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1SS187,LF Toshiba America Electronic Components Switching Diodes visit Digikey

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1SS187 Datasheet

Part Manufacturer Description PDF Type
1SS187 EIC Semiconductor High Speed Switching Diodes Original
1SS187 Galaxy Semi-Conductor Holdings Surface mount switching diode Original
1SS187 Kexin Ultra High Speed Switching Application Original
1SS187 Shenzhen Yongerjia Electronic Switching Diode Original
1SS187 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1D) Original
1SS187 Toshiba Japanese - Diodes Original
1SS187 Transys Electronics Plastic-Encapsulated Diodes Original
1SS187 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original
1SS187 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SS187 N/A The Diode Data Book with Package Outlines 1993 Scan
1SS187 Toshiba Toshiba Shortform Catalog Scan
1SS187 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan
1SS187T5LFT Toshiba 1SS187 - DIODE ULTRA HS 85V 100MA SC-59 Original
1SS187T5LT Toshiba 1SS187T5LT - Diode Switching 85V 0.1A 3-Pin S-Mini Original
1SS187TE85L Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS187TE85L2 Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS187(TE85L,F) Toshiba 1SS187 - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original
1SS187TE85R Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original
1SS187TE85R2 Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original

1SS187

Catalog Datasheet MFG & Type PDF Document Tags

1SS187

Abstract: 1SS187 1SS187 : : : : : mm SC-59 VF = 0.92V () trr = 1.6ns () CT = 2.2pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1D VR 80 V IFM , ) (//) ( /) () () 1 2007-11-01 1SS187 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS187 1. (trr) 3 2007-11-01 1SS187 ·
Toshiba
Original

1SS187

Abstract: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum , V µA Marking 1 2001-06-07 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS187 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
Abstract: Product No. 1SS187-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel , ' suffix to part number above. For example, 1SS187-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS187 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High , . Revision: April, 2012 www.wontop.com 1 ® 1SS187 WON-TOP ELECTRONICS Electrical , ® 1SS187 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) D3 D3 Won-Top Electronics
Original
MIL-STD-202 3000/T
Abstract: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , @t=10ms Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS187 Units V V mA mA A mW 85 80 300 100 2 150 125 , -2010, KSYR07 RATING AND CHARACTERISTIC CURVES 1SS187 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Device Marking : Device P/N 1SS187 Marking D3 Equivalent Circuit Diagram Lite-On Lite-On Semiconductor
Original
J-STD-020D 2002/95/EC

marking C3 sot-23

Abstract: 1SS226 c3 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Maximum Ratings (TJ , Eqivalent Circuit diagram 1 2 1 2 1SS181 A3 3 1SS184 B3 3 1SS187 D3 3 1
Weitron
Original
1SS190 1SS193 1SS196 1SS226 marking C3 sot-23 1SS226 c3 top marking c3 sot23 MARKING B3 SOT-23 1SS184B3 1SS181/1SS184/1SS187

sot-23 DIODE marking code D3

Abstract: Marking Code D3 1SS187 SILICON EPITAXIAL PLANAR DIODE Features · Small package · Low forward voltage · Fast reverse recovery time · Small total capacitance 3 1 2 Marking Code: D3 SOT-23 Plastic Package Applications · Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/01/2008 1SS187 SEMTECH
Semtech Electronics
Original
sot-23 DIODE marking code D3 Marking Code D3 DIODE marking code D3 sot-23 marking code

sot-23 DIODE marking code D3

Abstract: sot 23-5 marking code BL Galaxy Electrical Production specification Surface mount switching diode 1SS187 , INFORMATION Type No. Marking 1SS187 Package Code D3 SOT-23 MAXIMUM RATING @ Ta=25 unless , switching diode Production specification 1SS187 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise , Production specification Surface mount switching diode 1SS187 PACKAGE OUTLINE Plastic surface , SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 1SS187 SOT
BL Galaxy Electrical
Original
sot 23-5 marking code 0-37G d3 sot23 BL/SSSDC003

