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SN54ACT7881HV Texas Instruments 1KX18 OTHER FIFO, 13ns, CQFP68, CERAMIC, QFP-68 visit Texas Instruments
SN74ACT3632-20PCBR Texas Instruments 512X36 BI-DIRECTIONAL FIFO, 13ns, PQFP120, TQFP-120 visit Texas Instruments
SN74ACT3651-20PCBR Texas Instruments 2KX36 OTHER FIFO, 13ns, PQFP120, GREEN, PLASTIC, HLQFP-120 visit Texas Instruments
SN74ACT7807-20PMR Texas Instruments 2KX9 OTHER FIFO, 13ns, PQFP64, PLASTIC, LQFP-64 visit Texas Instruments
SN74ACT7881-20FNR Texas Instruments 1KX18 OTHER FIFO, 13ns, PQCC68, GREEN, PLASTIC, LCC-68 visit Texas Instruments
1M7881-20PNG4 Texas Instruments 1KX18 OTHER FIFO, 13ns, PQFP80, GREEN, PLASTIC, LQFP-80 visit Texas Instruments

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13ns Datasheet

Part Manufacturer Description PDF Type
13NS360056 N/A NS Series 240 - 960 Watt Power Supply Unit Scan

13ns

Catalog Datasheet MFG & Type PDF Document Tags

CML50

Abstract: eel -16-2005 Gate Power Voltage Pads ; ECI CMA . 112 x 124 112 140 13ns
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OCR Scan
S020G ECIS020J ECIS020L ECIS020M ECICM500 CM600 CML50 eel -16-2005 S020C S020F- S020H

mosfet driver 5v to 30v

Abstract: MLF8 Non-Inverting 6A 1.5 12ns/13ns into 2500pF 45ns/50ns into 2,500pF 4.5V to 20V EPAD-SOIC-8, MLF , 13ns/15ns into 1000pF 37ns/40ns into 1000pF 4.5V to 20V EPAD-SOIC-8, EPAD-MSOP-8, MLF-8 (3x3mm , ) Low-Side Driver Dual Non-Inverting 1.5A 6 13ns/15ns into 1000pF 37ns/40ns into 1000pF 4.5V to , 1.5A 6 13ns/15ns into 1000pF 37ns/40ns into 1000pF 4.5V to 20V EPAD-SOIC-8, EPAD-MSOP-8, MLF , . MIC4129(2) Low-Side Driver Single Inverting 6A 1.5 12ns/13ns into 2500pF 45ns/50ns into 2
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MIC4100 MIC4101 MIC4102 MIC4103 MIC4104 MIC4120 mosfet driver 5v to 30v MLF8 logic level complementary MOSFET mic4427 MIC4428 SOIC-8 mosfet
Abstract: utilizes exemption 7a. Single-ended (1 delay element) Time delays of 0.1ns to 1.3ns Tolerances as , "H" dimension 0.1ns ~ 1.3nS 0.250 max. (DJ) Schematic: Marking: Product marking will , ~ 0.8ns 0.9ns ~ 1.3ns Product Height (inches) 0.250" 0.250" Time delay increments 0.05ns , ±10% 1.0 max. (0.1ns to 1.0ns) 1.0 /ns max. (1.1ns to 1.3ns) DC Resistance Typical Rise Time , 75ps 0.5ns = 80ps 0.6ns = 80ps 1.3ns = 140ps 0.1ns = 3.5 GHz 0.5ns = 3.5 GHz 0.6ns = 3.5 GHz Thin Film Technology
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DS1L5DJ080K-C DS1L5DJ020K DS1L5DJ110K DS1L5DJ130K-C

5962-8850307PA

Abstract: © NAND Inputs 14ns/13ns into 470pF 30ns/45ns 4.5V to 18V WSOIC-16, into 470pF PDIP , Non-inverting 1.2A 5Ω AND Inputs 14ns/13ns into 470pF 30ns/45ns 4.5V to 18V WSOIC , Low-Side Driver Quad Inverting + 1.2A 5Ω 14ns/13ns 30ns/45ns 4.5V to 18V WSOIC , Inverting 1.5A 6Ω 13ns/15ns 37ns/40ns 4.5V to 20V eSOIC-8, MIC4426 upgrade; Higher input , ®-8 (3â'‰xâ'‰3mm) MIC4127 Low-Side Driver Dual Non-Inverting 1.5A 6Ω 13ns/15ns 37ns/40ns
Micrel Semiconductor
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5962-8850307PA MIC4416 MIC4417 MIC5020 MIC5011 MIC5013 MIC5014

