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5605992 Phoenix Contact FLOW CHART PROGRAMMING SOFTWARE visit Digikey Buy
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5605646 Phoenix Contact FLOW CHART PROGRAMMING SOFTWARE visit Digikey Buy
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5605996 Phoenix Contact FLOW CHART PROGRAMMING SOFTWARE visit Digikey Buy

1AV chart 2

Catalog Datasheet MFG & Type PDF Document Tags

1AV Series

Abstract: 1AV11F MEASURE ' MM OR MM/IN 1AV SERIES CHART 2 MECHANICAL CHARACTERISTICS /TVA SUPPLY VOLTAGE LEFT RIGHT , Honeywell Division CODE 9 I 929 SOLID STATE VANE SWITCH CATALOG LISTING 1AV SERIES CHART 2 third angle , CURRENT 1 c c r -2.5 TO 0 mA (-30 VOLT SUPPLY, 0 VOLT OUTPUT APPLIED) (Vs)A GREEN (OUTPUT) A\ SEE CHART , WINDOW VANE A TÏÏT TIN PLATED TERMINALS FOR 2,79/.I IO QUICK CONNECT 0,50/.020 THICK -VANE , CURRENT INTERRUPT PULSE 2 DURATION
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S8A8A

Abstract: 1AV Series Output V o ltag e s Output C u ire n t Line R egulation. Load Regulation See Rating Chart See Rating Chart 0.4% Typical highline/Lowline Full Load. 2% Typical for Main Output (+5VJ 5% Typical , P.) AT 5 0 'C O U TPUTS TYP . MAX. PC8 PCB ' ,A - ' 2 V , A PCB PCS ±vm * O t - . i 1aV, A 1 o í, a , 1aV, A a o « r 5 v, a O ` , A S V| SA y «. a ' 2,V , , a O * A ' S,V«,A o s .- 'V s , 8A 8A 8A , . 0 °C ~ 70 °C (Operating). 0.02 V -85 °C (Storage). % / V on * 5V 0-05 % / t on Other Outputs -2
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HPH12002M

Abstract: HPH12002 Total See Model S^ecton TaWe *2% i5% Noise & Rppie. (peak-to^eak) 5V Output 50 mV max 12V Output 70 , /2.4A ENVIRON MEN TAL Operating Ambient Temp -10 to +dOX (See Derating Chart) Storage Temp. -30 to â , ) I >01 07 i te « O® AH 0-20(74?) Weill PA) HPHBK01V HM12001M ft>ti»y 5V 1A 1ÃV M Pin # Function 1 +Vin 2 C 3 G 4 CL 5 +Vout 6 VADJ 7 L2 8 L1 oo4 pin 075 tne
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HPH05001M HPH12001M HPH12002M HPH12002 ET C 543
Abstract: TITLE: .620 [1 5 .7 5 ] GE 1 n I n R E .846 [2 1 .5 0 ] £ â¡ .543 [1 3 .8 0 ] - . 1 0 0 [2 .5 4 ] .050 [1 .2 7 ] 1ÃV .425 [1 0 .8 0 ] .120 .1 2 6 ~ J [3 .2 0 ] I , 0.035 [0 .9 0 ] tt O T .063 [1 .6 0 ] 0.128 [3 .2 5 ] H °L .180 ! [4 .5 7 ] - 1 0.047 [1 .2 0 ] .100 [2 .5 4 ] ' X 0 1 2 SPECIFICATIONS: Material: .042 [1 .0 7 ] â'" .086 [2 .1 9 ] â'" .450 [1 1 .4 3 ] .492 [1 2 .5 0 ] .536 [1 3 .6 2 ] PLATING 15 uin Gold 30 -
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00005C MTJ-88TUX1-FSD-PG-VLV-M21

5634-5CC

Abstract: 010040 SCREWS 2 PLACES f ♦ oír t à t t tfl-;-1- â  0.894 I . â'¢)â'¢ â'" * 0.400 ' I 1-°'V,44 =5 f â , 0.30-0.39 40 2 0.891.30 60 I.30-6.00 50 0.10-0.40 60 0.74-0.9! 0.40 0.58 40 1.06-1.50 60 , REJECTION dB SEE CHART (STOPBAND) VSWR: 1.6/1 IMPEDANCE so OHMS SWITCHING SPEED 5 (/SEC 50
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CSWF6158 5634-5CC 010040 M0180 MHA B 5634-5CCF 0Q02117
Abstract: 12 14 16 =V 0 x =40/ X X A X * 2 15 Ã' * 10 - i 0 0 â'˜ n n 10 18 2D V ds In V o lti Q V fc - 1â'"V - fc o V => fc e / ù S 11 & S22 SMITH CHART FIB 6 DIE AM PACKAGE PACKAGE DIMENSIONS IN INCHES ill 1H U ICK -
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F1077 150MH 7E410DT 1110A
Abstract: PIN DESCRIPTION PIN No. 1 BIAS 2 OUT 3 COMP 4 vcc 5 GND 6 M 7 , 8 8 %. (2) The pin supplies a reset signal determined by the CR combination connected to the TC , a power-on reset timer. G G n fiA ? b^7 â  128 TA8007AS TIMING CHART \J v o ,   - 5~VCC 10 2 60 ( 1 s) 16 500 -4 0 -1 0 5 -5 5 -1 5 0 260 ( 10 s) UNIT V mA V mW , '" *LOAD= 1~ 50mA â'" 0 .1 â'" â'" â'" 0 .0 1 â'" â'" â'" Iq l= 1 mA V 0 U T= 1°V -
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RCH7247 1500X
Abstract: for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with V qs up to 80% of Rated , . .V DS Drain-Gate Voltage (R q s = 2 0 k f i , 3.5 UNITS V V A A A V W W W /°C A A A °C °C Tc = 2 5 ° C , . .V GS Maximum Power Dissipation Tc = 2 5 ° C , . . P t Derated Above 2 5 °C -
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1-800-4-HARRIS

pj 939 diode

Abstract: pj 939 diode SS 12 /m g/cm 2 with V d s uP to 80% Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically , .VDGR Continuous Drain Current T c = 2 5 °C , - COSS C RSS R0JC R 6JA 2 FSL13AOD, FSL13AOR Source to Drain Diode Specifications , : 1. Pulse test, 300|us Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both V q s = 12V, Vpg = OV and V q s = °V, V qs = 8° 0/° ^ D S S (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1
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pj 939 diode pj 939 diode SS 12 diode PJ 41 MG pj 889 diode
Abstract: Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D 2. - , Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with V d s uP to 80% Rated Breakdown and VGS of 10V , Corporation 1998 , p j|e N u m b e r 4485 FSS23AOD, FSS23AOR Absolute Maximum Ratings T c = 2 5 °0 , Unless o th erw ise Specified FSS 2 3 AOD, FSS 2 3 AOR Drain to Source V o lta g e . .V DS Drain to Gate Voltage (R q s = 2 0 k£ 2 -
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FSS23A0R MIL-S-19500

MIL-S-19500g

Abstract: Operating Area Curve for Single Event Effects - SEE immunity for LET of 36MeV/m g/cm 2 with V qs up to 80 , Typically · Neutron - Maintain Pre-RAD Specifications for 3E12 Neu trons/cm 2 - Usable to 3E13 Neutrons/cm2 , . V DS Drain-Gate Voltage (R q s = 2 0 k£2 , -55 t o +150 300 UNITS V V A A A V Tc = + 2 5 °C , . . V GS Maximum Power Dissipation Tc = + 2 5 °C
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MIL-S-19500g FSF450D FSF450R
Abstract: timing, see the data timing chart. (Figure 2) 1998 05-12 - 7/16 TO SHIBA TD7623FN TEST , > m7 f i ? mtr ? F N v 3-WIRE AND |2 C BUS SYSTEM, 2.2GHz DIRECT TW O MODULUS-TYPE FREQUENCY , MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Supply Voltage 1 Supply Voltage 2 Power Consumption Operating Temperature Storage Temperature (Note 1) (Note 2) SYMBOL V eci VCC2 Pd Topr Tstg RATING 6.0 12 560 -20-85 , UNIT V V 1998 05-12 - 2/16 TO SHIBA TD7623FN PIN INTERFACE PL L 1998 05-12 - 3 -
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SSOP16 961001EBA1 SSOP16-P-225-0 23TYP

