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Part : EC1145TTS7.168MHZ Supplier : - Manufacturer : Bristol Electronics Stock : 32 Best Price : - Price Each : -
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168MH

Catalog Datasheet MFG & Type PDF Document Tags

L56C

Abstract: 2-10P1B Limited by Max. junction temperature. * VDD = 90V, Tch = 25°C, L= 16.8mH, RG = 25H, Iar = 6A This , CIRCUIT WAVE FORM Peak Iar = 6A, Rg=25H VDD = 90V, L = 16.8mH Fa i t t2 ,_bvdss , 2 1 BVDSS-VDD
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OCR Scan
2SK2544 2-10P1B L56C SC-46

2SK2544

Abstract: 2-10P1B . junction temperature. * Vdd = 90V, Tch = 25°C (initial), L = 16.8mH, Rg = 250, IAr = 6A This transistor , CIRCUIT WAVE FORM Peak Iar = 6A, Rg=25H VDD = 90V, L = 16.8mH Fa i T T2 ,_bvdss , 2 ^BvdSS-VDD'
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OCR Scan
Abstract: rating ; Pulse Width Limited by Max. junction temperature. * V d d = 90V, Tch = 25°C, L = 16.8mH, RG = , n rh rh TEST CIRCUIT Peak IaR -6A, Rq .-2 5 0 VdD -90V, L -16.8mH F a c = J_ t E as 2 -
OCR Scan
2SK2602
Abstract: temperature. * VDD = 90V, Starting Tch = 25°C, L=16.8mH R(j = 250, Ia r = 6A This transistor is an , Peak lAR = 6A, Rq = 25fì E _L .l .j2. Vdd = 90V, L = 16.8mH b 2 ByDSS-VDD 1998 11-12 5/5 - -
OCR Scan
2SK2777 2-10S1B

2SK2545

Abstract: transistor 2sk2545 Limited by Max. junction temperature. * VDD = 90V, Starting Tch = 25°C, L = 16.8mH, RG = 25H, Iar = 6A , = 16.8mH b 2 BvdSS-Vdd; 1998-11-12 5/5
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OCR Scan
2SK2545 transistor 2sk2545 SC-67 2-10R1B

K2777

Abstract: 2SK2777 : () VDD = 90V ch = 25 () = 16.8mH G = 25AR = 6A T L R I 3: JEDEC JEITA
Toshiba
Original
K2777 10VID 2-10S2B VDD400 20070701-JA
Abstract: = 16.8mH i í G - 2 5 í i , Ia r - öa 1. 2. GATE DRAIN (HEAT SINK) JEDEC This tran sisto , VDS (V) rt> m TEST CIRCUIT Peak IAR = 6 A , RG = 2 5 ü V d d = 90V, L = 16.8mH J_ 2 . BVDSS -
OCR Scan

2SK2602

Abstract: SC-65 90V, Tch = 25°C (initial), L = 16.8mH, Rg = 250, IAr = 6A This transistor is an electrostatic , Peak Iar = 6A, Rg=250 VDD â'"90V, L â'" 16.8mH FA 1 T T2 ,_RVDSS , 2 ^ BVDSS-VDD 2000-02-02 5/5
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OCR Scan
SC-65 2-16C1B 961001EAA2

719VXA-A018YSU

Abstract: TOKO 719vxa TYPE 108 12VXA 12mm TYPE 12VXA Frequency Range: 10-200kHz Inductance Range: 1-68mH Temperature Coefficient: 250ppm / C iLk .Ik rii Unit; mm Features · Large capacity bobbin accomm odates thicker wire sizes to provide higher inductance. · The ability to tune from top to bottom adds flexibility to your design. STANDARD PARTS SELECTION GUIDE TYPE 12VXA (Variable) TOKO Part Number 719VXA-T1007Z 719VXA-T10082 719VXA-T10092 719VXA-T1010Z 719VXA-T1Q11Z 719VXA-T1012Z 719VXA-T1013Z 719VXA-T1014Z 719VXA
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OCR Scan
719VXA-T1029Z 719VXA-A017A 719VXA-A018YSU TOKO 719vxa T1015 19VXA-T1044Z T1040 719VXA-T1015Z 719VXA-T1016Z 719VXA-T1017Z 719VXA-T1018Z 719VXA-T1019Z 719VXA-T1020Z

marking "3AA"

Abstract: LGS G 24 OV R 16.8mH RG = 25n, Iar = 6A This transistor is an electrostatic sensitive device. Please handle with , / rh m TEST CIRCUIT VDS WAVE FORM Peak Iar = 6A, rg=250 _BVPSS Vdd = 90V, L = 16.8mH b 2 BVDSS-VDD
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OCR Scan
marking "3AA" LGS G 24 OV R