M5M465805ATP

Abstract: 4mx16 edo 50ns 13ns 25ns 13ns 28ns 8ns Ons 8ns Ons 30ns 64ms 64ms Test Condition Vcc=3.6V.Tc=84ns.Ta=25°C Vcc , 25.1 21.8 Spec. (50ns) 100mA 500uA lOOOuA 90mA 130mA 50ns 13ns 25ns 13ns 30ns 8ns Ons 13ns Ons 30ns , lOOOuA 120mA 140mA 50ns 13ns 25ns 13ns 28ns 8ns Ons 8ns Ons 30ns 64ms 64ms Test Condition Vcc
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OCR Scan
M5M465400ATP M5M465805ATP 4mx16 edo L-21011-01 64MDRAM M5M467400AJ M5M467400ATP M5M467800AJ M5M467800ATP
Abstract: Stop Pull-Up Mxxxxxx fOUT < 1 MHz B 3.3V Lower Power2 1.3ns B ± 30 B Enable Doze Pull-Up xMxxxxx 1 MHz ≤ fOUT < 10 MHz C 2.5V Lower Power2 1.3ns , Lower Power2 1.3ns Lower Power3 Lower Power3 Lower Power3 Lower Jitter1 Lower Jitter2 Lower Jitter2 Lower Jitter2 Lower Jitter3 Lower Jitter3 Lower Jitter3 3ns 5ns 8ns 0.7ns 1.3ns 1.3ns 1.3ns 3ns 5ns 8ns Enable Enable Enable Pull-Down Pull-Down Pull-Down fOUT = 100 MHz Silicon Laboratories
Original
Abstract: Lower Power2 1.3ns B ± 30 B Enable Doze Pull-Up xMxxxxx 1 MHz ≤ fOUT < 10 MHz C 2.5V Lower Power2 1.3ns C ± 20 C Enable Sleep Pull-Up xxMxxxx 10 MHz ≤ fOUT < 100 MHz D 1.8V Lower Power2 1.3ns Lower Power3 Lower Power3 Lower , Jitter3 3ns 5ns 8ns 0.7ns 1.3ns 1.3ns 1.3ns 3ns 5ns 8ns Enable Enable Enable Pull-Down , . Description Dimension 1 0.7ns A ± 50 A Stop Pull-Up B Lower Power2 1.3ns Silicon Laboratories
Original
Abstract: . Electrical Time delay values: 0.1 to 0.8ns: 0.05ns steps 0.9 to 1.3ns: 0.10ns steps Above 1.3ns: in development - call factory Time delay tolerance 0.1 to 0.8ns: ±25ps 0.9 to 1.3ns: ±50ps DC Resistance , time: (20-80% max) 0.1ns: 75ps 0.5ns: 80ps 0.6ns: 80ps 1.3ns: 140ps Other values: in , 1.3ns: 2.4 GHz Other values: in development - call factory Rated current: 100mA Temp. coef. of Td Thin Film Technology
Original
Abstract: ) Time delays of 0.1ns to 1.3ns Tolerances as tight as ±0.025ns 50 impedance High volume production , . (0.1ns to 1.0ns) 1.0 /ns max. (1.1ns to 1.3ns) DC Resistance Typical Rise Time (20-80% max.) Typical Insertion Loss (-3dB) ±10% 0.1ns = 75ps 0.5ns = 80ps 0.6ns = 80ps 1.3ns = 140ps 0.1ns = 3.5 GHz 0.5ns = 3.5 GHz 0.6ns = 3.5 GHz 1.3ns = 2.4 GHz Rated Current 100 mA Temp Thin Film Technology
Original
Abstract: fOUT < 1 MHz B 3.3V Lower Power2 1.3ns B ± 30 B Enable Doze Pull-Up xMxxxxx 1 MHz ≤ fOUT < 10 MHz C 2.5V Lower Power2 1.3ns C ± 20 C Enable Sleep Pull-Up xxMxxxx 10 MHz ≤ fOUT < 100 MHz D 1.8V Lower Power2 1.3ns Lower , Jitter3 Lower Jitter3 Lower Jitter3 3ns 5ns 8ns 0.7ns 1.3ns 1.3ns 1.3ns 3ns 5ns 8ns , B 3.3V C 2.5V D 1.8V E ALL Lower Power1 0.7ns A ± 50 Lower Power2 1.3ns B Silicon Laboratories
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FDC1205

