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Part : 1SS286-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 142,733 Best Price : $0.07 Price Each : $0.07
Part : 1SS286TA-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 39,420 Best Price : $0.05 Price Each : $0.05
Part : 1SS286TD-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 284,775 Best Price : $0.05 Price Each : $0.05
Part : 1SS286(TD-E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 1,050 Best Price : $4.66 Price Each : $4.66
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1SS286 Datasheet

Part Manufacturer Description PDF Type
1SS286 EIC Semiconductor Schottky Barrier Rectifiers Original
1SS286 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original
1SS286 Renesas Technology Original
1SS286 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS286 N/A High Frequency Device Data Book (Japanese) Scan
1SS286 N/A The Diode Data Book with Package Outlines 1993 Scan

1SS286

Catalog Datasheet MFG & Type PDF Document Tags

1SS286

Abstract: "1SS286" ADE-208-302(Z) 1SS286 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Rev. 0 Dec. 1994 Features Outline 7 · Very low reverse current. · Detection efficiency is , band Ordering Information Type No. Cathode band Mark 1SS286 Green 7 1. Cathode 2 , direction 1 pulse. 1SS286 -1 10 10 -6 10-2 -3 Reverse current I R (A) Forward , voltage Fig.1 Forward current Vs. Forward voltage 10 10 40 25 1SS286 Unit: mm
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Original
Hitachi DSA0014 band switching diode DO-34

Hitachi DSA002712

Abstract: 1SS286 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode , 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation , group shall unify a multiple of 4 diodes 2 1SS286 10 ­1 10­2 10 ­3 Forward current I F , Fig.2 Reverse current Vs. Reverse voltage 3 1SS286 1.0 f = 1MHz Capacitance C (pF) 10
Hitachi Semiconductor
Original
Hitachi DSA002712 ADE-208-302A

do-34 hitachi

Abstract: very low reverse current 1SS286 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features · Very low reverse current. · Detection efficiency is very good. · Sm all glass package (M H D , - 1 Ordering Information Type No. 1SS286 C athode band 1. Cathode 2. Anode Cathode , diodes Hitacm semiconductor ^ i 1SS286 < cc ~o (0 o LL D O < D u i_ c CC , (V) Fig.3 Capacitance Vs. Reverse voltage 2 1SS286 Package Dimensions Unit: mm 26.0
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OCR Scan
do-34 hitachi very low reverse current ADE-208-242
Abstract: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI A , . Ordering Information Type No. Cathode band M ark Package Code 1SS286 Green 7 MHD Outline ce Cathode band 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25 °C , 200pF, Both forward and C reverse direction pulse. 1 1SS286 HITACHI 3 1SS286 4 HITACHI 1SS286 Package Dimensions Unit: mm 26.0 Min 2.4 Max 26.0 Min O X co cvj -
OCR Scan
DE-208-302A

DSA003641

Abstract: 1SS286 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , Type No. Cathode band Mark Package Code 1SS286 Green 7 MHD 7 Outline 2 1 Cathode band 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item , Rev.1, Sep. 1995, page 2 of 6 1 1SS286 ­1 10 10­2 Forward current I F (A) ­3 10 , (V) 25 Fig.2 Reverse current Vs. Reverse voltage Rev.1, Sep. 1995, page 3 of 6 1SS286
Hitachi Semiconductor
Original
DSA003641 diode hitachi schottky D-85622

1SS286

Abstract: Schottky Barrier Diode for Various Detector, High Speed Switching Features · Very low reverse current. · Detection efficiency is very good. · Sm all glass package (MHD) enables easy mounting and high reliability. Outline =o= Cathode band Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD 1. Cathode 2. Anode , ; Ip > 20jiA * Each group shall unify a multiple of 4 diodes 243 1SS286 Forward voltage VF
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OCR Scan

1SS286

Abstract: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142 , Information Type No. Cathode Mark Package Code 1SS286 Green 7 MHD 7 Pin Arrangement 2 1 Cathode band 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 1SS286 , .10.2003, page 2 of 4 1SS286 Main Characteristics 10­6 10­1 10­3 Reverse current IR (A , ) Fig.2 Capacitance vs. Reverse voltage Rev.2.00, Nov.10.2003, page 3 of 4 1SS286 Package
Renesas Technology
Original
REJ03G0142-0200Z

1SS286

Abstract: products contained therein. 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed , Information Type No. Cathode band Mark Package Code 1SS286 Green 7 MHD 7 Pin Arrangement 2 1 Cathode band 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25 , of 4 diodes Rev.1, Sep. 1995, page 2 of 2 1 1SS286 ­1 10 10­2 Forward current I F , 1SS286 1.0 Capacitance C (pF) f = 1MHz 10 ­1 ­2 10 1.0 10 Reverse voltage VR (V
Hitachi Semiconductor
Original
Abstract: 1SS286 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching ADE-208-302(Z) HITACHI Outline 1 2C Rev. 0 Dec. 1994 Features · Very low reverse current. · Detection efficiency , 3 t Ordering Information Type No. 1SS286 Cathode band Cathode band Green Mark , criterion ; Ir > 20|jA Each group shall unify a multiple of 4 diodes 1SS286 10 10 -6 < L L C , ) Fig.3 Capacitance Vs. Reverse voltee 1SS286 Package Dimensions Unit: mm 26.0 Min 2.4 -
OCR Scan

