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1SS294 Datasheet

Part Manufacturer Description PDF Type
1SS294 EIC Semiconductor Schottky Barrier Diodes Original
1SS294 Kexin Low Voltage High Speed Switching Original
1SS294 Toshiba DIODE SCHOTTKY DIODE 45V 0.1A 3(1-3G1B) Original
1SS294 Toshiba Diode - Silicon Epitaxial Schottoky Barrier Type Original
1SS294 Toshiba Japanese - Diodes Original
1SS294 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original
1SS294 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS294 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS294 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan
1SS294 Toshiba DIODE Scan
1SS294S,LF Toshiba 1SS294S - X34 PB-F S-MINI SHOTTKY BARRIER DIODE (LF), IFM=300MA Original
1SS294T5LFT Toshiba 1SS294 - Schottky (Diodes & Rectifiers) Diode Original
1SS294T5LT Toshiba 1SS294T5LT - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original
1SS294TE85L Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS294TE85L2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS294(TE85L,F) Toshiba 1SS294 - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original
1SS294TE85R Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS294TE85R2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original

1SS294

Catalog Datasheet MFG & Type PDF Document Tags

1SS294

Abstract: 1SS294 1SS294 : mm : SC-59 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 45 V , Tstg 55125 °C : (//) ( / ) () () 1 2007-11-01 1SS294 (Ta = 25 , CT VR = 0, f = 1MHz 18 25 pF 2 2007-11-01 1SS294 3 2007-11-01 1SS294 · · · · "" · · · ·
Toshiba
Original
236MOD

S3 DIODE schottky

Abstract: S4 DIODE schottky Mark A3 B3 C3 Similar 1S1585 1S1585 1S1585 1SS294 Remarks Anode common Cathode common Series , 1S1585 1SS294 1SS377 2SS2S0 1SS374 1SS377 1S1585 1S158S 1S1585 1S1585 1S1585 FS Schottky barrier Series , EE33 S3 1SS294 Schottky barrier 1SS373 Low VF switching 10 100 S4 1SS367
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OCR Scan
2SA1015 S3 DIODE schottky S4 DIODE schottky common anode schottky diode DIODE MARK B MARK MQ 1SS300 1SS301 1SS302 1SS322 1SS357 1SS370

mg75n2ys40

Abstract: 2N3055 TOSHIBA 1SS272 169 015AZ12 127 02CZ39 133 1SS294 172 015AZ13 127 02CZ43 133 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , 1SS357 1SS294 40 0 S4 1SS367 1SS394 50 3.9 0 A7 1SS406 , 100 5 40 0.6 100 18 0 A9 1SS357 1SS294 ×2 * HN2D01JE 100 80 , 40 300 100 5 40 0.60 100 25 0 S3 1SS294 0.30 5 * 1SS367
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

1SS294

Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , V Marking 1 2001-06-07 1SS294 2 2001-06-07 1SS294 RESTRICTIONS ON PRODUCT
Toshiba
Original
000707EAA

TOSHIBA DIODE

Abstract: 1SS294 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , 2001-06-07 1SS294 2 2001-06-07 1SS294 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original
TOSHIBA DIODE

1SS294

Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 1 2007-11-01 1SS294 2 2007-11-01 1SS294 RESTRICTIONS ON PRODUCT USE 20070701
Toshiba
Original

transistor XM

Abstract: marking 724 diode 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features · Small surface mounting type · Low reverse current · Low forward voltage 3 1 Absolute Maximum Ratings (Ta = 25 OC) Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit Maximum Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Forward Current IO , 1SS294 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company
Semtech Electronics
Original
transistor XM marking 724 diode diode marking code xm Semtech sot-23 marking code
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , information contained herein is subject to change without notice. 2000-09-11 1/2 1SS294 Toshiba
Original
961001EAA2

1SS294

Abstract: TOSHIBA 1SS294 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. â'¢ Low Forward Voltage : Vp (3) = 0.54V (Typ.) â'¢ Low Reverse Current : Ir = 5/^A (Max.) â'¢ Small Package : SC-59 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 45 V Reverse Voltage Vr 40 V Maximum (Peak , 1SS294 IF - vf IR - Vr A /A
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OCR Scan
Abstract: TOSHIBA TOSHIBA DIODE 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2 . 5 - 0.3 + 0.25 1. 5 - 0.15 Low Forward Voltage : Vp (3) = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô E2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum , w itho ut notice. 1997-05-07 1/2 TOSHIBA 1SS294 ip - vf IR - Vr FORWARD -
OCR Scan

