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Part Manufacturer Description Datasheet BUY
2-1601095-2 TE Connectivity (2-1601095-2) 131-166-014=TAB,PCB,STD,SMZ visit TE Connectivity

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Part : 3VA1216-6MH32-0AA0 Supplier : Siemens Manufacturer : Onlinecomponentscom Stock : - Best Price : $683.2000 Price Each : $683.2000
Part : GC80503CSM166MHZ Supplier : Intel Manufacturer : ComSIT Stock : 59 Best Price : - Price Each : -
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166-MH

Catalog Datasheet MFG & Type PDF Document Tags

ELPIDA DDR3

Abstract: Elpida GDDR5 Memory, Inc. 2002-2009 5B 200MHz (3-3-3) 5C: 200MHz (3-4-4) 6C: 166MH (3-4-4) 6E: 166MH (3-3-3) 7E , ) Mobile RAM Speed (SDRAM) Density / Bank 6B: 166MHz/CL3, 100MHz/CL2 75: 133MHz/CL3, 100MHz/CL2 , (II) BH: FBGA Organization 16: x16 32: x32 5A: 180MHz/CL3 6D: 166MHz/CL3 7B: 133MHz/CL3
Elpida Memory
Original
ELPIDA DDR3 Elpida GDDR5 elpida GDDR5 tsop ddr2 ram ELPIDA mobile DDR ECT-TS-1993 DDR3-1600J DDR3-1600 100MH 133MH 180MH

166MH

Abstract: tes 824 InNET TECHNOLOGIES T2 20 3 Electrical E L E C T R IC A L S P E C IF IC A T IO N S (REV. X) TURNS RATIO : (9 -7 ) : (1 -2 ) : (4 -5 ) INDUCTANCE: 1 - 5 (2,4 connected) LEAKAGE INDUCTANCE: 9 - 7 with (1,2,3,4 short) CWW: (9,8,7) to (1,2,3,4) 170pF MAX. 1MHz 30uH TYP., .01V, 10OKHz : 14.4 TO 16.6mH O 60mA, 0.1 Vac, 10KHz : 1 : .824 : .824 - o -0 -© D.C. RESISTANCE: ( 9 -7 ) ( 1- 2) (4 -5 ) HARMONIC DISTORTION: RETURN LOSS: in refera nee to 135 ohms a t 1 -5 (2,4 connected) 3.75 ohms
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OCR Scan
tes 824 10OKH 250KHZ 1500VAC
Abstract: maximum junction temperature 3. L = 16.6mH, IAS = 6A, VDD = 50V, RG = 25â"¦, Starting TJ = 25°C 4. ISD Unisonic Technologies
Original
6N90Z 6N90ZL-TA3-T 6N90ZG-TA3-T 6N90ZL-TQ2-T 6N90ZG-TQ2-T QW-R502-953
Abstract: 16.6mH, IAS = 6A, VDD = 50V, RG = 25â"¦, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD â Unisonic Technologies
Original
6N90L-TA3-T 6N90G-TA3-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TF1-T 6N90G-TF1-T

166MH

Abstract: mosfet 600V 20A W °C °C Drain(D) r new fo *1 L=16.6mH, Vcc=90V . e d Gate(G) n sig
Fuji Electric
Original
2SK2769-01MR mosfet 600V 20A

TO220F15

Abstract: 2SK2769-01MR =150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=16.6mH, Vcc=90V Electrical
Fuji Electric
Original
TO220F15 2SK2769-01MR equivalent SC-67
Abstract: maximum junction temperature 3. L = 16.6mH, I AS = 6A, V DD = 50V, R G = 25â"¦, Starting T J = 25°C 4 Unisonic Technologies
Original
6N90L QW-R502-492
Abstract: : Pulse width limited by maximum junction temperature 3. L = 16.6mH, IAS = 6A, VDD = 50V, RG = 25â Unisonic Technologies
Original
6N90L-T2Q-T 6N90G-T2Q-T 75D/W

