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ISL78113AARAZ-T7A Intersil Corporation Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch; DFN8; Temp Range: -40° to 105°C visit Intersil Buy
ISL78113AARAZ-T Intersil Corporation Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch; DFN8; Temp Range: -40° to 105°C visit Intersil Buy
ISL9113AIRAZ-T Intersil Corporation Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch; DFN8; Temp Range: -40° to 85°C visit Intersil Buy
BQ24113ARHLR Texas Instruments Host-Controlled Synchronous Swithc-Mode Li-Ion Charger w/2A FET, 1 or 2 Cell 20-VQFN -40 to 85 visit Texas Instruments
TPS2113ADRBT Texas Instruments Autoswitching Power Mux 8-SON -40 to 85 visit Texas Instruments Buy
SN74ALS113AD Texas Instruments Dual J-K Negative-Edge-Triggered Flip-Flops With Preset 14-SOIC 0 to 70 visit Texas Instruments

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113A Datasheet

Part Manufacturer Description PDF Type
113A Merrimac Industries 0 Degree POWER DIVIDER / COMBINER Original
113A2 Lucent Technologies Power Module 5 Vdc Input Original
113AA2 Tyco Electronics Power Module,5 Vdc Input Original
113,AL Serpac Electronic Enclosures Boxes, Boxes, Enclosures, Racks, BOX 3.60X2.25X2.50 ALMOND Original
113AV Greenlee Textron Miscellaneous, Undefined Category, PUNCH RD .750 19MM Original

113A

Catalog Datasheet MFG & Type PDF Document Tags

LC 117A

Abstract: ¸' 1.13à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.17à¸' 1.18à¸' 1.18à¸' 1.20à¸' 1.19à¸' 1.21à¸' 1.21à , ¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.14à¸' 1.14à¸' 1.14à¸' 1.14à¸' 1.14à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.12à¸' 1.12à¸' 1.13à¸' 1.13à¸' 1.20 1.20 1.19 1.22 1.23 1.21 1.24 1.24 1.24 1.26 1.23 1.24
Mini-Circuits
Original
LC 117A ZX10-4A-27 GY1065 ZX10-4A-27-S M144271 ED-11601/5

1LH62

Abstract: SI8B 30 1. 2 1. 5 10 100 113A 1BL41 SS 100 1 60a 30 25 j 0. 98 1 100 100 trr , 10 200 113A 1DL41 SS 200 1 60a 30 253 0. 98 1 100 200 trrffiSgKB$ 1 9G , 200 1 30 50] 1. 2 1. 5 25] 10 200 25] 1S2577Ì03 113A 1GH45 SS 400 1 60a 20 25] 1. 1 1 100 , ®Si8B# 20K 1GH62 SS 400 1 50a 30 1. 3 1. 5 25] 10 400 25j 113A 1GU42 SS 400 1 15 25] 1. 5 1 50 400 trr
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OCR Scan
05NH45 05NU41 05NU42 1BH62 1BL42 1BZ61 1LH62 SI8B IN5625 1DH62 08V-100 5NH46

IN5625

Abstract: IN5627 30 1. 2 1. 5 10 100 113A 1BL41 SS 100 1 60a 30 25 j 0. 98 1 100 100 trr , 10 200 113A 1DL41 SS 200 1 60a 30 253 0. 98 1 100 200 trrffiSgKB$ 1 9G , 200 1 30 50] 1. 2 1. 5 25] 10 200 25] 1S2577Ì03 113A 1GH45 SS 400 1 60a 20 25] 1. 1 1 100 , ®Si8B# 20K 1GH62 SS 400 1 50a 30 1. 3 1. 5 25] 10 400 25j 113A 1GU42 SS 400 1 15 25] 1. 5 1 50 400 trr
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OCR Scan
IN5627 1JH62 IN4002 in5624 05V-50 08V-200 1S2576 1CL41 1CL42 1DL41A 1DL42 1DL42A
Abstract: ' 11.3â11.3â' 9.27â' 9.27â' 11.63â' 11.63â' 14.00â' 14.00â' 5260267 5260204 , / Flanges 6.57â' 6.57â' 8.93â' 8.93â' 11.3â11.3â11.3â' 13.66â' 13.66â' 16.02â , ' 8.93â' 8.93â' 11.3â11.3â11.3â' 13.66â' 13.66â' 16.02â' 16.02â' 16.02â' 9.27â VECTOR
Original