1SS286

Abstract: 1SS286 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : · Very Low IR · Low VF and high efficiency. · Pb / RoHS Free 1.00 (25.4) min. 0.063 (1.6 )max. 0.119 (3.04) max. Cathode Mark MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g 1.00 (25.4) min. 0.022 (0.55)max. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter , CHARACTERISTIC CURVES ( 1SS286 ) Forward Current VS. Forward Voltage 10 Reverse Current VS. Reverse
EIC Semiconductor
Original

1SS286

Abstract: TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1SS286 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : â'¢ Very Low IR â'¢ Low VF and high efficiency. â'¢ Pb / RoHS Free 1.00 (25.4) min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g 1.00 (25.4) min. 0.017 (0.43)max , ( 1SS286 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage 10-1 10-6
EIC Semiconductor
Original

1SS286

Abstract: TH97/10561QM 1SS286 TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : · Very Low IR · Low VF and high efficiency. · Pb / RoHS Free 1.00 (25.4) min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g 1.00 (25.4) min. 0.017 (0.43)max. Dimensions in inches and , TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1SS286 ) Forward Current VS. Forward Voltage
EIC Semiconductor
Original

1SS286

Abstract: GRZZ0002ZC-A 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142 , Part No. Cathode Mark Package Name Package Code 1SS286 GREEN 7 MHD , .3.00 May 24, 2007 Page 1 of 4 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , , 2007 Page 2 of 4 V Test Condition IF = 10 mA 1SS286 Main Characteristic 10­6 10­1 , .3.00 May 24, 2007 Page 3 of 4 1SS286 Package Dimensions JEITA Package Code RENESAS Code
Renesas Technology
Original
GRZZ0002ZC-A REJ03G0142-0300

1SS286

Abstract: GRZZ0002ZC-A . 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142-0300 Rev , . Cathode Mark Package Name Package Code 1SS286 GREEN 7 MHD GRZZ0002ZC-A 7 Pin , of 4 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Reverse voltage VR , Test Condition IF = 10 mA 1SS286 Main Characteristic 10­6 10­1 10­3 Reverse current , Page 3 of 4 1SS286 Package Dimensions JEITA Package Code RENESAS Code GRZZ0002ZC-A L
Renesas Technology
Original

HVU12

Abstract: HSM126S 1SS88 1SS106 1SS108 MHD 1SS165 1SS174 155198 155199 1SS286 "2 GaAs System Protection Diode
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1S2076A 1SS86 HSM126S HVU12 HVC308A HSK277 DO-35 rectifier HSM8 pin diode do35 pn junction diode application DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C

1SS281

Abstract: 1SS283 . 5 25 0. 5 1 0 771 1SS285 am 70 70 15 15 15m 15 1 0. 2 50 1. 5 2. 0 0 771 1SS286 Bi 25 35
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OCR Scan
1SS239 1SS246 1SS271 1SS276 1SS281 1SS282 1SS283 855MH 800MH 1SSZ42

1SS281

Abstract: 1SS246 . 5 25 0. 5 1 0 771 1SS285 am 70 70 15 15 15m 15 1 0. 2 50 1. 5 2. 0 0 771 1SS286 Bi 25 35
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OCR Scan
HSK151 HSR276 1ss237 1SS28K1 SS281 1SS293 1SS315 1SS365 HRW0203A

iss319

Abstract: 1SS283 . 5 25 0. 5 1 0 771 1SS285 am 70 70 15 15 15m 15 1 0. 2 50 1. 5 2. 0 0 771 1SS286 Bi 25 35
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OCR Scan
iss319 HSM88WA HSR2 iSS295 HSM276S 100MH

1ss237

Abstract: 1SS239 . 5 25 0. 5 1 0 771 1SS285 am 70 70 15 15 15m 15 1 0. 2 50 1. 5 2. 0 0 771 1SS286 Bi 25 35
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OCR Scan

1ss283

Abstract: 495h . 5 25 0. 5 1 0 771 1SS285 am 70 70 15 15 15m 15 1 0. 2 50 1. 5 2. 0 0 771 1SS286 Bi 25 35
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OCR Scan
495h HM 1211 1SS284 3AVF HM55 l497 EI494

1SS106

Abstract: 1SS172 Type No. 1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS86 1SS88 1SS106 1SS108 1SS1I0 1S S 118 1SS119 1SS120 1SS1S2 1SS165 1SS172 1SS174 1SS197 1SS198 1SS199 1SS270 1SS270A 1SS277 1SS286 HRB0103A HRB0103B HRC0202A HRF22 HRF32 HRF302A HRF502A HRF503A HRP22 HRP32 HRU0103A HRU0203A HRU0302A HRW26 HRW26F HRW34 HRW34F HRW36 HRW36F HRW37F HRW0202A HRW0202B HRW0203A HRW0302A HRW0502A Page Package code 6 6 6 6 6 6 6 6 6 5 6 6 6 6 5 6 6 6 5 6 6 6 5 6 6 6 6 5 6 7 7 7 7 7 7 7 7 7 7
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OCR Scan
DO-41 DO-214 HRW0503A HRWO702A HRW0703A HRW1002A
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