500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
10USC15000MEFC22X30 Rubycon Corporation CAP ALUM 15000UF 20% 10V SNAP visit Digikey Buy
10USC18000MEFC20X40 Rubycon Corporation CAP ALUM 18000UF 20% 10V SNAP visit Digikey Buy
10USC15000MEFC20X35 Rubycon Corporation CAP ALUM 15000UF 20% 10V SNAP visit Digikey Buy
10USC47000MEFC35X35 Rubycon Corporation CAP ALUM 47000UF 20% 10V SNAP visit Digikey Buy
10USC10000MEFC20X25 Rubycon Corporation CAP ALUM 10000UF 20% 10V SNAP visit Digikey Buy
10USC18000MEFC25X30 Rubycon Corporation CAP ALUM 18000UF 20% 10V SNAP visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 1N6110US Supplier : Semtech Manufacturer : Avnet Stock : - Best Price : $9.6868 Price Each : $10.5790
Part : 1N6110USJAN Supplier : Semtech Manufacturer : Avnet Stock : - Best Price : $11.0843 Price Each : $12.1053
Part : 1N6110USJANTX Supplier : Semtech Manufacturer : Avnet Stock : - Best Price : $12.0580 Price Each : $13.00
Part : 1N6110USJANTXV Supplier : Semtech Manufacturer : Avnet Stock : - Best Price : $15.0725 Price Each : $16.25
Part : 204-10USOC/S530-A6 Supplier : Everlight Electronics Manufacturer : Avnet Stock : - Best Price : €0.0515 Price Each : €0.0520
Part : A-727210USSLP Supplier : Pentair Equipment Protection - Hoffman Manufacturer : Newark element14 Stock : 1 Best Price : $10,491.8090 Price Each : $11,756.7803
Part : AY1510-US Supplier : Panasonic Electronic Components Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BI10U-S30-AP6X7MSPLICED Supplier : TURCK Manufacturer : Newark element14 Stock : - Best Price : $115.00 Price Each : $115.00
Part : DA4-110US Supplier : Artesyn Embedded Technologies Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : DNR10US24 Supplier : XP Power Manufacturer : Newark element14 Stock : - Best Price : $19.00 Price Each : $23.50
Part : BT210 USB Supplier : Amped RF Wireless Technology (RETIRED) Manufacturer : Future Electronics Stock : - Best Price : $39.00 Price Each : $39.00
Part : DS-510(US) Supplier : Silex Technology Manufacturer : Future Electronics Stock : 20 Best Price : $100.00 Price Each : $100.00
Part : HT-110USD Supplier : Inolux Manufacturer : Future Electronics Stock : - Best Price : $0.0518 Price Each : $0.0551
Part : HT-210USD/NB Supplier : Inolux Manufacturer : Future Electronics Stock : - Best Price : $0.1490 Price Each : $0.15
Part : HT-210USD/UYG Supplier : Inolux Manufacturer : Future Electronics Stock : - Best Price : $0.1160 Price Each : $0.1190
Part : FMS6G10US60 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 23 Best Price : $17.04 Price Each : $20.98
Part : LMX2310USLDX Supplier : National Semiconductor Manufacturer : Rochester Electronics Stock : 13,508 Best Price : $1.57 Price Each : $1.94
Part : LMX2310USLDX/E7001517 Supplier : National Semiconductor Manufacturer : Rochester Electronics Stock : 70,000 Best Price : - Price Each : -
Part : LMX2310USLDX/NOPB Supplier : National Semiconductor Manufacturer : Rochester Electronics Stock : 2,019 Best Price : $1.57 Price Each : $1.94
Part : SYSMAC-STUDIO-10USER Supplier : OMRON Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : SYSMAC-STUDIO-10USER Supplier : OMRON Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : HT-110USD Supplier : Harvatek Manufacturer : America II Electronics Stock : 108,000 Best Price : - Price Each : -
Part : LMX2310USLDX Supplier : National Semiconductor Manufacturer : Bristol Electronics Stock : 2,425 Best Price : $1.1021 Price Each : $2.6880
Part : ECE10US03 Supplier : XP Power Manufacturer : RS Components Stock : 4 Best Price : £15.83 Price Each : £19.7900
Part : ECE10US05 Supplier : XP Power Manufacturer : RS Components Stock : 210 Best Price : £15.83 Price Each : £19.7900
Part : ECE10US12 Supplier : XP Power Manufacturer : RS Components Stock : 266 Best Price : £15.83 Price Each : £19.7900
Part : ECE10US15 Supplier : XP Power Manufacturer : RS Components Stock : 14 Best Price : £15.83 Price Each : £19.7900
Part : ECE10US24 Supplier : XP Power Manufacturer : RS Components Stock : 17 Best Price : £15.83 Price Each : £19.7900
