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115mV

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Abstract: /output difference control (VCC-OUT=200mV) Load detection(current) (115mV 200mV) ROS1 1.25V , 200mV RLB 100 OUT Input/output difference control Load current detection 115mV Energy , ( VLSP1) or decreasing ( VLSP2). ( hysteresis: VLSP1 = 200mV < > VLSP2 = 115mV) When the differential voltage between VCC and OUT falls to VLSP2 (115mV), MM1548 changes to the energy saving mode, and the , ) CV MODE (PO1:Control) VCS(115mV typ.) Energy saving current detection (load detection release Mitsumi
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MM1529 AC ENERGY SAVING CIRCUIT DIAGRAM ENERGY SAVING UNIT AC Diagram SAVING 2SB1424 block diagram of energy saving Mitsumi IF transformer AC100V
Abstract: (current) (115mV 200mV) 1.25V Reference voltage VCC=4.6V ROS1 VCC Load detection(voltage) (VCC , control (VCC=5.1V) ROS1 REF ROS2 Overvoltage detection (VCC, OUT=7V) Load 115mV Energy saving , ( hysteresis: VLSP1 = 200mV < > VLSP2 = 115mV) When the differential voltage between VCC and OUT falls to VLSP2 (115mV), MM1548 changes to the energy saving mode, and the photocoupler-turn-off circuit switches , voltage (between OUT and CS) [V] Energy saving mode (PO1:Open) CV MODE (PO1:Control) VCS(115mV typ Mitsumi
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Abstract: (current) (115mV 200mV) ROS1 1.25V Reference voltage VCC=4.6V VCC Load detection(voltage , OUT Input/output difference control Load current detection 115mV Energy saving current , ( hysteresis: VLSP1 = 200mV < > VLSP2 = 115mV) When the differential voltage between VCC and OUT falls to VLSP2 (115mV), MM1548 changes to the energy saving mode, and the photocoupler-turn-off circuit switches , :Control) VCS(115mV typ.) Energy saving current detection (load detection release ) Load current Mitsumi
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block diagram of energy saving system MITSUMI transformers energy saving PHOTOCOUPLER SERIES with gnd constant current ic RLB100
Abstract: curves when VFS = 115mV, with the bottom graph describing events when VFS = 175mV. The middle curve in , Span drift dependent on TCS and TCR (V_FS = 115mV) Spanne [mV] 120 110 TCmax TCtyp TCmin , squares in Figure 3). Calculating the minimum possible span (VFS = 115mV) Substituting in Equation 8 , Dimensioning a pressure sensor system with digital signal correction VOUT_FS = 115mV (1 ­ 0.0017 (­40 ­ 22.5°C) (1 + 0.0033 (­40 ­ 22.5°C) = 115mV (1 + 0.10625) (1 ­ 0.20625) = 115mV 1.10625 0.79375 Analog Microelectronics
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AM401 AMS5310 ic PRESSURE SENSOR 120625 pressure to current converter
Abstract: zeigt den Verlauf für VFS = 115mV, der untere Graph ist für VFS = 175mV aufgetragen. Die jeweils , digitaler Signalkorrektur Spannendrift in Abhängigheit von TCS und TCR (V_FS = 115mV) Spanne [mV , Berechnungen der minimal möglichen Spanne (VFS = 115mV) Eingesetzt in Gleichung 8 ergibt sich für T < 22,5°C: VOUT_FS = 115mV (1 ­ 0,0017 (­40 ­ 22,5°C) (1 + 0,0033 (­40 ­ 22,5°C) = 115mV (1 + 0,10625) (1 ­ 0,20625) = 115mV 1,10625 0,79375 100,98mV Für T > 25°C ergibt sich: VOUT_FS = 115mV (1 ­ 0 Analog Microelectronics
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DRUCK transistor smd za
Abstract: difference control (VCC-OUT=200mV) Load detection(current) (115mV 200mV) 1.25V Reference voltage VCC , =5.1V) ROS1 REF ROS2 Overvoltage detection (VCC, OUT=7V) Load 115mV Energy saving current detection , ( hysteresis: VLSP1 = 200mV < > VLSP2 = 115mV) When the differential voltage between VCC and OUT falls to VLSP2 (115mV), MM1548 changes to the energy saving mode, and the photocoupler-turn-off circuit switches , voltage (between OUT and CS) [V] Energy saving mode (PO1:Open) CV MODE (PO1:Control) VCS(115mV typ Mitsumi
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Abstract: 2 OFF 1 COUT VCC-OUT=200mV () 115mV200mV ROS1 1.25V VCC=4.6V VCC , Output 470 CNT VCC 200mV PC1 () RLB 100 OUT 200mV 115mV VCC4 , =4.6V VCC-OUTVLSP2 115mV OFF 0 1-3 VCC4.6V MM1548 OFF VCC3.5V 24.9V3.5V , 115mV/RLS 200mV/RLS 34mV/RCS 114.4mV/RCS - MM1548REF CCROS1 V ROS2 , 470RLS240A VLSP1RLS VLSP2RLS VLSP1=200mV VLSP2=115mV RLS - 1200 1100 1000 VLSP2 -
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mitsumi r14 2460k mitsumi 68 AC2MM1548 25VCC4 VPO10
Abstract: 0.9A s 20mS 3% 4800uF 115mV 150mV - 100uS 130uS - 115mV 150mV 100uS , 115mV 150mV - Settling Time 115mV 40uS 70uS 100% ~ 50% Max Load Settling Time Bel Fuse
