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ADS7820UB/1K Texas Instruments 12-Bit 10us Sampling CMOS Analog-To-Digital Converter 28-SOIC -40 to 85 pdf Buy
ADS7820U/1K Texas Instruments 12-Bit 10us Sampling CMOS Analog-To-Digital Converter 28-SOIC -40 to 85 pdf Buy
TLV5628ID Texas Instruments OCTAL, SERIAL INPUT LOADING, 10us SETTLING TIME, 8-BIT DAC, PDSO16 pdf Buy

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Part Manufacturer Description Last Check Distributor Ordering
10USC10000MEFC20X25 Rubycon SNAP TERMINAL from $3.6890 (Dec 2016) Digi-Key Buy
10USC15000MEFC20X35 Rubycon SNAP TERMINAL from $2.7885 (Nov 2016) Digi-Key Buy
10USC15000MEFC22X30 Rubycon SNAP TERMINAL from $2.4180 (Nov 2016) Digi-Key Buy
10USC18000MEFC20X40 Rubycon SNAP TERMINAL from $3.9950 (Nov 2016) Digi-Key Buy
10USC18000MEFC25X30 Rubycon SNAP TERMINAL from $2.2230 (Nov 2016) Digi-Key Buy
10USC22000MEFC25X30 Rubycon SNAP TERMINAL from $2.0160 (Oct 2016) Digi-Key Buy
10USC47000MEFC35X35 Rubycon SNAP TERMINAL from $9.69 (Dec 2016) Digi-Key Buy
10USP4000MC45 Rubycon ES473-010M85-30X45 8 from $2.9250 (Dec 2016) Quest Components Buy

10us Datasheet

Part Manufacturer Description PDF Type Ordering
10USC10000M20X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
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10USC12000M20X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
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10USC12000M22X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC15000M20X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC15000M22X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC15000M25X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC18000M20X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC18000M22X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC18000M25X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame
10USC22000M22X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor
ri

4 pages,
67.64 Kb

Original Buy
datasheet frame

10us

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2/10us 10/1000us 2/10us 2/10us 10/700us 1/60ns 10/700us 1.2/50us 10/700us 1.2/50us 10/160us 10/560us 9/720us Required peak current (A) Current waveform 500 2/10us 100 10/1000us 500 2/10us 100 2/10us 150 5/310us 37.5 ESD contact discharge ESD air discharge 100 5 , capability 500A (2/10us) 500A (2/10us) 500A (2/10us) 500A (2/10us) 100A (10/560us) 35A (10/560us , ) 200A (2/10us) Secondary protection (4 lines protection) IEC61000-4-2 IEC61000-4-2 Level 4 MIL STD 883E, Method ... STMicroelectronics
Original
datasheet

14 pages,
490.47 Kb

VDE0878 500a GR-1089 IEC61000-2 LCDP1521 Mil-Std-883E PTC 150M SMAJ15CA VDE0433 usb to rj45 Repeater TRISIL SMP TPN3021 TPA270 SMPTPA 30157 amplifier 400W CAN TRANSCEIVER SOT23 package TEXT
datasheet frame
Abstract: Low for >10us after min 50us of EN DIR = Low for >10us after min 10us DIR = High after min , DIR = Low for >10us after min 50us of EN DIR = High Figure 4. after 50us of EN DIR = High Alternative 2: for >50us for >10us after min 10us DIR = Low after min 50us of EN Proposed Sequence to Initialize L9903 L9903 after VS is applied VS should be >7V before EN=HI VS >50us EN >10us >10us PWM , willb be switched-on (Sx forced o GND) for at least 10us (Cboot=100nF) to allow boostrap capacitor to ... STMicroelectronics
Original
datasheet

8 pages,
232.37 Kb

AN2229 L9904 ST L9904 L9903 application l9903 L9903/L9904 L9903 TEXT
datasheet frame
Abstract: :50mA IO:50mA 100mA 10us/div IO:50mA/div 150mA 10us/div 35mV IO:50mA/div 70mV VO:50mV/div VO:50mV/div IO:0.1mA IO:0.1mA 50mA 10us/div IO:50mA/div 150mA 10us/div IO:100mA/div 115mV 65mV VO:100mV/div VO:50mV/div Input rise characteristics (VDD=0V 2.0V,VCE=VDD,IO=50mA) 10us/div VDD:1V/div VO:0.5V/div CE rise characteristics (VDD=2.0V,VCE=0V VDD,IO=50mA) 10us/div VCE:1V/div VO:0.5V/div MITSUMI Fast response / 150mA ... Mitsumi
Original
datasheet

