500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
130098 TE Connectivity Ltd TERM PLASTI-GRIP visit Digikey
130094 TE Connectivity (130094) PIDG RING visit TE Connectivity
130090 TE Connectivity (130090) PIDG RING TONGUE visit TE Connectivity
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

13009 silicon

Catalog Datasheet MFG & Type PDF Document Tags

D 13009 K

Abstract: e 13009 f ^ OOO'îbMT 0 TE 13008 TE 13009 Silicon NPN Power Transistors Applications: Switching mode power supply , thermal resistance Junction case TE 13008 TE 13009 Collector-emitter voltage ^ceo 300 400 V ^ces 600 , K/W T1.2/1999.0888 E 2786 Câ'"09 265 TELEFUNKEN ELECTRONIC TE 13008 â'¢ TE 13009 17E D , cut-off current 850 V TE 13008 VCE= 1000 V TE 13009 VCE = 1000 V TE 13009 Collector-emitter breakdown voltage /c = 0.5A,ix=125mH TE 13008 TE 13009 Emitter-base breakdown voltage /E«1 mA Collector-emitter
-
OCR Scan

13009 silicon

Abstract: 13009 TRANSISTOR rZ Z S G S -T H O M S O N * 7# » © i» !© TM « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. TO-220 INTERNAL SCHEMATIC DIAGRAM CO (2) 5C C 69& :- F . Ó (3 ) ABSOLUTE MAXIMUM RATINGS Symbol VcEO VcEV Vebo lc ICM Ib I bm Ie Iem Plot Tstg
-
OCR Scan
13009 silicon 13009 TRANSISTOR transistor 13009 EB 13009 MJE-13009 transistor MJE13009

E 13009 2

Abstract: e 13009 l   bbS3131 O O n i S T S â  MJE 13008 MJE 13009 Silicon diffused power transistors J T , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass , , motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 , AflER PHILIPS/D IS CRETE MJE 13008 MJE 13009 V SSE D bbS3T31 001^133 3 â  T-33-13 RATINGS
-
OCR Scan
E 13009 2 e 13009 l EB 13009 D transistor E 13009 p 13009 D 13009 K S3T31

transistor E 13009

Abstract: transistor d 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C , KSE13008/13009 POWER DERATING NPN SILICON TRANSISTOR 0 25 50 75 100 125 150 175 , Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC
-
OCR Scan
transistor d 13009 e 13009 f e13009 transistor E 13009 l 13009 E 13009 KSE13008/13009 KSE13009

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D f-33-13 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , '¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800
-
OCR Scan
J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR J 13009 transistor j 13009 53T31

transistor E 13009

Abstract: all transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 Emitter Base , KSE13008/13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , /13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or
-
OCR Scan
all transistor 13009 transistor EN 13009 D 13009 13009 2 transistor EN 13009 npn 13009

*E13009F

Abstract: all transistor 13009 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter , . A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Package Demensions TO
Fairchild Semiconductor
Original
KSE13009FTU 13009 NPN Transistor cross reference 13009 13009 applications kse13009 h2 PW300 KSE13009F

e13009

Abstract: transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic , « , % ^^^^^^^^^^^^^ Rev. B FAIRCHILD SEMICONDUCTOR â"¢ ©1999 Fairchild Semiconductor Corporation KSE13008/13009 NPN SILICON TRANSISTOR OC CURRENT GAIN BASE EMITTER SATURATION VOLTAGE COLLECTOR EMITTER SATURATION
-
OCR Scan
transistor switch 13009 13009 H power switching transistor 13009 13009* transistor 13009 power transistor NPN Transistor 13009

transistor E 13009

Abstract: D 13009 K ), TURN OFF TIME 594 ELECTRONICS KSE13008/13009 POW ER DERATING NPN SILICON TRANSISTOR , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic , Vcc= 125V, le = 8A s~ C D 4 b > > PI II 593 ELECTRONICS KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAQE CO LLECTO R EMITTER SATURATION
-
OCR Scan
transistor b 595 E 13009 TRANSISTOR transistor f 3009 E13008

all transistor 13009

Abstract: transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 , , Duty cycle2% Rev. B ©1999 Fairchild Semiconductor Corporation µs µs µs KSE13008/13009 NPN SILICON TRANSISTOR KSE13008/13009 NPN SILICON TRANSISTOR TRADEMARKS The following are
Fairchild Semiconductor
Original
13009 TRANSISTOR equivalent 13009+TRANSISTOR transistor 13009 motor control T 13009

e 13009 d

Abstract: transistor E 13009 NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM , 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN SILICON TRANSISTOR POWER DERATING 160 140 d is s ip a t io n 120 100 P d
-
OCR Scan
e 13009 d

13009

Abstract: tr 13009 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , .Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value , KSE13008/13009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 hFE, DC , VOLTAGE Figure 6. Safe Operating Area Rev. A1, January 2001 KSE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Package Demensions TO
Fairchild Semiconductor
Original

13009

Abstract: SWITCHING SYSTEMS INTERNATIONAL KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon , 2000 KSE13008/13009 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/13009 Typical Characteristics (continued) ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/13009 Package Dimensions TO-220 9.90
Fairchild Semiconductor
Original
SWITCHING SYSTEMS INTERNATIONAL

e13009

Abstract: Fairchild e13009 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , .Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO , cycle2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/13009 VBE , . Safe Operating Area Rev. A, February 2000 KSE13008/13009 Typical Characteristics (Continued , Semiconductor International Rev. A, February 2000 KSE13008/13009 Package Demensions TO-220 4.50
Fairchild Semiconductor
Original
Fairchild e13009 E13009 F E-13009 fairchild e13009 application E13009 2 fairchild E13009 2

MJE13008

Abstract: 13009 MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter , . A1, February 2001 MJE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13008/13009 Package Demensions TO
Fairchild Semiconductor
Original
MJE13008/13009

transistor 13009

Abstract: kse13009 h2 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter , . A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Package Demensions TO
Fairchild Semiconductor
Original
KSE13009H2 KSE13009H2TU KSE13009TU
Abstract: KSM13008/13009 TO-220 High Voltage Switch Mode Application â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control 1.Base NPN Silicon Transisor 2.Collector 3 , www.kersemi.com KSM13008/13009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 , . Safe Operating Area 2 www.kersemi.com KSM13008/13009 Typical Characteristics (Continued , www.kersemi.com KSM13008/13009 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 KERSEMI
Original
KSM13008/13009 KSM13008 KSM13009 95MAX 54TYP

tr 13009

Abstract: mje13008 MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Applications · High Speed Switching · , Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter , . A2, June 2001 MJE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE13008/13009 Package Demensions TO
Fairchild Semiconductor
Original
MJE13009 fairchild semiconductor

SR 13009

Abstract: E 13009 TE13008 · TE13009 Tem ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features · · · · · HIGH SPEED technology High reverse voltage Power dissipation Pu,| = 100 W , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5
-
OCR Scan
SR 13009 transistor sr 13009 13009 K 13009T BR 13009 D 13008 K

ST-13002

Abstract: mje 340 transistor TO-220 ST-13008 MJE-13008 100 600 300 600 1.0 6.0 8.0 1.5 1.6 8.0 180 4.0 TO-220 ST-13009 MJE-13009 , D SEMICONDUCTOR TECHNOLOGY, INC. - NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS EPOXY
-
OCR Scan
ST-13002 MJE-13002 ST-13009 mje 340 transistor transistor mje 13003 transistor d 13007 ST13003 STH11 GDDD533 ST44TE5 D44TE5 ST-12007 MJE-12007
Showing first 20 results.