Part : JANS1N6310US Supplier : Microsemi Manufacturer : NexGen Digital Stock : 255 Best Price : - Price Each : -
Part : JANTX1N6310USMSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 362 Best Price : - Price Each : -
Part : G6A234PST10USDC12 Supplier : OMRON Manufacturer : Power and Signal Stock : - Best Price : - Price Each : -
Part : G6A234PST10USDC24 Supplier : OMRON Manufacturer : Power and Signal Stock : - Best Price : - Price Each : -
Part : G6A234PST10USDC48 Supplier : OMRON Manufacturer : Power and Signal Stock : - Best Price : - Price Each : -
Part : G6A234PST10USDC9 Supplier : OMRON Manufacturer : Power and Signal Stock : - Best Price : - Price Each : -
Part : G6A274PST10USDC12 Supplier : OMRON Manufacturer : Power and Signal Stock : - Best Price : - Price Each : -
Part : AT93C66A-10-US- Supplier : - Manufacturer : Chip One Exchange Stock : 158 Best Price : - Price Each : -
Part : AT93C66A-10US-1.8 Supplier : - Manufacturer : Chip One Exchange Stock : 188 Best Price : - Price Each : -
Part : G6A-274P-ST10-US-DC48 Supplier : OMRON Manufacturer : Chip1Stop Stock : 5 Best Price : $6.77 Price Each : $6.78
Part : JANTX1N6310US Supplier : Microsemi Manufacturer : Chip1Stop Stock : 273 Best Price : $74.1700 Price Each : $91.7000
Part : DNR10US05 Supplier : XP Power Manufacturer : element14 Asia-Pacific Stock : 146 Best Price : $24.48 Price Each : $28.9760
Part : DNR10US12 Supplier : XP Power Manufacturer : element14 Asia-Pacific Stock : 29 Best Price : $24.48 Price Each : $28.9760
Part : DNR10US24 Supplier : XP Power Manufacturer : element14 Asia-Pacific Stock : - Best Price : $24.48 Price Each : $28.9760
Part : ECE10US03 Supplier : XP Power Manufacturer : element14 Asia-Pacific Stock : - Best Price : $26.29 Price Each : $32.8720
Part : ECE10US05 Supplier : XP Power Manufacturer : element14 Asia-Pacific Stock : 8 Best Price : $23.64 Price Each : $26.3920
Part : DNR10US05 Supplier : XP Power Manufacturer : Farnell element14 Stock : 135 Best Price : £17.31 Price Each : £20.72
Part : DNR10US12 Supplier : XP Power Manufacturer : Farnell element14 Stock : 76 Best Price : £16.90 Price Each : £20.25
Part : DNR10US24 Supplier : XP Power Manufacturer : Farnell element14 Stock : - Best Price : £17.06 Price Each : £20.41
Part : ECE10US05 Supplier : XP Power Manufacturer : Farnell element14 Stock : 23 Best Price : £15.82 Price Each : £16.83
Part : ECE10US09 Supplier : XP Power Manufacturer : Farnell element14 Stock : 4 Best Price : £15.82 Price Each : £16.83
Part : AYT1510-US Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 5 Best Price : $34.55 Price Each : $49.00
Part : G6A-274P-ST10-US-DC48 Supplier : OMRON Manufacturer : Master Electronics Stock : 249 Best Price : $4.35 Price Each : $6.17
Part : LC1N-10-US-DC12 Supplier : OMRON Manufacturer : Master Electronics Stock : 18 Best Price : $15.36 Price Each : $15.36
Part : S3SB10USAC120240 Supplier : OMRON Manufacturer : Master Electronics Stock : 1 Best Price : $538.17 Price Each : $538.17
Part : S3SP10USAC120240 Supplier : OMRON Manufacturer : Master Electronics Stock : 3 Best Price : - Price Each : -
Part : DS-510(US) Supplier : Silex Technology Manufacturer : New Advantage Stock : 18 Best Price : $111.12 Price Each : $111.12
Part : G6A-234P-ST10-US-DC48 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : G6A-234P-ST10-USDC12 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : G6A-234P-ST10-USDC24 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : G6A-234P-ST10-USDC9 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : G6A-274P-ST10-US-DC24 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : 0443010 - USLKG 16 Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 1,339 Best Price : - Price Each : -
Part : 0828910 - US-EMLP (100X60) SR Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 1,582 Best Price : - Price Each : -
Part : 3070310 - USST 6-T/SB Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 1,599 Best Price : - Price Each : -
Part : MTR-H5-B10-US Supplier : Multi-Tech Systems Manufacturer : Symmetry Electronics Stock : - Best Price : $400.13 Price Each : $400.13
Shipping cost not included. Currency conversions are estimated. 

