Datasheet Search Results			1 - 50 of about 91 for 1N4151
	1N4151	APD Semiconductor, Inc.	Planar Diodes	66.16 Kb,  1 Pages.
	1N4151	APD Semiconductor, Inc.	Planar Diodes, DO-35 Case	64.5 Kb,  1 Pages.
	1N4151	BKC International	50 V, 500 mW high speed diode	38.97 Kb,  1 Pages.
	1N4151	CEIEC Shenzhen	Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin	29.8 Kb,  2 Pages.
	1N4151	Central Semiconductor	Silicon Switching Diode, DO-35	71.64 Kb,  1 Pages.
	1N4151	Chenyi Electronics	SMALL SIGNAL SWITCHING DIODE	168.21 Kb,  3 Pages.
	1N4151	Codi Semiconductor, Inc.	High Speed Silicon Diodes, DO-35	87.52 Kb,  2 Pages.
	1N4151	Continental Device India Limited	DO-35 Switching Diodes (500mW)	184.85 Kb,  2 Pages.
	1N4151	Continental Device India Limited	Semiconductor Device Data Book 1996	28.47 Kb,  1 Pages.
	1N4151	Crimson Semiconductor	SILICON DIODES	33.49 Kb,  1 Pages.
	1N4151	DC Components Co., Ltd.	TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES	177.84 Kb,  2 Pages.
	1N4151	Diodes, Inc.	High Voltage Rectifiers / Diodes	46.6 Kb,  1 Pages.
	1N4151	Diodes, Inc.	DIODE SWITCHING DIODE 50V 0.15A 2DO-35	27.97 Kb,  1 Pages.
	1N4151	Diodes, Inc.	Short Form Selection Guide	3107.54 Kb,  129 Pages.
	1N4151	Diodes, Inc.	HIGH VOLTAGE RECTIFIERS / SWITCHING DIODES	45.59 Kb,  1 Pages.
	1N4151	Diodes, Inc.	FAST SWITCHING DIODE	47.99 Kb,  1 Pages.
	1N4151	Diotec Semiconductor	Small Signal Si-Diodes	18.06 Kb,  2 Pages.
	1N4151	EIC Semiconductor, Inc.	High Speed Switching Diodes	27.98 Kb,  2 Pages.
	1N4151	Fairchild Semiconductor	DIODE ULTRA FAST RECOVERY RECTIFIER 75V 0.15A 2DO-35 BULK	32.56 Kb,  2 Pages.
	1N4151	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	41.38 Kb,  1 Pages.
	1N4151	Fairchild Semiconductor	High speed diode. Working inverse voltage 50 V.	334.37 Kb,  10 Pages.
	1N4151	Fairchild Semiconductor	High Conductance Fast Diode	126.66 Kb,  5 Pages.
	1N4151	FCI Semiconductor	Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin	51.97 Kb,  1 Pages.
	1N4151	Galaxy Semi-Conductor Holdings Limited	SMALL SIGNAL SWITCHING DIODE	79.51 Kb,  3 Pages.
	1N4151	General Electric	Semiconductor Data Handbook 1977	613.22 Kb,  5 Pages.
	1N4151	General Electric	Semiconductor Data Book 1971	479.27 Kb,  1 Pages.
	1N4151	General Semiconductor, Inc.	Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin	114.96 Kb,  4 Pages.
	1N4151	General Semiconductor, Inc.	SMALL SIGNAL DIODE	151.37 Kb,  3 Pages.
	1N4151	General Semiconductor, Inc.	SMALL SIGNAL DIODES	213.35 Kb,  4 Pages.
	1N4151	GOOD-ARK Electronics	Small-Signal Diode Fast Switching Diode	161.91 Kb,  3 Pages.
	1N4151	HY Electronic Co., Ltd.	HIGH-SPEED SWITCHING DIODE	86.34 Kb,  2 Pages.
	1N4151	International Semiconductor, Inc.	Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin	123.75 Kb,  1 Pages.
	1N4151	ITT Components	Misc. Data Book Scans 1975/76	41.1 Kb,  1 Pages.
	1N4151	ITT Semiconductors	Semiconductor Summary 1969	41.98 Kb,  1 Pages.
	1N4151	Lite-On Technology Corporation	FAST SWITCHING DIODE	17.04 Kb,  1 Pages.
