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LTC2150CUJ-14#PBF Linear Technology LTC2150-14 - Single 14-Bit 170Msps ADCs; Package: QFN; Pins: 40; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT3150CGN#TRPBF Linear Technology LT3150 - Fast Transient Response, Low Input Voltage, Very Low Dropout Linear Regulator Controller; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1150CS8#TRPBF Linear Technology LTC1150 - ±15V Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4150CMS#TR Linear Technology LTC4150 - Coulomb Counter/Battery Gas Gauge; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1150CS8#PBF Linear Technology LTC1150 - ±15V Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4150CMS Linear Technology LTC4150 - Coulomb Counter/Battery Gas Gauge; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

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150/C Datasheet

Part Manufacturer Description PDF Type
150C Microsemi Silicon Controlled Rectifier Scan
150C024I Daico Industries Dual SP2T Switch Scan
150C025 N/A Short Form Datasheet and Cross Reference Data Scan
150C025B N/A Short Form Datasheet and Cross Reference Data Scan
150C040B Daico Industries Voltage Controlled Attenuator Scan
150C05 N/A Short Form Datasheet and Cross Reference Data Scan
150C05B N/A Short Form Datasheet and Cross Reference Data Scan
150C10 N/A Short Form Datasheet and Cross Reference Data Scan
150C100 N/A Short Form Datasheet and Cross Reference Data Scan
150C100B ABB Group Power Semiconductor Data Book 1976 Scan
150C100B Coors Components Silicon Controlled Rectifiers Scan
150C100B Microsemi Silicon Controlled Rectifier Scan
150C100B Microsemi Silicon Controlled Rectifier Scan
150C100B N/A Short Form Datasheet and Cross Reference Data Scan
150C100BF Microsemi Silicon Controlled Rectifier Scan
150C100BF Microsemi Silicon Controlled Rectifier Scan
150C100BFIL Microsemi Silicon Controlled Rectifier Scan
150C100BIL Microsemi Silicon Controlled Rectifier Scan
150C10B ABB Group Power Semiconductor Data Book 1976 Scan
150C10B N/A Short Form Datasheet and Cross Reference Data Scan
Showing first 20 results.

150/C

Catalog Datasheet MFG & Type PDF Document Tags

DTC114E SERIES

Abstract: DTA114E SERIES -92 TO-92 TO-92 TO-92 SC-75 SC-75 Temp. Range ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C , -92 TO-92 Temp. Range ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C ­55°C to +150°C
ON Semiconductor
Original
DTC114E SERIES DTA114E SERIES SC-70 DTA114EET1 DTA143EE DTC114E DTC114EET1 DTC114TE

semikron skiip 24 nab 125 t 12

Abstract: SKiiP 35NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 62 47 69 56 50 150 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 62 47 69 56 50 150 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 54 41 60 48 50 150 270 -40 . 175 Unit V A A A A A A V µs , IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Typical
SEMIKRON
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semikron skiip 24 nab 125 t 12 E63532

3nab

Abstract: skiip nab 125 SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 103 79 115 93 100 300 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 103 79 115 93 100 300 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 , - IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V , . results valid for Tj 150 (recomm. Top = -40 . +150°C) · for short circuit: Soft RGoff recommended
SEMIKRON
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3nab skiip nab 125

semikron skiip 81 AN 15 T

Abstract: 12NAB12T4 SKiiP 12NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 18 18 18 18 15 45 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 18 18 18 18 15 45 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 , IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Typical , valid for Tj150 (recomm. Top = -40 . +150°C) Inverse - Diode Tj = 25 °C Tj = 150 °C Tj = 175 °C
SEMIKRON
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semikron skiip 81 AN 15 T 12NAB12T4 SKIIP12NAB12T4V1

semikron skiip 24 nab 125 t 12

Abstract: miniskiip 29 SKiiP 34NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 47 36 52 43 35 105 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 47 36 52 43 35 105 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = , IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Remarks , = TS) · product rel. results valid for Tj150 (recomm. Top = -40 . +150°C) Inverse - Diode Tj =
SEMIKRON
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miniskiip 29 skiip 32 nab 12 t 18 skiip 32 nab 125 t 12 skiip 32 ac

miniskiip 29

Abstract: skiip nab 125 SKiiP 10NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 6 6 6 6 4 12 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 6 6 6 6 4 12 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 , VCES IC IC ICnom ICRM VGES tpsc Tj VRRM IF IF IFnom IFRM IFSM Tj Chopper - IGBT Tj = 25 °C Tj = 150 , . results valid for Tj150 (recomm. Top = -40 . +150°C) Inverse - Diode Tj = 25 °C Tj = 150 °C Tj = 175
SEMIKRON
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LM7905K

Abstract: TO257-F ­55 to 150°C ­65 to 150°C Semelab Plc reserves the right to change test conditions, parameter , -05 LM120-05 LM7905A LM7905 LM7905A LM120A­05 Min. Typ. Max. VIN = -10V VIN = -7.5V to -20V TJ = -55 to 150°C VIN = -7V to -25V VIN = -7.5V to -20V TJ = -55 to 150°C VIN = -8V to -12V IO £ IMAX TJ = -55 to 150°C , VIN = -8V to -18V IO = IMAX IO £ IMAX IO £ 0.5 IMAX TJ = -55 to 150°C Dropout Voltage RO Isc Ipk , IMAX -7.3 2.4 3.3 2.4 3.3 mV °C V VIN = -35V 0.6 1.2 0.6 1.2 A 58 58 1.4 5 TJ = -55 to 150°C TJ = -55
Semelab
Original
LM7905K LM7905SMD TO257-F LM7905 to3 LM7905I LM7905-39-8QR-B LM120A-05 905IGF LM7905IGF-8QR-B LM7905K-8QR-B LM7905R

Diode 400V 5A

Abstract: lm1083 % 0.50% -2.2V -3V Negative -3A 25V Regulator +150°C -14.5V Voltage -55 to -12V 0.20% 0.50% -2.2V -3V Negative -3A to -30V Regulator +150°C -14.5V Voltage -55 to -12V 0.20% 0.50% -2.2V -3V Negative -3A to -30V Regulator +150°C -17.5V Voltage -55 to -15V 0.20% 0.50% -2.2V -3V Negative -3A to -30V Regulator +150°C IP1R18AG15-8QR-B IP1R18AK-05 IP1R18AK05-883B IP1R18AK05 , ) Regulator TO3 Voltage (TO204AA) Regulator TO3 Voltage (TO204AA) Regulator TO257AA -55 to +150°C
-
Original
2C444 Diode 400V 5A lm1083 transistor 2n1208 bc109 spice BZY55C IRF9024 2C415 2C425 2C746 2N1131L 2N1132

semikron skiip 24 nab 125 t 12

Abstract: semikron skiip 31 nab 125 t 12 SKiiP 11NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 12 12 12 12 8 24 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 12 12 12 12 8 24 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C , Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Typical , for Tj150 (recomm. Top = -40 . +150°C) Inverse - Diode Tj = 25 °C Tj = 150 °C Tj = 175 °C IFRM =
SEMIKRON
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semikron skiip 31 nab 125 t 12 Semikron skiip 31 nab 12 T 10 semikron skiip 83 AC 12 it skiip 31 nab 125 t 12

IP7815AK-883B

Abstract: IP7805ASMD05 Temperature (for VO = 5, 12, 15V) 35V Internally limited 1 ­55 to 150°C ­65 to 150°C Note 1. Although power , to IMAX VIN = 7V to 20V VIN = 7V to 25V IO = 0.5 IMAX VIN = 7.5V to 25V TJ = -55 to 150°C IO £ IMAX VIN = 8V to 12V TJ = -55 to 150°C VIN = 10V IO = 5mA to 1.5A IO = 250mA to 750mA IO = 5mA to IMAX TJ = -55 to 150°C TJ = -55 to 150°C VIN = 10V VIN = 7.5V to 20V TJ = -55 to 150°C VIN = 8V to 25V VIN = 7V to 25V TJ = -55 to 150°C VN Output Noise Voltage f = 10Hz to 100kHz VIN = 10V f = 120Hz VIN = 8V to
Semelab
Original
IP7815AK-883B IP7805ASMD05 IP140A IP140 IP7800A IP7800 LM140 IP7815AIG-883B

24NAB12T4V1

Abstract: semikron skiip 24 nab 125 t 12 SKiiP 24NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 43 33 48 39 35 105 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 43 33 48 39 35 105 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = , IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Typical , rel. results valid for Tj 150 (recomm. Top = -40 . +150°C) Tj = 25 °C Tj = 150 °C Tj = 175 °C
SEMIKRON
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semikron skiip 24 nab 125 t 12

