500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
LM7171AMWG-QML/NOPB Texas Instruments IC OP-AMP, Operational Amplifier visit Texas Instruments
TL074 Texas Instruments IC OP-AMP, Operational Amplifier visit Texas Instruments
OPA2835IDGST Texas Instruments IC OP-AMP, PDSO10, PLASTIC, MSOP-10, Operational Amplifier visit Texas Instruments
OPA4705UA Texas Instruments 12V, Low Cost, CMOS, Rail-to-Rail I/O, Operational Amplifier 14-SOIC -40 to 85 visit Texas Instruments
OPA703UA/2K5 Texas Instruments 12V, CMOS, Rail-to-Rail I/O, Operational Amplifier 8-SOIC -40 to 85 visit Texas Instruments
OPA704UA/2K5 Texas Instruments 12V, CMOS, Rail-to-Rail I/O, Operational Amplifier 8-SOIC -40 to 85 visit Texas Instruments

12v to Amplifier 200w circuit diagrams

Catalog Datasheet MFG & Type PDF Document Tags

12v to Amplifier 200w circuit diagrams

Abstract: 200w power amplifier circuit diagram AU5517T Tamb Amplifier Bias Current Operating Junction Temperature TJ 0 °C to +70 °C -40 , to Buffer VBE Test Circuit (Note 6) 0.02 10 nA 100 0.2 5.0 nA 26 kW , (Refer to Test Circuit) Input Resistance Slew Rate 0.6 V +12 -12 Common-mode Range , of the buffer is connected to the transconductance amplifier output. 6. VS = ±15, ROUT = 5.0 kW , the sum of current I4 and I5 to be equal to amplifier bias current IB: V IN I B The term
ON Semiconductor
Original
NE5517 12v to Amplifier 200w circuit diagrams 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NE5517A AU5517 AU5517/NE5517 SOIC-16 5517DG

NE5517NG

Abstract: AU5517T Tamb Amplifier Bias Current mA °C 0 °C to +70 °C â'40 °C to +125 °C , 5 5 VOBUFFER DVBE of Buffer Refer to Buffer VBE Test Circuit (Note 6) 0.02 10 nA , Voltage 10 100 0.2 IABC = 0 (Refer to Test Circuit) Input Resistance Slew Rate mA mV , amplifier output. 6. VS = ±15, ROUT = 5.0 kW connected from Buffer output to â'VS and 5.0 mA ≤ IABC â , CURRENT (pA/Hz) OUTPUT VOLTAGE RELATIVE TO 1 VOLT RMS (dB) AMPLIFIER BIAS VOLTAGE (mV) 2000
ON Semiconductor
Original
NE5517NG NE5517/D
Abstract: IABC = 0 (Refer to Test Circuit) RIN BW Unity Gain Compensated 5 5 Refer to Buffer VBE Test Circuit , connected to the transconductance amplifier output. 6. VS = ±15, ROUT = 5.0 kW connected from Buffer output , and I5 to be equal to amplifier bias current IB: I4 ) I5 + IB (eq. 2) The remaining transistors , transconductance of the amplifier 2KT and is proportional to IB. I B q 11 V+ D4 Q6 Q10 D6 Q14 7,10 Q12 Q13 , current is the product from transconductance×input voltage. The circuit is effective up to approximately ON Semiconductor
Original
PDIP-16

12v to Amplifier 200w circuit diagrams

Abstract: 12v audio Amplifier 200w schematic diagrams , Input = ±4.0 V IABC = 0 (Refer to Test Circuit) RIN BW SR INBUFFER VOBUFFER Unity Gain Compensated 5 5 Refer to Buffer VBE Test Circuit (Note 6) 10 0.5 5.0 10 350 300 +12 -12 gM Overtemperature Range IBIAS , amplifier output. 6. VS = ±15, ROUT = 5.0 kW connected from Buffer output to -VS and 5.0 mA IABC 500 mA , circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier , to be equal to amplifier bias current IB: I4 ) I5 + IB (eq. 2) The remaining transistors (Q6 to
ON Semiconductor
Original
NE5517AN 12v audio Amplifier 200w schematic diagrams 12v to Amplifier 200w schematic diagrams 200w stereo audio Amplifier diagram stereo amplifier 200W SCHEMATIC 10kw Power Amplifier AU5517D NE5517D NE5517N

12v to Amplifier 200w circuit diagrams

Abstract: 12v to Amplifier 200w schematic diagrams 5.0 nA RIN Open-loop Bandwidth 100 IABC = 0 (Refer to Test Circuit) IIN Leakage , Buffer Output Voltage VOBUFFER 5 kW MHz 50 5.0 10 Refer to Buffer VBE Test Circuit , buffer is connected to the transconductance amplifier output. 6. VS = ±15, ROUT = 5.0 kW connected from , the sum of current I4 and I5 to be equal to amplifier bias current IB: V IN I B The term , the amplifier and is proportional to IB. V+ 11 D6 D4 Q14 Q6 Q10 Q12 Q13 7,10
ON Semiconductor
Original
200w audio amplifier circuit diagram 200w transistor amplifier circuit VCR modulators

