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1N4532 Datasheet

Part Manufacturer Description PDF Type
1N4532 EIC Semiconductor High Speed Switching Diodes Original
1N4532 Philips Semiconductors High-speed Diodes Package: SOD66 (DO-41) Original
1N4532 Philips Semiconductors High Speed Silicon Diodes Original
1N4532 General Diode Silicon Diode Selection Guide Scan
1N4532 General Electric Semiconductor Data Handbook 1977 Scan
1N4532 General Electric Semiconductor Data Book 1971 Scan
1N4532 International Components Silicon Switching Diode Scan
1N4532 Microsemi Computer Switching Diodes Scan
1N4532 Microsemi Computer Diode General Purpose Switching Scan
1N4532 Microsemi COMPUTER DIODE General Purpose Switching Scan
1N4532 Motorola Motorola Semiconductor Datasheet Library Scan
1N4532 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N4532 N/A Basic Transistor and Cross Reference Specification Scan
1N4532 N/A GE Transistor Specifications Scan
1N4532 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N4532 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N4532 N/A The Diode Data Book with Package Outlines 1993 Scan
1N4532 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N4532 N/A Shortform Data and Cross References (Misc Datasheets) Scan
1N4532 Philips Semiconductors High-speed diodes Scan
Showing first 20 results.

1N4532

Catalog Datasheet MFG & Type PDF Document Tags

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 MILLI-HEATSINK DIODE (MHD) 1N4532-1N4534 Ì 0.100 r l,JlJ T 0.090 0J- . 0.120 nTìfiT 1 "H ,-1 ir , Silicon Diodes 1N4154 SEE PAGE 205 r-â'"I 1N4151,2,3 1N4454 1N4532,3,4 This family of , MHD618 1N4532 1N4152 1N4153 IN4533 IN4534 Reverse Recovery Time of ' 4 nanoseconds maximum â'¢ â , Forward Surge (1 /¿sec. pulse) Power Dissipation Temperature Operating Storage 1N4454 1N4532 50 , +200 â  1N4153 1N4534 50 1N4151, 2, 3 1IM4454 1N4532, 3, 4 DHD MHD Volts mA mA mA mA °C
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OCR Scan
1N4151 equivalent Diode Equivalent 1n4151 Scans-00103068 in4454 1N4151-1N4153 JS-2-65-11

1N4532

Abstract: 1N4531 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531, 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr
Semtech Electronics
Original

PJ 949 diode

Abstract: bbSBiai ooeb'iob m N AMER PHILIPS/DISCRETE « apx bSE 1N4531 1N4532 D , 1N4532 75 75 Continuous reverse voltage VR max. Repetitive peak forward current 'frm , b b s a ^ i oo2bio? 'isa « 1N4531 1N4532 N AMER PHILIPS/DISCRETE y apx bTE v , reverse voltage Repetitive peak reverse voltage 1N4532 VR max. 75 75 75 75 V RRM , h M4531 High-speed silicon diodes N AMER PHILIPS/DISCRETE 1N4532 b'lE D Forward
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OCR Scan
PJ 949 diode DO-34 53T31

1N4532

Abstract: 1N4531 1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : · High switching speed , Current 1N4532 Forward Voltage Diode Capacitance Test Condition VR = 20 V VR = 20 V , Tj = 150 °C VR = 50 V VF 1N4531 1N4532 VR = 50 V , Tj = 150 °C IF = 10 mA Cd f = 1MHz ; VR = 0 , 1N4532 Trr RL = 100 ; Measured at IR = 1 mA Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION
EIC Semiconductor
Original

1N4531

Abstract: 1N4532 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531, 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr
Semtech Electronics
Original

1N4532

Abstract: IN4532 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES â , current: max. 450 mA. DESCRIPTION The 1N4531,1N4532 are high-speed switching diodes fabricated in planar , CHARACTERISTICS Tj = 25 °C; unless otherwise specified. 1N4531 ; 1N4532 SYMBOL PARAMETER CONDITIONS MIN. MAX , High-speed diodes 1N4531 ; 1N4532 GRAPHICAL DATA 300 'f (mA) 200 100 MBG4S0 , Product specification High-speed diodes 1N4531 ; 1N4532 10J (HA) 102 10 10" 10- 100 Tj
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OCR Scan
IN4532 IN4531 S0068 IR 10D DIODE MSA212

1N3064

Abstract: in4454 Surge Current, lsec 1N3064 . 0.5A 1N4454.-1. 1A 1N4532 , 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 ABSOLUTE MAXIMUM RATINGS, XT 29*C Reverse Breakdown Voltage , 1N4454-1 1N4532 Capacitance 2pF ® Vn = OVdc f = 1MHz Vdg * 50mV (pktopk) Forward Voltage l.OVdc ® If
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OCR Scan
MIL-S-19500/144 DO-35 JTX1N3064 IN4454-1
Abstract: . 75mA , 0.5A Operating , , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 U IK J U L . General Purpose , 1N4454-1 1N4532 Reverse Current @ is o ' c Reverse Current @ 25°C Reverse Breakdown , JTXV 1N4532 J, JTX I JTXV 1N4532 I S o e c D 1.0 M IN .- 1 .5 MAX. .0 1 8 -.0 2 2 A -
OCR Scan
100//A 1N4S32

1N3064

Abstract: 1N4532 RATINGS, AT 25°C JA N N4454; JAN, JANTX && JANTXV 1N4454 jan, ja n tx & ja n tx v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 i FEATURES · Metallurgical Bond JA N TX1N 3064 Reverse Breakdown Voltage , . 200mA 1N4532 . 125mA Surge Current, lse c 1 N 3 0 6 4 . 0.5A 1N4454.-1. 1A 1N4532 , o o n c < 3pF Forward Recovery Voltage Forward Recovery Time Type 1N3064 1N4454 1N4454-1 1N4532
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OCR Scan
JANTX 1N3064