16 pages,
224.75 Kb

MM3416A29 MM3416A19 IC 2576 5.0v MM34 MM3416A18 MM3416 MM3416A15 TEXT
datasheet frame
Abstract: Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10us and , Avionics Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , power measured at the 10% point of the pulse with pulse width = 10usec, duty cycle = 10% and VDD = 50V , ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10us ... HVVi Semiconductors
Original
datasheet

8 pages,
929.17 Kb

resistor smd 1206 102 100b*500x 100B1R0JP500X 100B1R8JP500X 10uf 63v capacitor 33J6 Arlon capacitor 1206 63V Coaxicom FXT000158 ID Innovations J151-ND pF CAPACITOR 100v HVV0912-150 100 pf, ATC Chip Capacitor HVV0912-150 J152 HVV0912-150 capacitor 220uF/63V HVV0912-150 capacitor 10uF/63V HVV0912-150 HVV0912-150 HVV0912-150 TEXT
datasheet frame
Abstract: (MHz) Epoxy Sealed Lid  Gross Leak Qualified P Vd=50V, Pulse = 10us-10%, Idq=10mA Ndâ , 10Âus, 10% pulse conditions this LDMOS FET device supplies a minimum of 15 watts of power at 960/1215 , , Pulse=10Âus, 10%, TF=255C, F=F1, IDQ=10mA. 1.5 PIN(MAX) dB W VDD=50V, Pulse=10Âus, 10%, TF=255C, F=F1, IDQ=10mA. VDD=50V, PIN =0.8W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=10mA. 100% Power , =0.8W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=10mA. 100% Drain Current ID 1 2 A ... Integra Technologies
Original
datasheet

9 pages,
118.11 Kb

ILD0912M15HV TEXT
datasheet frame
Abstract: number ILD0912M150HV ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10Âus, 10 , ) PI (W) 960 Pulse format = 10Âus, 10%, IDQ = 10mA Nd= Drain efficiency (including bias current , VDD=50V, PIN =8W, Pulse=10Âus, 10%, TF=255C, F=F1, F2, F3, IDQ=10mA. W VDD=50V, Pulse=10Âus, 10%, TF=255C, F=F1, F2, F3, IDQ=10Ma. VDD=50V, PIN =8W, Pulse=10Âus, 10%, TF , POUT 150 212.4 W VDD=50V, PIN =8W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, F2, F3, IDQ ... Integra Technologies
Original
datasheet

8 pages,
114.77 Kb

ILD0912M150HV TEXT
datasheet frame
Abstract: 10Âus, 10% pulse conditions this LDMOS FET device supplies a minimum of 400 watts of power across the , =50V, PIN=50W, Pulse=10Âus, 10%, TF=255C, F=F1, IDQ=40mA. PIN(MAX) - 66 W VDD=50V, Pulse=10Âus, 10%, TF=255C, F=F1, IDQ=40mA. VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=40mA. GP 9 11 dB POUT 400 629 W VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency N’d 45 % VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF ... Integra Technologies
Original
datasheet

8 pages,
118.67 Kb

ILD0912M400HV TEXT
datasheet frame
Abstract: , 10us Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative , °C temperature with RF pulse conditions of pulse width = 10us and pulse period = 1ms. DESCRIPTION The high , Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10us Pulse, 1% Duty Cycle For Airborne , conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10usec, duty cycle , Transistor 1025-1150 MHz, 10us Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Typical ... HVVi Semiconductors
Original
datasheet

8 pages,
392.01 Kb

Johanson Technology ERJ8GEYJ100V C1206C103K1RACTU C1206C102K1RACTU 478-2666-1-ND 445-4109-2-ND 251R15S HVV1012-250 TEXT
datasheet frame
Abstract: 10us/div V=25.2mV 20mV/div 10us/div Low-impedance aluminum electrolytic capacitor 1000uF/10WV Fig 3 25°C Fig 4 CH2=20mV V=21.6mV 10us/div CH2=20mV V=84.8mV 20mV/div 10us/div 25°C Fig 6 CH2=20mV V=24.4mV 10us/div 10us/div 20mV/div 10us/div -20°C V=29.6mV 59 f =100kHz f =100kHz CH2=20mV 20mV/div 10us/div 20mV/div 10us/div -20°C Low-ESR Tantalum capacitor 100uF/10WV Fig 5 10us/div CH2=20mV 10us/div 20mV/div 10us/div ... SANYO Electronic Components
Original
datasheet