BTS 113A

Abstract: 113a Switch TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode , BTS 113A 60 V 11.5 A 0.17 TO-220AB C67078-S5015-A2 Maximum Ratings Parameter , BTS 113A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter , 60 tf ­ 40 55 2 ns BTS 113A Electrical Characteristics (cont'd) at Tj = 25 , 5.0 V, ITS(on) = 2 mA Semiconductor Group V ­ 2.5 °C us BTS 113A Examples for
Siemens
Original
GPT05155 BTS 113A 113a Switch C67078-S5015-A4 C67078-S5015-A3
Abstract: ,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Rise time tr - 7.6 - ns VDD=400V,#2;VGS=13V,#2;ID=11.3A , ,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Fall time tf - 5.8 - ns VDD=400V,#2;VGS=13#2;V,#2;ID=11.3A , VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate to drain charge Qgd - 15 - nC VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate charge total Qg - 44 - nC VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V 1) #2;Co Infineon Technologies
Original
IPL60R180P6 J-STD20 JESD22

1LH62

Abstract: 1BH62 30 1. 2 1. 5 10 100 113A 1BL41 SS 100 1 60a 30 25 j 0. 98 1 100 100 trr , 10 200 113A 1DL41 SS 200 1 60a 30 253 0. 98 1 100 200 trrffiSgKB$ 1 9G , 200 1 30 50] 1. 2 1. 5 25] 10 200 25] 1S2577Ì03 113A 1GH45 SS 400 1 60a 20 25] 1. 1 1 100 , ®Si8B# 20K 1GH62 SS 400 1 50a 30 1. 3 1. 5 25] 10 400 25j 113A 1GU42 SS 400 1 15 25] 1. 5 1 50 400 trr
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OCR Scan
1S2578 1s2579 1JZ61 08V-50 1S2580 1N3193 1N3194 1N3195 1N4001A 1N4002A
Abstract: ¸' 1.13à¸' 1.13à¸' 1.12à¸' 1.14à¸' 1.15à¸' 1.17à¸' 1.20à¸' 1.20à¸' 1.21à¸' 1.23à¸' 1.23à¸' 1.23à¸' 1.12à¸' 1.11à¸' 1.11à¸' 1.10à¸' 1.10à¸' 1.09à¸' 1.09à¸' 1.09à¸' 1.09à¸' 1.10à¸' 1.11à¸' 1.13à , ¸' 1.13à¸' 1.14à¸' 1.11à¸' 1.13à¸' 1.13à¸' 1.12à¸' 1.16à¸' 1.14à¸' 1.15à¸' 1.19à¸' 1.19à¸' 1.19à¸' 1.22à¸' 1.13à¸' 1.12à¸' 1.12à¸' 1.12à¸' 1.11à¸' 1.10à¸' 1.10à¸' 1.10à¸' 1.10à¸' 1.11à¸' 1.12à¸' 1.13à¸' 1.15à¸' 1.17à¸' 1.18à¸' 1.20à¸' 1.22à¸' 1.23à¸' 1.13 1.12 1.12 1.12 1.11 Mini-Circuits
Original
ZX10-4A-19 ZX10-4A-19-S 2002/95/EC M127604 ED-11601/3

LC 117A

Abstract: ¸' 1.34à¸' 1.27à¸' 1.22à¸' 1.20à¸' 1.12à¸' 1.13à¸' 1.14à¸' 1.15à¸' 1.15à¸' 1.12à¸' 1.13à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.13à¸' 1.14à¸' 1.16à¸' 1.17à¸' 1.17à¸' 1.15 1.16 1.18 1.19 1.19 , ¸' 1.34à¸' 1.37à¸' 1.42à¸' 1.48à¸' 1.55à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.17à
Mini-Circuits
Original
ZX10-4A-11 ZX10-4A-11-S ED-11601/1