FSj264

Abstract: Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with V qs UP to 80% of Rated Breakdown and VGS of 10V , Corporation 1998 , p j|e N u m b e r 4340 1 FSJ264D, FSJ264R Absolute Maximum Ratings T c = 2 5 °0 , ). . V DGR Continuous Drain Current T c = 2 5 ° C , . . V GS Maximum Power Dissipation T c = 2 5 ° C , 1mA, V q 2 = 0V VGS = V DS> Ip - 1mA T c = -55°C T c = 25 °C T c = 125°C MIN 250 1.5 0.5 - TYP
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FSj264
Abstract: Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with V d s uP to 80 , FSL23A4D, FSL23A4R Absolute Maximum Ratings T c = 2 5 °0 , Unless o th erw ise Specified FSL23A4D , . .V D S Drain to Gate Voltage (R q s = 2 0 k£ 2). . V DGR Continuous Drain Current T c = 2 5 ° C , . .VGS Maximum Power Dissipation T c = 2 5 ° C -
OCR Scan

voltis

Abstract: FRL6796D Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad (Si) 2 x 1012 Neutrons 8 A, 100 V , rated drain voltage for both SEU and a prompt gamma level of 2 x 1012 rads (Si)/second. These MOSFETs , . The FRL6796 family is supplied in the JEDEC TO-205AF metal package. See chart on page 11 for other , '¢ - 10 (See Fig. 9) -0.2 (See Fig. 9)- - 32 (See Figs. 1 & 2) -55 to +150- V V A A A V W W W , V, lD = 1 mA 100 â'" â'" Gate-Threshold Voltage VGS(th] Vds = Vgs, Id = 1 mA 2 â'" 4 V Gate-Body
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FRL6796M FRL6796D FRL6796R FRL6796H voltis 1000K
Abstract:  60068 â'¢ Negative terminal identification 40/105/56 â'¢ Series number (047) SELECTION CHART FOR , ØD L L F 15 min. 4 +1 0 5 min. Ød Ød F Fig. 2 - Form CA: Long leads , ?28360 Revision: 12-Apr-13 Document Number: 28314 2 For technical questions, contact , Note â'¢ Unless otherwise specified, all electrical values in Table 2 apply at Tamb = 20 °C, P = 86 kPa to 106 kPa, RH = 45 % to 75 %. Table 2 ELECTRICAL DATA AND ORDERING INFORMATION UR (V Vishay Intertechnology
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2011/65/EU 2002/95/EC JS709A

TC320

Abstract: "MOSFET A3 Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with , . .V DS Drain-Gate Voltage (R q s = 2 0 k f i , 7.5 -55 t o +150 300 UNITS V V A A A V W W W /°C A A A °C °C Tc = 2 5 ° C , . .VGS Maximum Power Dissipation Tc = 2 5 ° C , Resistance V DS(ON) rDS(ON)12 VGS = -1 2 V ,ID = 2.5A I d = 1.5A, VGS = -12V T c = 25°C T c = 125
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TC320 FSL9110D FSL9110R MIL-S-1950
Abstract: ) SELECTION CHART FOR CR, UR, AND RELEVANT NOMINAL CASE SIZES (Ø D x L in mm) UR (V) CR (μF) 16 , Fig. 2 - Form CA: Long leads Fig. 3 - Form CB: Cut leads Fig. 4 - Form TFA: Taped in box , : 28314 2 For technical questions, contact: aluminumcaps1@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE , specified, all electrical values in Table 2 apply at Tamb = 20 °C, P = 86 kPa to 106 kPa, RH = 45 % to 75 %. Table 2 ELECTRICAL DATA AND ORDERING INFORMATION UR (V) CR 100 Hz (μF) NOMINAL Vishay Intertechnology
Original
Abstract: Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with V d s uP to 80% Rated Breakdown and VGS of 10V , Corporation 1998 , p j|e N u m b e r 4484 FSS23A4D, FSS23A4R Absolute Maximum Ratings T c = 2 5 °0 , . .V DS Drain to Gate Voltage (R q s = 2 0 k£ 2). . V DGR Continuous Drain Current T c = 2 5 ° C , . .VGS Maximum Power Dissipation T c = 2 5 ° C -
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digital multimeter DT 832

Abstract: ic str 6454 equivalent CHAUVIN ARNOUX 10 SUBSIDIARIES WORLDWIDE AUSTRIA Chauvin Arnoux Ges.m.b.H Slamastrasse 29/2 , . Page z 2 Already known for its sense of design and the combination of its original colours yellow , to the earth. Find R , : General requirements Part 2: IEC 61557-2: Insulation resistance Part 3: IEC 61557-3: Loop impedance , .A 732 delivered in blister pack C with 2 x 1.5 V battery and 1 operating manual > #7;#7;C.A 730
Chauvin Arnoux
Original
digital multimeter DT 832 ic str 6454 equivalent
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