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1N5400-1N5408

Catalog Datasheet MFG & Type PDF Document Tags

1N54001

Abstract: DS28007 -2 1 of 2 1N5400-1N5408 IF, INSTANTANEOUS FORWARD CURRENT (A) 4.0 I(AV), AVERAGE FORWARD , DS28007 Rev. D-2 2 of 2 1N5400-1N5408 Lite-On Technology
Lite-On Technology
Original
1N54001 1N5408 MIL-STD-202 DO-201AD 1N5405 1N5406

1N5400-1N5408

Abstract: 1N5400 1N5400-1N5408 1N5400 - 1N5408 Features · 3.0 ampere operation at TA = 75°C with no thermal runaway. · High current capability. · Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM Maximum Repetitive , 5.0 500 µA µA 30 pF 1N5400-1N5408, Rev. C (continued) 4 100 3 Forward , 1N5400-1N5408, Rev. C 1N5400-1N5408 General Purpose Rectifiers TRADEMARKS The following are
Fairchild Semiconductor
Original
1n54001n5408

1N5400-1N540

Abstract: 1N5400-1N5408 1N5400-1N5408 1N5400 - 1N5408 Features · 3.0 ampere operation at TA = 75°C with no thermal runaway. · High current capability. · Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM Tstg Maximum , 0.5 mA 5.0 500 uA uA 30 pF 1N5400-1N5408, Rev C1, June 2006 (continued) 4 , 1N5400-1N5408, Rev C1, June 2006 1N5400-1N5408 General Purpose Rectifiers TRADEMARKS The following
Fairchild Semiconductor
Original
1N5400-1N540

1N5400-1N5408

Abstract: T0030 1N5400-1N5408 1N5400 - 1N5408 Features · 3.0 ampere operation at TA = 75°C with no thermal runaway. · High current capability. · Low leakage. DO-201AD COLOR BAND DENOTES CATHODE , 30 mA pF 1N5400-1N5408, Rev. A1 (continued) Typical Characteristics Forward Current , Cycle 10 5 1 0.1 1 5 10 REVERSE VOLTAGE (V) 50 100 1N5400-1N5408, Rev. A1 1N5400-1N5408 General Purpose Rectifiers DO-201AD/AE Tape and Reel Data DO-201AD/AE Packaging
Fairchild Semiconductor
Original
T0030 CBVK741B019 Fairchild taping F63TNR
Abstract: 1N5400-1N5408 1N5400 - 1N5408 Features â'¢ 3.0 ampere operation at TA = 75° C with no thermal runaway. â'¢ High current capability. â'¢ Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM Maximum , 5407 5408 1.2 V 0.5 mA 5.0 500 uA uA 30 pF 1N5400-1N5408, Rev C1, June , Fairchild Semiconductor Corporation 1N5400-1N5408, Rev C1, June 2006 1N5400-1N5408 General Purpose Fairchild Semiconductor
Original
Abstract: -2 1 of 2 1N5400-1N5408 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT , DS28007 Rev. E-2 10 2 of 2 1N5400-1N5408 Diodes Diodes
Original
1N5401 1N5402 1N5404 1N5407

1N5406

Abstract: 1N5402 www.diodes.com 1N5400-1N5408 ã Diodes Incorporated 4.0 IF, INSTANTANEOUS FORWARD CURRENT (A) 200 , Maximum Non-Repetitive Surge Current DS28007 Rev. 6 - 2 2 of 3 www.diodes.com 1N5400-1N5408 , ://www.diodes.com/datasheets/ap02008.pdf. DS28007 Rev. 6 - 2 3 of 3 www.diodes.com 1N5400-1N5408
Diodes
Original
J-STD-020C 1N5401-B 1N5401-T 1N5402-B 1N5402-T 1N5404-B
Abstract: DIGITRON SEMICONDUCTORS 1N5400-1N5408 GENERAL PURPOSE RECTIFIERS MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value â'" 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 50 100 200 300 400 500 600 800 1000 Unit VRRM Maximum repetitive reverse voltage IF(AV) Average rectified forward current, .375â' , sales@digitroncorp.com www.digitroncorp.com Rev. 20121127 DIGITRON SEMICONDUCTORS 1N5400-1N5408 144 Market DIGITRON
Original
DO-201A MIL-PRF-19500