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S7DB-12B1AH S7DB-12B1A0 10uF 450v TR-332 S7DB-12B1A
Abstract: 1.5A LP38842 CMOS LP38842 2 VBIAS N-MOS VIN VIN CMOS N MOS 1.8V 1.5V ESR 0.8V 1.2V 1.5V : 1.5A 115mV (typ) 1.5% 0.1%/A (typ) 30nA (typ) / 5 TO-220 TO-263 DSP TO-220TO-263 : - 40 125 : 1.5A 115mV (typ) ASIC : 30mA (typ) - PC National Semiconductor
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T05A T05D DS201030-03-JP
Abstract: 1.5A LP38842 CMOS LP38842 2 VBIAS N-MOS VIN VIN CMOS N MOS 1.8V 1.5V ESR 0.8V 1.2V 1.5V : 1.5A 115mV (typ) 1.5% 0.1%/A (typ) 30nA (typ) / 5 TO-220 TO-263 DSP TO-220TO-263 : - 40 125 : 1.5A 115mV (typ) ASIC : 30mA (typ) - PC National Semiconductor
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Abstract: LP38851 ds201310 20061206 LP38851 800mA LDO LP38851-ADJ CMOS LP38851 2 VBIAS N-MOS IN V VIN CMOS N MOS VOUT : 0.80V 1.8V VBIAS : 3.0V 5.5V : 10 F 800mA : 115mV (typ) VADJ - TJ 25 ± 1.5% VADJ - 0 TJ 125 ± 2.0% VADJ - - 40 TJ 125 ± 3.0% VADJ , -263 7 : - 40 125 : 800mA 115mV (typ) ASIC : 800mA 10mV (typ National Semiconductor
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TA07B TO220-7 AN-1378 JESD22-A114 TO-220 3 lead bend DS300025-02-JP LP38851MR MRA08B
Abstract: SINOCERA CY-YB-1 , , , . 11.5mv/v . 5MPa . 0.5%FS. . 0.5%FS. . 0.5%FS. . 150% FS . 0.3200KHz . -10+50 SINOCERA
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Sinocera 3200KH
Abstract: LP38851 ds201310 20061206 LP38851 800mA LDO LP38851-ADJ CMOS LP38851 2 VBIAS N-MOS IN V VIN CMOS N MOS VOUT : 0.80V 1.8V VBIAS : 3.0V 5.5V : 10 F 800mA : 115mV (typ) VADJ - TJ 25 ± 1.5% VADJ - 0 TJ 125 ± 2.0% VADJ - - 40 TJ 125 ± 3.0% VADJ , -263 7 : - 40 125 : 800mA 115mV (typ) ASIC : 800mA 10mV (typ National Semiconductor
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Abstract: D i g i t a l A u d io ADC s THD+N 84dB 90dB 92dB 92dB 95dB 86dB 86dB 94dB 100dB 103dB 10 0dB Device AK5330-VM AK5339-VP/VS AK5340-VS AK5340A-VS AK5340B-VS AK5343-VS AK5345-VS AK5350-VF AK5389-VP/VS AK5390-VP/VS AK5391-VS Resolution Dynam ic R ange 18 16 18 18 18 16 16 20 18 20 24 90dB 94dB 96dB 96dB 100dB 90dB 90dB 100dB 107dB 112dB 115dB S /N 90dB 94dB 96dB 96dB 10 0dB 90dB 90dB 100dB 107dB 112dB 115dB Power Dissipation Supply Voltage 65 m V 425m V 125m V 210m V 125m V 52 m V 100m V 115mV 550m V -
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AK5390-VP AK5390 AK5339 AK5339-vp AK5345 AK5340B AK5330
Abstract: low VCE(SAT) characteristics. The NPN CMLT3820G specifies a VCE(SAT) of 115mV @ 100mA, and 280mV @ Central Semiconductor
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cmlt7820g CMLT7820G
Abstract: www.national.com/jpn/ (RS) RS 115mV/1.4A 82m 80m RS RS 10mVp National Semiconductor
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LM25011 0472A Rt 50k MSOP-10EP DS300946-05-JP MUC10A
Abstract: ® REG103 REG 103 REG 103 REG 103 For most current data sheet and other product information, visit www.burr-brown.com DMOS 500mA Low Dropout Regulator FEATURES DESCRIPTION q NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV typ at 500mA and 3.3V Output Output , provides significant improvement over previous designs, including low dropout voltage (only 115mV typ at , (DC) loads, the REG103 will typically maintain regulation down to VIN to VOUT voltage drop of 115mV Intel
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pin diagram i3 processor basics of intel i3 processor pin configuration of i3 processor capacitor 2200 micro M 243190 pin diagram for core i3 processor 300PE 266PE 256-K
Abstract: LP38841 75mV (typ) @0.8A LP38842 115mV (typ) @1.5A LP38843 210mV (typ) @3.0A ± 1.5% (@25 Texas Instruments
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R103G50 sbvs010 REG103UA REG103U50 REG103GA REG103FA
Abstract: ® REG103 REG 103 REG 103 REG 103 For most current data sheet and other product information, visit www.burr-brown.com DMOS 500mA Low Dropout Regulator FEATURES DESCRIPTION q NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV typ at 500mA and 3.3V Output Output , provides significant improvement over previous designs, including low dropout voltage (only 115mV typ at , (DC) loads, the REG103 will typically maintain regulation down to VIN to VOUT voltage drop of 115mV National Semiconductor
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LM5070 TSSOP-16 LM2734 IC TX-2 PWM IC 48V dc poe lm3884 1.5a pse RJ-45 poe ethernet RJ-45 LM2736 550263-004-JP
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