10us Datasheet

Part Manufacturer Description PDF Type
10USC10000M20X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC12000M20X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC12000M22X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC15000M20X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC15000M22X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC15000M25X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC18000M20X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC18000M22X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC18000M25X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC22000M22X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC22000M25X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC22000M30X25 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC27000M22X45 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC27000M25X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC27000M30X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC33000M22X50 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC33000M25X40 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC33000M30X30 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC39000M25X45 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
10USC39000M30X35 Rubycon Large Can Type Aluminum Electrolytic Capacitor Original
Showing first 20 results.

10us

Catalog Datasheet MFG & Type PDF Document Tags

CAN TRANSCEIVER SOT23 package

Abstract: amplifier 400W 2/10µs 10/1000µs 2/10µs 2/10µs 10/700µs 1/60ns 10/700µs 1.2/50µs 10/700µs 1.2/50µs 10/160µs 10/560µs 9/720µs Required peak current (A) Current waveform 500 2/10µs 100 10/1000µs 500 2/10µs 100 2/10µs 150 5/310µs 37.5 ESD contact discharge ESD air discharge 100 5 , capability 500A (2/10µs) 500A (2/10µs) 500A (2/10µs) 500A (2/10µs) 100A (10/560µs) 35A (10/560µs , ) 200A (2/10µs) Secondary protection (4 lines protection) IEC61000-4-2 Level 4 MIL STD 883E, Method
STMicroelectronics
Original
GR-1089 TPA270 CAN TRANSCEIVER SOT23 package amplifier 400W SMPTPA TRISIL SMP Mil-Std-883E PTC 150M K20/K21 SMP100LC-270 SMPTPA270 SMP50-270

l9903

Abstract: L9903 application Low for >10µs after min 50µs of EN DIR = Low for >10µs after min 10µs DIR = High after min , DIR = Low for >10µs after min 50µs of EN DIR = High Figure 4. after 50µs of EN DIR = High Alternative 2: for >50µs for >10µs after min 10µs DIR = Low after min 50µs of EN Proposed Sequence to Initialize L9903 after VS is applied VS should be >7V before EN=HI VS >50us EN >10us >10us PWM , willb be switched-on (Sx forced o GND) for at least 10µs (Cboot=100nF) to allow boostrap capacitor to
STMicroelectronics
Original
AN2229 L9904 L9903 application ST L9904 L9903/L9904 AN2229/10-05

