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1SS392,LF Toshiba America Electronic Components DIODE ARRAY SCHOTTKY 40V SC59 visit Digikey Buy

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Part : 1SS392(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 3,300 Best Price : $0.9030 Price Each : $1.15
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1SS392 Datasheet

Part Manufacturer Description PDF Type
1SS392 Kexin Low Voltage High Speed Switching Original
1SS392 Toshiba shottky barrier diode Original
1SS392 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original
1SS392 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS392 Toshiba DIODE Scan
1SS392(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 100MA S-MINI Original

1SS392

Catalog Datasheet MFG & Type PDF Document Tags

1SS392

Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating , Forward voltage Test Condition 1 Unit V 2001-06-07 1SS392 Equivalent Circuit (Top View) Marking 2 2001-06-07 1SS392 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original
Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V , 1/3 1SS392 Equivalent Circuit (Top View) Marking 2000-09-14 2/3 1SS392 Toshiba
Original
961001EAA2

1SS392

Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol , Forward voltage Test Condition 1 Unit V 2001-06-07 1SS392 Equivalent Circuit (Top View) Marking 2 2001-06-07 1SS392 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is
Toshiba
Original

TO-236MOD

Abstract: 1SS392 1SS392 1SS392 : mm : SC­59 : VF (3) = 0.54V () : IR = 5A () (Ta = 25°C) VRM 45 V VR 40 V IFM 300* mA IO 100* mA IFSM 1* A (10 m s) P 150* mW Tj 125 °C Tstg , 18 25 pF (TOP VIEW) 1 2007-11-01 1SS392 2 2007-11-01 1SS392 ·
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Original
TO-236MOD sc59 236MOD
Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS392 Unit in mm + 0.5 2.5-0.3 + 0.25 1.5-0.15 LO W VOLTAGE HIGH SPEED SWITCHING · · · Low Forward Voltage Low Reverse Current Small Package CHARACTERISTIC (3) = 0.54V (TYP.) I r = 5//A (MAX.) SC-5 9 VF M A X IM U M RATINGS (Ta = 25°C) SYMBOL V dtvj RATING UNIT V s M a v irrm in ( P p a It Ì R p , w itho ut notice. 1997-05-07 1/2 TOSHIBA 1SS392 if - V f i r - vr FORWARD -
OCR Scan

1SS392

Abstract: TOSHIBA 1SS392 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS392 LOW VOLTAGE HIGH SPEED SWITCHING â'¢ Low Forward Voltage â'¢ Low Reverse Current â'¢ Small Package MAXIMUM RATINGS (Ta = 25°C) VF (3) = 0.54V (TYP.) IR = 5^A (MAX.) SC-59 * : Unit Rating. Total Rating = Unit Rating X 1.5 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT , information contained herein is subject to change without notice. 1997-05-07 1/2 TOSHIBA 1SS392 Ct- vr P
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OCR Scan
Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Maximum (peak) reverse Voltage Average forward current IO 100 * mA Toshiba
Original

1SS392

Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , Test Condition 1 Unit V 2007-11-01 1SS392 Equivalent Circuit (Top View) Marking 2 2007-11-01 1SS392 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries
Toshiba
Original

1SS392

Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , Test Condition 1 Unit V 2007-11-01 1SS392 Equivalent Circuit (Top View) Marking 2 2007-11-01 1SS392 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The
Toshiba
Original

marking code diode 04

Abstract: 1SS392 1SS392 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features · Low forward voltage · Low reverse current 1 2 Marking Code: "ZD" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Forward Current , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 1SS392 SEMTECH
Semtech Electronics
Original
marking code diode 04 Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD
Abstract: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , V Start of commercial production 1994-12 1 2014-03-01 1SS392 Equivalent Circuit (Top View) Marking 2 2014-03-01 1SS392 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation Toshiba
Original

236m

Abstract: TO SHIBA TOSHIBA DIODE 1SS392 LO W VOLTAGE HIGH SPEED SWITCHING 1 SS392 SYMBOL Vr m Vr If m Io SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2.5-0.3 + 0.25 1.5 " 0.15 · · · Low Forward Voltage Low Reverse Current Small Package VF (3) = 0.54V (TYP.) Ir = 5^A (MAX.) SC - 5 9 -e RATING 45 40 300* 100* 1* 150 125 -5 5 - 1 2 5 -4 0 - 1 0 0 UNIT V V mA mA A mW °C , ) REVERSE VOLTAGE 1997-05-07 2/2 1SS392
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OCR Scan
236m T0-236M
Abstract: 1SS392 TO SHIBA TO SHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING + 0.5 2 . 5 - 0 .3 â'¢ â'¢ â'¢ Low Forward Voltage Low Reverse Current Small Package VF (3) = 0.54V (TYP.) Ir = 5^A (MAX.) SC - 5 9 + 0.25 1.5 â' 0.15 M A X IM U M RATINGS (Ta = 25°C) -EE CHARACTERISTIC Maximum (Peak) Reverse , 2/2 1SS392 1997-05-07 -
OCR Scan

1SS392

Abstract: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.54V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current :IR =5 0.55 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM Maximum(Peak) Reverse
Kexin
Original
Abstract: Product specification 1SS392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.54V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current :IR =5 0.55 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM Maximum(Peak) Reverse Voltage 45 V TY Semiconductor
Original

mg75n2ys40

Abstract: 2N3055 TOSHIBA DF5A6.2LFU 457 1SS392 283 DF3A3.6FU 373 DF5A6.2LJE 459 1SS393 285 DF3A3 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , R9 1SS392 0.30 5 40 0 S9 1SS394 0.50 100 * 1SS322 100 40 , 25 0 A9 * 1SS392 150 40 * 300 * 100 5 40 0.60 100 25 , 1SS392 10 * 100 5 100 * 200 0.30 1SS372 20 10 40 0 N9
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

DF2S6.8UFS

Abstract: SCJ0004N 1SS319 1SS393 1SS392 (1SS423) 1SS396 1SS348 *: *: 19
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 1SS374 1SS392 1SS383 1SS377 1SS396 s List of Characteristics of Low V F Type and Standard
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Original
TC58V16BFT 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR

CRG09

Abstract: CRH02 1SS383 1SS392 1SS319 1SS396 1SS348 *: *: 17 2010/1
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 DF2S3.6SC 1SS416CT CRS13 CMG05 CRG04 CRG05

CMZB220

Abstract: CMS17 (1SS423) 1SS294 1SS383 1SS392 1SS319 1SS396 1SS348 *: 17
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 SCJ0004R CMG06 CMG08 CMG03 AEC-Q101 CMC02
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