12v to Amplifier 200w circuit diagrams

Abstract: 0132C combines proven hybrid construction techniques with advanced circuit design to realize high-speed current , . Bypass supplies as shown in the connection diagrams. Mount bypass capacitors close to the converter , 0 to +5mA ±2.5mA ±1.2V 0 to ­5V 0 to ­10V ±2.5V ±5V ±10V 400 Ohms ±10% 15pF 15nA ±15V , with an external operational amplifier, keep the leads from the converter to the output amplifier as , ; other resistors may be ±10% carbon composition types. 7. Output voltage compliance is ±1.2V to
Datel
Original
0132C SN74S174 8/10/12-B MIL-STD-883 AM-500 DAC-HF12B DS-0132C

AM452

Abstract: DS-0132B +1.2V output. The specified output currents of 0 to +5mA and ±2.5mA are measured into a short circuit , combines proven hybrid construction techniques with advanced circuit design to realize high-speed current , . Bypass supplies as shown in the connection diagrams. Mount bypass capacitors close to the converter , +5mA ±2.5mA ±1.2V 0 to ­5V 0 to ­10V ±2.5V ±5V ±10V 400 Ohms ±10% 15pF 15nA ±15V ±0.5V 40mA , operational amplifier, keep the leads from the converter to the output amplifier as short as possible. 4
Datel
Original
DS-0132B AM452 DAC-HF8/883 DAC-HF10BMC DAC-HF10BMM DAC-HF10/883 DAC-HF12BMC DAC-HF12BMM

GSOT-223

Abstract: P-TO252 (Adjustable Voltage Type) ILOAD=0mA to 800mA, VIN=VOUT+0.8V ILOAD=0mA to 800mA, VIN=VOUT+1.2V IOUT , bandgap reference is connected to the error amplifier, which compares this reference with the feedback , the printed circuit board, copper traces and other materials to the surrounding air. For better , range from +2.5V to +7.0V and delivers 800mA output current. Package Pin Out GSOT-223 1.IN 2 , of the adjustable type is from 1.25V to 5V. Temperature Range CCommercial Standard Output
Fortune Semiconductor
Original
FS8858 HSOT-223 RTO-252 P-TO252 FS8858-xxCx FS8858- JSOT-223 PTO-252

12v to Amplifier 200w circuit diagrams

Abstract: 12v center tap transformer underside. These specifications apply for VDD = VDDP = 12V and TA = 0oC to 85 oC (ISL6551IB) or -40oC to , µA 4 ISL6551 These specifications apply for VDD = VDDP = 12V and TA = 0oC to 85 oC (ISL6551IB , pF ISL6551 These specifications apply for VDD = VDDP = 12V and TA = 0oC to 85 oC (ISL6551IB) or , ) -3 % 6 ISL6551 These specifications apply for VDD = VDDP = 12V and TA = 0oC to 85 oC , Amplifier to: 1) limit the EAO to the soft start voltage level; and 2) over-ride the reference signal at
Intersil
Original
12v center tap transformer flyback 200w zvs flyback driver 399K eao diode block resonant half bridge schematic FN9066 TB389 ISO9000

PWM controller for ZVS half-bridge

Abstract: 6551IR Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to +85°C, Unless Otherwise Stated , ISL6551IREC Electrical Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to , 12V and TA = 0°C to +85°C, Unless Otherwise Stated. Parameters with MIN and/or MAX limits are 100 , the bridge circuit, would falsely trigger the comparator generating the PWM signal. To prevent false , voltage, the CSS pin can be connected to a reference based clamp circuit, as shown in Figure 4. To make
Intersil
Original
PWM controller for ZVS half-bridge 6551IR MIC4422BM IL207 ic isl 887 Current-doubler rectifier FN6762

ICL6551

Abstract: (up to 1.6nF at 1MHz) applications, an uncommitted high bandwidth (10MHz) error amplifier for feedback , REFERENCED TO VSS 17 DCOK 10 CS_COMP 15 SHARE 19 SYNC2 20 SYNC1 25 PGND 1 VSS CIRCUIT , from VDD These specifications apply for VDD = VDDP = 12V and TA = 00C to 85 0C, unless otherwise , Electrical Specifications PARAMETER These specifications apply for VDD = VDDP = 12V and TA = 00C to 85 0C , These specifications apply for VDD = VDDP = 12V and TA = 00C to 85 0C, unless otherwise stated. SYMBOL
Intersil
Original
ICL6551

ICL6551

Abstract: 12v center tap transformer details. These specifications apply for VDD = VDDP = 12V and TA = 00C to 85 0C, unless otherwise stated , 12V and TA = 00C to 85 0C, unless otherwise stated. Electrical Specifications PARAMETER SYMBOL , Spikes, due to parasitic elements in the bridge circuit, would falsely trigger the comparator generating , current source is fed into a control pin on the error amplifier. This causes the Error Amplifier to: 1 , can be connected to a reference-based clamp circuit as shown in Figure 5. To make the Vclamp less
Intersil
Original
MO-220 transformer 12V 12v center tap AN1002 HIP2100 ISL6550 ISL6551IB-T PUB95
Abstract: , VDDP2) Supply Voltage These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85 °C , load 5 44 18 20 ns ns ns ns These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85 °C , specifications apply for VDD = VDDP = 12V and TA = 0°C to 85 °C (ISL6551IB) or -40°C to 105°C (ISL6551AB), Unless , R_LEB = 12V LATCHING SHUTDOWN (LATSD) Fault Threshold Fault_NOT Threshold Time to Set latch (Note 4) ON , Spikes, due to parasitic elements in the bridge circuit, would falsely trigger the comparator generating Intersil
Original
Abstract: specifications apply for VDD = VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to 105°C (ISL6551AB , ISL6551 Electrical Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85 , specifications apply for VDD = VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to 105°C (ISL6551AB , signal (EAO). Spikes, due to parasitic elements in the bridge circuit, would falsely trigger the , precision bandgap circuit. - This pin must be pulled up to VDD with a resistance of approximately 399kâ Intersil
Original

eao LAMP MAX 48V

Abstract: ISL6651 (up to 1.6nF at 1MHz) applications, an uncommitted high bandwidth (10MHz) error amplifier for feedback , Voltage Bias Current from VDD These specifications apply for VDD = VDDP = 12V and TA = 00C to 85 0C , for VDD = VDDP = 12V and TA = 00C to 85 0C, unless otherwise stated. SYMBOL tLEB R_LEB = 20K R_LEB = 140K R_LEB = 12V LATCHING SHUTDOWN (LATSD) Fault Threshold Fault_NOT Threshold Time to Set Latch (Note , elements in the bridge circuit, would falsely trigger the comparator generating the PWM signal. To prevent
Intersil
Original
eao LAMP MAX 48V ISL6651

500w audio amplifier circuit diagram

Abstract: 500W subwoofer amplifier circuit diagram architecture designed to reduce distortion. By taking its feedback signal from the filtered amplifier output, the high gain circuit design compensates for bridge mismatches and filter nonlinearities, to achieve a , /application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit , switching audio amplifier solutions. In combination with high performance output stages and open or closed loop architectures, the ZXCD1210 provides a high performance audio amplifier with all the
Zetex Semiconductors
Original
500w audio amplifier circuit diagram 500W subwoofer amplifier circuit diagram 300w audio amplifier diagram ZXCDSUBEV 200w subwoofer circuit NS 200w audio amplifier circuit diagram D-81541

1200w power amplifier circuit diagram

Abstract: 2000w power amplifier circuit diagram efficiency - 3 conversion stages · Lowest power density · Multiple conversion steps AC to 12V Bus , voltage lockout · Short circuit protection Specifications · Input voltage range: 38VDC to 75VDC · , regain control bandwidth back to 82KHz and achieve a 4.8x reduction in voltage deviation. 1.2V C = , current issues · Higher I2R losses · Few battery back-up options · No secondary grounds 12V RECTIFICATION 12V RECTIFICATION 94.5% Efficiency 94.5% Efficiency Description Page(s) DESCRIPTION
Lineage Power
Original
1200w power amplifier circuit diagram 2000w power amplifier circuit diagram 2000w power amplifier diagram 1200w amplifier 4000w power amplifier dps1200

200w power amplifier PCB layout

Abstract: zvs flyback driver Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to , ISL6551 Electrical Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85 , VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to 105°C (ISL6551AB), Unless Otherwise Stated , Spikes, due to parasitic elements in the bridge circuit, would falsely trigger the comparator , bandgap circuit. - This pin must be pulled up to VDD with a resistance of approximately 399k for proper
Intersil
Original
200w power amplifier PCB layout

200W PUSH-PULL

Abstract: AN1002 VDD = VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to 105°C (ISL6551AB), Unless Otherwise , These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to 105 , Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to 85°C (ISL6551IB) or -40°C to , compared to a control signal (EAO). Spikes, due to parasitic elements in the bridge circuit, would , , VDDP1, VDDP2) - The IC is powered from a 12V ± 10% supply. - VDD supplies power to both the digital
Intersil
Original
200W PUSH-PULL
Abstract: These specifications apply for VDD = VDDP = 12V and TA = 0°C to +85°C, Unless Otherwise Stated , Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to +85°C, Unless Otherwise Stated , = 140k R_LEB = 12V LATCHING SHUTDOWN (LATSD) Fault Threshold Fault_NOT Threshold Time to Set latch , ISL6551I Electrical Specifications These specifications apply for VDD = VDDP = 12V and TA = 0°C to +85°C , control signal (EAO). Spikes, due to parasitic elements in the bridge circuit, would falsely trigger the Intersil
Original
Showing first 20 results.