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1SS198 Datasheet

Part Manufacturer Description PDF Type
1SS198 EIC Semiconductor Schottky Barrier Diode Original
1SS198 Hitachi Semiconductor SILICON SCHOTTKY BARRIER DIODE FOR VARIOUS DETECTO Original
1SS198 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original
1SS198 Renesas Technology Diode, Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original
1SS198 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS198 N/A High Frequency Device Data Book (Japanese) Scan
1SS198 N/A The Diode Data Book with Package Outlines 1993 Scan

1SS198

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features · Detection efficiency is very good. · Small temperature coefficient. · Small glass package (MHD) enables easy mounting and high reliability. Outline = 0 = -C M - Ji_ Cathode band Ordering Information Type No. 1SS198 Cathode band G reen Mark 2 Package Code MHD 1. Cathode 2. Anode , criterion ; Ipj > 140|iA at V p = 6V 239 1SS198 0 Forward voltage VF (V) 2 4 6 8 10 -
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Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching ADE , glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 , 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction , forward and reverse direction 1 pulse. Note: Failure criterion; IR 140uA at VR = 6V 2 1SS198 , ) 10 Fig.2 Reverse current Vs. Reverse voltage 3 1SS198 f = 1MHz 10 Capacitance C (pF Hitachi Semiconductor
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Hitachi DSA002712 ADE-208-298A DO-34
Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching ADE , glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 , 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction , forward and reverse direction 1 pulse. Note: Failure criterion; I R 140uA at VR = 6V 1SS198 10 , ) 10 Fig.2 Reverse current Vs. Reverse voltage 1SS198 f = 1MHz 10 Capacitance C (pF) 1.0 Hitachi Semiconductor
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Hitachi DSA002788
Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching HITACHI , . Ordering Information Type No. Cathode band M ark Package Code 1SS198 Green 2 MHD Outline ce CM Cathode band 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25 °C , > 140^iA at V R= 6V HITACHI CO II tr Note: > Sym bol > Item 1SS198 HITACHI 3 1SS198 4 HITACHI 1SS198 Package Dimensions Unit: mm 26.0 Min 2.4 Max 26.0 -
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Abstract: . 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0126 , Information Type No. Cathode Mark Package Code 1SS198 Green 2 MHD 2 Pin Arrangement 2 1 Cathode band 1. Cathode 2. Anode Rev.2.00, Oct.23.2003, page 1 of 4 1SS198 , .2.00, Oct.23.2003, page 2 of 4 1SS198 Main Characteristics 10­2 10­2 10­3 Reverse current , .2 Capacitance vs. Reverse voltage Rev.2.00, Oct.23.2003, page 3 of 4 1SS198 Package Dimensions As of Renesas Technology
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D-85622
Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , Type No. Cathode Mark Package Code 1SS198 Green 2 MHD 2 Outline 2 1 Cathode band 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , at VR = 6V Rev.1, Oct. 1998, page 2 of 5 1SS198 Main Characteristic -1 10 10 -2 , Vin (Vrms) Fig.4 Rectifier efficiency Vs. Input voltage Rev.1, Oct. 1998, page 3 of 5 1SS198 Hitachi Semiconductor
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hitachi rectifier diode hitachi schottky DSA003641
Abstract: ADE-208-298(Z) 1SS198 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Rev. 0 Dec. 1994 Features Outline 2 · Detection efficiency is very good. · Small , Cathode band Ordering Information Type No. Cathode band Mark 1SS198 Green 2 1 , =200pF , * Failure criterion ; IR 140uA at VR = 6V Both forward and reverse direction 1 pulse. 1SS198 -1 , Vin (Vrms) Fig.4 Rectifier efficiency Vs. Input voltage 3.0 1SS198 Unit: mm Package -
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Hitachi DSA0014
Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0126 , Information Type No. Cathode Mark Package Code 1SS198 Green 2 MHD 2 Pin Arrangement 2 1 Cathode band 1. Cathode 2. Anode Rev.2.00, Oct.23.2003, page 1 of 4 1SS198 , .2.00, Oct.23.2003, page 2 of 4 1SS198 Main Characteristics 10­2 10­2 10­3 Reverse current , .2 Capacitance vs. Reverse voltage Rev.2.00, Oct.23.2003, page 3 of 4 1SS198 Package Dimensions As of Renesas Technology
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REJ03G0126-0200Z
Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE , Type No. Cathode Mark Package Code 1SS198 Green 2 MHD 2 Outline 2 1 Cathode band 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 140uA at V R = 6V 1SS198 Main Characteristic -1 10 10 -2 Reverse current I R (A , ) Fig.4 Rectifier efficiency Vs. Input voltage 3 1SS198 Package Dimensions 2.4 Max 26.0 Hitachi Semiconductor
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Hitachi DSA00340
Abstract: ADE-208-298(Z) 1SS198 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features · Detection efficiency is very good. · Small temperature coefficient. · Sm all glass , CM 3-C Ordering Information Type No. 1SS198 Cathode band Cathode tond Green Mark , > 140pA at V r = 6V 1SS198 10' ' 10 -2 Forward current lF (A) < cc c 10 -3 CC , . Input voltage 1SS198 Package Dimensions Unit: mm 26.0 Min 2.4 M ax_ 26.0 Min O -
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Abstract: products contained therein. 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed , Information Type No. Cathode Mark Package Code 1SS198 Green 2 MHD 2 Pin Arrangement 2 1 Cathode band 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25 , . Failure Criterion ; IR 140uA at VR = 6V Rev.1, Oct. 1998, page 2 of 2 1SS198 Main Characteristic , . 1998, page 3 of 3 1SS198 Package Dimensions 2.4 Max 26.0 Min 1 0.4 2 2.0 Hitachi Semiconductor
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Abstract: 1SS198 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features · Detection efficiency is very good. · Small temperature coefficient. · Sm all glass package (M H D , i- 1 CM Ordering Information Type No. 1SS198 Cathode band 1. Cathode 2. Anode , aü îiiiill Hitachf semiconductor ^ 1SS198 IT c C D 3 O < D < /> V LL o a , .3 Capacitance Vs. Reverse voltage Fig.4 Rectifier efficiency Vs. Input voltage 2 1SS198 Package -
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do-34 hitachi
Abstract: TH97/10561QM 1SS198 TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : · Low forward voltage · High breakdown voltage · Guard ring protected · Hermetically-sealed leaded glass package · Low diode capacitance. · Pb / RoHS Free 1.00 (25.4) min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA : Case: DO-34 Glass Case Weight , TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1SS198 ) Forward EIC Semiconductor
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diode led ir
Abstract: 1SS198 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : · Low forward voltage · High breakdown voltage · Guard ring protected · Hermetically-sealed leaded glass package · Low diode capacitance. · Pb / RoHS Free 1.00 (25.4) min. 0.063 (1.6 )max. 0.119 (3.04) max. Cathode Mark MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g 1.00 (25.4) min. 0.022 (0.55)max , CHARACTERISTIC CURVES ( 1SS198 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage EIC Semiconductor
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Diode Capacitance
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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1S1659 1S1858 1S1860 1S1992 1S1993 1S1994 1SS99 1ss97 1SS14 1S1995 1S2211 1SS106 890MH
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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1S2198 1S2203 1S2210 1SS16 1SS98 1SS101 1SS69 1SS43 3060MH 1SS13 9375MH
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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1SS228 1SS237 DAP 7a 1ss70 iss99 1SS15 1SS108 1SS125 1SS151 1SS165
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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1SS90 RT8059 ISS90 1SS88 855MH
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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1ss87
Abstract: Type No. 1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS86 1SS88 1SS106 1SS108 1SS1I0 1S S 118 1SS119 1SS120 1SS1S2 1SS165 1SS172 1SS174 1SS197 1SS198 1SS199 1SS270 1SS270A 1SS277 1SS286 HRB0103A HRB0103B HRC0202A HRF22 HRF32 HRF302A HRF502A HRF503A HRP22 HRP32 HRU0103A HRU0203A HRU0302A HRW26 HRW26F HRW34 HRW34F HRW36 HRW36F HRW37F HRW0202A HRW0202B HRW0203A HRW0302A HRW0502A Page Package code 6 6 6 6 6 6 6 6 6 5 6 6 6 6 5 6 6 6 5 6 6 6 5 6 6 6 6 5 6 7 7 7 7 7 7 7 7 7 7 -
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DO-35 DO-41 DO-214 HRW0503A HRWO702A HRW0703A
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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7A SF SC 30 7A SF sc 7A SF 32MAX 53MIN 03MAX SC-10 10-32UNF-2A SC-10U
Abstract: 50 0. 5 0. 9 1. 2 0. 5 79F 1SS198 BiL 10 30 4. 5 1 70 6 1. 5 1 ri >70« (f=40MHz) 79F -
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1S185 1SS78 25MIN 26MIN
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