First line: 0258354 ADVANCED SEMICONDUCTOR 00063 ADVANCED SEMICONDUCTOR Slum diodes Point Contact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable Coaxial, Abstract: .. X IN415F IN415F IN4I5FM' IN41BFMR IN41BFMR — 7.0 X IN832B IN832B 1N832BM 1N832BM — 7.0 X IN23G IN23G 1N23GR 1N23GR 1N23GM 1N23GM 1N23GMR — 6.5 X 1N23WG 1N23WG IN23WGM IN23WGM IN23WGMR IN23WGMR — 6.5 X 1N45ID 1N45ID IN415DM IN415DM 1N4I5GMR — 6.5 X 1N832C 1N832C 1N832CM 1N832CM — 6.5 X 1N23H 1N23H IN23HR IN23HR 1N23HM 1N23HM .. Tags: 1N26B1N26diode 1N78A30601N3745datasheet abstract..
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First line: 1N26 D037 in2510 1N3745 in23c IION POINT ONTAT MIXER OlOOE Point ontact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable oaxial, Waveguide triplAbstract: .. pyr 3BHBBBi X IN415F IN415F IN415FM IN415FM ' 1N4I6FMR — 7.0 SES X X 1N23G 1N23G 1N23GR 1N23GR 1N832B 1N832B 1N832BM 1N832BM IN23GM IN23GM 1N23GMR — 7.0 8.5 X X X 1N23WG 1N23WG 1N45IG 1N45IG 1N832C 1N832C 1N23WGM 1N23WGM IN415GM IN415GM 1N832CM 1N832CM 1N23WDMR 1N23WDMR 1N415GMR 1N415GMR — 6.5 6.5 6.5 £5 X X 1N23H 1N23H .. Tags: in23c1N3745in2510D0371N26datasheet abstract..