1SS294

Abstract: 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. . Low Forward Voltage . Low Reverse Current . Small Package SC-59 SILICON EPITAXIAL PLANAR TYPE Unit in mm V f = 0 .54V(Typ.) lR=5MA(Max.) +0.5 2.5 -0.3 +0.25 1.5-0.15 03 1 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximura(Peak) Forward Current Average Forward Current Power Dissipation , 1SS294
-
OCR Scan
Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SCâ'59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 150 Toshiba
Original

1SS294

Abstract: SOT23 DIODE marking CODE AV Certificate TH97/10561QM 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE SOT-23 PRV : 45 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small surface mounting type Low forward voltage Low reverse current Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 , CHARACTERISTIC CURVES ( 1SS294 ) FIG.1 - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS. FORWARD VOLTAGE
EIC Semiconductor
Original
SOT23 DIODE marking CODE AV

1SS294

Abstract: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 1 2007-11-01 1SS294 2 2007-11-01 1SS294 RESTRICTIONS ON PRODUCT USE · Toshiba
Toshiba
Original
Abstract: 1SS294 TO SHIBA TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.5 2.5-0.3 Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 â'¢ â'¢ â'¢ + 0.25 , 1.5-0.15 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage , VOLTAGE Vf (V) REVERSE CURRENT Ir (A) REVERSE VOLTAGE 1SS294 -
OCR Scan

8D139

Abstract: BLM41AF800SN1 U2 uPC2933T D4 1SS294 SLR-322-MG 1 C7 47uF/16V 3 RESETB C3 47uF/16V POWER 2 D1 1SS294 CP9 0.1uF TTP1 TP1 +3.3V GND TP TTP C2 12pF C1 12pF 3.3v , ,JP1M0, JP2M1 3 2 1 3 2 1 D3 1SS294 D2 1SS294 GND 5v 1 2 RESET 4 , , D3, D4 D 1SS294 4 4 Y1 AT-49(30MHz) 1 5 R1, R3, R4, R9, R12 R
NEC
Original
PD720122 ET-0138 S15829J MNR35P3RJ103 SRA16VB47M 6MCM106MA 8D139 BLM41AF800SN1 Y1 XTAL 30Mhz S16801JJ1V0UM00 S16801JJ1V0UM M5A02 S16685J

RK73K2A

Abstract: omron cp10 SDA 5v R44 10K D2 1SS294 R37 5.6K D1 10k 8 7 6 5 10K C1 2.2uF/16V , C11 10uF/16V C12 0.01uF TP2 5v D5 1SS294 5v 1 2 3 4 1 2 3 U3 IN OUT , 1SS294 Toshiba 5 OMRON 1 IDE 20 QZF-B4LFDG7A2K Honda 1 USB XG8W , D5 1SS294 12 FG FG 4 3 2 1 CN1 UBB-4R-D10T-1 POWER 3 4 FG C14 2.2uF/50V CPU3.3 1 2 8 7 6 5 5v R44 10K D2 1SS294 R37 5.6K CP1 0.1uF
NEC
Original
S16429JJ2V0UM PD720130 RK73K2A omron cp10 GRM40B103K50 SRA16VB22M bpy 79 34-FG ET-0148 PD720130USB2 S16429JJ2V0UM00 S16302J

NMR14

Abstract: XG4C-4031 5 4 3 2 1 3.3V 3.3V 3.3V U2 A0 A1 A2 GND VCC WP SCL SDA D1 1SS294 R1 10k 8 7 6 5 ST M24C32 R3 R4 C2 47 12pF C1 CP1 D R5 1.5k P 1 2 3 4 12pF C3 22uF/16V 10k 0.1uF D N Y1 30MHz 5V 2.5V 3.3V R7 1K R13 2 3 1 4 FG 39(1%) 2.43K(1%) FG 39(1%) R12 FG R11 4 3 2 , 1SS294 DA0 DA2 CS0B CS1B 8 7 6 5 R26 5.6K NMR14 33ohm 1 2 3 4 5 6 7 8 9 10
NEC
Original
BLM21PG600SN1 XG4C-4031 r2533 TANTAL 33-OHM ST M24C32 F/16V VDD25 VDD33 IDED10 IDED11 IDED12
Abstract: TO SHIBA TO SHIBA DIODE 1SS294 LO W VOLTAGE HIGH SPEED SW ITCHING. 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2 . 5 - 0 .3 + 0.25 1 .5 - 0 .1 5 · · · Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage , CURRENT IR (A) REVERSE VOLTAGE 1SS294 -
OCR Scan

XJ8C-0311

Abstract: R3012 5 4 3 SCL 3.3V 3.3V DPC R2 10k R1 10k 10k DPC U2 8 7 6 5 JP5 D JP1 XG8W-0231 2 R3 + + R6 1K 1 1 JP2 XJ8C-0311 3 2 1 3.3V 2 1 2 3 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 D 3.3V M24C32-WBN6 R33 10k XJ8C-0311 CP1 D1 1SS294 0.1uF CMB_STATE R5 1.5k RESET JP4 10k 2 , 8 7 6 5 5.6K R20 1SS294 IDEIORB 82 IDERDY 22 IDEDAKB R22 82 R25
NEC
Original
B3F-1002 R3012 DD10 DD11 DD12 NEC TANTAL PD720133 IDED13 IDED14 IDED15 XG8W-0431

NMR14

Abstract: BLM21PG600SN1 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K C1 47 12pF , INTRQ IOCS16B DA1 10K C4 2.2uF/16V 1 2 3 4 N 1SS294 R26 10K 82 R25 17
-
Original
SML-310DT SML-310VT XG8S-0231 TANTAL 16V Tantal 22uF/16V sw dip-4 SW-DIP XG8T-1031 ET-0182 MAX891L

SMD SOT23 A9

Abstract: diode MARKING A9 Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF(3) = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5 0.55 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM Maximum(Peak) Reverse
Kexin
Original
SMD SOT23 A9 diode MARKING A9 transistor marking A9 Diodes smd A9 1ss294 A9 SOT-23 smd diode a9
Abstract: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF(3) = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5 0.55 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM Maximum(Peak) Reverse TY Semiconductor
Original

1SS281

Abstract: 1SS246 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
-
OCR Scan
1SS239 1SS246 1SS271 1SS276 1SS281 1SS282 1ss237 1SS283 855MH 800MH 1SSZ42

iss319

Abstract: 1SS283 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
-
OCR Scan
1SS285 1SS286 HSR276 iss319 HSM88WA HSR2 1SS28K1 SS281 1SS293 1SS315

1ss237

Abstract: 1SS239 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
-
OCR Scan
1SS365 HRW0203A HSK151 HSM276S 100MH

2933T

Abstract: 6MCM106MA 2933T D4 1SS294 SLR-32 M G 2- 1 C2 12pF C1 12pF R2 47 30M H z Y1 GND , . C7 CP9 47uF/16V 0.1uF 3 RESETB C3 47uF/16V POWER 2 D1 1SS294 VSS C13 CP1 , 1 D3 1SS294 D2 1SS294 A B R4 10K R3 10K L1 DLW31SN900SQ 2 C4 1uF/16V , IC 3.3 V regulator µPC2933T NEC 1 3 D1, D2, D3, D4 D Chip diode 1SS294
NEC
Original
fdd power connector renesas catalogue uPD720122 171826-4 uPD720122GC-9EU AT-049 SLR-322-R BB-15AH TMMS-115-01-F-Q FB-2345B SRA50VB1M S16801EJ1V0UM
Abstract: MCC TM Micro Commercial Components #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; 1SS294 Features â'¢ â'¢ â'¢ â'¢ â'¢ Halogen free available upon request by adding suffix "-HF" Low Current Leakage. Surface Mount SOT-23 Package Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Surface Mount Schottky Barrier Diode 150 mWatt Maximum Ratings â'¢ â'¢ â'¢ Operating Temperature Micro Commercial Components
Original

MCR03EZHJ

Abstract: KDS AT-49 2 1 FG FG 3 3 4 4 FG 1SS294 D2 R 19 5. 6K R 23 10K AVD D , D C3 22uF/ 16V D1 1SS294 3. 3V P 30 N 3. 3V R 28 XG 4C 4031 1 2 3 , A01 Toshiba 3 2 28 D1, D2 Di 1SS294 2 29 CN1 CN QZF-B4LFDG7A2K Honda
NEC
Original
GRM188F11C105Z GRM1882C1H100J MCR03EZHJ KDS AT-49 grm188f11e104z GRM1882C1H GRM1882 ET-0170 PD720133USB2 S17123JJ1V0UM00 S17123JJ1V0UM FB-2471A M106MA