L92C

Abstract: 2SK2777 . junction temperature. * VDD = 90V, Tch = 25°C, L=16.8mH RG = 25n, lAR = 6A This transistor is an , VDD = 90V, L = 16.8mH b 2 ByDSS-VDDJ 1997-12-11 5/5
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OCR Scan
L92C

2SK2545

Abstract: . * VDD=90V, Starting Tch = 25°C, L = 16.8mH, RQ = 25n, Ia r = 6A T h is tra n s is t o r is a n , SS-V D D TEST CIRCUIT Peak IAR = 6A, RG = 2 5 0 V d D = 90V, L=16.8mH 1998 11-12 - 5/5
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OCR Scan
100//A

2SK2602

Abstract: SC-65 . junction temperature. * VDD = 90V, Starting Tch = 25°C, L = 16.8mH, RG = 25H, IaR = 6A This transistor is , 16.8mH AS_ 2 ByDSS-VDD) 1998-11-12 5/5
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OCR Scan

2SK2545

Abstract: transistor 2sk2545 ; Pulse Width Limited by Max. junction temperature. * VDD = 90V, Tch = 25°C, L= 16.8mH, RG = 25H, Iar = , =25Ì1 Vdd = 90V, L = 16.8mH = J_ BVPSS . i^AS 2 1BvdSS-VDD- 1998-01-14 5/5
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OCR Scan

2sk2545

Abstract: transistor 2sk2545 = 16.8mH, RG = 250, Iar = 6A This transistor is an electrostatic sensitive device. Please handle , Iar = 6A, Rg=250 VDD = 90V, L = 16.8mH fa i t T2 ,_rvdss , eas-2 -l-i â'¢(bvdss-vdd} 2000-02-02 5/5
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OCR Scan

2-10P1B

Abstract: 2SK2544 . junction temperature. * VDD = 90V, Starting Tch = 25°C, L = 16.8mH, RG = 25H, IaR = 6A This transistor , FORM Peak Iar = 6A, Rg=25H VDD = 90V, L = 16.8mH Faâ'ž_J_ t t2 ,_bvdss EAS-2 BVDSS - VDD 1998-11-12
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OCR Scan
Abstract: Width Limited by Max. junction temperature. * VDD = 90V, Starting Tch = 25°C, L=16.8mH, Rg = 25 , l -12 - ( b v d ss VDD â'"90V, L=16.8mH 2 ByD SS-V DD 1998 11-12 5/5 - -
OCR Scan

K2602

Abstract: transistor marking 6A 90V, Tch = 25°C, L = 16.8mH, RG = 250, Iar = 6A This transistor is an electrostatic sensitive device , Peak Iar = 6A, Rg=25î1 VDD â'"90V, L â'" 16.8mH Fa 1 t t2 ,_BVDSS EAS-2 -L -I â'¢ ( BvDSS - VDD
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OCR Scan
K2602 transistor marking 6A
Abstract: functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 16.8mH, IAS = 5A, VDD Unisonic Technologies
Original
5N65Z 5N65ZL-TF1-T 5N65ZG-TF1-T QW-R502-910

S1998

Abstract: 90V, Starting Tch = 25°C, L = 16.8mH, RG = 25n, Ia r = 6A T his tra n s is to r is a n e le c tro sta , Ia r = 6A , Rq = 2 5 ì ì V d D = 90V, L = 16.8mH 1998 11-12 - 5/5
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OCR Scan
S1998

Schott

Abstract: 32018 temperature. * VDD = 90V, Starting Tch = 25°C, L=16.8mH R(j = 250, Ia r = 6A This transistor is an , Peak lAR = 6A, Rq = 25fì E _L .l .j2. Vdd = 90V, L = 16.8mH b 2 ByDSS-VDD 1998 11-12 5/5 -
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Original
Schott 32018

k2777

Abstract: Limited by Max. junction temperature. * VDD = 90V, Tch = 25°C, L= 16.8mH, RG = 25H, Iar = 6A This , CIRCUIT WAVE FORM Peak Iar = 6A, Rg=25H VDD = 90V, L = 16.8mH Fa i t t2 ,_bvdss , 2 1 BVDSS-VDD
Toshiba
Original

transistor 2sk2545

Abstract: 2SK2545 rating ; Pulse Width Limited by Max. junction temperature. * V d d = 90V, Tch = 25°C, L = 16.8mH, RG = , n rh rh TEST CIRCUIT Peak IaR -6A, Rq .-2 5 0 VdD -90V, L -16.8mH F a c = J_ t E as 2
Toshiba
Original
2SK2545 equivalent DR-6 2sk25454 GS-S
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