CT 1N5406

Abstract: 1n5402 Annex Notes 5 and 7. DS28007 Rev. 7 - 2 1 of 3 www.diodes.com 1N5400-1N5408 ã Diodes , DS28007 Rev. 7 - 2 2 of 3 www.diodes.com 1N5400-1N5408 Ordering Information Device 1N5400 , . DS28007 Rev. 7 - 2 3 of 3 www.diodes.com 1N5400-1N5408 Diodes
Diodes
Original
CT 1N5406 1N5401 diodes 5402-B 1N5404-T 1N5406-B 1N5406-T 1N5407-B 1N5407-T

1N5401

Abstract: DO-201AD Directive Annex Notes 5 and 7. DS28007 Rev. 7 - 2 1 of 3 www.diodes.com 1N5400-1N5408 ã Diodes , Typical Total Capacitance 1N5400-1N5408 Ordering Information (Note 4) Device Packaging , Diodes Incorporated. DS28007 Rev. 7 - 2 3 of 3 www.diodes.com 1N5400-1N5408 Diodes
Diodes
Original
1N5408 Diode 1N5408 diode 1n5406 diode 1n5408 201AD 1N5408-B 1N5408-T

1N5406

Abstract: 1.0MHz and applied reverse voltage of 4.0V DC. DS28007 Rev. E-2 1 of 2 1N5400-1N5408 4.0 , of 2 1N5400-1N5408 Diodes
Diodes
Original

1N5402 spice model

Abstract: 1N5408 Diode 1N5408 -2 1 of 2 www.diodes.com 1N5400-1N5408 ã Diodes Incorporated 200 IF, INSTANTANEOUS , 1N5400-1N5408 Diodes
Diodes
Original
1N5402 spice model diode 1n5408 temperature rating IN 5408 diode 1n spice Diode 1n5400

1N54001

Abstract: n5408 1N5400-1N5408 F A IR C H IL D S E M IC O N D U C T O R , D iscrete POWER & S ign al Technologies 1N5400 -1 N5408 Features · 3.0 ampere operation at TA = 75°C with no thermal runaway. · High current capability. · Low leakage. COLOR BAND D EN OTES CATHODE l.O m in (25.4) Dimensions in inches, (mm) 0.375 (9.53) 0.285 (7.24) 0 .2 10 (5.33) 0 .J9 0 (4.83) 0.052 U .32) 3.0 Ampere , Semiconductor Corporation K A IR S 0 0 4 1 0 1N5400-1N5408 General Purpose Rectifiers (continued
-
OCR Scan
Abstract: Diodes DIP Type 3.0A Rectifier 1N5400-1N5408 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current MaximumRatingsandElectricalCharacteristics @ TA = 25 Parameter Symbol Peak Repetitive Reverse Voltage VRWM 1N 5400 1N 5401 1N 5402 1N 5404 1N 5406 1N 5407 1N 5408 Unit 50 100 200 400 600 , Diodes DIP Type 1N5400-1N5408 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD Kexin
Original

