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Part : XQ7K325T-1RF676I Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €2183.00 Price Each : €2183.00
Part : XQ7K325T-L1RF676M Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €3729.00 Price Each : €3729.00
Part : XQ7K410T-1RF676I Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €3162.00 Price Each : €3162.00
Part : XQ7Z030-1RF676I Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €563.4900 Price Each : €563.4900
Part : XQ7Z030-1RF676Q Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €704.69 Price Each : €704.69
Part : XQ7Z045-1RF676I Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €2699.00 Price Each : €2699.00
Part : XQ7Z045-1RF676Q Supplier : Xilinx Manufacturer : Avnet Stock : - Best Price : €3374.00 Price Each : €3374.00
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1RF640

Catalog Datasheet MFG & Type PDF Document Tags

1RF640

Abstract: 1RFZ44 IRF634 1RFZ44 IRF630 IRF540 1RF640 IRF644 IRF740 IRF840 IRFP44S 1RFZ14 IRFBG30 IRF624 IRF510 IR F6I0
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OCR Scan
1RFC430 IRFCE30 IRFC230 1RFBE30 IRFC214 equivalent irf840 irf540 equivalent IRFBg30 equivalent IRFC048 IRFCE40 1RFCC30 IRFCF30

1RF640

Abstract: 1rf630 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N 200 ±20 18 125 ±500 ±20 250 200 2.0 4.0 0. 25 0. 18 , TO-220 1RF640 SAMSUNG N 200 0. 18 18 TO-220 IRF641 SAMSUNG N 150 0. 18
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OCR Scan
1RF522 RF523 IRF530 IRF532 IRF533 IRF541 1rf630 IRF810 1RF633 1RF634 1rf740 IRF53I

1RFD110

Abstract: 1RF840 - 275 - m. s tt « f t » h ® * £ m (Taz25cC) m m 6 Vgs (V) (ma) Vds (V) Id («a) Vgs (V) Id (a) *typ (A) Vgs (V) *typ (S) Id (A) Vds (V) 1RF640 MOT N 200 ±20 18 125 ±100 ±20 250 200 2 4 0.25 0.18 10 10 18 10 6.0 10
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OCR Scan
1RF643 IRF720 IRF731 IRFP120 IRFP150 IRFP220 1RFD110 1RF840 IRFA1Z0 IRFP230 1RF9641 1RF642 T0-220AB RF722

1RF640

Abstract: IRF640 ge 1RF640/D84EN2 IRF641/D84EM2 UNITS Drain-Source Voltage VdSS 200 150 Volts Drain-Gate Voltage, Rqs = 1MO
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OCR Scan
IRF640 IRF640 ge d84en2 f640 TRANSISTOR T0220A8 D64EN2 1RF640/D84EN2

1RF640

Abstract: 1rf740 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N 200 ±20 18 125 ±500 ±20 250 200 2.0 4.0 0. 25 0. 18 , ) 1RF640 MOT N 200 ±20 18 125 ±100 ±20 250 200 2 4 0.25 0.18 10 10 18 10 6.0 10 1600 750 300 25 TO , 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N 200 0. 18 18 TO
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OCR Scan
IRF542 IRF543 IRF612 1RF540 IRFAE50 IRF610 IRF613 IRF620 1RF621

1rf740

Abstract: 1RF642 ) (ma) Vds (V) Id («a) Vgs (V) Id (a) *typ (A) Vgs (V) *typ (S) Id (A) Vds (V) 1RF640 MOT N 200 , 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N 200 0. 18 18 TO
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OCR Scan
IRF643 IRF711 IRF712 IRF721 1rf730 1RF645 IRF72

1rf520

Abstract: 1RF540 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N 200 ±20 18 125 ±500 ±20 250 200 2.0 4.0 0. 25 0. 18
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OCR Scan
1RF620 1rf520 1404Z irf610 samsung IRF513 1RF520 IRF521 IRF622 IRF523 IRF531

1RFD110

Abstract: 1rf840 - 275 - m. s tt « f t » h ® * £ m (Taz25cC) m m 6 Vgs (V) (ma) Vds (V) Id («a) Vgs (V) Id (a) *typ (A) Vgs (V) *typ (S) Id (A) Vds (V) 1RF640 MOT N 200 ±20 18 125 ±100 ±20 250 200 2 4 0.25 0.18 10 10 18 10 6.0 10
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OCR Scan
IRF9613 1RF741 IRF9141 IRF9523 1RF732 1RF733 IRF9513 T0-220 IRF9520 1RF9521
Abstract: Drain-Source Breakdown Voltage 1RF640/642, IRF640R/642R IRF641/643, IRF641R/643R Gate Threshold Voltage -
OCR Scan
QDS4033 F640/641/642/643 F640R

