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1SS393 Datasheet

Part Manufacturer Description PDF Type
1SS393 Kexin Low Voltage High Speed Switching Original
1SS393 Toshiba shottky barrier diode Original
1SS393 TY Semiconductor Low Voltage High Speed Switching - SOT-323 Original
1SS393 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS393 Toshiba DIODE Scan
1SS393SU,LF Toshiba 1SS393SU - SIMILAR TO 1SS393(TE85L) BUT FACTORY IS CHINA AND PKG SOT-32 Original

1SS393

Catalog Datasheet MFG & Type PDF Document Tags

Schottky Diode Marking sc-70

Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V , 1/3 1SS393 Equivalent Circuit (Top View) Marking 2000-09-14 2/3 1SS393
Toshiba
Original
Schottky Diode Marking sc-70 961001EAA2

1SS393

Abstract: 1SS393 1SS393 : mm : SC-70 : VF (3) = 0.54V () : IR = 5A () (Ta = 25) VRM 45 V VR 40 V IFM 300 * mA IO 100 * mA IFSM 1* A (10ms) P 100 mW Tj 125 °C Tstg , ) 1 2007-11-01 1SS393 2 2007-11-01 1SS393 · · ·
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Original

1SS393

Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating , Test Condition 1 Unit V 2001-06-07 1SS393 Equivalent Circuit (Top View) Marking 2 2001-06-07 1SS393 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original

1SS393

Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol , Forward voltage Test Condition 1 Unit V 2001-06-07 1SS393 Equivalent Circuit (Top View) Marking 2 2001-06-07 1SS393 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original

TA1216

Abstract: i300n TOSHIBA 1SS393 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS393 LOW VOLTAGE HIGH SPEED SWITCHING â'¢ Low Forward Voltage â'¢ Low Reverse Current â'¢ Small Package MAXIMUM RATINGS (Ta = 25°C) VF (3) = 0.54V (TYP.) IR = 5^A (MAX.) SC-70 * : Unit Rating. Total Rating = Unit Rating X 1.5 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 45 V , /2 TOSHIBA 1SS393 IF - vf 300mi 100m IR-VR 5 30m 10m 3m lm 0.3m 0.1m
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OCR Scan
TA1216 i300n

1SS393

Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , Test Condition 1 Unit V 2007-11-01 1SS393 Equivalent Circuit (Top View) Marking 2 2007-11-01 1SS393 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The
Toshiba
Original
Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Maximum (peak) reverse Voltage Average forward current IO 100 * mA Toshiba
Original
Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , Start of commercial production 1995-09 1 2014-03-01 1SS393 Equivalent Circuit (Top View) Marking 2 2014-03-01 1SS393 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its Toshiba
Original

1SS393

Abstract: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , Test Condition 1 Unit V 2007-11-01 1SS393 Equivalent Circuit (Top View) Marking 2 2007-11-01 1SS393 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries
Toshiba
Original
Abstract: 1SS393 TOSHIBA TOSHIBA DIODE 1 SS393 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING â'¢ â'¢ â'¢ Low Forward Voltage Low Reverse Current Small Package VF (3) = 0.54V (TYP.) Ir = 5^A (MAX.) SC-70 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward , FORWARD VOLTAGE 33 POWEll DISSIPATION P (mW) cc S Z -o H ? i-g 2/2 1SS393 -
OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE 1SS393 LO W VOLTAGE HIGH SPEED SWITCHING 1 SS393 SYMBOL RATING 45 40 300* 100* 1* 100 125 -5 5 - 1 2 5 -4 0 - 1 0 0 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm · · · Low Forward Voltage Low Reverse Current Small Package VF (3) = 0.54V (TYP.) Ir = 5^A (MAX.) SC-70 UNIT V V mA mA A mW °C °C °C M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC , Z -o H S ? i-g 1997-05-07 2/2 c 33 H 1SS393 -
OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS393 LO W VOLTAGE HIGH SPEED SWITCHING · · · Low Forward Voltage Low Reverse Current Small Package VF (3) = 0.54V (TYP.) I r = 5//A (MAX.) SC-70 UNIT V V mA mA mW M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Mavirrmin Vnltncrp V dtvj 40 Reverse Voltage VR Maximum (Peak) Forward Current 300* if m Average Forward , to change w itho ut notice. 1997-05-07 1/2 TOSHIBA 1SS393 if - Vf i r - vr -
OCR Scan
Abstract: Product specification 1SS393 Features Low forward voltage:VF(3) = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter S ym bol U nit V RM M axim um (peak) reverse voltage R ating 45 V R everse voltage VR 40 V M axim um (peak) forw ard current IF M 300(*) mA IO P ow er dissipation Junction T em perature mA 1(*) A P S urge current (10 m s) 100(*) IF S M A verage forw ard C TY Semiconductor
Original

1SS393

Abstract: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF(3) = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter S ym bol U nit V RM M axim um (peak) reverse voltage R ating 45 V R everse voltage VR 40 V M axim um (peak) forw ard current IF M 300(*) mA IO P ow er dissipation mA 1(*) A P S urge current (10 m s) 100(*) IF S M A verage forw ard C
Kexin
Original

mg75n2ys40

Abstract: 2N3055 TOSHIBA DF5A6.2LFU 457 1SS392 283 DF3A3.6FU 373 DF5A6.2LJE 459 1SS393 285 DF3A3 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , 10 * 200 * 100 20 10 * 1SS393 100 40 * 300 * 100 5 40 , 1SS294 1SS393 100 40 * 300 * 100 5 40 0.60 100 25 0 R9
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

DF2S6.8UFS

Abstract: SCJ0004N 1SS319 1SS393 1SS392 (1SS423) 1SS396 1SS348 *: *: 19
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

smd diode Lz zener

Abstract: CRS20I30B 1SS383 1SS319 Standard, Independent diodes 1SS393 1SS392 Standard, Common cathode
Toshiba
Original
SCE0004L smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A CRG09 CMG05 CRG01 CRG04 CRG05

CRG09

Abstract: CRH02 ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR 1SS322 1SS393 (1SS423) 1SS294
Toshiba
Original
SCJ0004O CRH02 DF2S3.6SC 1SS416CT CRS13 CMS19 CRS01 CMG06 CMG08 CMG03 U10LC48 CMC02

CMZB220

Abstract: CMS17 ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR VF/IR 1SS322 1SS393
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 SCJ0004R AEC-Q101 CMF03 CMF05 CRF03 CMF02

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 1SS367 1SS378 1SS357 2.0 mm 2.0 mm 1SS372 1SS393 2.0 mm 1SS384 2.9 mm
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Original
TC58V16BFT 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR

LT 543 common cathode

Abstract: CMG03 Improved VF and IR High current, Single Improved VF and IR 1SS322 1SS393 (1SS423) 1SS294
Toshiba
Original
LT 543 common cathode DF2S5.6SC DF3S6.8ECT HEDS 5300 toshiba semiconductor catalog 1SV283B 2010/9SCE0004K
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