500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments

13002 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR TELEFUNKEN ELECTRONIC TIiLllFlliKiKIK] electronic Crtfuv»T e c h n o te c«5 17E D TE 13002 , ^EBO *c ^ C M T E 13002 300 600 9 1,5 3 0.75 0.75 38 150 - 6 5 .+ 1 5 0 T E 13003 400 700 V V V A A A , TELEFUNKEN ELECTRONIC 17E D ODOUEfl 3 AL(S6 T-33-11 Min. Typ. Max. TE 13002 · TE 13003 , = 150°C, Vr 4S0 Lc. = 60 0 V · VCE = 70 0 V TE 13002 TE 13003 TE 13002 TE 13003 'CES 'cES , Collector-emitter breakdown voltage /c = 100 mA, i.c = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown
-
OCR Scan
E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75 15A3DIN

transistor 13002

Abstract: 13003 TRANSISTOR SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron , -92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings (Ta = 25oC) Symbol Value 13002 , at VCE=10V, IC=100mA Collector Base Breakdown Voltage at IC=1mA 13002 at IC=5mA 13003 , Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB=9V Collector , =0.5A, IB=100mA 13002 VCE(sat) - - 0.8 V at IC=0.2A, IB=40mA 13003 VCE(sat) -
Semtech Electronics
Original
13003 TRANSISTOR 13003 13002 transistor 13003 13002 and 13003 power transistor BR 13003

13002

Abstract: 13003 SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron , -92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings (Ta = 25oC) Symbol Value 13002 , =1mA 13002 at IC=5mA 13003 Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=600V 13002 at VCB=700V 13003 Emitter , ) - - 0.4 V at IC=0.5A, IB=100mA 13002 VCE(sat) - - 0.8 V at IC
Semtech Electronics
Original
transistor 13003 A transistors 13003 NPN Transistor 600V 13003 npn 13003 TRANSISTOR npn g 13003

13002 TRANSISTOR

Abstract: transistor 13002 SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron , -92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings (Ta = 25oC) Symbol Value 13002 , DC Current Gain at VCE=10V, IC=100mA Collector Base Breakdown Voltage at IC=1mA 13002 at IC , =1mA Collector Cutoff Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB , IC=0.5A, IB=100mA 13002 VCE(sat) - - 0.8 V at IC=0.2A, IB=40mA 13003 VCE
Semtech Electronics
Original
13002 power transistor c s 13002 TRANSISTOR w 13002 13003 w

PC 13003 TRANSISTOR

Abstract: PC 13003 MJE13002 (NPN) MJE13003 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13002 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 1.5 Collector current (Pulse) Ic 3.0 Base current (DC) Ib 0.75 Collector Disspation (Tc=25°C) Pc 25 Junction Temperature Tj 150 Rating 13003 , Sustaining Voltage 13002 13003 Collector-Emitter Cutoff 13002 13003 Emitter Cutoff Current DC Current
-
Original
PC 13003 TRANSISTOR PC 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13002 TO 126 transistor 13002 TO 05 13003 application notes

si 13001 transistor

Abstract: transistor x 13002 i f E l / D i m e n t i o n s (Unit : mm) BA13001, B A 13002, BA13001F, B A 13002F IJ, ¥ - h , 7. ( C f t jg T 't 'o The BA13001, BA13001F, BA13002 and BA13002F are large current transistor arrays with 6 Darlington transistor circuits built-in. The necessary surge absor bing diodes and base , ) i ' 7 > 7 ,ÿ ' ï i - K®1OE K it- ;* (T a = 2 5 °C ) Pd B A 13001 1100 X 2 B A 13002 mW S , /BA13001F B A 13002/BA13002F RDNm 307 BA13001/BA13001F/BA13002/BA13002F · I I Si Electrical
-
OCR Scan
si 13001 transistor transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF BA13001/F BA13002/F BA13001/BA13001F BA13002/BA13002F

2SC5586

Abstract: 2SC5487 . 22 2-3 Power Transistor Arrays & MOS FET Arrays . , Transistors 2-1-1 Transistors for Audio Amplifiers Chip Single Transistor General 2SA1725 2SA1726 , . Lot No. a. Part No. b. Lot No. B C E (unit: mm) 23 2-3 Transistor Arrays & MOS FET , MOS MOS Package Fig. No. 1 2 24 2-3 Transistor Arrays & MOS FET Arrays External Dimensions , 4.8±0.2 1.7±0.1 16.0±0.2 a b 9.9±0.2 13.0±0.2 13.0±0.2 16.0±0.2 2.45±0.2 (3.0) 6.7±0.5
-
Original
SLA5058 SLA5046 2SC5586 2SC5487 2SA2003 transistor 2SC5586 sla 1003 2SA1295 2SC3264 AC100V AC200V SIP12P SIP15P SLA5037 SLA5047