OMRON CP10

Abstract: RK73K2A FG 1 2 3 4 R1 R2 VCC WP SCL SDA 5v R44 10K D2 1SS294 R37 5.6K D1
NEC
Original
omron id 211 INPUT CARD GRM39F104Z25 XG8S-0331 chemi-con catalogue grm39 max789 IDE15 PIO14 PIO15 S16429EJ2V0UM

1S1585

Abstract: 1SS239 Super-Mini Diodes (SOT-23MOD, SOT-143MOD.) Electrical Characteristics (Ta=25°C) Type No. Application V r(V) 80 80 80 80 80 80 80 200 80 40 200 F6 Mark Equivalent other package Type No. 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 Series Remarks IO(mA) 100 100 100 100 100 100 100 trr (ns) 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 107YP 1.6TYP Connection 1SS181 1SS184 1SS187 1SS190 1SS193 1SS196 1SS226 1SS250 1SS272 1SS294 1SS306 1SS307 1SS308 1SS309 1SS311 1SS319 1SS321
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OCR Scan
1SV99 1SS241 1SV103 1SV147 1S1585 equivalent 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SS336 1SS337 1SS344 1SS349 1SS379 HN1D01F

1SS281

Abstract: 1SS237 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
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OCR Scan

1SS281

Abstract: 1SS246 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
-
OCR Scan

diode Z47

Abstract: S360 DIODE - - - - - _ - _ - - - - - 1SS378 1SS372 - 1SS377 1SS374 1SS321 1SS294
-
OCR Scan
02CZ5 diode Z47 S360 DIODE Z3.3 Z5.6 z43 diode HN2D01FU HN2D02FU 1SS362 1SS361 HN1D01FU HN1D02FU

1ss283

Abstract: 1SS281 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
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OCR Scan
HSR277 1SS2371 1SS284

1SS276

Abstract: 1SS281 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
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OCR Scan
p150n

1ss283

Abstract: 495h 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
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OCR Scan
495h HM 1211 3AVF HM55 l497 f30ma EI494

NEC TANTAL

Abstract: Tantal 22uF/16V 5 4 3.3V A0 A1 A2 GND R1 10k 8 7 6 5 VCC WP SCL SDA 2 1 3.3V U2 1 2 3 4 3 3.3V D1 1SS294 R3 ST M24C32 R5 1.5k CP1 10k P 0.1uF R4 47 12pF 12pF C3 22uF/16V Y1 30MHz R6 D N D C2 C1 3.3V 1K DPC 5V 2.5V 3.3V R7 1K R13 2 3 1 4 FG 39(1%) 2.43K(1%) FG 39(1%) R12 FG R11 4 3 2 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1.5K(1
NEC
Original
10uF/16V tantal CP24 LT1761ES5-3.3 DD15 LT1763CS8-2 SSG-ZT-04-0031

high frequency diode

Abstract: 15536-1 1SS321 Sin g le Product 1SS294 T 2 pcs S in g le Product 1SS319 1SS344 1SS187 (40V/0.1A) (20V/0.5A
-
OCR Scan
2SC4116 high frequency diode 15536-1 1SS1 A1873 flowchart RN1421 RN2421 2SC2873 2SA1213 2SC3074 2SC3072

1SS281

Abstract: 1SS283 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
-
OCR Scan
55nF J--31 25MIN

1SS281

Abstract: 1SS283 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5
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OCR Scan
1SS366 SC-70 81MIN 26MAX 35MIN 32MIM 17MAX
Abstract: 47 nF LT1001CS8 47 nF 7 10 k 3 + 6 2 - 1k 10 k 4 1SS294 02CZ2.7-X 100 nF 47 Toshiba
Original
OC-192 STM-64

MCR03EZHJ

Abstract: usb 2.0 to ide cable circuit diagram 1 FG FG 3 4 FG 1SS294 D2 R 19 5. 6K R 23 10K AVD D XJ8C 0311 , . 5k TTP1 I ER ESETB D C3 22uF/ 16V D1 1SS294 3. 3V P N R 28 XG 4C 4031 , Di Chip diode 1SS294 Toshiba 2 29 CN1 CN Connector QZF-B4LFDG7A2K Honda
NEC
Original
usb 2.0 to ide cable circuit diagram MCR03EZHF chip resistor 1608 omron id 211 grm188f11e104 16MCE226MB2TER S17123EJ1V0UM00 S17123EJ1V0UM SLR-322-VR3F SLR-322-MG3F AT-41

