| 1N5529B |
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Compensated Devices
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LOW REVERSE LEAKAGE CHARACTERISTICS |
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| 1N5529B |
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Microsemi
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Diodes - Zener - Single, Discrete Semiconductor Products, DIODE ZENER 9.1V 500MW DO-35 |
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| 1N5529B |
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Microsemi
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Low Voltage Avalanche Zener |
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| 1N5529B |
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Microsemi
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Low Voltage Avalanche Diode |
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PDF
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| 1N5529B |
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APD Semiconductor
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ZENER DIODES |
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| 1N5529B |
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APD Semiconductor
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400 mW Low Noise Silicon Zener Diodes |
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PDF
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| 1N5529B |
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BKC International
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Low Noise, Low Leakage Zener Diodes in DO-35 Package |
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| 1N5529B |
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Central Semiconductor
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Low Leakage, Low Noise Zener Diode DO-7 |
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| 1N5529B |
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Central Semiconductor
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Low Leakage, Low Noise Zener Diode, DO-7 Case |
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| 1N5529B |
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Codi Semiconductor
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Silicon Diodes |
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| 1N5529B |
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Codi Semiconductor
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Low Noise Low Voltage Regulator Diodes to MIL-S-19500/437 |
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| 1N5529B |
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Eastron
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High Performance Low Leakage & Low Noise Zeners |
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| 1N5529B |
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Eastron
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HIGH PERFORMANCE LOW LEAKAGE & LOW NOISE ZENERS |
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| 1N5529B |
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International Semiconductor
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400 mW Low Noise Silicon Zener Diodes |
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| 1N5529B |
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Jinan Gude Electronic Device
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0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. ±5% tolerance. |
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| 1N5529B |
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Knox Semiconductor
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Low Voltage Avalanche Zener Diodes |
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PDF
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| 1N5529B |
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Microsemi
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Low Voltage Avalanche Zener |
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PDF
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| 1N5529B |
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Microsemi
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Low Voltage Avalanche Zener |
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| 1N5529B |
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Motorola
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European Master Selection Guide 1986 |
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| 1N5529B |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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