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LT1332CNW Linear Technology Wide Supply RangeLow Power RS232 Transceiver with 12V VPP Output for Flash Memory visit Linear Technology - Now Part of Analog Devices
LT1332CNW#PBF Linear Technology Wide Supply RangeLow Power RS232 Transceiver with 12V VPP Output for Flash Memory visit Linear Technology - Now Part of Analog Devices
LTC1262CS8#TRPBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1263CS8 Linear Technology LTC1263 - 12V, 60mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1263CS8#TRPBF Linear Technology LTC1263 - 12V, 60mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1263IS8#PBF Linear Technology LTC1263 - 12V, 60mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

128M NAND Flash Memory

Catalog Datasheet MFG & Type PDF Document Tags

6553a

Abstract: ATV4-91SC AT91SC512384-128M is a dual chip solution, binding the AT91SC512384RCT device to a NAND Flash memory. The , Microcontrollers Memory · 128M Bytes of external Flash memory - Typically 100,000 Write/Erase Cycles · 512K , (Inter Chip) 0.8e Interface · Interface for External NAND Flash Memory · Single Wire Interface (Digital , Bytes of Flash memory, organized in a 128M x 8 bits configuration. The AT91SC512384-128M is delivered , Interface Flash Memory Array USB AT91SC512384RCT Architectural Overview 2 NAND Flash
Atmel
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AT91SC512384-128M 6553a ATV4-91SC SC100 securcore SC100TM

samsung 1Gb nand flash

Abstract: samsung 2GB Nand flash Flash coming soon ! Samsung 1GB Nand Flash Memory - Introduction K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 128M x 8 Bit NAND Flash Memory General Description The K9K1G08U0M is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective , Others:- Nand Flash, 2GB, 1GB, 512M, 256M, 128M, 64M, 32M, 4M - Smart Media Card, 128M, 64M, 32M, 16M , ~3.6V Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (512 + 16)bit
SemiRim
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samsung 1Gb nand flash samsung 2GB Nand flash 128M NAND Flash Memory 512M x 8 Bit NAND Flash Memory SAMSUNG NAND FLASH K9K1G08U0M-YCB0/YIB0 528-B

K9HCG08U5M

Abstract: K9WBG08U1M SAMSUNG " Mobile Solution Forum 2007 SAMSUNG Mobile Memory |C| 11 I m Contents NAND Flash 03 NOR , . 15 Multi Media Card 17 NAND Flash < Living in NAND Flash world Living in the stage of 20GB memory , 's Gigabyte NAND Flash memory which can make your product much slimmer, smaller, and spectacular. > Doubling , using NAND Flash Memory which has a high reliability and a high technology for a storage media. As the , Samsung's NAND Flash has firmly established itself as the key solution in many popular yet relatively new
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K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 120GB 128MB 256MB 512MB 256MC99

ISC-MPD-64M16F

Abstract: KM29U128 , state of the art Samsung 128Mbit TSOPs Highest density memory available today Samsung 128M Flash , (16,777,216) x 8bit NAND Flash Memory with a spare 512K (524,288) x 8bit. Its NAND cell provides the , 1 Gigabit FLASH Memory Stack Features: Low Profile: same PCB area as a single device , Data Protection Samsung 128M Flash Chip Samsung 128M Flash Chip Automatic Program and Erase Samsung 128M Flash Chip Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate
Irvine Sensors
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ISC-MPD-64M16F KM29U128 Irvine Sensors

29F2G08

Abstract: micron 29F2G08AA range NAND Flash memory device types. The internal 60 MHz PLL driven by the 12MHz oscillator is used , Supports all type of NAND Flash devices ­ Reed-Solomon Encoder/Decoder for MLC NAND Flash support , 8MB/s for write operations with one single NAND Flash device ­ 10MB/s for read and 10MB/s for write operations in multi mode NAND Flash device topology Embedded ST7 8-bit MCU Supply Management ­ 3.3V , write operation with two NAND Flash devices ­ Less than 500µA in suspend mode Clock Management ­
STMicroelectronics
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29F2G08 micron 29F2G08AA 29F2G08AA TH58NVG2S3 micron 29F2G08 TC58DVG14B1FT00 ST72681 10MB/ TQFP48

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 X X X X - X X X X 1. Memory (K) 2. NAND Flash : 9 3. Small , Bad Block Temp Package -Generation Mode SAMSUNG Memory NAND Flash Small Classification , its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM products are , in compliance with RoHS JANUARY 2009 www.samsung.com/semi/dram MLC NAND Flash MOQ , JANUARY 2009 MLC NAND Flash 15 SLC NAND Flash Family Density Tech 64Gb DSP 16Gb DDP
Samsung Semiconductor
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K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 BR-09-ALL-001

8bit nand flash

Abstract: ISC-MPD-32M16F (16,777,216) x 8bit NAND Flash Memory with a spare 512K (524,288) x 8bit. Its NAND cell provides the , ½ Gigabit FLASH Memory Stack Features: Low Profile: same PCB area as a single device , , state of the art Samsung 128Mbit TSOPs Samsung 128M Flash Chip Automatic Program and Erase Page , Samsung 128M Flash Chip Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology Endurance : 1M Program/Erase Cycles Data Retention : 10 years Samsung 128M Flash Chip CE-A
Irvine Sensors
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ISC-MPD-32M16F 8bit nand flash

ELPIDA 512MB NOR FLASH

Abstract: MT46V16M16 Programmer's Model 3.1 3.2 Chapter 4 About the NAND flash memory controller , 5-39 NAND Flash Memory Controller 6.1 6.2 6.3 6.4 6.5 Chapter 7 PrimeCell MPMC test , memory timing diagram . A-11 Example NAND flash memory timing , Memory clock and feedback clock strategy . 10-48 NAND flash , . 10-4 Pin counts for system with dynamic and static memory, NAND flash memory, and TIC . 10-8
ARM
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PL176 ELPIDA 512MB NOR FLASH MT46V16M16 TIC 122 Transistor datasheet MT28S4M16 MT46V8M16

w3j128m72

Abstract: ddr sram 256mb 23mm 17mm x 23mm Temperature C, I, M C, I, M C, I, M C, I, M Embedded Flash - SLC NAND SLC , without notice. Ceramics SRAM · Flash · EEPROM · Mixed Memory MCPs · Hermetic , SDRAM MCPs Size 1GB 1GB 1GB 1GB Organization 256M x 32 128M x 64 128M x 72 2 x 256M x 16 , 64 64M x 72 128M x 72 128M x 64 Registered DDR2 SDRAM MCPs Size 1GB Organization 128M x , Organization 16M x 64 16M x 72 NOR Flash MCPs Size Organization Conventional 16MB 2M x 64 Page Mode
White Electronic Designs
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W3J128M72G-XNBX W3H32M64E-XSBX W3H32M72E-XSB2X W3H128M72E-XSBX w3j128m72 ddr sram 256mb 256mb EEPROM Memory NAND Flash Qualification Reliability 2.5 pata DDR2 128M x 32 W3J256M32G-XNBX W3J128M64G-XNBX W3J2256M16G-XNBX

toshiba lcd monochrome

Abstract: toshiba MLC nand flash NAND Flash ROM interface: 2 channels (128M x 2) · MAC (multiply-accumulate unit) : 1 channel (32 x 32 , 64K/STN MLC/SLC NAND Flash ROM interface: 2 channels (128M × 2) MAC (multiply-accumulate unit , with color LCD controller, USB control, and NAND Flash ROM interface TLCS-900/H1 CPU Core · , SDRAM controller · Color LCD controller (4096/TFT 4096/STN) · NAND Flash ROM interface · I2S , Family Family Family 32-bit microcontroller with monochrome LCD controller and NAND Flash ROM
Toshiba
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toshiba lcd monochrome toshiba MLC nand flash Datasheet toshiba NAND Flash MLC LQFP144 TLCS-900 toshiba LCD TMP91C815FG TLCS-900/L1 TMP91C016FG

K5W1G

Abstract: KMCME0000M-B998 SAMSUNG SEMICONDUCTOR, INC. BR-07-ALL-001 AUGUST 2007 NAND Flash MEMORY AND STORAGE NAND FLASH DISCRETE COMPONENTS Density SLC NAND 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 4Gb 8Gb , MEMORY AND STORAGE NAND Flash Ordering Information NAND FLASH ORDERING INFORMATION K 1 9 2 , DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION ASYNCHRONOUS SRAM HIGH , DDP QDP DSP Product charts for flash fusion memory products ­ OneNAND, moviNAND and Flex-OneNAND
Samsung Electronics
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K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA DDR3-800 M378B6474CZ0-C M378B2873CZ0-C M378B5673CZ0-C DDR3-1066 DDR3-1333

W3J2256M72-XPBX

Abstract: W3J128M64G-XPBX 64 64M x 32 128M x 32 Part Number W72M64VB-XBX W78M32VP-XBX W78M64VP-XSBX W764M32V-XSBX W7128M32V-XSBX* Embedded Flash - SLC NAND SLC NAND SSD BGA Size Interface Part Number Voltage (V , SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part , 128M x 72 128M x 64 Registered DDR2 SDRAM MCPs Size Organization Part Number 1GB 128M , 2MB 4MB 4MB Organization 512K x 32 256K x 72 512K x 72 NBL 512K x 72 NBL NOR Flash MCPs
White Electronic Designs
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W3J128M64G-XPBX W3J128M72G-XPBX W3J2256M72-XPBX DDR1 512M W3H128M72 ddr3 sdram chip 128mb W3J256M72G-XPBX W3H64M64E-XSBX W3H64M72E-XSBX

transistor w04

Abstract: KM29U128T, KM29U128IT 16M x 8 Bit NAND Flash Memory FEATURES · Voltage supply : 2.7V-3.6V · , * Input Data Latch Cycle Preliminary FLASH MEMORY 64 ELECTRONICS 128M Timing Diagram & Device , ELECTRONICS 128M Timing Diagram & Device Operation DATA PROTECTION Preliminary FLASH MEMORY The , Package : 48 - pin TSOP Typel -1 2 x 20 / 0.5 mm pitch Preliminary FLASH MEMORY GENERAL DESCRIPTION The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Mem ory with a spare 256K(524> 288)x8bit. Its NAND
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transistor w04

NOR Flash

Abstract: Samsung "NAND Flash" "ordering information" -gons 1 2 - 120ns 15- 150ns 14 NAND FLASH MEMORY 1 SAMSUNG Memory NAND FLASH Product Density 2 3 4 5 6 7 8 Bad Block Package Temp. Revision KM 29 B CCCCC D E F G 1. SAMSUNG Memory 2. NAND Flash 3. Product N - 5V , 3. ORDERING INFORMATION NOR FLASH MEMORY Z 3 KM 28 B CCC D E - F GG SAMSUNG Memory NOR , Densitv/Oraanization 1. SAMSUNG Memory 2. NOR Flash 3. Operating Voltage Range U -
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NOR Flash Samsung "NAND Flash" "ordering information" samsung memory samsung nor flash 800-------------------8M 48-CSP 32000---------------32M

TSOP 48 Package nand memory

Abstract: NAND flash memory KM28U160 80/90/120ns < NAND FLASH MEMORY > Density 128M bit Org. 16M X 8 Power Supply , 1. INTRODUCTION 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 1M x 8 512KX 16 4.5V-5.5V 2Mx8 1Mx16 KM28N800 55/70/90 Standard Temp. Industrial Temp Part Number KM28U800 90/100/120ns Features { Package 48 TSOP I 44SO P 48CSP 48 , KM29V16000ATS 12 Density 8M bit Org. 1M x 8 Power Supply 2.7V-5.5V Part
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KM29N040T TSOP 48 Package nand memory NAND flash memory TSOP I 1Mx16 flash KM29U64000T KM29U64000IT KM29V64000T KM29W32000T KM29W32000IT KM29W32000TS

SAMSUNG NAND Flash Qualification Report

Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability Information Component (I) Device (Component) Org. Vcc 2.7V ~ 3.6V 128M bit NAND Flash 16MX8 , (Component) Product Org. Vcc 2.7V ~ 3.6V 128M bit NAND Flash 8MX16 Bits 63TBGA 1.7V , ) Device (Component) ­ Lead Free Product Org. 48TSOPI 2.7V ~ 3.6V 128M bit NAND Flash , Component (IV) Device (Component) ­ Lead Free Product Org. Vcc 2.7V ~ 3.6V 128M bit NAND Flash , SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die
Samsung Electronics
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K9F2808U0C-VCB0 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND qualification NAND read disturb 48TSOP1 48WSOP1 K9F2808U0C-VI

Datasheet toshiba NAND Flash MLC

Abstract: toshiba nand flash controller : 1 channel 64K-/4096-/256-colorTFT/STN MLC/SLC NAND Flash ROM interface: 2 channels (128M × 2 , microcontroller is used with external 1-Mbit NOR Flash memory. Note 1: Can also have internal ROM, in which case , -bit microcontroller with monochrome LCD 900 Family Family Family controller and NAND Flash ROM interface , execution) · LCD controller · NAND Flash ROM interface · I2S interface · 10-bit AD converter · RTC · 8 , controller : 1 channel (16M-/64K-/4096-/256-colorTFT/STN) · MLC/SLC NAND Flash ROM interface: 2 channels
Toshiba
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toshiba nand flash Handwriting Recognition Microcontroller BGA228 Toshiba slc TMP92CF29AFG tlcs-900 family

SAMSUNG NAND FLASH TRANSLATION LAYER

Abstract: SAMSUNG NAND Flash Qualification Report APPLICATION NOTE for NAND Flash Memory (Revision 2.0) Memory Product & Technology Division , . SYSTEM INTEFACING This section provides a brief overview of implementing NAND Flash Memory into the , in Memory Technology 5 ELECTRONICS The interface and associated timings for NAND Flash and , burst-reading, interleaving between NAND Flash and other memory devices can be easily implemented. Spare 16 , . Wear-Leveling Algorithm In NAND flash memory, erase/ program operation is accomplished by the F-N (Fowler
Samsung Electronics
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SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand -Apr-2004 K9F1208U0M 64M x 8 Bit NAND Flash Memory 1.0 04-Jul-2004 K9K1G08U0M 128M x 8 Bit NAND Flash Memory 0.5 04-Jul-2003 K9K1Gxxx0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 0.5 21-May-2004 K9T1G08U0M Samsung K9F2808x0B 128M x 8 Bits NAND Flash Memory 0.4 24-May-2004 Note: As the , AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed , ) STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed
STMicroelectronics
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NAND128-A NAND256-A NAND512-A NAND01G-A Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u WSOP48 NAND FLASH BGA Samsung Nand

samsung ddr3 ram MTBF

Abstract: KLM2G1HE3F-B001 Pre-Program Version Customer Bad Block Temp Package -Generation Mode SAMSUNG Memory NAND Flash Small Classification Density Density Organization Organization Vcc 1. Memory (K) 2. NAND Flash , Memory NAND Density DRAM Density/Organization Voltage (NAND-DRAM) Package 256Mb (x16 , PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its
Samsung Semiconductor
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samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLMAG2GE4A-A001 KLMAG KLM4G1FE3B-B001 k4B2G1646 BR-12-ALL-001
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