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125-080 Datasheet, Circuit, PDF, & Application Note Results




Datasheet Search Results 1 - 1 of about 1 for 125-080
ID 1 125-080 Bivar, Inc. Perm-O-Pads - TO-18 and T-1 3/4 (5mm) LED Mounts 819.84 Kb, 1 Pages. Buy Now!

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Contextual Datasheet Results 1 - 50 of about 72 for 125-080
ID 1 First line: perm-o-pads TO-18 T-13 / 4 5mm Mounts Material Specifications White Natural Nylon AS D4066 Abstract: .. 125-080 Price Code: A. 123-050 Price Code: A. A55485 / 07-002N M38527 / 07-002N. A55485 / 01-034N M38527 / 01-034N. Standard Drawing Tolerances: unless otherwise indicated Fractions: 1/64 0.4 ..  datasheet abstract.. 819.84 Kb 1 Pages PDF Download
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ID 2 First line: EVERLIGHT ELECTRONICS CO.LTD. Technical Data Sheet Chip with Right Angle Lens 12-215SDRC / S530-XX / TR8 Abstract: .. Device No. : DSE-125-080 ECN : Technical Data Sheet. Chip LED with Right Angle Lens. 12-215SDRC/S530-XX/TR8. Features ̇Package in 8mm tape on 7〞diameter reel. ̇Compatible with automatic placement ..  datasheet abstract.. 96.99 Kb 7 Pages PDF Download
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ID 3 First line: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Supertex VP0808 enhancement-mode normallyoff Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 336.47 Kb 3 Pages

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ID 4 First line: VN4012 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 335.69 Kb 3 Pages

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ID 5 First line: VN3515 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 336.05 Kb 3 Pages

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ID 6 First line: VN2410 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 336.09 Kb 3 Pages

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ID 7 First line: VN2406 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 337.14 Kb 3 Pages

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ID 8 First line: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 337.45 Kb 3 Pages

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ID 9 First line: VN1206 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 336.21 Kb 3 Pages

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ID 10 First line: VN0808 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 342.23 Kb 3 Pages

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ID 11 First line: VN0606 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 340.78 Kb 3 Pages

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ID 12 First line: VN0300 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 335.22 Kb 3 Pages

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ID 13 First line: CL25 Simple 25mA Temperature Compensated Constant Current Driver Features operating range VA-B Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 548.3 Kb 6 Pages

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ID 14 First line: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 321.37 Kb 3 Pages

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ID 15 First line: VP2450 P-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 842.37 Kb 6 Pages

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ID 16 First line: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 595.67 Kb 5 Pages

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ID 17 First line: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 595.45 Kb 5 Pages

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ID 18 First line: VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 595.16 Kb 5 Pages

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ID 19 First line: VN0109 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 586.17 Kb 5 Pages

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ID 20 First line: VN0106 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 586.23 Kb 5 Pages

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ID 21 First line: VN0104 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 586.1 Kb 5 Pages

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ID 22 First line: TN0702 N-Channel Enhancement-Mode Vertical DMOS Features threshold 1.0V max. On-resistance guaranteed High Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 581.27 Kb 5 Pages

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ID 23 First line: CL525 Linear Fixed Constant Current Driver Features 25mA constant current drive 1.0V Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 515.97 Kb 6 Pages

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ID 24 First line: CL520 Linear Fixed Constant Current Driver Features 20mA constant current drive 1.0V Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 516.63 Kb 6 Pages

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ID 25 First line: Simple 20mA Temperature Compensated Constant Current Driver Features operating range VA-B 20mA Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 633.46 Kb 7 Pages

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ID 26 First line: Simple 20mA Temperature Compensated Constant Current Driver Features operating range VA-B 20mA Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 754.17 Kb 7 Pages

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ID 27 First line: VP3203 P-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 558.51 Kb 6 Pages

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ID 28 First line: VP2206 P-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 560.8 Kb 6 Pages

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ID 29 First line: VP2106 P-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 453.79 Kb 5 Pages

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ID 30 First line: VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 452.21 Kb 5 Pages

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ID 31 First line: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 542.27 Kb 6 Pages

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ID 32 First line: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown input Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 537.01 Kb 6 Pages

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ID 33 First line: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 457.44 Kb 5 Pages

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ID 34 First line: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 554.51 Kb 6 Pages

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ID 35 First line: VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 456.35 Kb 5 Pages

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ID 36 First line: VN10K N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 440.96 Kb 5 Pages

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ID 37 First line: VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown power Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 447.07 Kb 5 Pages

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ID 38 First line: TP2635 P-Channel Enhancement-Mode Vertical DMOS Features threshold -2.0V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 460.23 Kb 5 Pages

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ID 39 First line: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features threshold -2.4V max. High Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 695.22 Kb 6 Pages

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ID 40 First line: TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features threshold -2.4V max. High Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 575.1 Kb 5 Pages

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ID 41 First line: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features High input impedance high Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 560.27 Kb 6 Pages

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ID 42 First line: TP0620 P-Channel Enhancement-Mode Vertical DMOS Features threshold -2.4V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 589.68 Kb 5 Pages

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ID 43 First line: TP0606 P-Channel Enhancement-Mode Vertical DMOS Features threshold -2.4V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 453.21 Kb 5 Pages

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ID 44 First line: TP0604 P-Channel Enhancement-Mode Vertical DMOS Features threshold -2.4V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 717.79 Kb 6 Pages

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ID 45 First line: TN5325 N-Channel Enhancement-Mode Vertical DMOS Features threshold 2.0V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. ..  datasheet abstract.. 515.26 Kb 6 Pages

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ID 46 First line: TN2540 N-Channel Enhancement-Mode Vertical DMOS Features threshold 2.0V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 656.22 Kb 6 Pages

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ID 47 First line: TN2106 N-Channel Enhancement-Mode Vertical DMOS Features Free from secondary breakdown power drive Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 531.46 Kb 6 Pages

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ID 48 First line: TN0620 N-Channel Enhancement-Mode Vertical DMOS Features threshold 1.6V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 441.85 Kb 5 Pages

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ID 49 First line: TN0610 N-Channel Enhancement-Mode Vertical DMOS Features threshold 2.0V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 443.95 Kb 5 Pages

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ID 50 First line: TN0606 N-Channel Enhancement-Mode Vertical DMOS Features threshold 2.0V max. High input impedance Abstract: .. 170 .014† .014† .175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC ..  datasheet abstract.. 456.1 Kb 5 Pages

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