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1N5711-1 Microsemi Corporation Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 visit Digikey Buy
1N5711WS-7-F Diodes Incorporated Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2 visit Digikey Buy
1N5711W-7-F Diodes Incorporated Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2 visit Digikey Buy
JANTX1N5711-1 Microsemi Corporation Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 visit Digikey Buy
JANTXV1N5711UR-1 Microsemi Corporation Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 visit Digikey Buy
JAN1N5711UR-1 Microsemi Corporation Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 visit Digikey Buy

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1N5711 Datasheet

Part Manufacturer Description PDF Type
1N5711 Agilent Technologies Schottky Barrier Diodes for General Purpose Applications Original
1N5711 Avago Technologies Low 1/f noise general purpose Schottky diode Original
1N5711 Compensated Devices SCHOTTKY BARRIER DIODES Original
1N5711 Diodes SCHOTTKY BARRIER SWITCHING DIODE Original
1N5711 Diodes Short Form Selection Guide Original
1N5711 Diodes Schottky Barrier Switching Diode Original
1N5711 EIC Semiconductor Schottky Barrier Diodes Original
1N5711 Galaxy Semi-Conductor Holdings SMALL SIGNAL SCHOTTKY DIODES Original
1N5711 General Semiconductor Rectifier Diode, Schottky Diode, Single, 70V, DO-35, 2-Pin Original
1N5711 General Semiconductor Schottky Diodes Original
1N5711 Good-Ark Rectifier Diode, Schottky Diode, Single, 70V, SOD-27, 2-Pin Original
1N5711 Good-Ark Small-Signal Diode Schottky Diodes Original
1N5711 Lite-On Technology SCHOTTKY BARRIER SWITCHING DIODE Original
1N5711 Micro Commercial Components Schottky Barrier Switching Diode Original
1N5711 STMicroelectronics DIODE SCHOTTKY DIODE 70V 0.015A 2DO-35 Original
1N5711 STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original
1N5711 STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original
1N5711 STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original
1N5711 Taitron Components Rectifier Diode, Schottky Diode, Single, 70 MinV, SOD-27, 2-Pin Original
1N5711 Vishay 1N5711 Spice Parameters Original
Showing first 20 results.

1N5711

Catalog Datasheet MFG & Type PDF Document Tags

5082-2815

Abstract: 5082-2370 Data 1N5711, JAN1N5711/TX/TXV 1N5712 JAN1N5712/TX/TXV 5082-2300 Seríes 5082-2800 Seríes 5082-2900 , well suited for use in Doppler or narrow band video receivers. Note: The JAN Series 1N5711 and the JAN , device. The TX and TXV devices have solder dipped leads. Both the JAN Series 1N5711 and 1N5712 undergo , (.068) Description/ Applications 3.81 160 The 1N5711, 1N5712, 50822800/10/11 are passivated , , -2900.-60°C to +100°C for low tum-on voltage. The 1N5711, 1N5712, 5082-2800/10/11.-65
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OCR Scan
5082-2815 5082-2370 150 AVP 5082-2813 5082-2811 diode 5082-2800 MIL-STD-750

1N5711

Abstract: 1N5711-TAP Ordering code Marking Remarks 1N5711 1N5711-TR or 1N5711-TAP - Tape and Reel / Ammopack , 1N5711 / 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features · For general , 1N5711 VRRM 70 V 1N6263 Peak inverse voltage VRRM 60 Power dissipation (infinite , Document Number 85645 Rev. 1.3, 26-Apr-04 www.vishay.com 1 1N5711 / 1N6263 VISHAY Vishay , 70 1N6263 Leakage current Part 1N5711 IR = 10 µA Reverse breakdown voltage VR 60
Vishay Semiconductors
Original
LL5711 LL6263 1N6263-TR 1N6263-TAP diode 1n5711 DO-35 88/540/EEC

1n5711 diode

Abstract: fast recovery diode 54 (52 mm tape), 50 k/box TAP / 10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part 1N5711 1N6263 Ordering code 1N5711-TR or 1N5711-TAP 1N6263-TR or 1N6263-TAP Marking Remarks Tape and Reel , VISHAY 1N5711, 1N6263 Vishay Semiconductors Schottky Diodes Features · For general , wave 1) Test condition Part 1N5711 1N6263 Symbol VRRM VRRM Ptot IFSM Value 70 60 400 1 , temperature Document Number 85645 Rev. 1.2, 06-Feb-04 www.vishay.com 1 1N5711, 1N6263 Vishay
Vishay Semiconductors
Original
1n5711 diode fast recovery diode 54 18529 91/690/EEC D-74025
Abstract: DIGITRON SEMICONDUCTORS 1N5711, 1N5712 & 1N6263 â'¢ â'¢ SCHOTTKY DIODES For general , . MAXIMUM RATINGS @ 25°C ambient temperature unless otherwise specified. Parameter Symbol 1N5711 , - 1.0 - - 2.0 - - 2.0 - - 2.2 1N5711 1N5712 V(BR)R lR=10μA 1N6263 Leakage Current 1N5711, 1N6263 1N5712 Forward Voltage Drop lR 1N5711, 1N6263 VF 1N5712 Junction Capacitance 1N5711 1N5712 Ctot 1N6263 144 Market Street Kenilworth NJ DIGITRON
Original
MIL-PRF-19500

