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1N5185 Datasheet

Part Manufacturer Description PDF Type
1N5185 Dionix 3.0A Iout, 50V Vrrm Fast Recovery Rectifier Scan
1N5185 General Instrument 3.0A Iout, 50V Vrrm Fast Recovery Rectifier Scan
1N5185 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N5185 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N5185 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N5185 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N5185 Terry Semiconductor 3.0A Iout, 50V Vrrm Fast Recovery Rectifier Scan
1N5185A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N5185A N/A Shortform Semicon, Diode, and SCR Datasheets Scan

1N5185

Catalog Datasheet MFG & Type PDF Document Tags

fr600

Abstract: 1N5185 TERRY SEMICONDUCTOR INC 33E D â  flTMTD77 GDOGOOb 1 â  7-¿)3>-/5~ TERRY m FAST RECOVERY RECTIFIERS OPERATING STORAGE TEMPERATURE -65°C to +175°C TYPE Peak Inverse Voltage Average Rectified Current Surge Forward Current Max, Reverse Current at TA=25°C Max. Forward Voltage Drop at Ta=25°C Max. Reverse Recovery Time VRRM lF(AV) Ta 'FSM |R Vf at lF(AV) trr (V) (A) (°C) (A) (uA) (A) (V) (ns) 1N5185 Series. 3 AMP. Plaslic Case:DO-201AD. Outlined 1N5185 50 3.0 25 200 5.0 3.0 1.3 150(3) 1N5186
-
OCR Scan
1N5189 MR850 MR851 MR852 MR854 fr600 TMTD77

1N5185

Abstract: 1N5188 Central PROCESS TM Semiconductor Corp. CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5185 thru 1N5188 1N5415 thru 1N5420 The Typical Electrical Characteristics
Central Semiconductor
Original
Abstract: Rectifiers, Fast Recovery (Continued) 2.0 lO (AMPS) 3.0 @ T a (°C) 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE I/ / GPR-1A VRRM (VOLTS) DO-15 50 GPR-3A 1N5185 1N5415 100 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF m a x @ IF = io -
OCR Scan
CPR2F-010
Abstract: 1N5185 Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3 @V(RM) (V) (Test Condition) I(RM) Max.(A) Reverse Current5.0u @V(R) (V)(Test Condition)50 I(RM) Max.(A) Pk. Rev. Current.10m @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)100â'™ Semiconductor American Microsemiconductor
Original
Abstract: PROCESS CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 11 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Ã/2,000Ã Back Side Metalization Ni/Au - 5,000Ã/2,000Ã GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5185 thru 1N5188 1N5415 thru 1N5420 BACKSIDE CATHODE R0 R2 (29-April 2010) w w w. c e n t r Central Semiconductor
Original
Abstract: Racttflers, Fast Recovery (Continued) lO (AM PS) ; · T A f C) IFSM -
OCR Scan
1O00V

CR2F-020

Abstract: 1N5185 Rectifiers, Fast Recovery (Continued) IO (AMPS) 2.0 3.0 @T (oC) A 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE GPR-1A DO-15 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 GPR-3A VRRM (VOLTS) 50 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF MAX @ IF =IO
Central Semiconductor
Original

1N5416

Abstract: 1N5185 Rectifiers, Past Recovery (Continued) lO {AMPS) 2.0 3.0 @TA(°C) 75 75 55 55 ÌFSM (AMPS) 50 50 80 80 CASE I GPR-1A I DO-15 / GPR-3A VRRM (VOLTS) 50 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF MAX @ IF = lO 1.3V 1.3V 1.3V 1.1V IR MAX @ VRRM 5.0jxA 5.0|a.A 5.0nA 1.0|aA trr (50V thru 400V) 200ns 200ns
-
OCR Scan

RGP15G diode

Abstract: diode GP20 (continued) 3.0 D0201AD li G3/ \ G4 D0201 1 M G3 < RGP30A 1N5185 RG3A 1N5415 RG4A GI910
-
OCR Scan
D0204AP RGP15D BYW36 RGP15G diode diode GP20 diode RGP30G gp20 diode zener diode cross reference 300v zener D0201AP RGP15A RGP20A RGP15B RGP20B

1N5185

Abstract: 1N5415 Rectifiers, Fast Recovery (Continued) IO (AMPS) 2.0 3.0 @TA (oC) 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE GPR-1A DO-15 GPR-3A VRRM (VOLTS) 50 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060 CR2F-060 1N5190 1N5420 800 CPR2F-080 CR2F-080 1000 CPR2F-100 CR2F-100 VF MAX @ IF =IO 1.3V
Central Semiconductor
Original

1N561

Abstract: -3A 1N5185 1N5415 1N5416 1N5417 1N5418 1N5420 CR2F-010 CR2F-020 CR2F-040 CR2F-060 CR2F-080 CR2F-100 1N5186
-
OCR Scan
1N561 1N4933 1N4934 1N4935 1N4936 1N4937 1N4942
Abstract: -15 1N5185 CR2F-0I0 CR2F-020 CR2F-040 CR2F-060 CR2F-080 CR2F-100 1N5186 1N5187 1N5188 1N5190 1.3V 1.3V 1.3V -
OCR Scan
DO-41 CPR1F-010 CPR1F-020 CPR1F-040 CPR1F-060 CPR1F-080

1N4933

Abstract: 1N4934 80 CASE GPR-1A DO-15 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416
Central Semiconductor
Original
1N4944 1N5617 1N4946 1N4947 CR2F020 CR1F-010 1N5615 CR1F-020 CR1F-040

d137 smd diode

Abstract: rg3j 005 D0201 G3 li \ Ì < RGP30A RGP30B RGP30D RGP30G 1N5185 1N5186 1N5187 1N5188 1N5189 ·
-
OCR Scan
SRP300K d137 smd diode rg3j 005 BYW36 v SMD zener diode 203 SMD ZENER DIODE CODES 00201AP RGP15J RGP15K RGP15M BYV95C BYV96D

BF244 datasheet

Abstract: 2N5133 equivalent 1N5062 .CPD05 . 194 1N5185 thru 1N5188 .CPD25 . 207
-
Original
BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 1N456 CPD64 1N456A 1N457 1N457A 1N458

MUR1560 equivalent

Abstract: 1N4936 equivalent 1N4946 1N4946GP 1N5185 1N5185GP 1N5186 1N5186GP 1N5187 1N5187GP 1N5188 1N5188GP 1N5189 1N5189GP 1N5190
ON Semiconductor
Original
MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent 10BF10 10BF20 10BF40 10BF60 10BF80 10BQ015

FE16B

Abstract: MBR0540LT1 1N4944 1N4944GP 1N4945 1N4946 1N4946GP 1N5185 1N5185GP 1N5186 1N5186GP 1N5187 1N5187GP 1N5188 1N5188GP
ON Semiconductor
Original
FE16B MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 CRD801/D

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent INDUSTRY STANDARD - VARIOUS BYW56 1N4817 INDUSTRY STANDARD - VARIOUS 1N5059 1N5185
Philips Semiconductors
Original
BYD73D CTB34M EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 1N4007 general instruments BYS21-45 PBYR3045WT BYD73G SB1035 PBYR1040
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