APPLICATION DIODE 1N5406

Abstract: FU 5408 1N5400-1N5408 Vishay Lite-On Power Semiconductor 3.0A Rectifier Features · · · · · D iffu se d ju n c tio n H igh c u rre n t c a p a b ility and lo w fo rw a rd v o lta g e d ro p S u rg e o v , -Jun-98 1N5400-1N5408 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25°C unless otherwise specified) 4.0 , . Typ. Diode Capacitance vs. Reverse Voltage 2 (4 ) Rev. A2, 24-Jun-98 1N5400-1N5408 Vishay , Rev. A2, 24-Jun-98 3 (4 ) 1N5400-1N5408 Vishay Lite-On Power Semiconductor Ozone Depleting
-
OCR Scan
APPLICATION DIODE 1N5406 FU 5408 LITEON 1N5406 1N 5400 diode 1N5406-- D-74025
Abstract: Product specification 1N5400-1N5408 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current MaximumRatingsandElectricalCharacteristics @ TA = 25 Parameter unless otherwise specified Symbol Peak Repetitive Reverse Voltage VRWM 1N 5401 1N 5402 1N 5404 1N 5406 1N 5407 1N 5408 Unit 50 100 , ://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 2 Product specification 1N5400-1N5408 IF TY Semiconductor
Original

1N540I

Abstract: 1N54 . DS28007 Rev. D-2 1 of 2 1N5400-1N5408 , DS28007 Rev. D-2 2 of 2 1N5400-1N5408
-
OCR Scan
1N540 1N540I 1N54 N540 N5405

n5408

Abstract: Corporation PF 1N5400-1N5408 Discrete POWER & Signal Technologies F A IR C H IL D (continued , REVERSE VOLTAGE (V) 50 100 140 1N5400-1N5408 General Purpose Rectifiers
-
OCR Scan
DO-201
Abstract: DC. DS28007 Rev. D-2 1 of 2 1N5400-1N5408 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV , Surge Current DS28007 Rev. D-2 10 2 of 2 1N5400-1N5408 Diodes Diodes
Original

1N54001

Abstract: 1N5400-1N540 1N5400-1N5408 P /\IR C H II_D E Ml C O N D U C TO R ! D is c re te PO W E R & S ig n a l Technologies 1N5400 -1 N5408 Features · 3.0 ampere operation at T A = 75°C with no therm al runaway. · High current capability. · Low leakage. C O LO R BAND D EN O TES C ATHO DE 1.0 m in (25.4) Dimensions in inches (tn tn) 0.375 0.285 (9.53) (7.24) -H 0.210 (5.33) 0.190 (4.83) 0.052 (1.32) 0.048 , > > 1N5400-1N5408
-
OCR Scan

1N5400-1N5408

Abstract: APPLICATION DIODE 1N5406 1N5400­1N5408 Vishay Lite­On Power Semiconductor 3.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 200A peak D , 1N5400­5404 1N5406­5408 50 25 15 Rev. A2, 24-Jun-98 1 (4) 1N5400­1N5408 Vishay Lite­On Power , , 24-Jun-98 1N5400­1N5408 Vishay Lite­On Power Semiconductor Dimensions in mm 14445 Case , number Rev. A2, 24-Jun-98 3 (4) 1N5400­1N5408 Vishay Lite­On Power Semiconductor Ozone
Vishay Intertechnology
Original
1n5406 liteon 1n5408 BL DIODE 1N5402 3a 1N5401 Vishay 88/540/EEC 91/690/EEC
Abstract: and applied reverse voltage of 4.0V DC. DS28007 Rev. D-2 1 of 2 1N5400-1N5408 l(AV , 1N5400-1N5408 -
OCR Scan

IN 5406 DC

Abstract: 1N5400-1N5408 3.0 AMP. Silicon Rectifiers DO-201AD Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Polarity: Color band denotes cathode High temperature soldering guaranteed: o 260 C/10 seconds/.375",(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Weight: 1.2 , . 1N5400-1N5408 3.0 AMP. Silicon Rectifiers RATINGS AND CHARACTERISTIC CURVES (1N5400 THRU 1N5408) FIG
-
Original
IN 5406 DC