2SK170GR

Abstract: 2SK170-GR 43T 2UEW-0,08?S 2UEW-0.08jS 2UEW-0.08{i INDUCTANCE 17.5mH 16.6mH 134/
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OCR Scan
2SK170-GR 2SK170GR v719 1S168 CMA12 2SK170-GR(F) DD1710D TA7344P D0171 TPS703 2SA1015-
Abstract: . 3. L=16.6mH, IAS=3A, VDD=50V, RG=25 â"¦, Starting TJ = 25°C 4. ISD≤3.0A, di/dt≤200A/μs, VDDâ Unisonic Technologies
Original
3N65K-MK QW-R205-009 3N65KL-TA3-T 3N65KG-TA3-T 3N65KL-TF3-T 3N65KG-TF3-T

diode gi

Abstract: ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC NUMBER 1 T3 T3 Inductor, LPRI = 1.66mH, Custom Coils P/N 5041 or Coiltronics P/N CTX05 , coated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ±5% (pins 9 to 10) 1 T4 T4 Power
Fairchild Semiconductor
Original
diode gi ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC 220 ac INVERTER without transformer ECE-A16Z220 KYNAR TDK pc40 ML4831 ML4831EVAL ML4830 205VDC 1384LM

2SK2769-01MR equivalent

Abstract: 2SK2769-01MR ±35 3.5 111 40 +150 -55 to +150 *1 L=16.6mH, Vcc=90V Equivalent circuit schematic Unit
Fuji Electric
Original
Abstract: Unit V A A V A mJ W °C °C Equivalent circuit schematic Drain(D) *1 L=16.6mH, Vcc Fuji Electric
Original

IR720

Abstract: ML4831CP . REF. DESCRIPTION MFR. PART NUMBER 1 T3 T3 Inductor, LPRI = 1.66mH, Custom Ciols P/N , , end pin #6 5th: 3T of #30 Kynar coated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ±5% (pins
Fairchild Semiconductor
Original
ML4831CP IR720 ml4821 eck-dns 600UH 1W FM modulator

MFR Yageo

Abstract: ECE-A16Z220 . DESCRIPTION MFR. PART NUMBER T3 Inductor, LPRI = 1.66mH, Custom Ciols P/N 5041 or Coiltronics P/N , coated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ± 5% (pins 9 to 10) T4 Power Xfmr, LPRI =
Micro Linear
Original
MFR Yageo inductor 600UH 35AWG 20k 1.5uF 400V 1N5061 SMA-454

diode gi

Abstract: DS483-1 . REF. DESCRIPTION MFR. PART NUMBER 1 T3 T3 Inductor, LPRI = 1.66mH, Custom Ciols P/N , , end pin #6 5th: 3T of #30 Kynar coated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ±5% (pins
Micro Linear
Original
DS483-1 ballast circuit diagram for T5 transistor electronic ballast for T5 wima MKP10 resistor yageo MKP-10 DS4831-01
Abstract: implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 16.6mH, IAS = 6A, VDD = 90V, RG = 25 â Unisonic Technologies
Original
6N65K-MT QW-R502-A95 6N65KL-TA3-T 6N65KG-TA3-T 6N65KL-TF3-T 6N65KG-TF3-T

D 5038 Transistor Horizontal

Abstract: 6Z220 : (Continued) QTY. 1 T3 REF. D ESC RIPTIO N MFR. PART N U M B ER (continued) T3 Inductor, LPR! = 1.66mH , pin #3, end pin #6 5th: 3T of #30 Kynarcoated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ±5%
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OCR Scan
D 5038 Transistor Horizontal 6Z220 pc40 core DATA motorola vcz

6Z220

Abstract: . PART N U M B ER (continued) T3 Inductor, LPR! = 1.66mH, Custom Ciols P/N 5041 or Coiltronics P/N , coated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ±5% (pins 9 to 10) T4 Power Xfmr, Lpri =
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OCR Scan

D 5038 Transistor Horizontal

Abstract: Pulse Transformer PCB _ _ REF. DESCRIPTION MFR. PART NUMBER T3 Inductor, Lpr / = 1.66mH, Custom , #3, end pin #6 5th: 3T of #30Kynar coated wire; start pin #7, end pin #8 NOTE: Gap for 1.66mH ±5%
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OCR Scan
Pulse Transformer PCB 30ky 150a PWM schematic diagram 12v DC L4830 CTX05-12545-1 E24/25 30AWG 32AWG CTX05-12546-1
Abstract: Memory, Inc. 2002-2009 5B 200MHz (3-3-3) 5C: 200MHz (3-4-4) 6C: 166MH (3-4-4) 6E: 166MH (3-3-3) 7E -
OCR Scan
KM416S16230A 44S64230A 416S16230AT-G 125MH 416S16230A 10/AP
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