Very high-speed switching â'¢ Low-voltage drive Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vdss -30 V Gate to Source Voltage Vgss ±15 V Drain Current (DC) Id -4 A Drain Current (Pulse) Idp PWä 10//s, duty cycled 1% -16 A Allowable , Dimensions 2092A (unit : mm) SANYO : TP Gate D : Drain S : Source SANYO : TP-FA 42893TIÌ/N1292MH (KOTO -
OCR Scan
1h23 P CHANNEL POWER MOSFET
Abstract: ensions 2083A (u n it: mm) 2-3, P ackage D im ensions 2092A (u n it: mm) as. F+Ai 0:5 -
OCR Scan
Abstract: 2SK1469 2083a 2092A LD (L o w D rive) S eries V Dss = 3 0 V N Channel Power M O SFET ©3770A F e a tu re s · Low ON resistance. · Very high-speed switching. · Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage V dSS G ate to Source Voltage Vgss D rain Current(D C) Id D rain C urrent(Pulse) Idp Allowable Power Dissipation Pd Channel T em perature , a c k a g e D im e n sio n s 2083A (u n it: mm)i, 5-0 P a c k a g e D im e n sio n s 2092A (u n -
OCR Scan
Abstract: 2SJ188 * 2083A 2092A LD (L o w D rive) S eries V D S S= 3 0 V P Channel Power M O SFET © 3 7 6 1A = -_ _ F e a tu re s Low ON resistance Very high-speed sw itching Low-voltage drive A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage V d ss G ate to Source V oltage V g ss D rain C u rre n t (DC) Id D rain C u rren t (Pulse) Idp Allowable Pow er D , 2092A (unit : mm) LS ( \ in O i/i 0.65 . 7 - J J . JL6, CDU o*- Q.S G ! G a -
OCR Scan
SJ18 42893TH/N1292M
Abstract: 2SJ192 2083A 2092A LD (L o w D rive) S eries V D ss=60V P Channel Power M OSFET Features · Low ON resistance. · Very high-speed switching. Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage V gss Drain Current(DC) Id Drain Current(Pulse) Idp Allowable Power Dissipation Pd Tch Channel Temperature Storage Temperature Tstg E lectrical C , Dim ensions 2083A (unit : mm) ,L5_ 23 Package Dim ensions 2092A (unit : mm) L S ( JQ Ü 1 JU -
OCR Scan
41293TH
Abstract: 2SK1920 A P (Advanced Perform ance) Series 2083A 2092A V dss = 250V N Channel Power MOSFET © 4244A F e a tu r e s â Low ON resistance. â'¢ Very high-speed sw itching. â'¢ Low-voltage drive. A b so lu te M axim u m R a tin g s a tT a = 25°C Drain to Source V oltage V dss Gate to Source V oltage VGSS D rain Current(DC) Id D rain Current(Pulse) Idp A llow able Power D , 700 pF 420 95 pF pF 30 Continued on next page P a c k a g e D im e n s io n s 2092A (unit -
OCR Scan
Showing first 20 results.