1N54001

Abstract: AMERICAN P O W E R DEVICES SIE D 073713S 0000071 TA3 -BAPD TZo/-/$- 4b FEATURES american p o w e r devices, inc. 1N5400-1N5408 SEMICONDUCTORS 3A standard recovery epoxy silicon rectifiers MAXIMUM RATINGS ·Junction Temperature -65°C to + 175°C · Storage Temperature -65°C to +175°C · Max. Avg Forward Current: 3.0A @ 105°C 1.5 A @ 140°C · Max. Overload Surge Current: 200A, one cycle , american SEMICONDUCTORS 1N5400-1N5408 p o w e r devices, inc. T j - 2 5°C mo i TY >ICA 70
American Power Devices
Original
1N5403 1N6263 SD101A SD101B SD101C SD103A

N5408

Abstract: 1N5400-1N5408 F /\IR C H II-D SEMICONDUCTOR D iscrete PO W ER & S ig n a l Technologies 1N5400 - 1 N5408 Features · 3.0 ampere operation at TA = 7 5 °C with no thermal runaway. · High current capability. · Low leakage. 1.0 min (25.4; Dimensions in inelies (mmj 0.375 (9.53; 0.2S5 (7.24; DO-201 AD COLOR BAND DENOTES CATHODE -H 3.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings , 1.0 MHz V mA pF k 1998 F airchild S em iconductor Corporation 1N5400-1N5408
-
OCR Scan

AMERICAN POWER DEVICES

Abstract: lynn AMERICAN POWER DEVICES SSE J american power devices, inc. 4b SEMICONDUCTORS 073713S 00QDQ71 Tfl3 â APD 72 1N5400-1N5408 3A standard recovery epoxy silicon rectifiers FEATURES â'¢ Low cost plastic package â'¢ High current operation, 3A @ T = 105°C â'¢ High surge current capability â'¢ Low forward voltage drop °C °C MAXIMUM RATINGS â'¢Junction Temperature -65°C to + 175°C â'¢ Storage , power devices« inc. 1N5400-1N5408 mo 70 50 30 120 z e § io u o S 70 5 te S 50 M a o tu Ã
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OCR Scan
AMERICAN POWER DEVICES lynn 01905 Q00Q07S

diode IN 5402

Abstract: 1N5408 Diode 1N5408 500 1.2 µA µA V 0.5 30 mA pF 1N5400-1N5408 Discrete POWER & Signal Technologies , REVERSE VOLTAGE (V) 50 100 140 1N5400-1N5408 General Purpose Rectifiers Fairchild
Fairchild Semiconductor
Original
diode IN 5402 IN 5406

1N5400

Abstract: 1N5405 voltage of 4.0V DC. DS28007 Rev. E-2 1 of 2 1N5400-1N5408 IF, INSTANTANEOUS FORWARD CURRENT , . 3 Maximum Non-Repetitive Surge Current DS28007 Rev. E-2 10 2 of 2 1N5400-1N5408
Diodes
Original

1N5408 Diode 1N5408

Abstract: IN 5406 DC 1N5400-1N5408 3A Silicon Rectifiers PRODUCT SUMMARY Voltage ratings available from 50 Volts to 1000 Volts FEATURES DO-201AD Low forward voltage drop High current capability High reliability High surge current capability MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, matte tin plating Polarity: Color band denotes cathode end High , /21/2006 Rev.4.01 www.SiliconStandard.com 1 of 2 1N5400-1N5408 RATINGS AND CHARACTERISTIC
Silicon Standard
Original

PX15A13

Abstract: rm11z-rm11c 1. IF VRRM VF Trr A V V µ s 1A 50-1000V 1.1 R-1 2 1N4001-1N4007 1A 50-1000V 1.1 DO-41 3 1N5391-1N5399 1.5A 50-1000V 1.1 DO-15 2A 50-1000V 1.0 DO-15 5 1N5400-1N5408 3A 50-1000V0.95 DO-201AD 6 6A05-6A10 6A 50-1000V0.95 R-6 7 TS750-TS758 6A 50-800V 1.25 R-6 1 1A1-1A7 4 2A01-2A07 8 RL10-RL60 1A-6A 50-1000V 1.0 9 2CZ81-2CZ87 0.05A-3A50-1000V 1.0 DO-41 10
-
Original
2CP21-2CP29 17PX10A02-PX10A13 ERC04-0213 PX15A13 rm11z-rm11c 2cp21 PX 1N4007 1n4001-1n4007 trr PX10A02 100-1000V1 2DZ14-2DZ15 BYW27 200-1300V1 DR202-DR210