Abstract: semikron skiip 81 AN 15 T SKiiP 37NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 81 62 90 73 75 225 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 81 62 90 73 75 225 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = , IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Typical , valid for Tj 150 (recomm. Top = -40 . +150°C) Inverse - Diode Tj = 25 °C Tj = 150 °C Tj = 175 °C
SEMIKRON
Original

semikron skiip 24 nab 125 t 12

Abstract: skiip 24 nab 125 t 12 SKiiP 23NAB12T4V1 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 , Ts = 70 °C Values 1200 33 26 37 30 25 75 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 33 26 37 30 25 75 -20 . 20 Tj = 150 °C 10 -40 . 175 1200 Ts = 25 , IGBT Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 3 x ICnom VCC = 800 V VGE 15 V VCES 1200 V Typical , valid for Tj150 (recomm. Top = -40 . +150°C) Inverse - Diode Tj = 25 °C Tj = 150 °C Tj = 175 °C
SEMIKRON
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skiip 24 nab 125 t 12 semikron miniskiip 09 125

V23990-P589-A41-PM

Abstract: V23990-P589-A 310 A2s 38 W Tjmax 150 °C VCE 1200 V Input Rectifier Diode Repetitive , Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=150°C 0.8 1.31 1.32 0.93 0.83 0.008 0.01 1.6 , Integrated Gate resistor 0.00085 Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C , chip to case per chip RthJC Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Tj=25°C Tj=150°C Cies Coss 5.8 6.5 1.87 2.32 2.2 0.25 200
Vincotech
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V23990-P589-A41-PM V23990-P589-A vinco vincotech flowPIM flowpim V23990-P589-A41
Abstract: Kurzschlussstrom · NiedrigeSchaltverluste · NiedrigesVCEsat · Tvjop=150°C · , Tvjop=150°C · VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures · AlSiC Base Plate for , Tvj = 150°C TC = 95°C, Tvj = 150°C tP = 1 ms TC = 25°C, Tvj = 150°C VCES 3200 3300 3300 1000 2000 9,60 +/-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Infineon Technologies
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FD1000R33HE3-K

IRFP460Z

Abstract: IRF3205 application : T = 150°C or 175°C Duration: 1000 hours (typical) Bias: VS = VG = 0V VD = Maximum rated , ENVIRONMENTAL STRESS TEST GATE STRESS CONDITIONS: CIRCUIT DIAGRAM Temperature: T 175°C Duration: (typical) Bias: = 1000 150°C or hours VS = VD = 0V VG = +20 V (N-channel) VG = -20 V , Tmax = +150°C ? T = 205°C Duration: 1000 cycles (typical) Bias: No bias applied during , CYCLING CONDITIONS: DIAGRAM Temperature Tmin = 30°C Tmax = 30°C + ? T ? T = 70°C or 100°C Duration
International Rectifier
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IRFP460Z IRF3205 application IRF3205 equivalent irfp4004 power MOSFET IRFP460z IRF3808 equivalent HFA16TB120 C/15PSIG 20ETS12S 15ETS16 20ETS16 10TTS08

skm150gar12t4

Abstract: switched reluctance motor IGBT 1200 232 A Tc = 80 °C 179 A 150 Tj = 175 °C V Tc = 25 °C A ICnom ICRM , °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A VGES tpsc VCC = 800 V VGE 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GAR12T4 Tj = 175 °C IFnom , -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A · IGBT4 = 4 , · Case temperature limited to Tc = 125°C max, recomm. Top = -40 . +150°C, product rel. results
SEMIKRON
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switched reluctance motor IGBT dc motor td 42

switched reluctance motor IGBT

Abstract: TR 505 diode 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM400GAR12T4 Tj = 175 °C IFnom , · Case temperature limited to Tc = 125°C max, recomm. Top = -40 . +150°C, product rel. results valid for Tj = 150° A -40 . 125 °C 4000 Tstg V Characteristics Symbol AC , Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 , IGBT VCE(sat) IC = 400 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE
SEMIKRON
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TR 505 diode switched reluctance motor semikron ms 8/4 4 switched reluctance motor