J-STD-020D

Abstract: 1SS187 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 , otherwise specified Characteristic Symbol 1SS187 Units Non-Repetitive Peak Reverse Voltage , nS REV. 3, Oct-2010, KSYR07 RATING AND CHARACTERISTIC CURVES 1SS187 Fig.1 Typical Forward , .4 Reverse Recovery Time vs. Forward Current Device Marking : Device P/N 1SS187 Marking D3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS187 Important Notice and Disclaimer LSC
Lite-On Semiconductor
Original
Abstract: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , VR IFM IO IFSM PD TJ TSTG 1SS187 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS187 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , Marking : Device P/N 1SS187 Marking D3 Equivalent Circuit Diagram Lite-On Semiconductor Lite-On Semiconductor
Original

TO-236MOD

Abstract: 1SS187 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , . 2000-09-13 1/2 1SS187 Fig.1 Reverse recovery time (trr) test circuit 961001EAA2' · The
Toshiba
Original
TO-236MOD

1SS187

Abstract: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse , 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS187 RESTRICTIONS ON
Toshiba
Original

1SS187

Abstract: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ , V mA Marking 1 2001-06-07 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS187 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original

1SS187

Abstract: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute , 1 2007-11-01 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS187 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is
Toshiba
Original

1SS187

Abstract: DIODE ED 16 TOSHIBA 1SS187 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS187 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) Ijr = 1mA â'" 0.61 â'" V VF (2) IF = 10mA â'" 0.74 â'" VF (3) IF = 100mA â'" 0.92 1.20 Reverse Current !R(1) VR = 30V â'" â'" 0.1 juA Vr = 80 V â'" â , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS187 If - VF ir - vr < fa 100m 10m lm 100/u 10 p
-
OCR Scan
DIODE ED 16

1SS187

Abstract: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:D3 ELECTRICAL CHARACTERISTICS o (Ta , . Http:// www.wej.cn f=1MHz V E-mail:wej@yongerjia.com A 1SS187 Typical
WEJ Electronic
Original
Abstract: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current Toshiba
Original

1SS187

Abstract: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:D3 ELECTRICAL CHARACTERISTICS o (Ta , 1SS187 Typical Characteristics IF - VF IR - VR 10 1 REVERSE CURRENT I R (A) FORWARD
WEJ Electronic
Original

1SS187

Abstract: Marking Code D3 Certificate TH97/10561QM 1SS187 SILICON EPITAXIAL PLANAR DIODE SOT-23 PRV : 85 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small package Low forward voltage Fast reverse recovery time Small total capacitance Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 , TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES( 1SS187 ) FIG.1 -
EIC Semiconductor
Original
SOT23 DIODE marking CODE AV

marking d3

Abstract: 1SS187 Switching Diodes SOT-23 1. CATHODE 2. N.C. 3. ANODE Features Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 Maximum Ratings @TA=25 Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Symbol VRM VR IFM IO PD TJ TSTG Dimensions in inches and (millimeters) Limits 85 80 300 100 150 125 -55-125 Unit V V mA mA mW , =1mA IF=10mA IF=100mA VR=30V VR=80V VR=0,f=1MHz IF=IR=10mA,Irr=0.1×IR Conditions 1SS187 Switching
-
Original
marking d3
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: D3· 1 3 2 Maximum Ratings @Ta=25â"ƒ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage VRM 85 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM , =0.1×IR A,Jun,2011 Typical Characteristics Forward 100 Characteristics 1SS187 Reverse 1000 Jiangsu Changjiang Electronics Technology
Original

TO-236MOD

Abstract: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS187 1SS18 7 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. + 0.5 2 .5 - 0 . 3 Unit in mm ,1 .5 - 0.15 + 0.25 Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vjr (3) = 0.92V (Typ.) : tj* ^ i.öns (Typ.) ; CVf1-2,2pF (Typ,) -e p ö o +I CHARACTERISTIC Maximum (Peak) Reverse Voltage , n d b o o k . 1997 - 05-07 1/2 TOSHIBA 1SS187 ip - v f IR - Vr REVERSE
-
OCR Scan
Abstract: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 â'¢ â'¢ â'¢ â'¢ Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp (3) = 0.92V (Typ.) : trr= 1.6ns (Typ.) : CT = 2.2pF (Typ.) M A X IM U M RATINGS (Ta = 25Â , u cto r R e lia b ility H a n d b o o k . 1997 - 05-07 1/2 TO SHIBA 1SS187 If - -
OCR Scan
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