1N54001

Abstract: 1N540b HQNEV TECHNOLOGY LTD. ) 1N5400.1N5408 PLASTIC SILICON RECTIFIERS AMBIENT TEMPERATURE, °C Â
-
OCR Scan
1N540b

Alpha

Abstract: SB200-SB210 DB800-DB810 1N5400-1N5408 ADB1504P-ADB1508P BAR1200D-BAR1210D DB1000-DB1010 1N5400G-1N5408G
Diotec
Original
MR750 MR751 MR752 MR754 MR756 MR820 Alpha SB200-SB210 SB200-SB21 DR750-DR756

2510W

Abstract: RS1M diode KBU8005-KBU806; KBU808-KBU810 1N4001S-1N4007S KBU10005-KBU1006; KBU1008-KBU1010 1N5400-1N5408
Kingtronics International
Original
2510W RS1M diode DO-214AC ABS10 LL4148 MB10S SM4007 MB10M

PK 1N5406

Abstract: 28A1 ) DIA .197(5.0) DO ­ 201AD 28A­1/2 LESHAN RADIO COMPANY, LTD. 1N5400-1N5408 DO-201AD 3A
Leshan Radio Company
Original
PK 1N5406 28A1
Abstract: BLGALAXY ELECTRICAL www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES 1N5400-1N5408 3 BL Galaxy Electrical
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DO--27 STD-202 1N5400---1N5408

diode 6A 1000v

Abstract: SR506 Diode 1N4937 Bulk RoHS DO-41 1N5400-1N5408 Diode 1N5399 (1,5A 1000V) Bulk RoHS DO-15 1A1-1A7 Diode
Kingtronics International
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diode 6A 1000v SR506 Diode Diode SR360 SM4007 Diode diode her307 SMD4001-4007 SR560 DO-27 UF4004 UF4007 10A10
Abstract: 36 â  â'˜i G D n S M 0G00M 4 22T â  200 A 1N5400.1N5408 Junction temperature -
OCR Scan
UL94V-0 R0D1RS14

1N4007 MINI MELF

Abstract: 1N4001/1N4007 sma G3y G4y GI500-GI510 1N5400-1N5408 P300y P600y GI750-GI758 NS8yT NSF8yT NSB8yT
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1N3957GP 1N4585GP 1N4586GP 1N5614-1N5622 1N4001GP-1N4007GP DO-204AL 1N4007 MINI MELF 1N4001/1N4007 sma 1n5408 smd DO204AL 1N4007 DO-214BA diode 1n4007 melf smd GP02- GI250- MPG06 1N361 1N4383GP-1N4385GP
Abstract: Device 1N5400-1N5408 Package DO-201AD (Pb-Free) Shipping 1250pcs / tape For information on Sangdest Microelectronics
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N0547

9RC6066

Abstract: BOSCH 0 212 912 001 =1.5-1.8mkS, IF=300-700mA -7 DO-201 1N5400-1N5408 IR(AV)=10mA (UR=200V), UF=1.3V, (IF=9.5A) -7 DO
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9RC6066 BOSCH 0 212 912 001 TDA1047 Bosch alternator diode TDA3541 TDA3520 LM235 IL235Z L272M L9686 U2043 U642B