	1N4151	Micro Commercial Components	500 mW 75 V Silicon Epitaxial Diode	85.36 Kb,  3 Pages.
	1N4151	Micro Commercial Components	500mW 75 Volt Silicon Epitaxial Diode	74.52 Kb,  3 Pages.
	1N4151	Microsemi Corporation	Computer Switching Diodes	140.87 Kb,  3 Pages.
	1N4151	Microsemi Corporation	Computer Diode	30.98 Kb,  1 Pages.
	1N4151	N/A	The Diode Data Book with Package Outlines 1993	94.22 Kb,  2 Pages.
	1N4151	National Semiconductor	Switching Diodes	29.78 Kb,  1 Pages.
	1N4151	National Semiconductor	Silicon Single Junction Diodes	108.21 Kb,  1 Pages.
	1N4151	National Semiconductor	General Purpose & Specialty Surface Mount Diodes	19.52 Kb,  1 Pages.
	1N4151	National Semiconductor	Diodes	31.56 Kb,  1 Pages.
	1N4151	National Semiconductor	Diode Data	135.88 Kb,  1 Pages.
	1N4151	Panasonic	Silicon epitaxial planar type diode.	41.91 Kb,  1 Pages.
	1N4151	Philips Semiconductors / NXP Semiconductors	High-speed diodes	204.12 Kb,  8 Pages.
	1N4151	Philips Semiconductors / NXP Semiconductors	ULTRA-HIGH-SPEED SILICON DIODES	66.82 Kb,  3 Pages.
	1N4151	Philips Semiconductors / NXP Semiconductors	High-speed diodes	56.29 Kb,  8 Pages.
	1N4151	Rectron Semiconductor	SIGNAL DIODE	11.64 Kb,  1 Pages.
	Datasheets per page:  50 | 250 | 500

Fulltext Datasheet Results		1 - 50 of about 211 for 1N4151
	First line: 1N4151 1N4151 SIGNAL DIODE Abstract: .. 1N4151 SIGNAL DIODE. Absolute Maximum Ratings Ta=25 �C Items Symbol Ratings Unit. Reverse Voltage VR 50 V. Reverse Recovery Time trr 2 ns. Power Dissipation 3.33mW 33mW / �C 25 �C P 500 mW. Forward Current ..  Tags: BV 050  1N4151  "SIGNAL DIODE"   1N4151	11.64 Kb	1 Pages	Original
	First line: EPITAXIAL PLANAR DIODES Mechanical Dimensions JEDEC D0-35 Abstract: .. 1N4151. Data Sheet 500 mW EPITAXIAL PLANAR DIODES. 1N4151. Units. Volts Volts. .. 215 .. .. 500 ..  Tags: in4151*  1n4151   datasheet abstract..	51.98 Kb	1 Pages	Original
	First line: diode led ir Silicon epitaxial planar diode Fast swithching diodes 500mW power dissipation diode also available Mini-MELF case with type designation LL4151 1N4151 Abstract: .. CE 1N4151. CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE. FEATURES . Silicon epitaxial planar diode. . Fast swithching diodes. . 500mW 500mW power dissipation. . The diode is also available in the Mini ..  Tags: diode led ir   1N4151	168.21 Kb	3 Pages	Original
	First line: 1N4151 SMALL SIGNAL DIODES DO-35 Abstract: .. 1N4151 SMALL SIGNAL DIODES. FEATURES. ♦ Silicon Epitaxial Planar Diode. ♦ Fast switching diode. ♦ This diode is also available in other case styles including the SOD-123 SOD-123 case with the type designation ..  Tags:   1N4151	213.34 Kb	4 Pages	Original
	First line: 1N4151 FAST SWITCHING DIODE POWER SEMICONDUCTOR Abstract: .. Characteristic Symbol 1N4151 Unit. Non-Repetitive Peak Reverse Voltage @ 5.0μA VRM 75 V. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 50 V. RMS Reverse ..  Tags:   1N4151	17.05 Kb	1 Pages	Original
	First line: 1N4151 SWITCHING DIODE Features Fast Switching High Reliability High Conductance Surface Mount Version vailable (LL4151) Abstract: .. DS12014 DS12014 Rev. G-2 1 of 1 1N4151. www.diodes.com Diodes Incorporated. 1N4151. FAST SWITCHING DIODE. Features. Fast Switching High Reliability High Conductance Surface Mount Version Available. LL4151 LL4151 ..  Tags:   1N4151	27.96 Kb	1 Pages	Original