BTS 113A

Abstract: D 3 S Refer to circuit design hints (see chapter Technical Information) Type BTS 113A vD S 60 , threshold voltage ^GS = ^D S < ^(B R )D S S 60 1.6 ^D S S 4ss 0.1 10 1.0 100 Values typ. BTS 113A Unit , , unless otherwise specified. BTS 113A 7 5 Parameter Symbol min. Values typ. max. Unit , specified. Parameter Symbol 1 Examples 2 - BTS 113A Unit Drain-source voltage Gate-source voltage , dissipation P,o t = / (Tc) BTS 113A Typ. drain-source on-state resistance ^DS(on) = / ( / o) Parameter
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OCR Scan
BTS113A

BTS 113A

Abstract: BTS113 D 3 S Refer to circuit design hints (see chapter Technical Inform ation) Type BTS 113A ^DS 60 , , unless otherwise specified. Param eter Sym bol min. Values typ. BTS 113A Unit max. Static , dissipation Plo l = f ( T c) BTS 113A Typ. drain-source on-state resistance ^DS(on) - ./(/d) Param eter , / D =./'(V'D S) Parameter: D = 0.01 , T C = 25 °C 26 A B T S 113A (/p =80/zs) \ = 40W 22 , 4.5 V BTS 113A Gate threshold voltage V'G S |th) = 1 (1 ) Param eter: VD S = l/ GS, / D = - 1 mA
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OCR Scan
BTS113 GPD05T

6r160p6

Abstract: 6r160p ,#2;VDS=0.400V Turn-on delay time td(on) - 12.5 - ns VDD=400V,#2;VGS=13V,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Rise time tr - 7.6 - ns VDD=400V,#2;VGS=13V,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Turn-off delay time td(off) - 40 - ns VDD=400V,#2;VGS=13V,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Fall time tf - 5.8 - ns VDD=400V,#2;VGS=13#2;V,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 , =400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate to drain charge Qgd - 15 - nC VDD=400V,#2;ID=11.3A
Infineon Technologies
Original
6r160p6 6r160p IPA60R160P6

p114a

Abstract: TLR113AP CURRENT Ip (mA) FORWARD CURRENT ip (mA) 141 TOSHIBA TLD 113P.TLD 113AP.TLD 114P,T , TOSHIBA TLD 113P.TLD 113AP .TLD 114P.TLD 114AP TOSHIBA LED LAMP TLG 113A P, TLG 114A P, T L , lead forming. 140 TOSHIBA TLD 113P,TLD 113AP,TLD 114P.TLD 114AP ly - IF T LG 113A P , 113P, TLU R 114P, TLY 113A P, TLY 114A P PANEL CIRCUIT INDICATOR · All P lastic Mold Type T L D , 114P T LR 113A P / T L R U 4 A P M A X IM U M RATINGS (Ta = 25°C) M aterials G aP GaAsP GaAsP GaAsP
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OCR Scan
TLR113AP TLR113A p114a tlg113ap TLY113 TLR113 TLG114AP 113P/114P TLY113AP TL0113A TLG113AP/114A
Abstract: ton90T ton20%mA 300 300 100 100 300 300 600 600 600 600 400 /Current drawn Idling Standby A 113A 113A 113A 113A 113A 87A 445A 445A 445A 445A FIR/At FIR:1mA SIR/At SIR:550A 0.01 0.01 0.01 0.01 0.01 Citizen Electronics
Original
S12RV S12R2 CIM51S12RV CIM55S12RV CIM86S7B CIM120S11
Abstract: 0.1 0.1 0.1 0.1 SQUARE HEADER 113A&113B PRINCIPAL SPECIFICATIONS Model Number 113A 113B , r f o r m a n c e JXU L_ 113B 113A /CI T I I IT 113B 3.5 113A/C n J u t- i¿~- 2.0 ct i/ i 11 mu 13B 113A/C 3 15 1.0 > 1.0 W FREQUENCY 100 IN MHz 1000 General Notes: 1. The 113A and 113B series of power dividers/combiners covers a broad frequency -
OCR Scan
MIL-P-23971