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT .8 B40D-B500D .127 1N5400-1N5408
BL Galaxy Electrical
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SBLF10100CT SBLF1030CT-SBLF10100CT sbl20100 SMD 1N60 SB320-SB3A0 RN1Z SZQ35K24L3 SZQ35K28L3 SZQ35K34L3 SZQ35K328L3 SZQ50A24L3 SZQ50A28L3

diode cross reference

Abstract: IN5408 equivalent 1N5400-1N5408 1N5400 - 1N5408 Features â'¢ 3.0 ampere operation at TA = 75° C with no thermal runaway. â'¢ High current capability. â'¢ Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM Maximum , 5407 5408 1.2 V 0.5 mA 5.0 500 uA uA 30 pF 1N5400-1N5408, Rev C1, June , Fairchild Semiconductor Corporation 1N5400-1N5408, Rev C1, June 2006 1N5400-1N5408 General Purpose
Diotec
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diode cross reference IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302
Abstract: 1N5400-1N5408 Vishay Lite-On Power Semiconductor 3.0A Rectifier Features · · · · · D iffu se d ju n c tio n H igh c u rre n t c a p a b ility and lo w fo rw a rd v o lta g e d ro p S u rg e o v , -Jun-98 1N5400-1N5408 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25°C unless otherwise specified) 4.0 , . Typ. Diode Capacitance vs. Reverse Voltage 2 (4 ) Rev. A2, 24-Jun-98 1N5400-1N5408 Vishay , Rev. A2, 24-Jun-98 3 (4 ) 1N5400-1N5408 Vishay Lite-On Power Semiconductor Ozone Depleting PanJit International
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MIL-S-19500/228 2002/95/EC MIL-STD-750

1n5400

Abstract: www.diodes.com 1N5400-1N5408 ã Diodes Incorporated 4.0 IF, INSTANTANEOUS FORWARD CURRENT (A) 200 , Maximum Non-Repetitive Surge Current DS28007 Rev. 6 - 2 2 of 3 www.diodes.com 1N5400-1N5408 , ://www.diodes.com/datasheets/ap02008.pdf. DS28007 Rev. 6 - 2 3 of 3 www.diodes.com 1N5400-1N5408
PanJit International
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2011/65/EU

1N5408

Abstract: 1N5400 AMERICAN P O W E R DEVICES SIE D 073713S 0000071 TA3 -BAPD TZo/-/$- 4b FEATURES american p o w e r devices, inc. 1N5400-1N5408 SEMICONDUCTORS 3A standard recovery epoxy silicon rectifiers MAXIMUM RATINGS ·Junction Temperature -65°C to + 175°C · Storage Temperature -65°C to +175°C · Max. Avg Forward Current: 3.0A @ 105°C 1.5 A @ 140°C · Max. Overload Surge Current: 200A, one cycle , american SEMICONDUCTORS 1N5400-1N5408 p o w e r devices, inc. T j - 2 5°C mo i TY >ICA 70
Excel Semiconductor
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DIODE 1N5402 dc diode 1n5401

1n5408

Abstract: DIODE 1N5402 dc 1N5400-1N5408 F A IR C H IL D S E M IC O N D U C T O R , D iscrete POWER & S ign al Technologies 1N5400 -1 N5408 Features · 3.0 ampere operation at TA = 75°C with no thermal runaway. · High current capability. · Low leakage. COLOR BAND D EN OTES CATHODE l.O m in (25.4) Dimensions in inches, (mm) 0.375 (9.53) 0.285 (7.24) 0 .2 10 (5.33) 0 .J9 0 (4.83) 0.052 U .32) 3.0 Ampere , Semiconductor Corporation K A IR S 0 0 4 1 0 1N5400-1N5408 General Purpose Rectifiers (continued
Excel Semiconductor
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1n5408 diode 1n5400 diode diode 1n5402
Abstract: KBU8005-KBU806; KBU808-KBU810 1N4001S-1N4007S KBU10005-KBU1006; KBU1008-KBU1010 1N5400-1N5408 Excel Semiconductor
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1N54

Abstract: 1N5400 =1.5-1.8mkS, IF=300-700mA -7 DO-201 1N5400-1N5408 IR(AV)=10mA (UR=200V), UF=1.3V, (IF=9.5A) -7 DO
PanJit International
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