Abstract: FDC1505 ±50ps 1.3ns ±50ps ±100ppm/°C 1.4ns ±50ps 50 ±10% 1.5ns ±50ps 1.6ns ±50ps 1.7ns ±50ps 1.8ns ±50ps , FDD9005 9.0ns ±0.5ns 1.3ns 300MHz E,S,T FDD9505 9.5ns ±0.5ns 1.3ns 250MHz E,S,T FDD10005 10.0ns , 300MHz E,S,T FDD9010 9.0ns ±0.5ns 1.3ns 300MHz E,S,T FDD9510 9.5ns ±0.5ns 1.3ns 250MHz E,S,T , 83MHz E,S,T FDD25010 25.0ns ±1.3ns 3.7ns 80MHz E,S,T FDD27010 27.0ns ±1.4ns 4.0ns 74MHz E,S,T
ELMEC Technology
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FDC00505 FDC0105 FDC01505 FDC02505 FDC0605 FDC1205 FDC1505 FDD8010 FDD7010 FDC4010 100KH DC50V FDC0205

ISL43L711

Abstract: ISL43L711IU fast switching speeds (tON = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC , 3.0V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · ESD HBM Rating . . . . . . . , 30ns/25ns 30ns/25ns 3V RON 0.16 3V tON/tOFF 13ns/13ns Truth Table ISL43L710 , 13ns/13ns 13ns/13ns ISL43L712 INH LOGIC SW 1 SW 2 1 X OFF OFF Related
Intersil
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ISL43L711 ISL43L711IU TB363 AN557 ISL43L710IUZ ISL43L71X FN6092 ISO9000

AN557

Abstract: ISL43L710 fast switching speeds (tON = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC , NC/NC 0.26 0.26 30ns/25ns 30ns/25ns 3V RON 0.16 3V tON/tOFF 13ns/13ns · , . . . . . . . . . . . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · ESD HBM Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >8kV , 13ns/13ns 13ns/13ns ISL43L712 INH Technical Brief TB363 "Guidelines for Handling and
Intersil
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ISL43L710IU

220e

Abstract: AN557 speeds (tON = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC functionality limitations , 30ns/25ns 30ns/25ns 3V RON 0.16 3V tON/tOFF 13ns/13ns · Pb-Free Available as an , 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · ESD HBM , , 2 30ns/25ns 0 OFF ON 0.16 0.16 1 ON OFF 13ns/13ns 13ns/13ns , on-resistance (0.16) and high speed operation (tON = 13ns, tOFF = 13ns). The device is especially well suited
Intersil
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220e

AN557

Abstract: ISL43L710 fast switching speeds (tON = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC , 3.0V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · ESD HBM Rating . . . . . . . , 30ns/25ns 30ns/25ns 3V RON 0.16 3V tON/tOFF 13ns/13ns Truth Table ISL43L710 , 13ns/13ns 13ns/13ns ISL43L712 INH LOGIC SW 1 SW 2 1 X OFF OFF Related
Intersil
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SW SPDT

AN557

Abstract: ISL43L120 = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC functionality limitations. The , 30ns/25ns 0.16 0.16 13ns/13ns 13ns/13ns · Single Supply Operation. . . . . . . . . . . . , . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · , 2 SW 1/SW 2 FN6091 13ns/13ns PACKAGES 8Ld 3x3 thin DFN, 8Ld MSOP Related , supply with low on-resistance (0.16) and high speed operation (tON = 13ns, tOFF = 13ns). The device is
Intersil
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ISL43L120 ISL43L121 ISL43L122 ISL43L120IU L120 ISL43L12X
Abstract: (tON = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC functionality limitations. The , "¦ 0.26â"¦ 30ns/25ns 30ns/25ns 0.16â"¦ 0.16â"¦ 13ns/13ns 13ns/13ns â'¢ R Flatness Over , . . . . . . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns â'¢ ESD HBM Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >8kV â , Features NO/NC 1.8V RON FN6091.2 13ns/13ns PACKAGES 8Ld 3x3 TDFN, 8Ld MSOP Related Intersil
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AN557