transistor sw 13003

Abstract: sw 13003 Te m ic TELEFUNKEN Semiconductors TD13002 · TD13003 Silicon NPN High Voltage Switching Transistor Features · · · · HIG H SPEED technology Glass passivation Very short sw itching tim es Very low , ollector-em itter voltage Test C onditions type TD 13002 TD 13003 T D 13002 TD 13003 E m itter-base voltage C , V; lc = 1 A Vn .; = 10 V; Ic = 100 mA; f - 1 M il/ Type T D 13002 T D 13003 T D 13002 T D 13003 TD 13002 T D 13003 Symbol Ices Icks Ices Ices V(BR)CEO V(BR)CEO V(BR)EBO VCEsal VCEsal VßEsat hEE hEE fT 8
-
OCR Scan
transistor sw 13003 sw 13003 transistor 13003 k Sw 13003 c d 13003 x T 13003 transistor T0252

transistor 13002

Abstract: 13002 TRANSISTOR 2-3 Transistor Arrays & MOS FET Arrays 2-3-4 MOS Array for "S" shape Correction Switch of CRT Display Number of Circuits VDSS (V) 100 150 4 200 250 100 ID (A) 10 10 10 10 10 10 10 5 5 7 5 150 7 5/7 5/7 200 250 6 150 200 7 7 7 7 7/5/7 7 Chip MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS RDS(ON) max(m) 80 85 115 200 175 120 250 185 190 200 105/200 200/440 200/440 , 9.9±0.2 13.0±0.2 13.0±0.2 16.0±0.2 2.45±0.2 (3.0) 6.7±0.5 9.5min Pin1 12 0.85­0.1
Sanken Electric
Original
SLA5077 SLA5041 SLA5081 SLA5094 sla5054 sla5021 SLA15Pin SLA5052 SLA5089 SLA5044 SLA5042

transistor TO-92 13002

Abstract: 13002 TO-92 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic , production availability. MARKING ts fT MIN 700 CSD 13002 A B 18-22 CSD 13002 B MAX , =50mA, f=1MHz A 14-19 TYP 1.2 5.5 1.5 V V 5.0 C 21-25 CSD 13002 C µs MHz E 24-30 CSD 13002 E CSD13002 Rev_2 290307E Continental Device India Limited Data
Continental Device India
Original
transistor TO-92 13002 13002 TO-92 T CSD 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE C-120

SLA5073

Abstract: SMA5118 2-3 Transistor Arrays & MOS FET Arrays sFor 3-Phase Motor Drive Part No. SDC07 SLA5080 STA303A STA304A STA302A SDA05 SLA5079 STA305A SMA6014 SLA5059 SMA6010 SLA6012 SMA5127 SLA5009 SLA5017 , ) max() Package SIP12Pin SIP12Pin Fig. No. 4 30 2-3 Transistor Arrays & MOS FET Arrays , 13.0±0.2 b 1 20.0max 19.56±0.2 8 a b 9.5min 2.7 8.0±0.5 6.3±0.2 0.3­0.05 +0.15 Pin1 , 1.7±0.1 9.9±0.2 13.0±0.2 16.0±0.2 2.45±0.2 (3.0) 6.7±0.5 R-End 0.65­0.1 +0.2 14
Allegro MicroSystems
Original
SLA5060 SLA6023 SLA6022 SMA5118 SLA5074 SLA5073 SMA6511 sla6024 SLA*6023 SMA5104 SLA5022 SLA6024 SLA5061

sla 1003

Abstract: SLA5073 2-3 Transistor Arrays & MOS FET Arrays sFor 3-Phase Motor Drive Part No. SDC07 SLA5080 STA303A STA351A STA513A STA517A STA304A STA302A SDA05 SLA5079 STA352A STA309A STA305A SMA6014 SMA6080 , SIP12Pin SIP12Pin Fig. No. 4 30 2-3 Transistor Arrays & MOS FET Arrays External Dimensions · No , 31.0±0.2 24.4±0.2 Ellipse 3.2±0.15×3.8 4.8±0.2 1.7±0.1 6.8max 16.0±0.2 13.0±0.2 b 1 , 4.8±0.2 1.7±0.1 10.2±0.2 b 2.4 a 9.9±0.2 13.0±0.2 16.0±0.2 (10.4) 2.45±0.2
Sanken Electric
Original
STA517 SLA*5061 sip8pin SLA5064 SLA6026 SMA5125 SLA5010 SLA6020 SLA5023

transistor 13002

Abstract: 13002 TRANSISTOR 2-3 Transistor Arrays & MOS FET Arrays 2-3-4 MOS Array for "S" shape Collection Switch of CRT Display Number of Circuits VDSS (V) 100 150 200 250 100 ID (A) 10 10 4 10 10 10 10 5 5 7 5 150 7 5/7 5/7 200 250 6 150 200 7 7 7 7/5/7 7 Chip MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS MOS RDS(ON) max() 80 85 115 200 175 250 185 190 200 105/200 200/440 200/440 350 500 105/200 , 1.7±0.1 16.0±0.2 a b 9.9±0.2 13.0±0.2 13.0±0.2 16.0±0.2 2.45±0.2 (3.0) 6.7±0.5 9.5min
Allegro MicroSystems
Original
SLA5070 SLA5055 SLA5088 SLA5049 SLA5057

transistor t114

Abstract: transistor 13002 to-92 transistor for high voltage switching. Apply with BiCMOS technology, the device consist of Bandgap , Protection, Over and Under-voltage Protection Emitter Drive of Internal Power Transistor 65kHz , LO LO 750k - T=114 T=24 1N4148 IC2 PC817A 13002 2 1N4148 SW 1 FB , GND 0 1kV 13002 2 2 200 1N4148 10V 1 1 1 T=8 510 0.5W 1N5817
Leshan Radio Company
Original
transistor t114 LR257 1N4007 1N4742A EN55022A 150KH