	First line: 1N4151 SWITCHING DIODE Features Fast Switching High Reliability High Conductance Surface Mount Version vailable (LL4151) Abstract: .. Characteristic Symbol 1N4151 Unit. Non-Repetitive Peak Reverse Voltage @ 5.0A VRM 75 V. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 50 V. RMS Reverse ..  Tags:   1N4151	47.99 Kb	1 Pages	Original
	First line: 1n4150 philips M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Abstract: .. 1N4150 1N4150 ; 1N4151; 1N4153 1N4153 High-speed diodes. M3D176 M3D176 . 1996 Apr 19 2. Philips Semiconductors Product specification. High-speed diodes 1N4150 1N4150 ; 1N4151; 1N4153 1N4153 . FEATURES. • Hermetically sealed leaded ..  Tags: 1n4150 philips  1N4150   1N4150 1N4151 1N4153	70.61 Kb	9 Pages	Original
	First line: 1N4151 M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Abstract: .. 1N4150 1N4150 ; 1N4151; 1N4153 1N4153 High-speed diodes. M3D176 M3D176 . 1996 Sep 03 2. Philips Semiconductors Product specification. High-speed diodes 1N4150 1N4150 ; 1N4151; 1N4153 1N4153 . FEATURES. • Hermetically sealed leaded ..  Tags: 1N4151   1N4150 1N4151 1N4153	59.53 Kb	9 Pages	Original
	First line: in4152* in4152 TOSHIBA DFI^OTVaSD DGG^ail 9097250 TOSHIBA (DISCRETE /OPTO 09291 Silicon Epitaxial Planar Type 1N4151-1N4153 t>1- COMMUNICATION INDUSTRIAL APPLICATIONS. Abstract: .. .. , 67C 09291 Silicon Epitaxial Planar Type 1N4151-1N4153 Diode D T- t>1- o J TENTATIVE COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS, MAXIMUM ..  Tags: in4152 in4152*   datasheet abstract..	60.39 Kb	1 Pages	OCR Scan
	First line: INTERNATIONAL HIGH SPEED DIODES 1N4151 1N4152 1N4153 1N4154 -6V, Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Abstract: .. B K C INTERNATIONAL HIGH SPEED DIODES â– � BE D J 117â„ �3 00GGS 00GGS Û5 T 1N4151 †� 1N4152 1N4152 1N4153 1N4153 †� 1N4154 1N4154 ABSOLUTE MAXIMUM RATINGS †� Tm 2.0 ns @ 10 mA, -6V, 100ÌÌ †� C 4 pF Temperatures Storage Temperature ..  Tags:   datasheet abstract..	57.45 Kb	1 Pages	OCR Scan
	First line: 1N4148 diode SMD type 1N4151 1N4148 equivalent SMD diode 1N4148 SMD 1N4148 SMD 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Max. power dissipation Max. Verlustleistung Abstract: .. 1N4148 1N4148 , 1N4150 1N4150 , 1N4151, 1N4448 1N4448 . 1N4148 1N4148 , 1N4150 1N4150 , 1N4151, 1N4448 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden. Version 2005-08-15. Dimensions - Maße [mm] Max. power ..  Tags: 1N4151 1N4148 diode SMD type diode 1N4148 SMD  1N4150  1N4148.1N4448*  1N4148 SMD  1n4148 r  1N4148 equivalent SMD  1N4148   1N4148 1N4150 1N4151 1N4448	93.6 Kb	2 Pages	Original
	First line: 1N4151 SWICHING O-35 25.40 4.00 Abstract: .. 1N4151 FAST SWITCHING DIODE T D J_ c DO-35 DO-35 Dim Min Max A 25.40 — B — 4.00 C — 0.60 D — 2.00 All Dimensions in mm VISHAY /LITEMSI' f POWERSEMICONDUCTOR / Features Fast Switching High Reliability ..  Tags:   datasheet abstract..	71.69 Kb	1 Pages	OCR Scan