Abstract: ISL43L120 = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC functionality limitations. The , 30ns/25ns 0.16 0.16 13ns/13ns 13ns/13ns · Single Supply Operation. . . . . . . . . . . . , . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · , 2 SW 1/SW 2 FN6091.1 13ns/13ns PACKAGES 8Ld 3x3 thin DFN, 8Ld MSOP Related , operation (tON = 13ns, tOFF = 13ns). The device is especially well suited for portable battery powered
Intersil
Original

L121Z

Abstract: AN557 = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC functionality limitations. The , 30ns/25ns 30ns/25ns 0.16 0.16 13ns/13ns 13ns/13ns · RON Flatness Over Signal Range . , (V+ = 3.0V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns · ESD HBM Rating . . . , 0.26 1.8V tON/tOFF Features NO/NC 1.8V RON FN6091.2 13ns/13ns PACKAGES 8Ld 3x3
Intersil
Original
L121Z ISL43L120IR
Abstract: ¼W) and fast switching speeds (tON = 13ns, tOFF = 13ns). Cell phones, for example, often face ASIC , . . . . . 13ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns â , © 0.26Ω 0.26Ω 1.8V tON/tOFF 30ns/25ns 30ns/25ns 3V RON 0.16Ω 3V tON/tOFF 13ns/13ns Truth Table ISL43L710 ISL43L711 LOGIC SW 1, 2 SW 1, 2 30ns/25ns 0 OFF ON 0.16Ω 0.16Ω 1 ON OFF 13ns/13ns 13ns/13ns ISL43L712 INH LOGIC SW 1 Intersil
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LSB31

Abstract: n16n Non-Inverting 6A 1.5 12ns/13ns into 2500pF 45ns/50ns into 2,500pF 4.5V to 20V EPAD-SOIC-8, MLF , 13ns/15ns into 1000pF 37ns/40ns into 1000pF 4.5V to 20V EPAD-SOIC-8, EPAD-MSOP-8, MLF-8 (3x3mm , ) Low-Side Driver Dual Non-Inverting 1.5A 6 13ns/15ns into 1000pF 37ns/40ns into 1000pF 4.5V to , 1.5A 6 13ns/15ns into 1000pF 37ns/40ns into 1000pF 4.5V to 20V EPAD-SOIC-8, EPAD-MSOP-8, MLF , . MIC4129(2) Low-Side Driver Single Inverting 6A 1.5 12ns/13ns into 2500pF 45ns/50ns into 2
NEC
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LSB31 n16n uPD705100 uPD705100GJ V800 V830 PD705100 V830TM PD705100V830NECV800TMV830TM U10064J V830U12496J PD705100GJ-100-8EU

U10064J

Abstract: uPD705100 © NAND Inputs 14ns/13ns into 470pF 30ns/45ns 4.5V to 18V WSOIC-16, into 470pF PDIP , Non-inverting 1.2A 5Ω AND Inputs 14ns/13ns into 470pF 30ns/45ns 4.5V to 18V WSOIC , Low-Side Driver Quad Inverting + 1.2A 5Ω 14ns/13ns 30ns/45ns 4.5V to 18V WSOIC , Inverting 1.5A 6Ω 13ns/15ns 37ns/40ns 4.5V to 20V eSOIC-8, MIC4426 upgrade; Higher input , ®-8 (3â'‰xâ'‰3mm) MIC4127 Low-Side Driver Dual Non-Inverting 1.5A 6Ω 13ns/15ns 37ns/40ns
NEC
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144LQFP20 U11483JJ3V0DS00 A31/CS3 A30/CS2 A29/CS1 A28/CS0
Abstract: Gate Power Voltage Pads ; ECI CMA . 112 x 124 112 140 13ns -
OCR Scan
A28-A31
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