T74LS

Abstract: Package) M1 (Micro Package) C1 (Plastic Chip Carrier) ORDER CODES : T74LS 113A D 1 T74LS 113A C 1 T7 4LS 113A B 1 T74LS 113A M 1 PIN CO NNECTION (top view) DUAL IN LINE CHIP CARRIER s S * =? , n n n 9 10 11 12 13 NC = No Internal Connection September 1988 1/5 215 T74LS 113A , CZJ SGS-THOMSON ' li'l i ." 216 T74LS 113A G U AR AN TEED O PERATIN G RANGE Part Numbers , SGS-THOMSON rîKGôBOJlTEOBt.: 3/5 217 T74LS 113A AC SET-UP REQUIREMENTS : TA = 25 =C S ym bol tw t
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T74LS113A LC-0023
Abstract: ¸' 1.28à¸' 1.28à¸' 1.16à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.13à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.14à¸' 1.13à¸' 1.16à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.13à¸' 1.15 1.15 1.14 1.14 1.13 à¸' à¸' à , ¸' 1.24à¸' 1.21à¸' 1.20à¸' 1.19à¸' 1.12à¸' 1.12à¸' 1.13à¸' 1.14à¸' 1.15à¸' 1.12à¸' 1.12à¸' 1.13à¸' 1.14à¸' 1.15à¸' 1.12à¸' 1.12à¸' 1.13à¸' 1.14à¸' 1.15à¸' 1.12 1.12 1.13 1.14 1.15 Mini-Circuits
Original
M131858
Abstract: Flangeless W/Flanges 6.57â' 6.57â' 8.93â' 8.93â' 11.3â11.3â' 9.27â' 9.27â' 11.63â , /Flanges 6.57â' 6.57â' 8.93â' 8.93â' 11.3â11.3â11.3â' 13.66â' 13.66â' 16.02â , ' 8.93â' 8.93â' 11.3â11.3â11.3â' 13.66â' 13.66â' 16.02â' 16.02â' 16.02â' 9.27â VECTOR
Original
160-3U CCK160-3U CCK160-6U CCK220-3U CCK220-6U CCK280-6U

1LH62

Abstract: 1BH62 30 1. 2 1. 5 10 100 113A 1BL41 SS 100 1 60a 30 25 j 0. 98 1 100 100 trr , 10 200 113A 1DL41 SS 200 1 60a 30 253 0. 98 1 100 200 trrffiSgKB$ 1 9G , 200 1 30 50] 1. 2 1. 5 25] 10 200 25] 1S2577Ì03 113A 1GH45 SS 400 1 60a 20 25] 1. 1 1 100 , ®Si8B# 20K 1GH62 SS 400 1 50a 30 1. 3 1. 5 25] 10 400 25j 113A 1GU42 SS 400 1 15 25] 1. 5 1 50 400 trr
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OCR Scan
2 A 98 1GZ61 1JH46 1JU41 1JU42 1LZ61 1N4003A

MIL-DTL-38999 Series I and II

Abstract: 27° W ZP C D 77° - - 113° 81° 67° 123° 109° 75° 63° 127° 115° 74° 61° 129° 116° 77° 65° 125° 113° 77° 65° 125° 113° 77° 65° 125° 113° 80° 69° 121° 110° 80Â
Glenair
Original
MIL-DTL-38999 Series I and II MIL-DTL-38999

TRANSISTOR SMD CODE 6.8

Abstract: tbd 380 TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode , BTS 113A 60 V 11.5 A 0.17 TO-220AB C67078-S5015-A2 Maximum Ratings Parameter , BTS 113A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter , 60 tf ­ 40 55 2 ns BTS 113A Electrical Characteristics (cont'd) at Tj = 25 , 5.0 V, ITS(on) = 2 mA Semiconductor Group V ­ 2.5 °C us BTS 113A Examples for
Siemens
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SPPX2N60S5 SPBX2N60S5 TRANSISTOR SMD CODE 6.8 tbd 380 DIODE smd marking Ag MARKING CODE TBD X2N60S5 P-TO220-3-1 P-TO263-3-2