	First line: ^fas 1N4151 FAST SWITCHING DIODE LITEMS POWER SEMICONDUCTOR Fast Switching High Reliability High Conductance Abstract: .. ^fas 1N4151 FAST SWITCHING DIODE LITEMS POWER SEMICONDUCTOR Features ÃŒ †� Fast Switching †� High Reliability †� High Conductance †� Surface Mount Version Available LL4151 LL4151 Mechanical ..  Tags:   datasheet abstract..	48.7 Kb	1 Pages	OCR Scan
	First line: 1N4151 1N4151 DO-204AH (DO-35) Abstract: .. 1N4151. Small Signal Diode. Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles. including the SOD-123 SOD-123 case with the type designation ..  Tags: 1N4151 "SIGNAL DIODE"   1N4151	151.36 Kb	3 Pages	Original
	First line: High-speed diodes 1N4150; 1N4151; 1N4153 Hermetically sealed leaded glass 1N4150,1N4151, 1N4153 high-speed switching diodes fabricated SOD27 (DO-35) package planar technology, encapsulated hermetically seated leaded glass High switching speed: max. SOD27 (DO-35) packages. General application Continu Abstract: .. Philips Semiconductors Product specification High-speed diodes 1N4150 1N4150 ; 1N4151; 1N4153 1N4153 FEATURES DESCRIPTION • Hermetically sealed leaded glass The 1N4150 1N4150 ,1N4151, 1N4153 1N4153 are high-speed ..  Tags:   datasheet abstract..	222.81 Kb	8 Pages	OCR Scan
	First line: 5YM5EMI SEMICONDUCTOR_ 1N4151 Axial eaded Pack 1N4151M Axial eaded Pack LL4151 LL-34 Surface Mount Package Device Electrical Characteristics unless otherwise noted. Symbol Parameter Test Condition Limits Unit Breakdown Voltage lp=5pA Volts Reverse Leakage Current Vr=50V Forward Voltage lF=20mA Volts Abstract: .. 5YM5EMI SEMICONDUCTOR_ 1N4151 - DO -35 Axial -I eaded Pack age 1N4151M - DO -34 Axial -I eaded Pack age LL4151 LL4151 - LL-34 LL-34 Surface Mount Package Device Electrical Characteristics ta = 25 �c unless ..  Tags:   datasheet abstract..	157.79 Kb	1 Pages	OCR Scan
	First line: 1N4151 1N4151 Fast Switching Diode Abstract: .. 1N4151. Vishay Telefunken. 1 4 Rev. 3, 12-Feb-01 12-Feb-01 www.vishay.com Document Number 85523. Fast Switching Diode. Features. Silicon Epitaxial Planar Diode. Applications. Extreme fast switches. 94 9367 ..  Tags: 1N4151   1N4151	65.23 Kb	4 Pages	Original
	First line: 1N4151 1N4151 Fast Switching Diode Abstract: .. 1N4151 1N4151-TR or 1N4151-TAP - Tape and Reel / Ammopack. Parameter Test condition Symbol Value Unit. Repetitive peak reverse voltage VRRM 75 V. Reverse voltage VR 50 V. Peak forward surge current ..  Tags: 1N4151-TR*   1N4151	114.96 Kb	4 Pages	Original
	First line: 1N4151 1N4151 Current Leakage Compression Bond Construction Cost Abstract: .. 1N4151. 500mW 500mW 75 Volt Silicon Epitaxial Diode. DO-35 DO-35 . Features • Low Current Leakage • Compression Bond Construction • Low Cost. DIMENSIONS. INCHES MM. DIM MIN MAX MIN MAX NOTE. A --- .166 --- 4.2. B --- . ..  Tags: 1N4151   1N4151	39.22 Kb	3 Pages	Original
	First line: 1N4151 omponents 20736 Marilla Street Chatsworth Abstract: .. 1N4151. 500mW 500mW 75 Volt Silicon Epitaxial Diode. DO-35 DO-35 . Features • Low Current Leakage • Compression Bond Construction • Low Cost. DIMENSIONS. INCHES MM. DIM MIN MAX MIN MAX NOTE. A --- .166 --- 4.2. B --- . ..  Tags: 1N4151   datasheet abstract..	85.36 Kb	3 Pages	Original