2N3904 331 transistor

Abstract: C549 transistor 1SS196 1SS226 1SS239 1SS241 1SS242 1SS250 1SS268 1SS269 1SS271 1SS272 1SS294 1SS295 1SS300 1SS301 1SS302
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OCR Scan
02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124

02CZ2

Abstract: 1SS294 V 100 pF 47 nF LT1001CS8 47 nF 7 10 k 3 + 6 2 - 1k 10 k 4 1SS294 02CZ2.7
Toshiba
Original
O624

connector toshiba 30 PIN

Abstract: 1000 800 600 Fiber LT1001CJ8 47 nF 7 10 k 3 + 6 2 - 1k 10 k 4 100 nF 47 nF 1SS294 02CZ2.7
Toshiba
Original
connector toshiba 30 PIN 3659C-0203

02CZ6

Abstract: 02CZ2 0.5 5 100 5 50 5 MAX. VR(V) 5 5 0.5 Type No. 1SSI 54 1SS239 1SS242 1SS271 1SS294 1SS295 1SS315
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OCR Scan
SS322 diode MARKING CODE A9 46/SMC 5/L4F1 DIODE s32 schottky diode SS181 SS184 SS187 SS190 SS193

2sc 1203

Abstract: 2sa 1300 equivalent 1SS294 1SS321 1SS344 % 1SS3I9 Bias rectification Bias detection Rectification < F o r Low
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OCR Scan
2sc 1203 2sa 1300 equivalent 2Sc1923 equivalent 2SK241 equivalent 2SC 1902 2sc1815 equivalent 1815L 2SC2240 2SC1627 2SC752G 2SC2713 2SC4210

DF2S6.8UFS

Abstract: SCJ0004N IR VF IR IR VF VF IR IR VF/IR VF/IR 1SS322 1SS294 (HN2S07T) 1SS383
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

CRG09

Abstract: CRH02 ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR 1SS322 1SS393 (1SS423) 1SS294
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 DF2S3.6SC 1SS416CT CRS13 CMG05 CRG04 CRG05

CMZB220

Abstract: CMS17 (1SS423) 1SS294 1SS383 1SS392 1SS319 1SS396 1SS348 *: 17
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 SCJ0004R CMG06 CMG08 CMG03 AEC-Q101 CMC02

2fu smd transistor

Abstract: 2FK transistor HN2S06T Low VF Low IR Low IR Low IR 1SS322 1SS294 (HN2S07T) 1SS383 1SS319
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Original
2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE 02CZ2.0 U10LC48 CRF03 CMF02 CMF01 5JUZ47 5GUZ47

015AZ15

Abstract: 015DZ4 1SS322 1SS294 1SS393 1SS392 (1SS423) 1SS396 1SS348 1SS401 (HN2S07T) 1SS383
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Original
015AZ15 015DZ4 1SV283B CRS06 general purpose zener diode 256 Variable Capacitance Diodes CRF02 CMF04 CMF05 1SS154 JDH2S03S JDH2S01FS

smd diode Lz zener

Abstract: CRS20I30B current, Single Improved VF and IR High current, Single Improved VF and IR 1SS322 1SS294
Toshiba
Original
SCE0004L CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A TOSHIBA DIODE CATALOG CMF03

TC7SZ08FU

Abstract: lm2804 150 50 0.63 1.0 100 1SS388 45 1SS357 1SS322 1SS383 HN2S02FU 1SS294 1SS319 40 300 100 0.54 , reverse-connection prevention Memory back-up circuits 1SS293 1SS294 1SS319 1SS322 1SS357 1SS383 1SS388
Toshiba
Original
TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU 3407C-0209

TPCA*8030

Abstract: lm2804 Improved VF and IR High current, Single Improved VF and IR 1SS322 1SS393 (1SS423) 1SS294
Toshiba
Original
TPCA*8030 TPCA*8036 Sj 88a diode 2SK2033 TPCA8028 TPC8037 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU

LT 543 common cathode

Abstract: CMG03 RECTIFIERS 1SS294 RB420DS RB421DS RB425DS 40.0 40.0 40.0 40.0 0.100 0.100 0.100 0.100 0.30
Toshiba
Original
LT 543 common cathode DF2S5.6SC DF3S6.8ECT HEDS 5300 toshiba semiconductor catalog 2sc 5296 2010/9SCE0004K

