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2-95A1A

Catalog Datasheet MFG & Type PDF Document Tags

MG75J2YS40

Abstract: MG100J2YS45 MG100J2YS550 2-94D1A MG100Q2YS1 2-109B4A MG100Q2YS9 2-109C1A 150 MG150J2YS40 2-95A1A MG150J2YS50 2-95A1A 200 300 400 MG200J2YS40 MG300J2YS40 MG400J2YS40 2-95A1A 2-109C1A 2-109D1A MG200J2YS50 MG300J2YS50 MG400J2YS50 2-95A1A 2-10901A 2-109D1A MG200Q2YS1 2-109B4A MG200Q2YS9 2-109C1A Î YS , 2-94D1A MG75J2YS45 2-9401A MG75J2YS50 2-94D1A MG100J2YS45 MG150J2YS45 2-94D1A 2-95A1A MG200J2YS45 2-95A1A MG200J2YS5Û 2-95A1A MG300J2YS45 2-109C1A MG400J2YS45 2-109D1A MG400J2YS50 2-109D1A
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OCR Scan
MG400Q1US11 MG50J2YS45 MG75Q2YS11 MG150Q2YS11 MG75J2YS40 MG300Q1US MG100J2YS40 MG200Q1US11 2-109A4A MG300Q1US11 MG500Q1US11 MG400Q1US21

GT250101

Abstract: MG150J2YS40 2-94D1A MG100J2YS50 2-94D1A 150 MG150J2YS40 2-95A1A MG150J2YS50 2-95A1A 200 300 400 MG200J2YS40 MG300J2YS40 MG400J2YS40 2-95A1A 2109D1A 2-109C1A MG200J2YS50 MG300J2YS50 MG400J2YS50 2-95A1A , 2-94D1A MG75J2YS45 2-94D1A MG75J2YS50 2-94D1A MG75Q2YS11 2-108A2A MG100J2YS45 MG150J2YS45 2-94D1A 2-95A1A MG100J2YS50 MG150J2YS50 2-9401A 2-95A1A MG200J2YS45 2-95A1A MG200J2YS50 2-95A1A MG300J2YS45 2-109C1A , 2-94D1A 2-95A1A 4 ± 0 .5 4 + 0,5 9 .9 ± 0 .8 27 ± 0 .5 7±0 5 7 ± 0 .5 2 0 ± 0 .5 1
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OCR Scan
GT250101 MG200Q1JS9 MG50J6ES40 MG200Q2YS91 GT50J101 MG7501BS11 T0-220N 2-99A1A 2-99B1A

2-94D4A

Abstract: MG200J2YS50 800 2400 2-109A4A 1 MG200J2YS50 600 200 400 2,7 200 150 150 900 2-95A1A 2 MG300J2YS50 600 300 600 2 , 2-109A4A 2-109C1A 2-95A1A 2-95A4A nporpaMMa 2-94D1A [._9i±0-5 2-94D4A JAPAN 108± 4-0 6.5 ± 0.3
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OCR Scan
MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400Q1US41 MG100Q2YS42 MG50Q2YS40 MG75Q2YS50 Toshiba MG200Q2YS40 2-94A2A 2-109F1A MG50J2YS50

2-64A2A

Abstract: T03PN 2-109D1A , 2 8 1 0 6 , 2 8 1 0 6,2 8 9 1 0 8, I -·- u · i j [l 2-95A1A 2-109
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OCR Scan
2-64A2A T03PN TQ-220SM T0-220 2-109E1A

2-108A4A

Abstract: 2-94B1A ) (2-95A1A) 30 TOSHIBA_ [3 ] Package Dimensions Unit: mm 4 - F A
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OCR Scan
2-94B1A 2-108A4A 2-33F1 2-33D1 14-FAST-ON-TAS 2-78A1 2-72A5A 2-93A3A
Abstract: 25°C) Ò O TOSHIBA 2-95A1A CHARACTERISTIC Collector-Emitter Voltage f i o f û .P -
OCR Scan
961001EAA2 100//S
Abstract: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Equivalent Circuit JEDEC EIAJ TOSHIBA â'• â'• 2-95A1A Maximum Ratings Toshiba
Original
000707EAA2

MG200J2YS50

Abstract: 600V 200A igbt MOTOR SPEED CONTROL MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Equivalent Circuit JEDEC JEITA TOSHIBA 2-95A1A Maximum Ratings (Ta = 25
Toshiba
Original
600V 200A igbt MOTOR SPEED CONTROL
Abstract: 2-95A1A CHARACTERISTIC Collector-Emittcr Voltage Gate-Emitter Voltage Collector Current Forward Current -
OCR Scan
C-200A

MG150J2YS50

Abstract: mg150j2y MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed : tf = 0.30µs (Max) (IC = 150A) trr = 0.15µs (Max) (IF = 150A) Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A) Equivalent Circuit JEDEC EIAJ TOSHIBA 2-95A1A Maximum Ratings (Ta = 25
Toshiba
Original
mg150j2y IGBT MG150J2YS50 MG150J2YS diode bridge toshiba
Abstract: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Unit: mm Equivalent Circuit JEDEC EIAJ TOSHIBA 2-95A1A Maximum Ratings (Ta = 25°C) Characteristic Toshiba
Original

mg150j2ys50

Abstract: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case l High input impedance l Includes a complete half bridge in one package l Enhancement-mode l High speed : tf = 0.30µs (Max) (IC = 150A) trr = 0.15µs (Max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A) Equivalent Circuit JEDEC EIAJ TOSHIBA 2-95A1A Maximum Ratings (Ta =
Toshiba
Original
Abstract: JEDEC EIAJ TOSHIBA 2-95A1A G ì E I / C 2 G2 (BX) (B2) MAXIMUM RATINGS (Ta = 25 -
OCR Scan

G150J2YS50

Abstract: MG150J2YS50 2-05.4±O.3 JEDEC_â'" EIAJ â'" TOSHIBA 2-95A1A 1997-03-03 1/5 TOSHIBA MG150J2YS50 ELECTRICAL
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OCR Scan
G150J2YS50

MG200J2YS50

Abstract: tthfTSmj: 91.6±0.5 4 5.7 ±0.5 JEDEC EIAJ TOSHIBA 2-95A1A CHARACTERISTIC SYMBOL RATING UNIT
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OCR Scan
200J2
Abstract: CIRCUIT El o C l E2 E2 JEDEC JilA J TOSHIBA o Ö Ö 2-95A1A G i E l /C 2 G 2 ( B i) (B 2 -
OCR Scan

50J2Y

Abstract: 50J2YS50 E2 JEDEC EIAJ TOSHIBA 2-95A1A CHARACTERISTIC Colleetor-Emitter Voltage Gate-Emitter Voltage
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OCR Scan
50J2YS50 50J2Y

MG150J2YS50

Abstract: 150J2YS50 2-95A1A G ì E I / C 2 G2 (BX ) (B2) M A X IM U M R A T IN G S (Ta = 25°C) CHARACTERISTIC
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OCR Scan
150J2YS50

MG200J2YS50

Abstract: EIAJ TOSHIBA 2-95A1A CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector
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OCR Scan
Abstract: Cl o- JEDEC EIAJ TOSHIBA E2 1 -o 1I G1 E I/C 2 g 2 (Bi) 2-95A1A (B2 -
OCR Scan
100/2S
Abstract: E2 JEDEC EIAJ TOSHIBA 2-95A1A CHARACTERISTIC Colleetor-Emitter Voltage Gate-Emitter Voltage -
OCR Scan
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