MM3416A15

Abstract: MM3416 :50mA IO:50mA 100mA 10µs/div IO:50mA/div 150mA 10µs/div 35mV IO:50mA/div 70mV VO:50mV/div VO:50mV/div IO:0.1mA IO:0.1mA 50mA 10µs/div IO:50mA/div 150mA 10µs/div IO:100mA/div 115mV 65mV VO:100mV/div VO:50mV/div Input rise characteristics (VDD=0V 2.0V,VCE=VDD,IO=50mA) 10µs/div VDD:1V/div VO:0.5V/div CE rise characteristics (VDD=2.0V,VCE=0V VDD,IO=50mA) 10µs/div VCE:1V/div VO:0.5V/div MITSUMI Fast response / 150mA
Mitsumi
Original
MM3416 MM3416A15 MM3416A18 MM34 MM3416A19 MM3416A29 SC-82ABB

capacitor 10uF/63V

Abstract: capacitor 220uF/63V Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10µs and , Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 10% and VDD = 50V , ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs
HVVi Semiconductors
Original
capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x HVV0912-150 960MH 1215MH 429-HVV EG-01-DS11B
Abstract: (MHz) Epoxy Sealed Lid ï'­ Gross Leak Qualified P Vd=50V, Pulse = 10us-10%, Idq=10mA Ndâ , 10µs, 10% pulse conditions this LDMOS FET device supplies a minimum of 15 watts of power at 960/1215 , , Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=10mA. 1.5 PIN(MAX) dB W VDD=50V, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=10mA. VDD=50V, PIN =0.8W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, IDQ=10mA. 100% Power , =0.8W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, IDQ=10mA. 100% Drain Current ID 1 2 A Integra Technologies
Original
ILD0912M15HV ILD0912M15HV-REV-NC-DS-REV-NC
Abstract: number ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10µs, 10 , ) PI (W) 960 Pulse format = 10µs, 10%, IDQ = 10mA Nd= Drain efficiency (including bias current , VDD=50V, PIN =8W, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, F2, F3, IDQ=10mA. W VDD=50V, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, F2, F3, IDQ=10Ma. VDD=50V, PIN =8W, Pulse=10µs, 10%, TF , POUT 150 212.4 W VDD=50V, PIN =8W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, F2, F3, IDQ Integra Technologies
Original
ILD0912M15 ILD0912M150HV-REV-NC-DS-REV-NC
Abstract: 10µs, 10% pulse conditions this LDMOS FET device supplies a minimum of 400 watts of power across the , =50V, PIN=50W, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. PIN(MAX) - 66 W VDD=50V, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. VDD=50V, PIN=50W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, IDQ=40mA. GP 9 11 dB POUT 400 629 W VDD=50V, PIN=50W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency Nâ'™d 45 % VDD=50V, PIN=50W, Pulse=10µs, 10%, TF Integra Technologies
Original
ILD0912M400HV 960-1215MH ILD0912M400HV-REV-NC-DS-REV-A

445-4109-2-ND

Abstract: 251R15S , 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative , °C temperature with RF pulse conditions of pulse width = 10µs and pulse period = 1ms. DESCRIPTION The high , Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne , conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle , Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Typical
HVVi Semiconductors
Original
445-4109-2-ND 251R15S ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU HVV1012-250 1025MH 1150MH EG-01-DS09B

30 v 2200uF electrolytic capacitor

Abstract: capacitor 1000uf 10us/div V=25.2mV 20mV/div 10µs/div Low-impedance aluminum electrolytic capacitor 1000µF/10WV Fig 3 25°C Fig 4 CH2=20mV V=21.6mV 10us/div CH2=20mV V=84.8mV 20mV/div 10µs/div 25°C Fig 6 CH2=20mV V=24.4mV 10us/div 10us/div 20mV/div 10µs/div -20°C V=29.6mV 59 f =100kHz f =100kHz CH2=20mV 20mV/div 10µs/div 20mV/div 10µs/div -20°C Low-ESR Tantalum capacitor 100µF/10WV Fig 5 10us/div CH2=20mV 10us/div 20mV/div 10µs/div
SANYO Electronic Components
Original
20SV22M 30 v 2200uF electrolytic capacitor capacitor 1000uf 25 v 1000uF capacitor 25 v 1000uF electrolytic capacitor of capacitor 1000uf Power supply capacitor 2200uf F/20WV

