First line: 0258354 ADVANCED SEMICONDUCTOR 00063 ADVANCED SEMICONDUCTOR Slum diodes Point Contact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable Coaxial, Abstract: .. .1 K 1N26A 1N26A 1N26AR 1N26AR 1N26AM 1N26AM 1N26AMR 1N26AMR 2.0 11.3 K 1N26B 1N26B 1N26BR 1N26BR 1N26BM 1N26BM IN2BBMR 1.5 11.0 K 1N26C1N26CR 1N26CM 1N26CMR 1.5 9.5 D07 i l /— I 15.84/ .300 M r .085 .105 Í—I 12.16/ GM55 GM55 ffil -1.0 MIN—ft ic T .019 .021 .. Tags: in26in23weIN21Ddatasheet abstract..
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First line: IN230 IN26* 1N21C* IN23C 1N23F IION POINT ONTAT MIXER OlOOE Point ontact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable oaxial, Waveguide tripAbstract: .. .1 K 1N26A 1N26A 1N26AR 1N26AR 1N26AM 1N26AM 1N26AMR 1N26AMR 2.0 11.3 K 1N26B 1N26B 1N26BR 1N26BR 1N26BM 1N26BM 1N26BMR 1N26BMR 1.5 11.0 K 1N26C1N26CR 1N26CM 1N26CMR 1.5 9.5 D07. 1 1—1 15.841 .230 .300 M T m .105 Í—I 2.16/ H GLASS 125} -1.0 MIN.—f TWO PLACES .. Tags: 1N23FIN23C1N21C*IN26*IN230datasheet abstract..