SKM150GAL12T4

Abstract: Ic C 141 1200 232 A Tc = 80 °C 179 A 150 Tj = 175 °C V Tc = 25 °C A ICnom ICRM , °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A VGES tpsc VCC = 800 V VGE 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GAL12T4 Tj = 175 °C IFnom , -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A · IGBT4 = 4 , · Case temperature limited to Tc = 125°C max, recomm. Top = -40 . +150°C, product rel. results
SEMIKRON
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Ic C 141 SKM150GAL12T SKM150GAL IGBT4 IGBT for switched reluctance motor
Abstract: Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage Tvj = -40°C Tvj = 25°C Tvj = 150°C TC = 100°C, Tvj = 175°C tP = 1 ms TC = 25°C, Tvj = 175°C VCES 1570 1700 1700 1600 3200 10,5 +/-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,2 typ. 1,90 2,30 2,40 5,8 17,0 0,97 130 Infineon Technologies
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FD1600/1200R17HP4 E83335
Abstract: = 20 Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG , 1700 A/µs (Tvj=150°C) Tvj = 125°C RGon = 20 Tvj = 150°C IC = 25 A, VCE = 600 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3600 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 20 Tvj = 150°C VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt IGBT/perIGBT IGBT/perIGBT Paste=1W/(m·K)/grease=1W/(m·K) tP 10 µs, Tvj = 150°C Infineon Technologies
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FP25R12U1T4
Abstract: ±15 V RGoff = 3,6 Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat , 3000 A/µs (Tvj=150°C) Tvj = 125°C RGon = 3,6 Tvj = 150°C IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 1950 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 3,6 Tvj = 150°C VGE 15 V, VCC = 360 V , °C tP 10 µs, Tvj = 150°C Eon Eoff ISC RthJC RthCH 0,13 K/W 0,027 K/W Infineon Technologies
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F3L400R07ME4

H9723

Abstract: h9740 : Refer to JEDEC-STD-22, Method A104 Temperature Range -65 to +150°C (air-to-air) typical -55 to , 41 5 2 7 35 8 7,014,363 3,469,286 0 1 130 FIT 580 FIT +135/150°C, Vcc = 5.5V, Ea , +135/150°C, Vcc = 5.5V, Ea = 0.5 eV, ß=1.6, C.L. = 60% 4 4 4 1,834 4,032 853 482,319,777 1,088,671,303 154,194,654 0 6 2 2 FIT 7 FIT 51 FIT +135/150°C, Vcc = 3.6V, Ea = 0.5 eV, ß , 0.5 eV, ß=1.6, C.L. = 60% RISC, 3.3V CEMOS 8 CEMOS 9 142,665,987 63,931,073 +150°C, Vcc =
Integrated Device Technology
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H9723 h9740 l9718 L9712 L9709 L9727 61245L 63601N 7282Q 11256WW 7008Z 77105Z
Abstract: , VCE = 300 V VGE = ±15 V RGoff = 1,8 Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES td on 4,9 typ. 1,55 1,70 1,75 5,8 4,30 1,0 , ±15 V, di/dt = 2800 A/µs (Tvj=150°C) Tvj = 125°C RGon = 1,8 Tvj = 150°C IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 2350 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 1,8 Tvj = 150°C VGE Infineon Technologies
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F3L400R07PE4 PACKTM42

70241k

Abstract: 61c64 , VCE = 300 V VGE = ±15 V RGoff = 3,3 Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES td on 5,0 typ. 1,55 1,70 1,75 5,8 1,00 2,0 , ±15 V, di/dt = 5100 A/µs (Tvj=150°C) Tvj = 125°C RGon = 3,3 Tvj = 150°C IC = 100 A, VCE = 300 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4000 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 3,3 Tvj = 150°C VGE
Integrated Silicon Solution
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70241k 61c64 61c256 d5611 ic 9022 RELIABILITY REPORT ISSI R-115 R-118