8 pages,
503.3 Kb

tantalum capacitor 20SV22M 22uf capacitor electrolytic capacitor 2200uF SANYO 10WV capacitor 2200uf Power supply capacitor 2200uf of capacitor 1000uf 25 v 1000uF electrolytic capacitor 25 v 1000uF capacitor capacitor 1000uf 30 v 2200uF electrolytic capacitor TEXT
datasheet frame
Abstract: Transistor 1025-1150 MHz, 10Âus Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , 1025-1150 MHz, 10Âus Pulse, 1% Duty ! For Airborne DME Applications ! ! ! PULSE CHARACTERISTICS ! , % point of the pulse with pulse width = 10Âusec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a , -550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10Âus Pulse, 1% Duty , pulse conditions of 10Âus pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was ... Advanced Semiconductor
Original
datasheet

9 pages,
1142.22 Kb

smd transistor code 12w transistor SMD 12W transistor SMD 12W MOSFET TEXT
datasheet frame
Abstract: Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10us and , Avionics Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10us , . width and 10%performancewith VDD = 50V and IDQ = 100mA. The pulse conditions of 10us pulse width and 10 ... PerkinElmer Optoelectronics
Original
datasheet

12 pages,
180.91 Kb

S3506 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 VTE1291-2 TEXT
datasheet frame
Abstract: factor (NAF) is included in the VLIMIT equation for the 10-Âus delay setting. This value is equal to 500 , , VLIMIT, is shown. This calculation is based on the 10-Âus delay setting so the NAF term is included in , (VLIMIT + 500 ÂuV) / 20 ÂuA NAF is used with the 10-Âus delay setting. NAF can be omitted in the RLIMIT , RLIMIT at the 10-Âus delay setting. Removing NAF from the VLIMIT and RLIMIT calculation at the 10-Âus , in the VSOURCE equation for the 10-Âus delay setting. This value is equal to 500 ÂuV and is used to ... OSI Laser Diode
Original
datasheet

2 pages,
389.85 Kb

TEXT
datasheet frame
Abstract: Low for >10us after min 50us of EN DIR = Low for >10us after min 10us DIR = High after min , DIR = Low for >10us after min 50us of EN DIR = High Figure 4. after 50us of EN DIR = High Alternative 2: for >50us for >10us after min 10us DIR = Low after min 50us of EN Proposed Sequence to Initialize L9903 L9903 after VS is applied VS should be >7V before EN=HI VS >50us EN >10us >10us PWM , willb be switched-on (Sx forced o GND) for at least 10us (Cboot=100nF) to allow boostrap capacitor to ... Texas Instruments
Original
datasheet

38 pages,
1831.55 Kb

TEXT
datasheet frame
Abstract: factor (NAF) is included in the VLIMIT equation for the 10-Âus delay setting. This value is equal to 500 , , VLIMIT, is shown. This calculation is based on the 10-Âus delay setting so the NAF term is included in , (VLIMIT + 500 ÂuV) / 20 ÂuA NAF is used with the 10-Âus delay setting. NAF can be omitted in the RLIMIT , RLIMIT at the 10-Âus delay setting. Removing NAF from the VLIMIT and RLIMIT calculation at the 10-Âus , in the VSOURCE equation for the 10-Âus delay setting. This value is equal to 500 ÂuV and is used to ... Texas Instruments
Original
datasheet

