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1N5185 Datasheet

Part Manufacturer Description PDF Type
1N5185 Dionix 3.0A Iout, 50V Vrrm Fast Recovery Rectifier Scan
1N5185 General Instrument 3.0A Iout, 50V Vrrm Fast Recovery Rectifier Scan
1N5185 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N5185 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N5185 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N5185 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N5185 Terry Semiconductor 3.0A Iout, 50V Vrrm Fast Recovery Rectifier Scan
1N5185A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N5185A N/A Shortform Semicon, Diode, and SCR Datasheets Scan

1N5185

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TERRY SEMICONDUCTOR INC 33E D â  flTMTD77 GDOGOOb 1 â  7-¿)3>-/5~ TERRY m FAST RECOVERY RECTIFIERS OPERATING STORAGE TEMPERATURE -65°C to +175°C TYPE Peak Inverse Voltage Average Rectified Current Surge Forward Current Max, Reverse Current at TA=25°C Max. Forward Voltage Drop at Ta=25°C Max. Reverse Recovery Time VRRM lF(AV) Ta 'FSM |R Vf at lF(AV) trr (V) (A) (°C) (A) (uA) (A) (V) (ns) 1N5185 Series. 3 AMP. Plaslic Case:DO-201AD. Outlined 1N5185 50 3.0 25 200 5.0 3.0 1.3 150(3) 1N5186 -
OCR Scan
1N5187 1N5188 1N5189 MR850 MR851 MR852 fr600 TMTD77
Abstract: Central PROCESS TM Semiconductor Corp. CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5185 thru 1N5188 1N5415 thru 1N5420 The Typical Electrical Characteristics Central Semiconductor
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Abstract: Rectifiers, Fast Recovery (Continued) 2.0 lO (AMPS) 3.0 @ T a (°C) 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE I/ / GPR-1A VRRM (VOLTS) DO-15 50 GPR-3A 1N5185 1N5415 100 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF m a x @ IF = io -
OCR Scan
CPR2F-010
Abstract: 1N5185 Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3 @V(RM) (V) (Test Condition) I(RM) Max.(A) Reverse Current5.0u @V(R) (V)(Test Condition)50 I(RM) Max.(A) Pk. Rev. Current.10m @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)100â'™ Semiconductor American Microsemiconductor
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Abstract: PROCESS CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 11 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Ã/2,000Ã Back Side Metalization Ni/Au - 5,000Ã/2,000Ã GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5185 thru 1N5188 1N5415 thru 1N5420 BACKSIDE CATHODE R0 R2 (29-April 2010) w w w. c e n t r Central Semiconductor
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Abstract: Racttflers, Fast Recovery (Continued) lO (AM PS) ; · T A f C) IFSM -
OCR Scan
1O00V
Abstract: Rectifiers, Fast Recovery (Continued) IO (AMPS) 2.0 3.0 @T (oC) A 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE GPR-1A DO-15 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 GPR-3A VRRM (VOLTS) 50 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF MAX @ IF =IO Central Semiconductor
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Abstract: Rectifiers, Past Recovery (Continued) lO {AMPS) 2.0 3.0 @TA(°C) 75 75 55 55 ÌFSM (AMPS) 50 50 80 80 CASE I GPR-1A I DO-15 / GPR-3A VRRM (VOLTS) 50 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF MAX @ IF = lO 1.3V 1.3V 1.3V 1.1V IR MAX @ VRRM 5.0jxA 5.0|a.A 5.0nA 1.0|aA trr (50V thru 400V) 200ns 200ns -
OCR Scan
Abstract: (continued) 3.0 D0201AD li G3/ \ G4 D0201 1 M G3 < RGP30A 1N5185 RG3A 1N5415 RG4A GI910 -
OCR Scan
D0204AP RGP15D BYW36 RGP15G diode diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener D0201AP RGP15A RGP20A RGP15B RGP20B
Abstract: Rectifiers, Fast Recovery (Continued) IO (AMPS) 2.0 3.0 @TA (oC) 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE GPR-1A DO-15 GPR-3A VRRM (VOLTS) 50 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF MAX @ IF =IO 1.3V Central Semiconductor
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Abstract: -3A 1N5185 1N5415 1N5416 1N5417 1N5418 1N5420 CR2F-010 CR2F-020 CR2F-040 CR2F-060 CR2F-080 CR2F-100 1N5186 -
OCR Scan
1N561 1N4933 1N4934 1N4935 1N4936 1N4937 1N4942
Abstract: -15 1N5185 CR2F-0I0 CR2F-020 CR2F-040 CR2F-060 CR2F-080 CR2F-100 1N5186 1N5187 1N5188 1N5190 1.3V 1.3V 1.3V -
OCR Scan
DO-41 CPR1F-010 CPR1F-020 CPR1F-040 CPR1F-060 CPR1F-080
Abstract: 80 CASE GPR-1A DO-15 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 Central Semiconductor
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1N4944 1N5617 1N4946 1N4947 CR2F020 CR1F-010 1N5615 CR1F-020 CR1F-040
Abstract: D0201 G3 li \ Ì < RGP30A RGP30B RGP30D RGP30G 1N5185 1N5186 1N5187 1N5188 1N5189 · -
OCR Scan
SRP300K d137 smd diode rg3j 005 BYW36 v SMD ZENER DIODE CODES SMD zener diode 203 00201AP RGP15J RGP15K RGP15M BYV95C BYV96D
Abstract: 1N5062 .CPD05 . 194 1N5185 thru 1N5188 .CPD25 . 207 -
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BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 1N456 CPD64 1N456A 1N457 1N457A 1N458
Abstract: 1N4946 1N4946GP 1N5185 1N5185GP 1N5186 1N5186GP 1N5187 1N5187GP 1N5188 1N5188GP 1N5189 1N5189GP 1N5190 ON Semiconductor
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MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent 10BF10 10BF20 10BF40 10BF60 10BF80 10BQ015
Abstract: 1N4944 1N4944GP 1N4945 1N4946 1N4946GP 1N5185 1N5185GP 1N5186 1N5186GP 1N5187 1N5187GP 1N5188 1N5188GP ON Semiconductor
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FE16B MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 CRD801/D
Abstract: INDUSTRY STANDARD - VARIOUS BYW56 1N4817 INDUSTRY STANDARD - VARIOUS 1N5059 1N5185 Philips Semiconductors
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BYD73D CTB34M EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 1N4007 general instruments BYS21-45 PBYR3045WT BYD73G SB1035 PBYR1040
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