IGBT4A

Abstract: 25°C, Tvj = 175°C VCES 650 50 75 100 230 +/-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,0 typ. 1,55 1,70 , ) Tvj = 125°C RGon = 8,2 Tvj = 150°C IC = 50 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3300 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 8,2 Tvj = 150°C VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE
Infineon Technologies
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IGBT4A FP100R07N3E4
Abstract: RGoff = 8,2 IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 8,2 Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES td on 5,0 typ. 1,55 1,70 1 , °C RGon = 8,2 Tvj = 150°C IC = 50 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3300 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 8,2 Tvj = 150°C VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt IGBT Infineon Technologies
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FP50R07U1E4
Abstract: Temperature (for VO = 5, 12, 15V) 35V Internally limited 1 ­55 to 150°C ­65 to 150°C Note 1. Although power , to IMAX VIN = 7V to 20V VIN = 7V to 25V IO = 0.5 IMAX VIN = 7.5V to 25V TJ = -55 to 150°C IO £ IMAX VIN = 8V to 12V TJ = -55 to 150°C VIN = 10V IO = 5mA to 1.5A IO = 250mA to 750mA IO = 5mA to IMAX TJ = -55 to 150°C TJ = -55 to 150°C VIN = 10V VIN = 7.5V to 20V TJ = -55 to 150°C VIN = 8V to 25V VIN = 7V to 25V TJ = -55 to 150°C VN Output Noise Voltage f = 10Hz to 100kHz VIN = 10V f = 120Hz VIN = 8V to Infineon Technologies
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RN4Z

Abstract: 25 39 50 190 +/-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,2 typ. 1,85 2,15 2,25 5,8 0,20 0,0 1,45 0,05 0,026 , = 20 Tvj = 150°C IC = 25 A, VCE = 600 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3600 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 20 Tvj = 150°C VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt proIGBT/perIGBT
Sanken Electric
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RN4Z VR-60SS

FP25R12U1T4

Abstract: . Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,2 typ. 1,85 2,15 2,25 5,8 0,12 0,0 0,89 , ) Tvj = 125°C RGoff = 39 Tvj = 150°C VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt proIGBT/perIGBT tP 10 µs, Tvj = 150°C Eoff ISC RthJC RthCH 1,05 K/W K/W Wärmewiderstand
Infineon Technologies
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FP15R12W2T4

Abstract: : Temperature Range -65 to +150°C (liquid-to-liquid) Temperature Cycle (TMCL) Purpose: See Thermal , . Typical Test Conditions: Refer to JEDEC-STD-22, Method A104 Temperature Range -65 to +150°C , : FIFO Device Hrs @ +55°C Observed Failures Failure Rate @ +55°C +125/135,150°C, Vcc = , BiCEMOS 3 3 4 284 49,260,060 1 41 FIT Product Line: Logic +150°C, Vcc = 5.5V, Ea = , 8 1 4 115 8,949,300 0 102 FIT Product Line: SMP +150°C, Vcc = 5.5V, Ea = 0.5
Infineon Technologies
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FP15R12W2T4

power supply ic 9435

Abstract: 9435 72 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td , A/µs (Tvj=150°C) Tvj = 125°C RGon = 1,0 Tvj = 150°C IC = 300 A, VCE = 600 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3500 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 1,0 Tvj = 150°C VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt proIGBT/perIGBT tP 10 µs, Tvj = 25°C tP 10 µs, Tvj = 150°C Eon
Integrated Device Technology
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power supply ic 9435 9435 72 datasheet and application 7217 malaysia IC report on PLCC v9452 VII-18 11256G PDIP-28 11256L SOJ-28 11V256C

F3L300R12MT4

Abstract: 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td , ) Tvj = 125°C RGon = 3,6 Tvj = 150°C IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 1950 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 3,6 Tvj = 150°C VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt proIGBT/perIGBT tP 10 µs, Tvj = 25°C tP 10 µs, Tvj = 150°C Eon Eoff ISC
Infineon Technologies
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F3L300R12MT4
Abstract: /-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,2 typ. 2,00 2,35 2,45 5,8 10,0 1,5 81,0 2,60 0,55 0,60 0,60 0 , Tvj = 150°C IC = 1000 A, VCE = 900 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 3000 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 1,8 Tvj = 150°C VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt proIGBT Infineon Technologies
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Abstract: /-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,2 typ. 2,00 2,35 2,45 5,8 7,00 2,3 54,0 1,70 0,55 0,60 0,60 0 , Tvj = 150°C IC = 650 A, VCE = 900 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 3200 V/µs (Tvj=150°C) Tvj = 125°C RGoff = 2,7 Tvj = 150°C VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt proIGBT Infineon Technologies
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FF1000R17IE4
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