1N4531

Abstract: 1N4534 1N4531 1N4534 1N4532 1N4536 1N4533 These diodes are in a glass sealed envelope and are suitable , general rectification Cathode band color and marking Part no. 1N4531 1N4532 1N4533 1N4534 1N4536 , 2 2 2 P (mW) 500 500 500 500 500 1N4531 1N4532 1N4533 1N4534 1N4536 100 75 40 75 35 75 , -65 - +200 -6 5 -+ 2 0 0 -65 - +200 Diodes n o H in o o 63 1N4531,1N4532,1N4533 , 0.1 50 100 20 4 4 1N4532 0.491 0.53 0.59 0.62 0.55 0.59 0.67 0.70 0.49 0.53 0.59 0.62
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OCR Scan

IN4531

Abstract: IN4532 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed , 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 , diodes 1N4531; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL , Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 GRAPHICAL DATA
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Original
MAM156

1N4532

Abstract: 1N4531 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 75 , 1N4531 1N4532 1N4531 1N4532 IR IR IR IR 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd 4 2 pF pF 1N4531 1N4532 1N4532 trr trr trr 4 2 4 ns ns ns Vfr
Semtech Electronics
Original

Switching Diodes

Abstract: 1N4531 TH97/10561QM 1N4531 ~ 1N4532 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : · High switching speed: max. 4 ns 1.00 (25.4) min , 100 ; Measured at I R = 1 mA 1N4531 IR Reverse Current 1N4532 Forward Voltage Diode Capacitance Reverse Recovery Time Page 1 of 2 Test Condition 1N4531 1N4532 1N4531 1N4532 Min , /1033 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS
EIC Semiconductor
Original
Switching Diodes

IN3064

Abstract: in4454 General Purpose jan, jantx & jantxv 1n4454-1 Switching 1n4532; jan, jantx & jantxv 1n4532 ABSOLUTE , , 1N3064.75mA 1N4454.-1.200mA 1N4532 .125mA , 1N4454.-1.1A 1N4532 . 0.5A Operating Temperature Range , 1N3064 1N4454 1N4454 1 1N4532 O.ljjAdc Vr = 50V 100/jAdc @ Vn = 50V 75Vdc @ In = 5/uAde 4ns @ Ir - In , , JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 j, jtx s. jtxv 1n4532 I -Câ'"| inches
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OCR Scan
JANTX1N3064 IN3064 diode in3064 diode 1n4454

1N4532

Abstract: 1N4531 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531, 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA A A 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr
Semtech Electronics
Original

in4531

Abstract: 1N4532 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed , Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes , Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 ELECTRICAL , High-speed diodes 1N4531; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage
Philips Semiconductors
Original
Abstract: 1 N 4531 1N4532 1N4533 1N4534 1N4536 Diode, switching, leaded Dimensions (Units : mm , 31R 1N4532 Black 32R 1N4533 Black 33R 1N4534 Black 34R 1N4536 Black , Vrm (V) V r (V) 1N4531 100 75 450 150 200 1N4532 75 50 450 150 , dissip­ ation Peak reverse voltage 63 1N4531,1N4532,1N4533,1N4534,1N4536 Switching diodes , 30 mA o 50 mA O 100 mA e 200 mA O 250 mA 1N4532 e 100 HA 75 Tà -
OCR Scan

1N4532

Abstract: 1N4531 nNI4531 1N4532 Diodes in the sub-miniature DO-34 envelope intended for fast logic and general purpose , -34 (SOD-68). 1N4531 1N4532 Continuous reverse voltage VR max. 75 75 V Repetitive peak forward , 1N4532 â I ^53^31 â¡D2b^D7 T5à HAPX N AflER PHILIPS/DISCRETE bTE D RATINGS (t < 1 Ms) (t < 1 s , accordance with the Absolute Max ¡mum System (IEC 134) 1N4531 1N4532 Continuous reverse voltage VR , QDSb^Ofl flT4 II bTE T> IAPX Forward recovery voltage for 1N4532 when switched to lp = 100 mA at tr
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OCR Scan
NI4531 I---25
Abstract: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes , sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION â'¢ Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes fabricated in , ; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER , Sep 03 3 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 NXP Semiconductors
Original

in4531

Abstract: IN453 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed , 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 , specification High-speed diodes 1N4531; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise , Apr 03 3 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532
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Original
IN453

1N4454UR-1

Abstract: 1N3064 , SILICON, SWITCHING TYPES 1N3064, 1N4454, 1N4454-1, 1N4532, AND 1N4454UR-1 JAN, JANTX, AND JANTXV The , 4.0 -55 to +175 50 250 1N4454-1 75 50 200 2/ 1 ,000 4.0 -55 to +175 50 250 1N4532 75 50 125 3/ 500 , .022 0.46 0.56 6 G .080 .120 2.03 3.05 1N4532 «0 .050 .065 1.27 1.65 3.4 L 1.000 1.500 25.40 , , 1N4454, and 1N4454-1 and .010 (.25 mm) for 1N4532 from the diode body to the end of the lead. Outside , 1N3064 1N4532 1N4454 and 1N4454-1 I0 = 75 mA dc I0 = 125 mA dc I0 = 200 mA dc IF = 75 mA dc IF = 125 mA
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OCR Scan
G000125 QD343E5 MIL-S-19500/144H MIL-S-19500/144G MIL-S-19500 D0-213AA

1N4532

Abstract: 1N4531 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531; 1N4532 High-speed , Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes , NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 ELECTRICAL , diodes 1N4531; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage
NXP Semiconductors
Original
Showing first 20 results.