	First line: omponents 21201 Itasca Street Chatsworth Abstract: .. 1N4151. 500mW 500mW 75 Volt Silicon Epitaxial Diode. DO-35 DO-35 . Features • Low Current Leakage • Compression Bond Construction • Low Cost. DIMENSIONS. INCHES MM. DIM MIN MAX MIN MAX NOTE. A --- .166 --- 4.2. B --- . ..  Tags:   datasheet abstract..	74.51 Kb	3 Pages	Original
	First line: M3D176 1N4150; 1N4151 High-speed diodes Abstract: .. 1N4150 1N4150 ; 1N4151 High-speed diodes. M3D176 M3D176 . 1999 Jun 01 2. Philips Semiconductors Product specification. High-speed diodes 1N4150 1N4150 ; 1N4151. FEATURES. • Hermetically sealed leaded glass SOD27 SOD27 DO ..  Tags: 1N4150   1N4150 1N4151	56.3 Kb	8 Pages	Original
	First line: SMALL SIGNAL SWITCHING DIODE Silicon epitaxial planar diode High speed switching diode power dissipation Abstract: .. RATINGS AND CHARACTERISTIC CURVES 1N4151. FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION. VO 5K 2nF VRF=2V. D.U.T.. 60. BLGALAXY ELECTRICAL. www.galaxycn.com. Document ..  Tags:   datasheet abstract..	79.51 Kb	3 Pages	Original
	First line: 1N914 SOT-23 BAV21 1N4148 SOD-123 1N4148(SOD-123) 1N4148 SOD-80C SMALL SIGNAL SWITCHING DIODES Package Reverse Voltage Volt Leaded DO-35 SOD-80C MiniMELF 500mW 1N4150 BAV100 BAL99 BAV99 BAV70 BAW56 1N4151 BAS16WS 1N914 1N4148 1N4448 BAV19 1/15/99 Notes: *1N914 rated 75mA MMBD914 rated 200mA Blue Tex Abstract: .. 1N4151 LL4151 LL4151 1N4151W 150 1.00 50. BAS16WS BAS16WS BAS16D BAS16D BAS16 BAS16 250 1.00 50. 1N914 1N914 MMBD914 MMBD914 75 / 200* 1.00 10. 1N4148 1N4148 LL4148 LL4148 1N4148WS 1N4148WS 1N4148W 1N4148W IMBD4148 IMBD4148 150 1.00 10. 100. 1N4448 1N4448 LL4448 LL4448 1N4448W 1N4448W IMBD4448 IMBD4448 150 1.00 ..  Tags: 1N4148 SOD-80C 1N4148(SOD-123) BAV21 bav70  bas16  1N914 transistor data sheet free download  1n914 surface mount diode  1N914 SOT-23  1N914 sot  1n914 equivalent  1N4150  1N4148 SOT-23  1N4148 SOD-123   1N4150 1N4151 1N914 1N4148 1N4448	32.04 Kb	1 Pages	Original
	First line: 1N4151 Small Signal Fast Switching Diodes Abstract: .. 1N4151 1N4151-TR or 1N4151-TAP 1N4151 Tape and Reel/Ammopack. Parameter. Test condition. Symbol. Value. Unit. Repetitive peak reverse voltage VRRM 75 V. Reverse voltage VR 50 V. Peak forward surge current ..  Tags: 1N4151-TR*   1N4151	112.34 Kb	5 Pages	Original
	First line: 1N4151 Small Signal Fast Switching Diodes Abstract: .. 1N4151 1N4151-TR or 1N4151-TAP 1N4151 Tape and Reel/Ammopack. Parameter. Test condition. Symbol. Value. Unit. Repetitive peak reverse voltage VRRM 75 V. Reverse voltage VR 50 V. Peak forward surge current ..  Tags:   1N4151	113.13 Kb	5 Pages	Original
	First line: 1N4151 List Abstract: .. 1N4151. Document ID Issued Date Revised Date Revision Page. DS-222943 DS-222943 2009/08/10 - A 5. 150mA 150mA Leaded Type. Switching Diode-75V Diode-75V . Features. Axial lead type devices for through hole design. Fast speed ..  Tags:   1N4151	127.29 Kb	5 Pages	Original