38 pages,
1831.47 Kb

TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
*2N2222 2N2222 Singly-balanced mixer circuit *.TRAN 10US 1MS *.TRAN 10us 100us *.TRAN 10US 250US 250US .TRAN 10US 500US 500US .PROBE V1 1 0 DC 12V V2 2 0 DC 1.6V *+ SIN(1.6V 1V 100KHZ 100KHZ 0 0 0) + PULSE(.6V 2.6V 0s 30ns 30ns 5us 10us) V3 3 0 DC 3.5 + SIN(3.5 .01V 103KHZ 103KHZ 0 0 0) V4 4 0 DC 3.5 + SIN(3.5V -0.1V 103KHZ 103KHZ 0 0 0) Q1 1 3 5 Q2N2222 Q2N2222 Q2 6 4 5 Q2N2222 Q2N2222 Q3 5 2 7 Q2N2222 Q2N2222 R1 1 6 2200 *C1 6 0 0.02UF *R2 7 0 470 R2 7 8 470 D1 8 0 diode .model Q2N2222 Q2N2222 NPN(Is=14.34f Xti=3
/datasheets/files/spicemodels/misc/modelos/2n222mix.cir
Spice Models 18/04/2010 1.05 Kb CIR 2n222mix.cir
Beckhoff EtherCAT - EL1012 EL1012, EL1014 EL1014, EL1018 EL1018 | 2-, 4-, 8-Kanal-Digital-Eingangsklemmen 24 V DC, 10 us Digital-Eingang EL101x   Signal-LED1 Eingang 1 +24 V 0 V  Signal-LED2  Eingang 2 Powerkontakt , 8-Kanal-Digital-Eingangsklemmen 24 V DC, 10 us Die digitalen Eingangsklemmen EL1012 EL1012, EL1014 EL1014 und EL1018 EL1018 erfassen die Eingangsklemmen der Serie EL101x verfügen über einen 10-us-Eingangsfilter. Ihren Signalzustand zeigen die
/datasheets/files/beckhoff/catalog/german/ethercat/el1012_el1014_el1018.htm
Beckhoff 10/11/2009 18.76 Kb HTM el1012_el1014_el1018.htm
No abstract text available
/download/27457929-392852ZC/00546.zip ()
Microchip 05/03/1998 23.9 Kb ZIP 00546.zip
No abstract text available
/download/47609293-390850ZC/00546.zip ()
Microchip 23/04/1998 23.9 Kb ZIP 00546.zip
Beckhoff EtherCAT - EL1012 EL1012, EL1014 EL1014, EL1018 EL1018 | 2-, 4-, 8-channel digital input terminals 24 V DC, 10 us Digital Input EL101x   Signal LED1 Input 1 +24 V 0 V  Signal LED2  Input 2 Power contact 0 V Power contact +24 V Power contact PE Top view terminals 24 V DC, 10 us The EL1012 EL1012, EL1014 EL1014 and EL1018 EL1018 digital input terminals acquire the binary
/datasheets/files/beckhoff/catalog/english/ethercat/el1012_el1014_el1018.htm
Beckhoff 10/11/2009 18.65 Kb HTM el1012_el1014_el1018.htm
SetupDelay ;setup delay >= 10uS. bcf ADCON0,adif ;reset a/d int flag (ADIF) bsf ADCON0 , plus the move etc should result in ;a total time of > 10uS. SetupDelay movlw .3 movwf TEMP ,ch0. movwf ADCON0 ;turn on a/d return ; ;This routine is a software delay of 10uS for
/datasheets/files/microchip/ech_src/an546/intad.asm
Microchip 12/12/1995 2.68 Kb ASM intad.asm
No abstract text available
/download/92011529-169531ZC/igbtsip.zip ()
Infineon 07/09/2000 58.47 Kb ZIP igbtsip.zip
No abstract text available
/download/57733679-391448ZC/an546.zip ()
Microchip 13/12/1995 27.35 Kb ZIP an546.zip
Description= LC 2MOS 10us uP Compatible 8-Bit ADC General Description The AD7576 AD7576 is a low cost, low power, microprocessor compatible 8-bit analog-to-digital converter, which uses the successive approximation technique to achieve a fast conversion time of 10us. The device is designed to operate with an external reference of +1.23V (standard bandgap reference) and converts input signals from 0V to 2V ref .
/datasheets/files/analog-devices/gendesc/595.htm
Analog Devices 05/06/2003 0.47 Kb HTM 595.htm
value movwf PORT_B ;output to port b call SetupDelay ;setup time >= 10uS. bcf ;a total time of > 10uS. SetupDelay movlw .3 movwf TEMP SD decfsz TEMP, F goto SD reg. return ; ;This routine is a software delay of 10uS for the a/d setup. ;At 4Mhz clock, the
/datasheets/files/microchip/ech_src/an546/sad.asm
Microchip 12/12/1995 2.28 Kb ASM sad.asm