1n5711 diode

Abstract: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 V Maximum , Reverse recovery time trr Test Conditions Part Min Typ Max Unit 1N5711 70 - , V IF=15mA - - 1.0 V 1N5711 - - 2.0 pF 1N6263 - - 2.2 pF , Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 1/3 1N5711 / 1N6263 IF
Excel Semiconductor
Original

1N6263

Abstract: 1N5711 Ordering code Marking Remarks 1N5711 1N5711-TR or 1N5711-TAP - Tape and Reel /Ammopack , 1N5711, 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features · For general , 1N5711 VRRM 70 V 1N6263 Peak inverse voltage VRRM 60 Power dissipation (infinite , Document Number 85645 Rev. 1.3, 13-Apr-04 www.vishay.com 1 1N5711, 1N6263 VISHAY Vishay , 70 1N6263 Leakage current Part 1N5711 IR = 10 µA Reverse breakdown voltage VR 60
Vishay Semiconductors
Original

IR 10e

Abstract: 1N5711 spice Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712 , .-60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 .-65°C to +200°C , . 100 mW 1N5711, 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711, 1N5712
Agilent Technologies
Original
IR 10e 1N5711 spice 1N5712 spice IN5712 RS-296-D diode 5082- 2800 T25/1N57 5968-7181E 5989-3338EN

1N5712 spice

Abstract: 1N5711 spice Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 , , sampling, and wave shaping applications. 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712 , Operating and Storage Temperature Range 1N5711, 1N5712, 5082-2800/10/11. -65°C to +200°C 5082-2835
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Original
5082-2804 2800-Series 10E-5 10E-9 10E-8
Abstract: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , =25â"ƒ) Parameter Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 V , Conditions Part Min Typ Max Unit 1N5711 70 - - V 1N6263 60 - - V , 1N5711 - - 2.0 pF 1N6263 - - 2.2 pF - - 1.0 ns IR=10μA (pulsed , +86-512-67606917 Rev. 3g, 1-Sep-2009 1/3 1N5711 / 1N6263 IF â'" Forward current (mA) IF â'" Forward Excel Semiconductor
Original
1N626

diode hpa 2800

Abstract: 5082-2815 General Purpose Applications Technical Data 1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 5082-2300 , . Note: The JAN Series 1N5711 and the JAN Series 1N5712 devices are well suited for applications that , the JAN Series 1N5711 and 1N5712 undergo testing per MIL-STD-750. More information about these devices , ) 25.4 ( 1.00 ) M IN . 1.93 (.0761 1.73 (.068! ' The 1N5711, 1N5712, 50822800/10/11 are passivated , , -2900.-60°C to +100°C for low turn-on voltage. The 1N5711, 1N5712, 5082-2800/10/11.-65
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OCR Scan
diode hpa 2800 5082-2800 B2B diode 5082-2301 5082-2805 5082-2997
Abstract: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 V Maximum , Reverse recovery time trr Test Conditions Part Min Typ Max Unit 1N5711 70 - , V IF=15mA - - 1.0 V 1N5711 - - 2.0 pF 1N6263 - - 2.2 pF , Semiconductor www.excel-semi.com FaxBack +86-512-67606917 Rev. 3c, 16-May-2005 1/3 1N5711 / 1N6263 Excel Semiconductor
Original

diode 5082-3080

Abstract: 5082-2804 70 V · Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , .-60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 .-65°C to +200°C , . 100 mW 1N5711, 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711, 1N5712
Agilent Technologies
Original
diode 5082-3080 5082-2835 diode 5082-2800 datasheet 5082-2810 F 5082 diode 10e 5968-4304E

diode hpa 2800

Abstract: diode hpa 2900 Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711, JAN1N5711/TX/TXV 1N5712 , '¢ Matched Characteristics Available Description/ Applications The 1N5711, 1N5712, 50822800/10/11 are , JAN Series 1N5711 and the JAN Series 1N5712 devices are well suited for applications that require the , Series 1N5711 and 1N5712 undergo testing per MIL-STD-750. More information about these devices can be , 5082-2301, -2302, -2303, -2900.-60°C to +100°C 1N5711, 1N5712, 5082-2800/10
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OCR Scan
1N6712 diode hpa 2900 IN5711 HP 2804 HPA 2900 5082-2970

IR 10e

Abstract: HP2.811 70 V · Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , . -60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 . -65°C to , . 100 mW 1N5711, 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711, 1N5712
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Original
HP2.811 5082-2810 spice 5082-XXXX

5082-2815

Abstract: BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800 , /Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated S c h o ttk y b a rrie r diod es w h ic h use , Range 5082-2301,2302,2303,2900 . . -6 0° C t o +100° C 1N5711, 1N5712, 5082-2800/10/11 , . 100 mW Typical Package Capacitance: 1N5711, 1N5712, 5082-2800/10/11 . , 1N5711,1N5712: 2.0 nH 2800 Series: 2.0 nH 2300.2900 Series: 3.0 nH 1N5711,1N5712:0.2 pF 2800 Series
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OCR Scan

diode t25 13 Go

Abstract: 1N5712 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated , Temperature Range 1N5711, 1N5712, 5082-2800/10/11. -65°C to +200°C 5082-2835 , linearly to zero at maximum rated temp. 1N5711, 1N5712, 5082-2800/10/11.250 mW , . 4 pounds pull Typical Package Inductance 1N5711, 1N5712
Avago Technologies
Original
diode t25 13 Go DIODE T25 DIODE T25 4 T25 13 GO 5082-2080 1n5711 equivalent T25/T50 5989-3680EN AV02-0429EN

1n5711 diode

Abstract: 1N6263 1N5711 and 1N6263 Vishay Semiconductors formerly General Semiconductor Schottky Diodes DO , µs Square Wave IFSM 2.0 A 1N5711 1N6263 Peak Inverse Voltage RJA Thermal , - 1 ns Reverse Breakdown Voltage Junction Capacitance Reverse Recovery Time 1N5711 1N6263 1N5711 1N6263 Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Document Number 88111 8-May-02 www.vishay.com 1 1N5711 and 1N6263
Vishay Semiconductors
Original
DO-204AH D7/10K D8/10K

1N5711

Abstract: 1n6263 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , temperature Storage temperature range Part 1N5711 1N6263 Symbol VRRM VRRM IFSM Ptot Tj TS Value 70 60 2.0 400 , =10A (pulsed) VR=50V IF=1mA IF=15mA VR=0V, f=1MHz IF= IR=5mA recover to 0.1 IR 1N5711 1N6263 Part 1N5711 1N6263 , www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 1/3 1N5711 / 1N6263 Characteristics (Tj , 1N5711 / 1N6263 Dimensions in mm Cathode identification Type No. 0.55 max. Cathode 2.0 max
Excel Semiconductor
Original

HP 5082-2835

Abstract: HP 5082-2810 70 V · Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , . -60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 . -65°C to , . 100 mW 1N5711, 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711, 1N5712
Hewlett-Packard
Original
HP 5082-2835 HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 5967-5767E

5082-2970

Abstract: 1N5711 spice 70 V · Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Series The , . -60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 . -65°C to +200°C , 1N5711, 1N5712, 5082-2800/10/11 . 250 mW 5082-2835 , Inductance 1N5711, 1N5712: . 2.0 nH
Hewlett-Packard
Original
5082-2912 hp2811 5966-0930E 1N5711, 5082-2800

5082-2815

Abstract: 5082-2970 PURPOSE APPLICATIONS 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35 , /Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated S chottky barrier diodes w hich use a patented , , 2302, 2303, 2 9 0 0 . -60°C to +100° C 1N5711,1N5712, 5082-2800/10/11, HSCH , . 100 mW 1N5711, 1N5712, 5082-2800/10/11 . 250 mW 5082-2835 , HEWLETT-PACKARD» Electrical specifications a t TA=25°C Part Number 50822800 1N5711 2305 2301 2302 2303 2810
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OCR Scan
HSCH-1001 1N6263I diode hp 2835 schottky diode hp 2811 HSCH-1001 5082-2800 5082-2306 5082-2836

5082-2811

Abstract: Technical Data 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Series Features · Low Turn-On , ) 1.73 (. 068 ) Description/Applications The 1N5711,1N5712,5082-2800/ 10/11 are passivated Schottky , ,- + 100°C 1N5711,1N5712,5082-280(Y10/11 . 250mW , Package Inductance 1N5711,1N5712
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OCR Scan
Showing first 20 results.