	First line: in4447* in4447 IN4154 IN4154* in4151* COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, IN4447, 1N4448 1N4449 Metallurgical Bond Planar Passivated DO-35 This series offers Metallurgical Bonding very popular general purpose switching applications. Abstract: .. COMPUTER DIODE Switching 1N4149 1N4149 , 1N4151, 1N4154 1N4154 1N4446 1N4446 , IN4447 IN4447 , 1N4448 1N4448 1N4449 1N4449 FEATURES †� Metallurgical Bond †� Planar Passivated †� DO-35 DO-35 DESCRIPTION This series offers Metallurgical ..  Tags: in4151* IN4154* IN4154 in4447 in4447*   datasheet abstract..	63.84 Kb	2 Pages	OCR Scan
	First line: IS/ISO 9002 Lic# QSC/L- 000019.2 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Abstract: .. SILICON PLANAR EPITAXIAL HIGH SPEED DIODE 1N4151. 500mW 500mW . DO- 35. Glass Axial Package. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise DESCRIPTION SYMBOL VALUE UNIT. Reverses Voltage ..  Tags:   datasheet abstract..	145.71 Kb	3 Pages	Original
	First line: 1N4151 1N4151 DO-35 Color Band Denotes Cathode Abstract: .. 1N4151. Small Signal Diode. Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired ..  Tags:   1N4151	32.56 Kb	2 Pages	Original
	First line: 1N4151 High switching speed: max. Reverse voltage:max. Peak reverse voltage:max. RoHS Free Abstract: .. 1N4151 HIGH SPEED SWITCHING DIODE. FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 50 V • Peak reverse voltage:max. 75 V • Pb / RoHS Free. MECHANICAL DATA : Case: DO-35 DO-35 Glass Case ..  Tags:   1N4151	27.99 Kb	2 Pages	Original
	First line: 1N4151 HIGH-SPEED SWITCHING DIODE .020 TYP. (0.51) 1.083(27.5) Abstract: .. 1N4151. FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE. IR. u A. TJ �C 0.1. 1. 0.01. 10. 0 100 200. 100. 1000. VR=75V. TYPICAL VALUES. VR=20V. TYPICAL VALUES. VR V FIG. 4 -DIODE CAPACITANCE VS. REVERSE ..  Tags:   1N4151	67.51 Kb	2 Pages	Original
	First line: IN4149 DIODe IN4446 IN4154*� IN4149* IN4154* COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 Metallurgical Bond Planar Passivatori DO-35 Tnis series otters Metallurgical Bonding very popular general purpose switching applications. Abstract: .. COMPUTER DIODE Switching 1N4149 1N4149 , 1N4151, 1N4154 1N4154 1N4446 1N4446 , 1N4447 1N4447 , 1N4448 1N4448 1N4449 1N4449 FEATURES †� Metallurgical Bond †� Planar Passivatori †� DO-35 DO-35 DESCRIPTION Tnis series otters Metallurgical ..  Tags: IN4154* IN4149* IN4154* DIODe IN4446 IN4149   datasheet abstract..	49.17 Kb	1 Pages	OCR Scan
	First line: SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Abstract: .. SILICON PLANAR EPITAXIAL HIGH SPEED DIODE 1N4151. 500mW 500mW . DO- 35. Glass Axial Package. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise DESCRIPTION SYMBOL VALUE UNIT. Reverses Voltage ..  Tags: carton box test   datasheet abstract..	146.52 Kb	2 Pages	Original
	First line: 1N4151 HIGH-SPEED SWITCHING DIODE .020 TYP. (0.51) 1.083(27.5) Abstract: .. 1N4151. FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE. IR. u A. TJ �C 0.1. 1. 0.01. 10. 0 100 200. 100. 1000. VR=75V. TYPICAL VALUES. VR=20V. TYPICAL VALUES. VR V FIG. 4 -DIODE CAPACITANCE VS. REVERSE ..  Tags:   1N4151	86.34 Kb	2 Pages	Original
	First line: fdh300 1N4148 SOT-23 1n914 surface mount diode 1N457 equivalent Abstract: .. MMBD 1200 FAMILY 1N914 1N914 1N914A 1N914A 1N916 1N916 1N916A 1N916A 1N3064 1N3064 1N4148 1N4148 1N4149 1N4149 1N4151 1N4154 1N4154 1N4305 1N4305 1N4446 1N4446 1N4448 1N4448 FDH600 FDH600 MMBD 1400 FAMILY 1N3070 1N3070 F0H400 F0H400 FOH444 FOH444 MMBD 1500 FAMILY 1N456A 1N456A 1N457 1N457 1N457A 1N457A 1N458A 1N458A 1N459 1N459 ..  Tags: 1N457 equivalent 1n914 surface mount diode 1N4148 SOT-23 fdh300   datasheet abstract..	38.02 Kb	1 Pages	OCR Scan
	First line: 1N4150 THRU 1N4448 HIGH SPEED SWITCHING DIODES VOLTAGE50-100V CURRENT0.15 Abstract: .. SYMBOL 1N4150 1N4150 1N4151 1N4448 1N4448 units. Maximum Recurrent Peak Reverse Voltage VRRM 50 75 100 V. Maximum power dissipation tamb=25 �C Ptot 500 500 500 mW. Maximum Forward Voltage VF 1.0/200 1.0/50 1 ..  Tags: 1N4150   1N4150 1N4448	34.13 Kb	1 Pages	Original
	First line: 1N4151 Abstract: .. 1N4151 Vishay Telefunken. Rev. 2, 01-Apr-99 01-Apr-99 2 4 www.vishay.de ∞FaxBack +1-408-970-5600 Document Number 85523. Electrical Characteristics Tj = 25 C Parameter Test Conditions Type Symbol Min ..  Tags:   1N4151	39.06 Kb	4 Pages	Original
	First line: 1N4151-1 QUALIFIED Abstract: .. 1N4151-1. ESA QUALIFIED. Switching Diode. FEATURES • Qualified to ESA/SCC 5101/025 1.53/ 2.28 ..  Tags: marking 1.0/50   1N4151-1	26.05 Kb	1 Pages	Original
	First line: 1N4151 Extreme fast switches Abstract: .. 1N4151. TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 12-Dec-94 . 1 4 Silicon Epitaxial Planar Diode. Applications Extreme fast switches. 94 9367. Absolute Maximum Ratings Tj = 25 C Parameter Test Conditions ..  Tags:   1N4151	40.82 Kb	4 Pages	Original
	First line: in4151*� in4151* IN4153 in4151 IN4150 bb53131 OOEb^Oa MARX auer philips/discrete 1N4150 1N4151 1N4153 ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes subminiature DO-35 envelopes. IN4150 primarily intended general purpose computer industrial applications. IN4151 IN4153 intended military industria Abstract: .. â– bb53131 bb53131 OOEb^Oa 202 MARX n auer philips/discrete bte d 1N4150 1N4150 1N4151 1N4153 1N4153 ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 DO-35 envelopes. The IN4150 IN4150 is primarily ..  Tags: IN4150 in4151 IN4153 in4151* in4151*Â   datasheet abstract..	85.38 Kb	3 Pages	OCR Scan
	First line: in4151 IN4153 1^53131 MARX AUER PHILIPS/DISCRETE 1N4150 1N4151 1N4153 ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes subminiature DO-35 envelopes, IN4150 primarily intended general purpose computer industrial applications. IN4151 IN4153 intended military industrial applications. QUICK REFERENCE Abstract: .. â– 1^53131 GGEbTÃœB EOE MARX N AUER PHILIPS/DISCRETE b^E Â � 1N4150 1N4150 1N4151 1N4153 1N4153 ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 DO-35 envelopes, The IN4150 IN4150 is primarily ..  Tags: IN4153 in4151   datasheet abstract..	85.08 Kb	3 Pages	OCR Scan
	First line: 1N3065 Silicon Diodes DO-35 Case TYPE Vrrm (mA) (mA) (ns) (PF) 1N914 1N914B 1N3062 Abstract: .. 1N3605 1N3605 75 150 0.88 20 2.0 2.0 1N4148 1N4148 100 150 1.0 10 4.0 4.0 1N4150 1N4150 50 200 1.0 200 4.0 2.5 1N4151 75 150 1.0 50 2.0 2.0 1N4152 1N4152 40 150 0.88 20 2.0 2.0 1N4153 1N4153 75 150 0.88 20 2.0 2.0 1N4154 1N4154 35 150 1.0 30 2.0 4.0 1N4444 1N4444 ..  Tags: 1N3065   datasheet abstract..	47.8 Kb	1 Pages	OCR Scan