5000

Abstract: MBR15120 IR High current, Single Improved VF and IR 1SS322 1SS393 (1SS423) 1SS294 (HN2S07T
Micro Commercial Components
Original
5000 MBR15120 DO-41 DO-15 1N5817 1N5818 1N5819 SR102

CMG03

Abstract: DF2S6.8S 50 20 20 10 1SS319 80 5 1SS294 40 5 HN2S02FU 40 5 1SS383 40 , 1SS321 Standard 1SS294 1SS319 1SS322 1SS357 1SS383 1SS388 1SS392 1SS393 1SS396 HN2S02FU
Toshiba
Original
DF2S6.8S toshiba SEMICONDUCTOR GENERAL CATALOG 1SS391 DSR520CT DSF05S30 1SS184 TOSHIBA SCE0004I

lm2804

Abstract: marking 513 SOD-323 % CTCRL Vcc 1K 1% Vcc 0.01µF 10%,10% 3K 1% 7 16 3 11 74HC123A 6 0.1µF 1SS294
Toshiba
Original
marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint sot23 2fv 5252 F solar TAH8N401K BCE0030C S-167 BCE0030D

5252 0.9V 1.5V led driver

Abstract: 5252 F 0.9V 1.5V led driver ) 1SS388 HN2S02JE 1SS357 1SS322 HN2S02FU 1SS383 1SS294 1SS319 Standard Parallel , 30 10 7 5 3 Standard 1SS294 1SS319 1SS322 1SS357 1SS383 1SS388 1SS392 1SS393
Toshiba
Original
5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver 5-pin sot 353 Voltage Regulators tc7wh125 2SK3376TT BCE0030A

BIT 31936

Abstract: TF50KS-E2C 1SS294 105, 107, 153 1SS295 105, 156 1SS295* 101 1S S 3 0 0 107, 153 1SS301 107, 153 1SS302 107, 153
Seiko Instruments
Original
LTPH245 BIT 31936 TF50KS-E2C thermal printer interfacing 52044-2010 horizontal type VECO Thermistor TF50KS-E U00027926850

tb31224cf

Abstract: transistor 2sk1603 NUMBER 1SS294 1SS355 1SS357 1SS372 1SS387 1SS388 1SS389 1SS400 1SS400G 1SS404 2A01 2A02 2A03
Toshiba
Original
tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ SCE0007A

ESM 740

Abstract: transistor SMD t04 51 1SS244 1SS271 1SS294 1SS314 1SS319 1SS321 1SS344 1SS349 1SS355 1SS356 1SS357 1SS367 1SS369
Toshiba
Original
ESM 740 transistor SMD t04 51 D245A transistor SMD t04 Solar Garden Light Controller 4 pin pnp Octal Darlington Transistor Arrays DIP 1020/TL V1022 SCE0003A

SSM3J307T

Abstract: 1000 800 600 Fiber LT1001CJ8 47 nF 7 10 k 3 + 6 2 - 1k 10 k 4 100 nF 47 nF 1SS294 02CZ2.7
Toshiba
Original
SSM3J307T TC75S63TU

Diodes, Inc. Cross Reference Results

Diodes, Inc. Part Industry Part Type
BAT400D 1SS294 Diodes, Inc. Closest

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Industry Part Manufacturer Description Status
BAS40 1SS294 Toshiba High Speed Switching, Clipping and Clamping

NTE Electronics Cross Reference Results

NTE Electronics Part Industry Part
NTE593 1SS294

NXP / Philips Cross Reference Results

NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
1PS59SB10 1SS294
BAT721 1SS294

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
BAS40LT1G 1SS294 Toshiba Close

Toshiba Cross Reference Results

Toshiba Part Industry Part Manufacturer Description Category
1SS294 BAS40 NXP Semiconductors Small signal Schotky barrier diode - S-Mini - SOT-346 Diodes
1SS294 BAS40LT1 On Semiconductor Small signal Schotky barrier diode - S-Mini - SOT-346 Diodes
1SS294 BAS40LT1G On Semiconductor Small signal Schotky barrier diode - S-Mini - SOT-346 Diodes
1SS294 BAS40LT3G On Semiconductor Small signal Schotky barrier diode - S-Mini - SOT-346 Diodes
1SS294 RB420D Rohm Small signal Schotky barrier diode - S-Mini - SOT-346 Diodes
1SS294 RB421D Rohm Small signal Schotky barrier diode - S-Mini - SOT-346 Diodes

Misc. Cross Reference Results

Actual Part Industry Part Description
1SS294 1SS348
1SS294 BAT54FILM