1rf740

Abstract: 1RF840 0.45 8.1 TO-220 1RF635 SAMSUNG N 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N
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OCR Scan
IRF645 1rf820 IRF112 irf712 to220 IRF642 IRF710 IRF713 1RF720 IRF722

1rf730

Abstract: 1rf740 0.45 8.1 TO-220 1RF635 SAMSUNG N 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N
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OCR Scan
1RF711 IRFI13 IRF820 IRF821 IRF822 IRF823 IRF830 IRF831

1rf740

Abstract: 1RF840 > Vgs (V) (ma) Vds (V) Id («a) Vgs (V) Id (a) *typ (A) Vgs (V) *typ (S) Id (A) Vds (V) 1RF640 , 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N 200 0. 18 18 TO
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OCR Scan
irf9620 IRF9640 IRF832 IRF833 IRF841 IRF842 IRF843

1RF630

Abstract: irf810 ±500 ±20 250 250 2.0 4.0 0. 25 5. 68 10 4. 1 6. 5 10 2. 9 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N , 0.45 8.1 TO-220 1RF635 SAMSUNG N 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N
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OCR Scan
SD210 TD-12 SD211 SD212 BS107PT 1RF530 RF543 ferranti BS250F S0213 S0214

IRF8C30

Abstract: 1RF640 (A) Vds (V) 1RF640 MOT N 200 ±20 18 125 ±100 ±20 250 200 2 4 0.25 0.18 10 10 18 10 6.0 10
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OCR Scan
IRFAF50 IRFAF52 IRFAG50 IRF8C30 IRFBC32 1RFBC40 IRFD9010 1RFAG40 1RFAG42 T0-204AA

1RF640

Abstract: 1RF640S and soldering techniques refer to application note #AN-994. 221 1RF640S_ Electrical Characteristics @ , '" - â'" 62 215 1RF640 I«R Electrical Characteristics @ Tj = 25°C {unless otherwise specified , (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 225 1RF640S I«R Vary tp
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OCR Scan
IRF640S 3V IC LINEAR SMD irf640a RD540 IRF640 applications note ov5s IRF640 smd

IRF9120

Abstract: 1rf740 ) (ma) Vds (V) Id («a) Vgs (V) Id (a) *typ (A) Vgs (V) *typ (S) Id (A) Vds (V) 1RF640 MOT N 200
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OCR Scan
IRF9120 IRF9223 IRF9122 IRF9121 1rf830 l 9143 TQ-220AB

1RF540

Abstract: 1RF620 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N 200 ±20 18 125 ±500 ±20 250 200 2.0 4.0 0. 25 0. 18
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OCR Scan
IRF614 1RF623 IRF631 IRF632

1rf730

Abstract: IRF9120 ) 1RF640 MOT N 200 ±20 18 125 ±100 ±20 250 200 2 4 0.25 0.18 10 10 18 10 6.0 10 1600 750 300 25 TO
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OCR Scan
IRF9130 IRF9131 IRF9132 IRF9140 IRF9142 1rf9530 IRF9512 1RF842 IRF9I33

1RF530

Abstract: 1RF540 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N 200 ±20 18 125 ±500 ±20 250 200 2.0 4.0 0. 25 0. 18
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OCR Scan

1RF620

Abstract: 1RF630 ±500 ±20 250 250 2.0 4.0 0. 25 5. 68 10 4. 1 6. 5 10 2. 9 4. 1 600* 180* 52* 25 TO-220AB 1RF640 IR N
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OCR Scan
IRF625 1RF521 SB217 T0-92

MVA generator

Abstract: RXPE 40 0.45 8.1 TO-220 1RF635 SAMSUNG N 250 0. 68 6. 5 TO-220 1RF640 SAMSUNG N
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OCR Scan
MVA generator RXPE 40 5 MVA generator RXPE 4 5 MVA synchronous machine 5 MVA generator synchronous 01D5-AB- U9-12 0105-AB
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