13002 TRANSISTOR

Abstract: transistor w 13002 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic , 14-19 CSD 13002 A B 18-22 CSD 13002 B µA 0.8 Storage Time *hFE Classification , any of the groups according to production availability. UNIT V µA C 21-25 CSD 13002 C µs MHz E 24-30 CSD 13002 E CSD13002 Rev_2 290307E Continental Device India Limited
Continental Device India
Original
transistor w 13002 13002 and power transistor

transistor C1505

Abstract: STA517 2-3 Transistor Arrays & MOS FET Arrays 2-3-1 For Sink Drive Number of Circuits VCEO(V) VDSS(V) 60 3 100 250 305 50 60 3 4 5 3.5 3 2 3 4 5 2 IC(A) ID(A) hFE (min) 300 1000 1000 0.9 1.8 1000 300 0.45 0.2 2000 0.8 0.8 2000 0.6 1000 2000 0.6 0.6 0.3 0.08 2000 0.085 0.115 0.2 0.12 1000 0.175 , Transistor Arrays & MOS FET Arrays External Dimensions · No. 1 (STA 8 pin) 20.4 max · No. 2 (SD , 13.0±0.2 13.0±0.2 16.0±0.2 2.45±0.2 (3.0) 6.7±0.5 9.5min Pin1 12 0.85 +0.2 ­0.1 +0.2
Sanken Electric
Original
transistor C1505 SIP10P SMD16P STA312A SDC01 STA412A STA504A

sla 1003

Abstract: SLA5041 2-3 Transistor Arrays & MOS FET Arrays 2-3-1 For Sink Drive Number of Circuits 3 VCEO(V) VDSS(V) 60 100 50 60 3 4 2 3 4 5 2 IC(A) ID(A) hFE (min) 300 1000 1000 300 0.45 0.2 2000 0.8 0.8 2000 , Transistor Arrays & MOS FET Arrays External Dimensions · No. 1 (STA 8 pin) 20.4 max · No. 2 (SD , 16.4±0.2 3.2±0.15×3.8 3.2±0.15 4.8±0.2 1.7±0.1 16.0±0.2 a b 9.9±0.2 13.0±0.2 13.0±0.2 16.0±0.2 2.45±0.2 (3.0) 6.7±0.5 9.5min Pin1 12 0.85 +0.2 ­0.1 +0.2 R-End
Allegro MicroSystems
Original
SLA4030 SLA4060 STA501A STA473A STA506A SDK04 SMA4030 STA505A

13002 power transistor

Abstract: transistor 13002 transistor is fabricated using Xemod's advanced design LDMOS process. The gate terminal is connected , CONTACTING XEMOD. Xemod QuikPAC Data QPP-303 www.xemod.com Rev. B (1-30-02) Page 1 of 2 , operating point (quiescent current- IDQ) of the power transistor. VGS may be safely set to any voltage in , voltage of LDMOS transistors. Since the gate bias of an LDMOS transistor changes with device temperature , -303 www.xemod.com Rev. B (1-30-02) Page 2 of 2 Xemod
Xemod
Original
Class A power amplifiers 2110-2170MH H10890

transistor 13002

Abstract: 13002 transistor transistor is fabricated using Xemod's advanced design LDMOS process. The gate terminal is connected , . Xemod QuikPAC Data QPP-008 www.xemod.com Rev. C (1-30-02) Page 1 of 2 Performance at 28VDC , transistor. VGS may be safely set to any voltage in the range listed in the table. This permits a wide range , gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a VGS , dimensions. Xemod QuikPAC Data QPP-008 www.xemod.com Rev. C (1-30-02) Page 2 of 2 Xemod
Xemod
Original
all transistor 13002 925-960MH

sr 13002

Abstract: 13002 sr transistor High Speed Layout Guidelines (LUPA 1300-2) AN54214 Author: Seema Chauhan Associated Project , This application note discusses the high speed LVDS interface and layout guidelines for the LUPA 1300-2 image sensor. In addition to the specific recommendations for LUPA 1300-2 listed here, users must also , system performance. The LUPA 1300-2 is a high speed CMOS image sensor with 1280 by 1024 pixels. The , : LUPA 1300-2 Image Sensor Architecture The sensor consists of a pixel array, analog front end, data
Cypress Semiconductor
Original
sr 13002 13002 sr transistor transistor sr 13002 crc 13002 LUPA-1300-2 stackup
Showing first 20 results.