C67078-S5015-A2

Abstract: GPT05155 TOSHIBA TLD 113P.TLD 113AP .TLD 114P.TLD 114AP TOSHIBA LED LAMP TLG 113A P, TLG 114A P, T L , 113P, TLU R 114P, TLY 113A P, TLY 114A P PANEL CIRCUIT INDICATOR · All P lastic Mold Type T L D , 114P T LR 113A P / T L R U 4 A P M A X IM U M RATINGS (Ta = 25°C) M aterials G aP GaAsP GaAsP GaAsP , 113A P /T L G 114A P T L Y 113 A P / T L Y 114AP T L 0 1 1 3 A P /T L 0 1 1 4 A P T L S 1 1 3 P /T L S , NAME TLG 113A P T L Y 113A P T L0113A P TLS113P T L U R 113P T LR 113A P U n it E M ISSIO N SPEC TRU
Infineon Technologies
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Abstract: 30 1. 2 1. 5 10 100 113A 1BL41 SS 100 1 60a 30 25 j 0. 98 1 100 100 trr , 10 200 113A 1DL41 SS 200 1 60a 30 253 0. 98 1 100 200 trrffiSgKB$ 1 9G , 200 1 30 50] 1. 2 1. 5 25] 10 200 25] 1S2577Ì03 113A 1GH45 SS 400 1 60a 20 25] 1. 1 1 100 , ®Si8B# 20K 1GH62 SS 400 1 50a 30 1. 3 1. 5 25] 10 400 25j 113A 1GU42 SS 400 1 15 25] 1. 5 1 50 400 trr -
OCR Scan
P-T0220-3-1 P-T0263-3-2

all type of motherboard 775 socket

Abstract: socket AM2 pinout D 3 S Refer to circuit design hints (see chapter Technical Information) Type BTS 113A vD S 60 , threshold voltage ^GS = ^D S < ^(B R )D S S 60 1.6 ^D S S 4ss 0.1 10 1.0 100 Values typ. BTS 113A Unit , , unless otherwise specified. BTS 113A 7 5 Parameter Symbol min. Values typ. max. Unit , specified. Parameter Symbol 1 Examples 2 - BTS 113A Unit Drain-source voltage Gate-source voltage , dissipation P,o t = / (Tc) BTS 113A Typ. drain-source on-state resistance ^DS(on) = / ( / o) Parameter
Intel
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all type of motherboard 775 socket socket AM2 pinout schematic diagram of TV memory writer intel 775 motherboard diagram 775 motherboard intel pentium 3 motherboard schematic diagram PGA370 256KB

TEMPFET

Abstract: C67078-S5015-A2 ¸' 1.34à¸' 1.27à¸' 1.22à¸' 1.20à¸' 1.12à¸' 1.13à¸' 1.14à¸' 1.15à¸' 1.15à¸' 1.12à¸' 1.13à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.13à¸' 1.14à¸' 1.16à¸' 1.17à¸' 1.17à¸' 1.15 1.16 1.18 1.19 1.19 , ¸' 1.34à¸' 1.37à¸' 1.42à¸' 1.48à¸' 1.55à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.13à¸' 1.17à
Infineon Technologies
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TEMPFET

transistor ag qs

Abstract: transistor di 960 Pulsed source current 7c = 25 °C Inverse diode forward voltage Vg S = 0 V , / f = 11.3A Reverse recovery
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OCR Scan
transistor ag qs transistor di 960 transistor smd hq
Abstract: ' 11.3â11.3â' 9.27â' 9.27â' 11.63â' 11.63â' 14.00â' 14.00â' 5260267 5260204 , / Flanges 6.57â' 6.57â' 8.93â' 8.93â' 11.3â11.3â11.3â' 13.66â' 13.66â' 16.02â , ' 8.93â' 8.93â' 11.3â11.3â11.3â' 13.66â' 13.66â' 16.02â' 16.02â' 16.02â' 9.27â -
OCR Scan
SPPX6N60S5 SPBX6N60S5 VPTG5164 X6N60S5

6r160p

Abstract: ,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Rise time tr - 7.6 - ns VDD=400V,#2;VGS=13V,#2;ID=11.3A , ,#2;ID=11.3A, RG=1.7â"¦;#2;see#2;table#2;9 Fall time tf - 5.8 - ns VDD=400V,#2;VGS=13#2;V,#2;ID=11.3A , VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate to drain charge Qgd - 15 - nC VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate charge total Qg - 44 - nC VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,#2;ID=11.3A,#2;VGS=0#2;to#2;10V 1) #2;Co
Infineon Technologies
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60R160P6 IPW60R160P6 IPP60R160P6
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