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TLC5628CDR Texas Instruments SERIAL INPUT LOADING, 10us SETTLING TIME, 8-BIT DAC, PDSO16 visit Texas Instruments
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ADS7808P Texas Instruments 12-Bit 10us Serial CMOS Sampling Analog-to-Digital Converter 20-PDIP visit Texas Instruments

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10us Datasheet

Part Manufacturer Description PDF Type
10USC10000M20X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC12000M20X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC12000M22X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC15000M20X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC15000M22X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC15000M25X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC18000M20X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC18000M22X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC18000M25X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC22000M22X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC22000M25X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC22000M30X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC27000M22X45 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC27000M25X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC27000M30X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC33000M22X50 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC33000M25X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC33000M30X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC39000M25X45 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC39000M30X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
Showing first 20 results.

10us

Catalog Datasheet MFG & Type PDF Document Tags

CAN TRANSCEIVER SOT23 package

Abstract: amplifier 400W 2/10us 10/1000us 2/10us 2/10us 10/700us 1/60ns 10/700us 1.2/50us 10/700us 1.2/50us 10/160us 10/560us 9/720us Required peak current (A) Current waveform 500 2/10us 100 10/1000us 500 2/10us 100 2/10us 150 5/310us 37.5 ESD contact discharge ESD air discharge 100 5 , capability 500A (2/10us) 500A (2/10us) 500A (2/10us) 500A (2/10us) 100A (10/560us) 35A (10/560us , ) 200A (2/10us) Secondary protection (4 lines protection) IEC61000-4-2 Level 4 MIL STD 883E, Method
STMicroelectronics
Original
GR-1089 TPA270 CAN TRANSCEIVER SOT23 package amplifier 400W SMPTPA TRISIL SMP Mil-Std-883E PTC 150M K20/K21 SMP100LC-270 SMPTPA270 SMP50-270

l9903

Abstract: L9903 application Low for >10us after min 50us of EN DIR = Low for >10us after min 10us DIR = High after min , DIR = Low for >10us after min 50us of EN DIR = High Figure 4. after 50us of EN DIR = High Alternative 2: for >50us for >10us after min 10us DIR = Low after min 50us of EN Proposed Sequence to Initialize L9903 after VS is applied VS should be >7V before EN=HI VS >50us EN >10us >10us PWM , willb be switched-on (Sx forced o GND) for at least 10us (Cboot=100nF) to allow boostrap capacitor to
STMicroelectronics
Original
AN2229 L9904 L9903 application ST L9904 L9903/L9904 AN2229/10-05

MM3416A15

Abstract: MM3416 :50mA IO:50mA 100mA 10us/div IO:50mA/div 150mA 10us/div 35mV IO:50mA/div 70mV VO:50mV/div VO:50mV/div IO:0.1mA IO:0.1mA 50mA 10us/div IO:50mA/div 150mA 10us/div IO:100mA/div 115mV 65mV VO:100mV/div VO:50mV/div Input rise characteristics (VDD=0V 2.0V,VCE=VDD,IO=50mA) 10us/div VDD:1V/div VO:0.5V/div CE rise characteristics (VDD=2.0V,VCE=0V VDD,IO=50mA) 10us/div VCE:1V/div VO:0.5V/div MITSUMI Fast response / 150mA
Mitsumi
Original
MM3416 MM3416A15 MM3416A18 MM34 MM3416A19 MM3416A29 SC-82ABB

