Datasheet Search Results			1 - 6 of about 6 for 1N21EM
	1N21EM	Advanced Semiconductor, Inc.	Silicon Point Contact Mixer Diodes	346.22 Kb,  8 Pages.
	1N21EM	MicroMetrics, Inc.	RF Mixer Diode, PN Mixer, UHF|SHF, Case Style	149.54 Kb,  2 Pages.
	1N21EM	N/A	The Diode Data Book with Package Outlines 1993	90.33 Kb,  2 Pages.
	1N21EMR	Advanced Semiconductor, Inc.	Silicon Point Contact Mixer Diodes	346.22 Kb,  8 Pages.
	1N21EMR	MicroMetrics, Inc.	RF Mixer Diode, PN Mixer, UHF|SHF, Case Style	149.54 Kb,  2 Pages.
	1N21EMR	N/A	The Diode Data Book with Package Outlines 1993	90.33 Kb,  2 Pages.

Fulltext Datasheet Results		1 - 4 of about 4 for 1N21EM
	First line: 1N21B* IN23B* 1N21B 1N22WB* 1N22 165- Vrrm IFSM Fmax if; VF(V) Vr(V) 1N21 SA' Lc<8. 5dB<f=3060MHz, Ploc=0. 5mW) 1N21A Sn' SflHt. Nr<3. Lc<7. 5dB(f=3060MHz, Ploc=0. 5mW) 1N21B Nr<2, Lc<6. 5dB(f=3060MHz, Ploc=0.5nW) 1N21BM Matched Pair Abstract: .. 5dB 48 1N21EM BS 2. 5 2 Sn' h'^S; «.lN21E lN21E  £|nl#t4 Matched Pair 48 1N21EMR BS 2. 5 2 Sn' b'SfI; «.lN21Ei lN21Ei |5j#t £-eiSt8tt Matched Pair 48 1N21ER 1N21ER BS 2. 5 2 Sn' V â– Siti «. 1N21E 1N21E  £ |S!#t4Ti9 ® ..  Tags: 1N22 1N22WB* 1N21B IN23B* 1N21B*   datasheet abstract..	112.39 Kb	2 Pages	OCR Scan
	First line: 1N21B* 1N23C IN23B* IN23B 1N22WB -165- Vrrm IFSM Fmax if; VF(V) Vr(V) 1N21 SA' Lc<8. 5dB<f=3060MHz, Ploc=0. 5mW) 1N21A Sn' SflHt. Nr<3. Lc<7. 5dB(f=3060MHz, Ploc=0. 5mW) 1N21B Nr<2, Lc<6. 5dB(f=3060MHz, Ploc=0.5nW) 1N21BM Matched Pair Abstract: .. 5dB 48 1N21EM BS 2. 5 2 Sn' h'^S; «.lN21E lN21E £|nl#t4 Matched Pair 48 1N21EMR BS 2. 5 2 Sn' b'SfI; «.lN21Ei lN21Ei |5j#t £-eiSt8tt Matched Pair 48 1N21ER 1N21ER BS 2. 5 2 Sn' V â– Siti «. 1N21E 1N21E £ |S!#t4Ti9 ®tt 48 1N21F 1N21F BS ..  Tags: 1N22WB IN23B IN23B* 1N23C 1N21B*   datasheet abstract..	108.83 Kb	2 Pages	OCR Scan
	First line: 1N231* uhf modulator alps 1N26 1n21gr 1N415C ALPHA SEMICONDUCTOR 4flE DGGllb3 Silicon Point Contact Mixer Diodes High Burnout Resistance Noise Figure, even Starved L.O. Mode Hermetically Sealed Alpha's point contact mixer diodes designed applications through Ka-band GHz). These diodes employ epitaxi Abstract: .. 1N831B 1N831B 1N831BM 1N831BM 6.5 062-001 5.0 3002 5002 — 1N21E 1N21E 1N21ER 1N21ER 1N21EM 1N21EMR 7.0 005-802 5.0 350 450 1.3 1N21WE1 1N21WE1 1N21WEM1 1N21WEM1 1N21WEMR1 1N21WEMR1 7.0 005-801 5.0 350 450 1.3 1N416E 1N416E 1N416EM 1N416EM 1N416EMR 1N416EMR 7.0 005-801 ..  Tags: 1N415C 1n21gr 1N26 uhf modulator alps 1N231*   datasheet abstract..	706.05 Kb	7 Pages	OCR Scan
	First line: 0258354 ADVANCED SEMICONDUCTOR 00063 ADVANCED SEMICONDUCTOR Slum diodes Point Contact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable Coaxial, Abstract: .. 1.3 1.3 7.3 7.3 EH -IBS- - «SPI _J __— s s 1N21E 1N21E 1N21ER 1N21ER 1N41BE 1N41BE 1N21EM M16EM M16EM 1N21EMR 1N416EMR 1N416EMR 7.0 7.0 BWtiitaKfey*. i\i -H.\f nrftyxi-j- s 1N21WE 1N21WE 1N21WEM 1N21WEM 1N2IWEMR 7.0 s 1N831A 1N831A ÃŒN83ÃŒAM 7.0 s 1N3B55A 1N3B55A ..  Tags: in23we 1N26 in26 1n23c   datasheet abstract..	351.29 Kb	8 Pages	OCR Scan

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Specsheet Results
	1N21EM	N/A	General Purpose UHF-MW Mixer Diode	Specification
	1N21EMR	N/A	General Purpose UHF-MW Mixer Diode	Specification

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