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1SS32 Datasheet

Part Manufacturer Description PDF Type
1SS321 Kexin Low Voltage High Speed Switching Original
1SS321 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS321 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original
1SS321 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS321 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS321 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS321 Toshiba DIODE Scan
1SS321TE85L Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS321TE85L2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS321TE85LF Toshiba 1SS321TE85LF - Diode Small Signal Schottky 12V 0.05A 3-Pin S-Mini T/R Original
1SS321TE85R Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS321TE85R2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original
1SS322 Kexin Low Voltage High Speed Switching Original
1SS322 Toshiba Diode - Silicon Epitaxial Planar Type Original
1SS322 Toshiba Japanese - Diodes Original
1SS322 TY Semiconductor Low Voltage High Speed Switching - SOT-323 Original
1SS322 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS322 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS322 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS322 Toshiba DIODE Scan
Showing first 20 results.

1SS32

Catalog Datasheet MFG & Type PDF Document Tags

1SS321

Abstract: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF = 0.42V (typ.) Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 12 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 150 , V Marking 1 2001-06-07 1SS321 2 2001-06-07 1SS321 RESTRICTIONS ON PRODUCT
Toshiba
Original
000707EAA

STF12A80

Abstract: BSTC1026 1SS244 1SS271 1SS294 1SS314 1SS319 1SS321 1SS344 1SS349 1SS355 1SS356 1SS357 1SS367 1SS369
Philips Semiconductors
Original
STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16

TPCA*8030

Abstract: lm2804 JDH2S01T MA57 MA57WK MA57WA MA2S077 MA77 MA2S728 MA2S728 MA2J728 1SS315 1SS153 1SS329/330 1SS327/328 1SS316
Toshiba
Original
TPCA*8030 lm2804 TPCA*8036 Sj 88a diode 2SK2033 TPCA8028 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU

marking code 62z

Abstract: philips surface mount zener diode v6 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , 1SS322 2 2007-11-01 1SS322 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The
Hitachi Semiconductor
Original
marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 HVD141/142 HVD141 HVD142 1S2074 HZM24N HZM10N

1SS322

Abstract: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. â'¢ â'¢ â'¢ Unit in mm Low Forward Voltage : Vp = 0.42V (Typ.) Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak , u cto r R e lia b ility H a n d b o o k . 1997 - 05-07 1/2 1SS321 T O SH IB A If - V
Toshiba
Original

2SKI34

Abstract: westinghouse ) (mm) 1SS321 1.25 1.6 (mm) USV 1.6 1.5 2.1 1.25 (mm) ESV 2.9 , ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR 1SS322 1SS393 (1SS423) 1SS294
-
OCR Scan
2SKI34 westinghouse TA8515 TOSHIBA DIODE CATALOG LSI LOGIC product catalog CTC 313 transistor pin diagram J22587 90-3D
Abstract: SCJ0004R (mm) SMQ (SC-61) 2.0 2.1 (mm) (mm) 1SS321 1.25 1.6 (mm) USV , ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR VF/IR 1SS322 1SS393 -
OCR Scan
T0-236M0D

CRG09

Abstract: CRH02 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V (typ.) l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 12 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 150 (*) mA Average forward current IO 50 (*) mA IFSM 1000 (*) mA Power
Toshiba
Original
SCJ0004O TPC6K01 CRG02 CRG07 CRG03 CRG09 CRH02 DF2S3.6SC 1SS416CT CMG07 HMG01

lm2804

Abstract: marking 513 SOD-323 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 â'¢ â'¢ â'¢ 1.25 ± 0.1 3 - 2 -E fl M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction
Toshiba
Original
marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint sot23 2fv 5252 F solar TAH8N401K BCE0030C S-167 BCE0030D

CMZB220

Abstract: CMS17 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low-Voltage High-Speed Switching Low forward voltage: VF = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package: SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VRM 12 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 150* mA , Marking 1 2008-11-11 1SS321 2 2008-11-11 1SS321 RESTRICTIONS ON PRODUCT USE ·
Toshiba
Original
CMG02 CRG01 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CMG05 CRG04 CRG05 CMG06

smd code book

Abstract: transistor SMD P1f ) (mm) 1SS394 1SS378 2.0 1.2 1.6 (mm) 1SS321 USV 1.6 1.5 2.9 2.1 , IR VF IR IR VF VF IR IR VF/IR VF/IR 1SS322 1SS294 (HN2S07T) 1SS383
-
Original
smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 DIODE SMD L4W 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L
Abstract: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features · Low forward voltage · Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 12 V Reverse Voltage VR 10 V Average Forward Current , 1SS321 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company Toshiba
Original
23MOD

Tablet PC R116 schematic

Abstract: qe r524 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS321 Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Reverse Current Small Package VF=0.42V(Typ.) lR=500nA(Max.) SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak Reverse Voltage Reverse Voltage Haximum(Peak Forward Current Average Forward Current Surge Current (t=10ms) Power Dissipation Junction Temperature Storage , 0.42 0.63 3.2 MAX. 1.00 500 4.5 nA PF V UNIT Marking EL 1179 1SS321 1F Vp FORWARD
-
Original
Tablet PC R116 schematic qe r524 swap net ns681680 via vt1634 VT1631 vt8233a T200C/T210C T200V/T210V 71-T2000-004 SI4835 2SD1782K 1N4148
Abstract: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80 -
OCR Scan
Showing first 20 results.