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! PULSE CHARACTERISTICS ! , % point of the pulse with pulse width = 10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a , -550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty , pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was
Advanced Semiconductor
Original
AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 HVV1012-550 HVV1012-550-EK FXT000116 3-252510RS3411 P242393 SCAS-0440-08C
Abstract: 1025-1150MHz. Operating at 10µs, 1% pulse conditions this LDMOS FET device supplies a minimum of 550 watts , =13W, Pulse=10µs, 1%, TF=25±5°C, F=F1, IDQ=40mA. 17 W VDD=50V, Pulse=10µs, 1%, TF=25±5°C, F=F1, IDQ=40mA. VDD=50V, PIN=13W, Pulse=10µs, 1%, TF=25±5ºC, F=F1, IDQ=40mA. GP 15.85 17.85 dB POUT 500 792 W VDD=50V, PIN=13W, Pulse=10µs, 1%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency Nâ'™d 45 % VDD=50V, PIN=13W, Pulse=10µs, 1%, TF=25±5°C, F=F1, IDQ=40mA. 100% Pulse Integra Technologies
Original
ILD1012S500HV 1025-1150MH ILD1012S500HV-REV-PR1-DS-REV-NC

I3124

Abstract: THBT200S /20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2/10µs 2/10µs 10/1000µs 10/1000µs 7 GND GND 3 COMPLIES WITH THE FOLLOWING STANDARDS , Parameter Value 10/1000µs 5/310µs 2/10µs ITSM Non repetitive surge peak on-state current F = 50 , Maximum lead temperature for soldering during 10s % I PP Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp
STMicroelectronics
Original
THDT6511D I3124 THBT200S TR-NWT-001089 DT651D
Abstract: Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle ! For Ground and Air DME , pulse with pulse width = 10µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched , igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10 , Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = , under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with Advanced Semiconductor
Original
V0912-150 21DD1E 1215H 1088MH EG-01-DS11C
Abstract: to 20MHz Bandwidth ) ( 0 to 20MHz Bandwidth ) Vin=24V/48V, Io=2.5A, Ta=25°C Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs 3.23 Min Typ 10 2.55 3.3 3.37 0.2 1 Max , ) ( 0 to 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs 4.95 Min Typ 10 2 5 5.05 0.2 0.5 Max Units W A Vdc %Vo %Vo Vin , 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di Astec Industry
Original
REV02 AEE-24S/48S GR1089 AEE01L24/L48 TR-NWT-000332

GROUND BASED RADAR

Abstract: AIRBORNE DME % HVV0912-150 0.130 10uS 10% HVV0912-450 0.050 10uS 10% HVV0912-800 TBD 10uS 10% HVV1011-035 1.500 50uS 5% HVV1011-075L 0.280 32uS on 10uS off x 48 repeat every 24ms HVV1011-180L 0.140 32uS on 10uS off x 48 repeat every 24ms HVV1011-300 0.140 50uS 5% HVV1011-500L 0.180 32uS on 10uS off x 48 repeat every 24ms HVV1011-600 0.075 50uS 5% HVV1011-1000L 0.090 32uS on 10uS off x 48 repeat every 24ms HVV1012-060 0.280 10uS 1
Advanced Semiconductor
Original
GROUND BASED RADAR vimostm 1214-1400MH
Abstract: ILD0912M60 is designed for the frequency band 960-1215 MHz. Operating at 10us/10% TACAN pulse conditions , VDS=30V, IDQ=550mA, TF=25±5ï'°C, POUT=60W, 10us/10%. Screen 'BD' = parameter qualified By Design , 1.69 100% Power Gain Gp 15.5 18 dB Vd=30V, POUT = 60W, 10us, 10%, Idq=550mA, TF=25ï'±5ï'°C, F=F1, F2, F3. 100% Drain Efficiency Nd 42 75 % Vd=30V, POUT = 60W, 10us, 10%, Idq , =30V, POUT = 60W, 10us, 10%, Idq=550mA, TF=25ï'±5ï'°C, F=F1, F2, F3, Rotate 3:1 output VSWR through 360ï Integra Technologies
Original
ILD0912M60-REV-NC-DS-REV-A