capacitor 10uF/63V

Abstract: capacitor 220uF/63V Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10us and , Avionics Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , power measured at the 10% point of the pulse with pulse width = 10usec, duty cycle = 10% and VDD = 50V , ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10us
HVVi Semiconductors
Original
capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x HVV0912-150 960MH 1215MH 429-HVV EG-01-DS11B
Abstract: (MHz) Epoxy Sealed Lid ï'­ Gross Leak Qualified P Vd=50V, Pulse = 10us-10%, Idq=10mA Ndâ , 10Âus, 10% pulse conditions this LDMOS FET device supplies a minimum of 15 watts of power at 960/1215 , , Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=10mA. 1.5 PIN(MAX) dB W VDD=50V, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=10mA. VDD=50V, PIN =0.8W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=10mA. 100% Power , =0.8W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=10mA. 100% Drain Current ID 1 2 A Integra Technologies
Original
ILD0912M15HV ILD0912M15HV-REV-NC-DS-REV-NC
Abstract: number ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10Âus, 10 , ) PI (W) 960 Pulse format = 10Âus, 10%, IDQ = 10mA Nd= Drain efficiency (including bias current , VDD=50V, PIN =8W, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, F2, F3, IDQ=10mA. W VDD=50V, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, F2, F3, IDQ=10Ma. VDD=50V, PIN =8W, Pulse=10Âus, 10%, TF , POUT 150 212.4 W VDD=50V, PIN =8W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, F2, F3, IDQ Integra Technologies
Original
ILD0912M15 ILD0912M150HV-REV-NC-DS-REV-NC
Abstract: 10Âus, 10% pulse conditions this LDMOS FET device supplies a minimum of 400 watts of power across the , =50V, PIN=50W, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. PIN(MAX) - 66 W VDD=50V, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=40mA. GP 9 11 dB POUT 400 629 W VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency Nâ'™d 45 % VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF Integra Technologies
Original
ILD0912M400HV 960-1215MH ILD0912M400HV-REV-NC-DS-REV-A

445-4109-2-ND

Abstract: 251R15S , 10us Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative , °C temperature with RF pulse conditions of pulse width = 10us and pulse period = 1ms. DESCRIPTION The high , Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10us Pulse, 1% Duty Cycle For Airborne , conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10usec, duty cycle , Transistor 1025-1150 MHz, 10us Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Typical
HVVi Semiconductors
Original
445-4109-2-ND 251R15S ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU HVV1012-250 1025MH 1150MH EG-01-DS09B

30 v 2200uF electrolytic capacitor

Abstract: capacitor 1000uf 10us/div V=25.2mV 20mV/div 10us/div Low-impedance aluminum electrolytic capacitor 1000uF/10WV Fig 3 25°C Fig 4 CH2=20mV V=21.6mV 10us/div CH2=20mV V=84.8mV 20mV/div 10us/div 25°C Fig 6 CH2=20mV V=24.4mV 10us/div 10us/div 20mV/div 10us/div -20°C V=29.6mV 59 f =100kHz f =100kHz CH2=20mV 20mV/div 10us/div 20mV/div 10us/div -20°C Low-ESR Tantalum capacitor 100uF/10WV Fig 5 10us/div CH2=20mV 10us/div 20mV/div 10us/div
SANYO Electronic Components
Original
20SV22M 30 v 2200uF electrolytic capacitor capacitor 1000uf 25 v 1000uF capacitor 25 v 1000uF electrolytic capacitor of capacitor 1000uf Power supply capacitor 2200uf F/20WV F/10WV

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET Transistor 1025-1150 MHz, 10Âus Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , 1025-1150 MHz, 10Âus Pulse, 1% Duty ! For Airborne DME Applications ! ! ! PULSE CHARACTERISTICS ! , % point of the pulse with pulse width = 10Âusec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a , -550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10Âus Pulse, 1% Duty , pulse conditions of 10Âus pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was
Advanced Semiconductor
Original
AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 HVV1012-550 HVV1012-550-EK FXT000116 3-252510RS3411 P242393 SCAS-0440-08C
Abstract: 1025-1150MHz. Operating at 10Âus, 1% pulse conditions this LDMOS FET device supplies a minimum of 550 watts , =13W, Pulse=10Âus, 1%, TF=25±5°C, F=F1, IDQ=40mA. 17 W VDD=50V, Pulse=10Âus, 1%, TF=25±5°C, F=F1, IDQ=40mA. VDD=50V, PIN=13W, Pulse=10Âus, 1%, TF=25±5ºC, F=F1, IDQ=40mA. GP 15.85 17.85 dB POUT 500 792 W VDD=50V, PIN=13W, Pulse=10Âus, 1%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency Nâ'™d 45 % VDD=50V, PIN=13W, Pulse=10Âus, 1%, TF=25±5°C, F=F1, IDQ=40mA. 100% Pulse Integra Technologies
Original
ILD1012S500HV 1025-1150MH ILD1012S500HV-REV-PR1-DS-REV-NC

I3124

Abstract: THBT200S /20us 0.5/700us 0.2/310us 2/10us 2/10us 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2/10us 2/10us 10/1000us 10/1000us 7 GND GND 3 COMPLIES WITH THE FOLLOWING STANDARDS , Parameter Value 10/1000us 5/310us 2/10us ITSM Non repetitive surge peak on-state current F = 50 , Maximum lead temperature for soldering during 10s % I PP Note 1 : Pulse waveform : 10/1000us tr=10us 5/310us tr=5us 2/10us tr=2us tp=1000us tp=310us tp=10us 100 50 0 tr t tp
STMicroelectronics
Original
THDT6511D I3124 THBT200S TR-NWT-001089 DT651D
Abstract: Avionics Pulsed Power Transistor 960-1215 MHz, 10Âus Pulse, 10% Duty Cycle ! For Ground and Air DME , pulse with pulse width = 10Âusec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched , igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10Âus Pulse, 10 , Class AB mode of operation and RF pulse conditions of 10Âus pulse width and 10% duty cycle with VDD = , under Class AB mode of operation and RF pulse conditions of 10Âus pulse width and 10% duty cycle with Advanced Semiconductor
Original
V0912-150 21DD1E 1215H 1088MH EG-01-DS11C
Abstract: to 20MHz Bandwidth ) ( 0 to 20MHz Bandwidth ) Vin=24V/48V, Io=2.5A, Ta=25°C Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us 3.23 Min Typ 10 2.55 3.3 3.37 0.2 1 Max , ) ( 0 to 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us 4.95 Min Typ 10 2 5 5.05 0.2 0.5 Max Units W A Vdc %Vo %Vo Vin , 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di Astec Industry
Original
REV02 AEE-24S/48S GR1089 AEE01L24/L48 TR-NWT-000332

GROUND BASED RADAR

Abstract: AIRBORNE DME % HVV0912-150 0.130 10uS 10% HVV0912-450 0.050 10uS 10% HVV0912-800 TBD 10uS 10% HVV1011-035 1.500 50uS 5% HVV1011-075L 0.280 32uS on 10uS off x 48 repeat every 24ms HVV1011-180L 0.140 32uS on 10uS off x 48 repeat every 24ms HVV1011-300 0.140 50uS 5% HVV1011-500L 0.180 32uS on 10uS off x 48 repeat every 24ms HVV1011-600 0.075 50uS 5% HVV1011-1000L 0.090 32uS on 10uS off x 48 repeat every 24ms HVV1012-060 0.280 10uS 1
Advanced Semiconductor
Original
GROUND BASED RADAR vimostm 1214-1400MH
Abstract: ILD0912M60 is designed for the frequency band 960-1215 MHz. Operating at 10us/10% TACAN pulse conditions , VDS=30V, IDQ=550mA, TF=25±5ï'°C, POUT=60W, 10us/10%. Screen 'BD' = parameter qualified By Design , 1.69 100% Power Gain Gp 15.5 18 dB Vd=30V, POUT = 60W, 10us, 10%, Idq=550mA, TF=25ï'±5ï'°C, F=F1, F2, F3. 100% Drain Efficiency Nd 42 75 % Vd=30V, POUT = 60W, 10us, 10%, Idq , =30V, POUT = 60W, 10us, 10%, Idq=550mA, TF=25ï'±5ï'°C, F=F1, F2, F3, Rotate 3:1 output VSWR through 360ï Integra Technologies
Original
ILD0912M60-REV-NC-DS-REV-A

cp151d

Abstract: I3124 /50us 1/20us 0.5/700us 0.2/310us 2/10us 2/10us VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 2/10us 2/10us (*) with series resistors or PTC. February 1998 Ed: 3 , Unit IPP Peak pulse current (see note 1) 10/1000us 5/310us 2/10us 30 38 170 A , soldering during 10s Note 1 : Pulse waveform : 10/1000us tr=10us 5/310us tr=5us 2/10us tr=2us tp=1000us tp=310us tp=10us % I PP 100 50 0 tr t tp THERMAL RESISTANCE Symbol Rth (j-a
STMicroelectronics
Original
LCP1511D cp151d

TO 48 ASYMMETRICAL THYRISTOR

Abstract: ptc resistor 300 to 500 e /700us 5/310us 1.2/50us 1/20us 0.5/700us 0.2/310us 2/10us 2/10us 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) BELLCORE TR-NWT-001089 : 2/10us 2/10us 10/1000us 10/1000us 7 GND , Value 10/1000us 5/310us 2/10us ITSM Non repetitive surge peak on-state current F = 50 Hz , temperature for soldering during 10s % I PP Note 1 : Pulse waveform : 10/1000us tr=10us 5/310us tr=5us 2/10us tr=2us tp=1000us tp=310us tp=10us 100 50 0 tr t tp THERMAL
STMicroelectronics
Original
TO 48 ASYMMETRICAL THYRISTOR ptc resistor 300 to 500 e

DT651D

Abstract: I3124 TR-NWT-001089 : 10/700us 5/310us 10/700us 5/310us 1.2/50us 1/20us 0.5/700us 0.2/310us 2/10us 2/10us 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2/10us 2/10us 10/1000us 10 , THDT6511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value 10/1000us 5/310us 2/10us , ) % I PP Note 1 : Pulse waveform : 10/1000us tr =10us 5/310us tr =5us 2/10us tr =2us tp=1000us tp=310us tp=10us 100 50 0 tr t tp THERMAL RESISTANCES Symbol Rth (j-a
STMicroelectronics
Original
marking code sgs sgs Thomson Thyristor 210us

CP151D

Abstract: I3124 /50us 1/20us 0.5/700us 0.2/310us 2/10us 2/10us VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 2/10us 2/10us (*) with series resistors or PTC. February 1998 Ed: 3 , Unit IPP Peak pulse current (see note 1) 10/1000us 5/310us 2/10us 30 38 170 A , soldering during 10s Note 1 : Pulse waveform : 10/1000us tr=10us 5/310us tr=5us 2/10us tr=2us % I PP tp=1000us tp=310us tp=10us 100 50 0 tr t tp THERMAL RESISTANCE Symbol
STMicroelectronics
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VTE1291-2

Abstract: VTE1063 Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10us and , Avionics Pulsed Power Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10us , . width and 10%performancewith VDD = 50V and IDQ = 100mA. The pulse conditions of 10us pulse width and 10
PerkinElmer Optoelectronics
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VTE1063 VTE1291-2 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE7172 VTE7173
Abstract: factor (NAF) is included in the VLIMIT equation for the 10-Âus delay setting. This value is equal to 500 , , VLIMIT, is shown. This calculation is based on the 10-Âus delay setting so the NAF term is included in , (VLIMIT + 500 ÂuV) / 20 ÂuA NAF is used with the 10-Âus delay setting. NAF can be omitted in the RLIMIT , RLIMIT at the 10-Âus delay setting. Removing NAF from the VLIMIT and RLIMIT calculation at the 10-Âus , in the VSOURCE equation for the 10-Âus delay setting. This value is equal to 500 ÂuV and is used to OSI Laser Diode
Original
MCW833M-XXR MCW563S-XXR MCW353S-XXR MCW563S MCW353S
Abstract: Low for >10us after min 50us of EN DIR = Low for >10us after min 10us DIR = High after min , DIR = Low for >10us after min 50us of EN DIR = High Figure 4. after 50us of EN DIR = High Alternative 2: for >50us for >10us after min 10us DIR = Low after min 50us of EN Proposed Sequence to Initialize L9903 after VS is applied VS should be >7V before EN=HI VS >50us EN >10us >10us PWM , willb be switched-on (Sx forced o GND) for at least 10us (Cboot=100nF) to allow boostrap capacitor to Texas Instruments
Original
INA300 SBOS613A ISO/TS16949
Abstract: factor (NAF) is included in the VLIMIT equation for the 10-Âus delay setting. This value is equal to 500 , , VLIMIT, is shown. This calculation is based on the 10-Âus delay setting so the NAF term is included in , (VLIMIT + 500 ÂuV) / 20 ÂuA NAF is used with the 10-Âus delay setting. NAF can be omitted in the RLIMIT , RLIMIT at the 10-Âus delay setting. Removing NAF from the VLIMIT and RLIMIT calculation at the 10-Âus , in the VSOURCE equation for the 10-Âus delay setting. This value is equal to 500 ÂuV and is used to Texas Instruments
Original
Abstract: :50mA IO:50mA 100mA 10us/div IO:50mA/div 150mA 10us/div 35mV IO:50mA/div 70mV VO:50mV/div VO:50mV/div IO:0.1mA IO:0.1mA 50mA 10us/div IO:50mA/div 150mA 10us/div IO:100mA/div 115mV 65mV VO:100mV/div VO:50mV/div Input rise characteristics (VDD=0V 2.0V,VCE=VDD,IO=50mA) 10us/div VDD:1V/div VO:0.5V/div CE rise characteristics (VDD=2.0V,VCE=0V VDD,IO=50mA) 10us/div VCE:1V/div VO:0.5V/div MITSUMI Fast response / 150mA OSI Laser Diode
Original
TCW6353S-XXR TCW6833M-XXR TCW6833M TCW6353S

DBK11A

Abstract: Daq 216b ) SPECTRUM 50 PW = 10us Duty = 1% 40 TC = 25°C 30 60°C 20 10 0 100 400 300
Iotech
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DBK11A CA-134 Daq 216b Daq PC-Cards 216B DAS-16 DBK40
Abstract: TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified) 160 PW = 10us Duty = 1% 140 Texas Instruments
Original

NX7529BB-AA

Abstract: Laser FP 1550 mW 10Âus, 10% pulse conditions this LDMOS FET device supplies a minimum of 400 watts of power across the , =50V, PIN=50W, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. PIN(MAX) - 66 W VDD=50V, Pulse=10Âus, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=40mA. GP 9 11 dB POUT 400 629 W VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency Nâ'™d 45 % VDD=50V, PIN=50W, Pulse=10Âus, 10%, TF
California Eastern Laboratories
Original
NX7529BB-AA Laser FP 1550 mW

NX7526BF-AA

Abstract: Fabry-Perot 1550 nm : 10/1000us tr=10us tp=1000us 5/310us tr=5us tp=310us 2/10us tr=2us tp=10us THERMAL
California Eastern Laboratories
Original
NX7526BF-AA Fabry-Perot 1550 nm

NDL7503P

Abstract: NDL7503P1 to 20MHz Bandwidth ) ( 0 to 20MHz Bandwidth ) Vin=24V/48V, Io=2.5A, Ta=25°C Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us 3.23 Min Typ 10 2.55 3.3 3.37 0.2 1 Max , ) ( 0 to 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us 4.95 Min Typ 10 2 5 5.05 0.2 0.5 Max Units W A Vdc %Vo %Vo Vin , 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10us Ta=25°C, di/dt=1A/10us Ta=25°C, di
NEC
Original
NDL7503P NDL7503P1 NDL7503P1C NDL7503P1D NDL7503PC NDL7503PD SM-9/125
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