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1N916AM SynSemi Semiconductor
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Abstract: ) 5YM5EMI SEMICONDUCTOR_ 1N916A 1N916A - DO -35 Axial -I eaded Pack age 1N916AM - DO -34 Axial -I eaded Pack age LL916A LL916A - LL-34 LL-34 Surface Mount Package Device Electrical Characteristics (ta = 25°c unless otherwise noted.) Symbol Parameter Test Condition Limits Unit Min Max Bv Breakdown Voltage lp=5pA 100 - Volts Ir Reverse Leakage Current Vr=20V Vr=75V - 25 5 nA pA Vf Forward Voltage lF=5mA lF=30mA 0.630 0.730 1.0 Volts Trr Reverse Recovery Time Vr=6.0V lp=10mA Irp=1 OmA Rl=100D - 4 nS C Capacitance ... OCR Scan
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LL916A 1N916AM 1N916A 0730 Diode LL-34 1N916A abstract
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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
.model 1N916A 1N916A 1N916A 1N916A D(Is=0.1p Rs=4 CJO=1p Tt=12n Bv=100 Ibv=0.1p) * 85-?-? Original library
www.datasheetarchive.com/files/fairchild/pdfs/models actual/1n916a.mod
Fairchild 22/08/2003 0.1 Kb MOD 1n916a.mod