cp151d

Abstract: I3124 /50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 2/10µs 2/10µs (*) with series resistors or PTC. February 1998 Ed: 3 , Unit IPP Peak pulse current (see note 1) 10/1000µs 5/310µs 2/10µs 30 38 170 A , soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr t tp THERMAL RESISTANCE Symbol Rth (j-a
STMicroelectronics
Original
LCP1511D cp151d

TO 48 ASYMMETRICAL THYRISTOR

Abstract: ptc resistor 300 to 500 e /700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) BELLCORE TR-NWT-001089 : 2/10µs 2/10µs 10/1000µs 10/1000µs 7 GND , Value 10/1000µs 5/310µs 2/10µs ITSM Non repetitive surge peak on-state current F = 50 Hz , temperature for soldering during 10s % I PP Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp THERMAL
STMicroelectronics
Original
TO 48 ASYMMETRICAL THYRISTOR ptc resistor 300 to 500 e

DT651D

Abstract: I3124 TR-NWT-001089 : 10/700µs 5/310µs 10/700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2/10µs 2/10µs 10/1000µs 10 , THDT6511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value 10/1000µs 5/310µs 2/10µs , ) % I PP Note 1 : Pulse waveform : 10/1000µs tr =10µs 5/310µs tr =5µs 2/10µs tr =2µs tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp THERMAL RESISTANCES Symbol Rth (j-a
STMicroelectronics
Original
marking code sgs sgs Thomson Thyristor 210us

CP151D

Abstract: I3124 /50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 2/10µs 2/10µs (*) with series resistors or PTC. February 1998 Ed: 3 , Unit IPP Peak pulse current (see note 1) 10/1000µs 5/310µs 2/10µs 30 38 170 A , soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs % I PP tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp THERMAL RESISTANCE Symbol
STMicroelectronics
Original

VTE1291-2

Abstract: VTE1063 Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10µs and , Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs , . width and 10%performancewith VDD = 50V and IDQ = 100mA. The pulse conditions of 10µs pulse width and 10
PerkinElmer Optoelectronics
Original
VTE1063 VTE1291-2 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE7172 VTE7173
Abstract: factor (NAF) is included in the VLIMIT equation for the 10-µs delay setting. This value is equal to 500 , , VLIMIT, is shown. This calculation is based on the 10-µs delay setting so the NAF term is included in , (VLIMIT + 500 µV) / 20 µA NAF is used with the 10-µs delay setting. NAF can be omitted in the RLIMIT , RLIMIT at the 10-µs delay setting. Removing NAF from the VLIMIT and RLIMIT calculation at the 10-µs , in the VSOURCE equation for the 10-µs delay setting. This value is equal to 500 µV and is used to OSI Laser Diode
Original
MCW833M-XXR MCW563S-XXR MCW353S-XXR MCW563S MCW353S
Abstract: Low for >10µs after min 50µs of EN DIR = Low for >10µs after min 10µs DIR = High after min , DIR = Low for >10µs after min 50µs of EN DIR = High Figure 4. after 50µs of EN DIR = High Alternative 2: for >50µs for >10µs after min 10µs DIR = Low after min 50µs of EN Proposed Sequence to Initialize L9903 after VS is applied VS should be >7V before EN=HI VS >50us EN >10us >10us PWM , willb be switched-on (Sx forced o GND) for at least 10µs (Cboot=100nF) to allow boostrap capacitor to Texas Instruments
Original
INA300 SBOS613A ISO/TS16949
Abstract: factor (NAF) is included in the VLIMIT equation for the 10-µs delay setting. This value is equal to 500 , , VLIMIT, is shown. This calculation is based on the 10-µs delay setting so the NAF term is included in , (VLIMIT + 500 µV) / 20 µA NAF is used with the 10-µs delay setting. NAF can be omitted in the RLIMIT , RLIMIT at the 10-µs delay setting. Removing NAF from the VLIMIT and RLIMIT calculation at the 10-µs , in the VSOURCE equation for the 10-µs delay setting. This value is equal to 500 µV and is used to Texas Instruments
Original
Abstract: :50mA IO:50mA 100mA 10µs/div IO:50mA/div 150mA 10µs/div 35mV IO:50mA/div 70mV VO:50mV/div VO:50mV/div IO:0.1mA IO:0.1mA 50mA 10µs/div IO:50mA/div 150mA 10µs/div IO:100mA/div 115mV 65mV VO:100mV/div VO:50mV/div Input rise characteristics (VDD=0V 2.0V,VCE=VDD,IO=50mA) 10µs/div VDD:1V/div VO:0.5V/div CE rise characteristics (VDD=2.0V,VCE=0V VDD,IO=50mA) 10µs/div VCE:1V/div VO:0.5V/div MITSUMI Fast response / 150mA OSI Laser Diode
Original
TCW6353S-XXR TCW6833M-XXR TCW6833M TCW6353S

DBK11A

Abstract: Daq 216b ) SPECTRUM 50 PW = 10µs Duty = 1% 40 TC = 25°C 30 60°C 20 10 0 100 400 300
Iotech
Original
DBK11A CA-134 Daq 216b Daq PC-Cards 216B DAS-16 DBK40
Abstract: TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified) 160 PW = 10µs Duty = 1% 140 Texas Instruments
Original

NX7529BB-AA

Abstract: Laser FP 1550 mW 10µs, 10% pulse conditions this LDMOS FET device supplies a minimum of 400 watts of power across the , =50V, PIN=50W, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. PIN(MAX) - 66 W VDD=50V, Pulse=10µs, 10%, TF=25ï'±5ï'°C, F=F1, IDQ=40mA. VDD=50V, PIN=50W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, IDQ=40mA. GP 9 11 dB POUT 400 629 W VDD=50V, PIN=50W, Pulse=10µs, 10%, TF=25±5ºC, F=F1, IDQ=40mA. Drain Efficiency Nâ'™d 45 % VDD=50V, PIN=50W, Pulse=10µs, 10%, TF
California Eastern Laboratories
Original
NX7529BB-AA Laser FP 1550 mW

NX7526BF-AA

Abstract: Fabry-Perot 1550 nm : 10/1000µs tr=10µs tp=1000µs 5/310µs tr=5µs tp=310µs 2/10µs tr=2µs tp=10µs THERMAL
California Eastern Laboratories
Original
NX7526BF-AA Fabry-Perot 1550 nm

NDL7503P

Abstract: NDL7503P1 to 20MHz Bandwidth ) ( 0 to 20MHz Bandwidth ) Vin=24V/48V, Io=2.5A, Ta=25°C Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs 3.23 Min Typ 10 2.55 3.3 3.37 0.2 1 Max , ) ( 0 to 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs 4.95 Min Typ 10 2 5 5.05 0.2 0.5 Max Units W A Vdc %Vo %Vo Vin , 20MHz Bandwidth ) Vin=24Vor48V, Io=2A, Ta=25°C Ta=25°C, di/dt=1A/10µs Ta=25°C, di/dt=1A/10µs Ta=25°C, di
NEC
Original
NDL7503P NDL7503P1 NDL7503P1C NDL7503P1D NDL7503PC NDL7503PD SM-9/125
Showing first 20 results.