	First line: 914B* 1N4147 1N918 National Semiconductor Diode Data Computer Diodes (Glass Package) Device Package Abstract: .. See Data for 1N914 1N914 1N4149 1N4149 DO-35 DO-35 See Datafor1N916 Datafor1N916 1N4150 1N4150 DO-35 DO-35 See Data for1N3600 for1N3600 1N4151 DO-35 DO-35 75 50 50 1.0 50 Note 2 D4 1N4152 1N4152 DO-35 DO-35 40 50 30 0.49 0.53 0.59 0.62 0.70 0.74 0.55 0.59 0.67 0.70 0.81 0 ..  Tags: 1N918 1N4147 914B* 1n4009   datasheet abstract..	154.36 Kb	1 Pages	OCR Scan
	First line: Silicon epitaxial planar diode Fast swithching diodes 500mW power dissipation diode also available DO-35 case with type designation 1N4151 LL4151 Abstract: .. designation 1N4151. MECHANICAL DATA . Case: MinMelf glass case SOD- 80 . Weight: Approx. 0.05gram 05gram . Dimensions in inches and millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings ..  Tags:   1N4151	168.02 Kb	3 Pages	Original
	First line: datasheets diode 1n3064 1N3062 1N4151 equivalent Silicon Diodes DO-35 Case TYPE VRRM (mA) 0.85 0.88 0.88 0.88 (mA) (ns) (pF) 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 Abstract: .. 1N4151 75 150 1.0 50 2.0 2.0. 1N4152 1N4152 40 150 0.88 20 2.0 2.0. 1N4153 1N4153 75 150 0.88 20 2.0 2.0. 1N4154 1N4154 35 150 1.0 30 2.0 4.0. 1N4444 1N4444 70 200 1.0 100 7.0 2.0. 1N4446 1N4446 100 150 1.0 20 4.0 4.0. 1N4447 1N4447 100 150 1.0 20 4.0 2.0. 1N4448 1N4448 ..  Tags: 1N4151 equivalent datasheets diode 1n3064 1N914B  1N4447  1N44*  1N3062   1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864	27.04 Kb	1 Pages	Original
	First line: LL4151 Small Signal Diodes MiniMELF FEATURES Silicon Epitaxial Planar Diode Fast switching diode MiniMELF Abstract: .. in other case styles including the DO-35 DO-35 case with the type designation 1N4151 and the SOD-123 SOD-123 case with the type designation 1N4151W. ♦. ♦. ♦. ELECTRICAL CHARACTERISTICS. Ratings at 25 �C ambient ..  Tags:   LL4151	153.94 Kb	4 Pages	Original
	First line: 1N914/1N4148*� 1N914 CJ 4148 1N914/1N4148* CJ 4148 CJ 4148 1N914 4148 4454 Abstract: .. SYMBOL 1N914 1N914 1N4148 1N4148 1N4150 1N4150 1N4151 1N4154 1N4154 1N4448 1N4448 1N4454 1N4454 UNITS. Maximum Recurrent Peak Reverse Voltage VRRM 100 100 50 75 35 100 75 V. Maximum Average Rectified Current Io 75 150 200 150 150 150 150 mA ..  Tags: 1N914/1N4148*Â DO-35 silicon Rectifier diodes  diode 4148  CJ 4148  1N914B  1N914/1N4148*  1N914 transistor data sheet free download  1N914 CJ 4148   1N914	177.83 Kb	2 Pages	Original
	First line: omponents 20736 Marilla Street Chatsworth Abstract: .. case styles including the DO-35 DO-35 case with the type designation 1N4151, and the MiniMELF. case with the type disignation DL4151 DL4151 . Maximum Ratings Symbol Rating Value Unit. VR Reverse Voltage 50 V. VRRM ..  Tags:   datasheet abstract..	221.7 Kb	3 Pages	Original
	Datasheets per page:  50 | 250 | 500

Access Notice

Unusual activity from your IP address or subnet. Our Cross reference data is temporarily hidden from view. One of our administrators will manually check this activity.

Specsheet Results
	1N4151S	ITT Intermetall	General Purpose Fast Rectifier	Specification

Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive