125-080 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 1 of about 1 for 125-080 | ||||
|---|---|---|---|---|---|
 |
125-080 | Bivar, Inc. | Perm-O-Pads - TO-18 and T-1 3/4 (5mm) LED Mounts | 819.84 Kb, 1 Pages. |  |
 |
|||||
| Fulltext Datasheet Results | 1 - 50 of about 110 for 125-080 | ||||
|---|---|---|---|---|---|
|
First line: M38527/01* PA11*Â M38527/01-036N* A55485 M38527 TO-18 T-13/4 (5mm) Mounts Material Specifications: White Natural Nylon, ASTM D4066 PA111, Rated 94V-2 Oxygen Rating Index: Over Standard Drawing Tolerances: (unless otherwise indicated) Fractions: 1/64 (0.4) 0.10 (2.5) .XXX 112-040 Abstract: .. 125-080 Price Code: A. 123-050 Price Code: A. A55485 A55485 / 07-002N 07-002N M38527 M38527 / 07-002N 07-002N . A55485 A55485 / 01-034N 01-034N M38527 M38527 / 01-034N 01-034N . Standard Drawing Tolerances: unless otherwise indicated Fractions: 1/64 0.4 .. Tags: A55485 M38527/01-036N* PA11*Â M38527/01* PA11* M38527/01 M38527* INDEX 032 PA111 | 819.84 Kb | 1 Pages | Original | |
|
|||||
|
First line: 12-215SDRC/S530-XX/TR8 Abstract: .. Device No. : DSE-125-080 ECN : Technical Data Sheet. Chip LED with Right Angle Lens. 12-215SDRC 12-215SDRC /S530-XX S530-XX /TR8. Features ̇Package in 8mm tape on 7〞diameter reel. ̇Compatible with automatic placement .. Tags: datasheet abstract.. | 96.99 Kb | 7 Pages | Original | |
|
|||||
|
First line: APPROVED Abstract: .. 125-080. STANDARD TOLERANCE UNLESS OTHERWISE SPECIFIED ®. DESCRIPTION REV.. A Engineering Update w/o Changes 02/16/04 M. C.. APPROVED DATE. TICONA NYLON 1310, NYLON 6/6, NATURAL. 3. MATERIAL .. Tags: datasheet abstract.. | 29.15 Kb | 1 Pages | Original | |
|
|||||
|
First line: Package Outline 3-ead TO-92 Package Outline (//N3) Seating Plane Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: datasheet abstract.. | 174.57 Kb | 1 Pages | Original | |
|
|||||
|
First line: Package Outline 3-ead TO-92 Package Outline (//N3) Seating Plane Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: datasheet abstract.. | 174.56 Kb | 1 Pages | Original | |
|
|||||
|
First line: 1.450 [36.83] nnnnnnnnnnnnnn .025 [0.64 uuuuuuuu .030-.055 [0.76-1.40] uuuuu Abstract: .. 125 .080 Â ±.020 [2.03 Â ± 0.51 ] TYP .055Â ±.005 TVD [1.40 Â ± 0.13] [3.18] MIN TYP r R E V I S I C N S LTR DESCRIPTION E.C.N. DATE BY/APP'D C REVISE PER CURRENT STD; REDRAW 10000 09/15/93 TL/ .600 [15.24 .. Tags: datasheet abstract.. | 57.3 Kb | 1 Pages | OCR Scan | |
|
|||||
|
First line: VN0300 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: VN0300 | 335.22 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN0606 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN0606 VN0606 | 340.78 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN0808 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN0808 | 342.23 Kb | 3 Pages | Original | |
|
|||||
|
First line: sivn* sivn VN3515 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: sivn* sivn fet sivn VN3515 | 336.05 Kb | 3 Pages | Original | |
|
|||||
|
First line: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Complementary P-Channel devices Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: 2N7008 2N7008 | 321.37 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN2222LL | 337.45 Kb | 3 Pages | Original | |
|
|||||
|
First line: SIVP VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Supertex VP0808 enhancement-mode (normallyoff) transistor that utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors, Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: VP0808 sivp* "Bipolar Transistors" VP0808 | 336.47 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN2410 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: vn2410 mos fet 120v VN2410 | 336.09 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN2406 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: mos fet 120v VN2406 | 337.14 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN4012 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN4012 | 335.69 Kb | 3 Pages | Original | |
|
|||||
|
First line: marking va transistors CL25 Simple 90V, 25mA, Temperature Compensated, Constant Current, Driver operating range (VA-B) 25mA ±10% 0.01%/°C typical temperature coefficient external components (two terminal device) paralleled higher current Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: marking va transistors CL25N3-G datasheet abstract.. | 548.3 Kb | 6 Pages | Original | |
|
|||||
|
First line: VN1206 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN1206 | 336.21 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN2406 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN2406 | 337.18 Kb | 3 Pages | Original | |
|
|||||
|
First line: VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Supertex VP0808 enhancement-mode (normallyoff) transistor that utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors, high Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: VP0808 | 348.97 Kb | 3 Pages | Original | |
|
|||||
|
First line: VN2410 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN2410 | 338.8 Kb | 3 Pages | Original | |
|
|||||
|
First line: marking n3 CL1K4 Simple, 90V, 20mA, Temperature Compensated, Constant Current, Driver operating range (VA-B) 20mA (VA-B) -8.5µA/°C typical temperature coefficient Available TO-243AA (SOT-89), TO-252 (D-PAK), TO-92 packages external components (two terminal device) paralleled higher current Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: marking n3 CL1K4 datasheet abstract.. | 754.17 Kb | 7 Pages | Original | |
|
|||||
|
First line: CL525 Linear, Fixed Constant Current Driver 25mA ±10% constant current drive 1.0V dropout rating transient immunity Temperature compensated 4.75 supply range Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: TO-252 pin out CL525K4-G CL525 | 515.97 Kb | 6 Pages | Original | |
|
|||||
|
First line: sivp* SIVP VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds High input impedance high gain Excellent thermal stability Integral source-to-drain diode Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: SIVP sivp* VP0104 | 595.16 Kb | 5 Pages | Original | |
|
|||||
|
First line: marking n3 VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds High input impedance high gain Excellent thermal stability Integral source-to-drain diode Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: marking n3 sivp* VP0106 | 595.45 Kb | 5 Pages | Original | |
|
|||||
|
First line: TN0702 N-Channel Enhancement-Mode Vertical DMOS threshold (1.0V max.) On-resistance guaranteed High input impedance input capacitance (130pF typical) Fast switching speeds on-resistance Free from secondary breakdown input output leakage Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: TN0702 | 581.27 Kb | 5 Pages | Original | |
|
|||||
|
First line: marking n3 VP2450 P-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds High input impedance high gain Excellent thermal stability Integral source-to-drain diode Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: marking n3 vp2450n3 sivp* VP2450 | 842.37 Kb | 6 Pages | Original | |
|
|||||
|
First line: CL520 Linear, Fixed Constant Current Driver 20mA ±10% constant current drive 1.0V dropout rating transient immunity Temperature compensated 4.75 supply range Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: CL520 | 516.63 Kb | 6 Pages | Original | |
|
|||||
|
First line: sivn fet sivn VN0109N3-G marking n3 VN0109 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: marking n3 VN0109N3-G VN0109N3 sivn fet sivn VN0109 | 586.17 Kb | 5 Pages | Original | |
|
|||||
|
First line: sivn fet VN0104N3-G marking n3 sivn VN0104 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: marking n3 VN0104N3-G sivn fet sivn VN0104 | 586.1 Kb | 5 Pages | Original | |
|
|||||
|
First line: marking n3 cl2n* Simple, 90V, 20mA, Temperature Compensated, Constant Current, Driver operating range (VA-B) 20mA ±10% 0.01%/°C typical temperature coefficient Available TO-243AA (SOT-89), TO-252 (D-PAK), TO-92 packages paralleled higher current Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: cl2n* marking n3 datasheet abstract.. | 633.46 Kb | 7 Pages | Original | |
|
|||||
|
First line: TRANSISTOR N3 marking n3 SIVP VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds High input impedance high gain Excellent thermal stability Integral source-to-drain diode Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: SIVP marking n3 TRANSISTOR N3 VP0109 | 595.67 Kb | 5 Pages | Original | |
|
|||||
|
First line: marking n3 VN0106 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: marking n3 vn0106 sivn fet sivn VN0106 | 586.23 Kb | 5 Pages | Original | |
|
|||||
|
First line: marking n3 CL525 Linear, Fixed Constant Current Driver 25mA ±10% constant current drive 1.0V dropout rating transient immunity Temperature compensated 4.75 supply range Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: marking n3 CL525K4-G CL525 | 540.04 Kb | 6 Pages | Original | |
|
|||||
|
First line: marking n3 CL520 Linear, Fixed Constant Current Driver 20mA ±10% constant current drive 1.0V dropout rating transient immunity Temperature compensated 4.75 supply range Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: marking n3 CL520 | 541.05 Kb | 6 Pages | Original | |
|
|||||
|
First line: CL520 CL520 Linear, Fixed Constant Current Driver 20mA ±10% constant current drive 1.0V dropout rating transient immunity Temperature compensated 4.75 supply range Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: CL520 CL520 | 542.24 Kb | 6 Pages | Original | |
|
|||||
|
First line: marking n3 CL525 Linear, Fixed Constant Current Driver 25mA ±10% constant current drive 1.0V dropout rating transient immunity Temperature compensated 4.75 supply range Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: marking n3 CL525 | 541.07 Kb | 6 Pages | Original | |
|
|||||
|
First line: Amp, 300V, Planar NPN, Plastic UPTA510 UPTA520 UPTA530 Designed High Speed Switching Applications Collector-Emitter Voltage: 300V Peak Collector Current: Economical Plastic Molded Construction Abstract: .. . 135 .170 .500 016 175 125 .080 .095 .045. MIN - .210 MIN. - .019 - .205 - .165 105 .105 055. [ill] 3/78 188. _UNITRDDE. UPTASlO UPTAS20 UPTAS20 ELECTRICAL SPECIFICATIONS at 25'C unless noted Test D.C. Current .. Tags: datasheet abstract.. | 81.44 Kb | 2 Pages | OCR Scan | |
|
|||||
|
First line: UPTB550 Amp, 500V, Planar NPN, Plastic UPTB520 UPTB530 UPTB540 UPTB550 Designed High Speed Switching Applications Collector-Emitter Voltage: 500V Peak Collector Current: Economical Plastic Molded Construction Abstract: .. .135 170 500 016 175 125 .080 095 J MIN - 210 MIN. - .019 - .205 - .165 .105 105 .045 - .055 3/78 190 om _UNITRODE UPTBS20 UPTBS20 ELECTRICAL SPECIFICATIONS at 25'C unless noted Test UPTBS30 UPTBS30 UPTBS40 UPTBS40 .. Tags: UPTB550 datasheet abstract.. | 82.44 Kb | 2 Pages | OCR Scan | |
|
|||||
|
First line: CL1K4 Simple, 90V, 20mA, Temperature Compensated, Constant Current, Driver operating range (VA-B) 20mA (VA-B) -8.5µA/°C typical temperature coefficient Available TO-243AA (SOT-89), TO-252 (D-PAK), TO-92 packages external components (two terminal device) paralleled higher current Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: CL1K4 datasheet abstract.. | 756.35 Kb | 7 Pages | Original | |
|
|||||
|
First line: Simple 90V, 20mA, Temperature Compensated Constant Current Driver operating range (VA-B) 20mA ±10% 0.01%/°C typical temperature coefficient Available TO-243AA (SOT-89), TO-252 (D-PAK), TO-92 packages paralleled higher current Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: datasheet abstract.. | 689.94 Kb | 7 Pages | Original | |
|
|||||
|
First line: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Ultra-low threshold High input impedance input capacitance Fast switching speeds on-resistance Freedom from secondary breakdown input output leakage Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: seimens 12 volt dc relay LP0701 | 556.43 Kb | 6 Pages | Original | |
|
|||||
|
First line: SITP TP0604 P-Channel Enhancement-Mode Vertical DMOS threshold (-2.4V max.) High input impedance input capacitance (95pF typical) Fast switching speeds on-resistance Free from secondary breakdown input output leakage Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: SITP marking wg TP0604 | 717.79 Kb | 6 Pages | Original | |
|
|||||
|
First line: SITP TP0606N3-G TP0606 P-Channel Enhancement-Mode Vertical DMOS threshold (-2.4V max.) High input impedance input capacitance (80pF typ.) Fast switching speeds on-resistance Free from secondary breakdown input output leakage Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: TP0606N3-G SITP TP0606 | 453.21 Kb | 5 Pages | Original | |
|
|||||
|
First line: sivn VN4E* VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Free from secondary breakdown input output leakage CISS fast switching speeds High input impedance high gain Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: VN4E* sivn VN2450 | 537.01 Kb | 6 Pages | Original | |
|
|||||
|
First line: 400V INDUSTRIAL voltage regulator High Input Voltage, Adjustable 3-Terminal Linear Regulator 13.2 450V input voltage range Adjustable 1.20 440V output regulation output voltage tolerance Output current limiting 10µA typical current Internal junction temperature limiting Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: 400V INDUSTRIAL voltage regulator 440v to 12v smps power supply LR8K4* voltage regulator 3-terminal sot-89 LR8N3-G LR8K4-G* adjustable regulator high voltage lr8n3 datasheet abstract.. | 1055.54 Kb | 10 Pages | Original | |
|
|||||
|
First line: SOT-23 IP TP2104 P-Channel Enhancement Mode Vertical DMOS FETs High input impedance high gain power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary breakdown Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: SOT-23 IP TP2104 | 560.27 Kb | 6 Pages | Original | |
|
|||||
|
First line: TN5325 N-Channel Enhancement-Mode Vertical DMOS threshold (2.0V max.) High input impedance high gain Free from secondary breakdown CISS fast switching speeds Logic level interfaces ideal CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line driver Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: TN5325 | 515.26 Kb | 6 Pages | Original | |
|
|||||
|
First line: TN0110 N-Channel Enhancement-Mode Vertical DMOS threshold 2.0V max. High input impedance input capacitance 50pF typical Fast switching speeds on-resistance Free from secondary breakdown input output leakage Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the JEDEC drawing. .. Tags: SITN TN0110 | 460.93 Kb | 5 Pages | Original | |
|
|||||
|
First line: TN2106 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain Complementary P-channel devices Abstract: .. 170 .014†.014†.175 .125 .080 .095 .045 .500. NOM - - - - - - - - -. MAX .210 .022†.022†.205 .165 .105 .105 .055 .610* JEDEC Registration TO-92 TO-92 . * This dimension is not specified in the original JEDEC .. Tags: TN2106 | 531.46 Kb | 6 Pages | Original | |
|
|||||
| Datasheets per page: 50 | 250 | 500 | |||||
Access Notice
Unusual activity from your IP address or subnet. Our Cross reference data is temporarily hidden from view. One of our administrators will manually check this activity.
Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive
