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BPV10NF Atmel Corporation PIN Photodiode, PLASTIC, 2 PIN visit Digikey
STD10NF30 STMicroelectronics Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY(TM) Power MOSFET in a DPAK package visit Digikey
ADT-2810-NF-SMM-02 Cinch Connectivity Solutions RF Connector Adapter visit Digikey
71C361110NF-1110NF Grayhill Inc SWITCH ROTARY 10POS 250MA 115V visit Digikey
71CF36-3110NF-3110NF Grayhill Inc SWITCH ROTARY 10POS 250MA 115V visit Digikey
71CF362110NF-2110NF Grayhill Inc SWITCH ROTARY 10POS 250MA 115V visit Digikey

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10nF

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 10uF 47uF 10nF 22uF 47uF 27nF 22uF 100uF 47nF 100nF 2.2uF 1.0uF 10uF 3.3nF 10uF 22uF 10nF 10uF 22uF 10nF 22uF 47uF 22nF 10nF 1uF 1uF 10uF 4.7uF 22uF 10uF 22uF 22uF 22uF 10uF 2.2uF 10uF 10uF 2.2uF 820pF 1uF 4.7uF 3.3nF 10nF 10nF 22nF 47nF 100nF 100nF 1uF 1uF 680pF 2.2uF 4.7uF 6.8nF 4.7uF 10uF 12nF , 4.7uF 4.7uF 10uF 10uF 10uF 680pF 3.9nF 1uF 2.2uF 10nF 10nF 18nF 100nF Holy Stone Enterprise
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Abstract: 33nF 220pF - 100nF 470pF - 150nF 560pF - 220nF 330pF - 100nF 100pF - 330nF 680pF - 1.0ÂuF 1.0nF - 1.5ÂuF 25V C0G/NP0 390pF - 1.0nF X7R 1pF - 4.7nF 1pF - 15nF 2225 1210 1pF - 6.8nF , 56nF 100pF - 220nF 680pF - 820nF 1.0nF - 1.2ÂuF 3.9nF - 3.3ÂuF 10nF - 5.6ÂuF 18nF - 6.8ÂuF 220pF - 68nF 470pF - 100nF 560pF - 150nF 50/63V 100V 200/250V 500V 3.9nF - 2.2ÂuF 10nF - 4.7ÂuF 220pF - 39nF 470pF - 68nF 560pF - 100nF 330pF - 47nF 100pF - 220nF 680pF - 470nF 1.0nF - Syfer Technology
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Abstract: 100V 200V 500V 630V 1kV 0805 1206 1210 2.7nF 10nF 18nF 39nF X7R 33nF 150nF 330nF 680nF 1.5ÂuF C0G/NP0 330pF 1.8nF 6.8nF 12nF X7R 10nF 47nF , 330pF - 100nF 100pF - 330nF 680pF - 1.0ÂuF 1.0nF - 1.5ÂuF 3.9nF - 3.3ÂuF C0G/ NP0 390pF - 1.0nF 220pF - 68nF 470pF - 100nF 560pF - 150nF X7R 330pF - 56nF 100pF - 220nF 680pF - 820nF 1.0nF - 1.2ÂuF 3.9nF - 2.2ÂuF 10nF - 4.7ÂuF C0G/ NP0 0.5pF - 470pF 220pF - 39nF 470pF Syfer Technology
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AEC-Q200
Abstract: 5 4 3 VCC 24V C5 10nF Output2 POINT TP11 POINT TP10 POINT TP9 15 3 , Input 5 11 11 1k5 INPUT6 C8 10nF 37 U1 VCC INPUT2 Vbss 6V 1 2 3 4 5 6 7 8 9 10 C7 10nF 1 Input 6 Input 7 Input 8 Status 1 1 2 2 3 3 4 4 5 5 , Output5 Output2 C9 10nF Output3 Output4 CONN PLUG 10 Output6 Output5 OUTPUT & POWER , FUSE C6 10nF POINT POINT POINT POINT TP4 TP2 TP2 TP1 U2 TLP281-4 1 Output1 2k2 -
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VN808 SM15T36A TLP181 STEVAL-IFP003V1 tlp281 DC DC INPUT 24V OUTPUT 6V TLP281-4 24v 24V-1 tp35 L5970D INPUT16
Abstract: Y1 AA1 AA2 10nF 10nF 0402 0402 D1 E1 F1 F2 F5 G6 F4 F3 G1 G2 H1 H2 H7 H6 G3 , URC_SQ_VCCRX2 URC_SQ_VCCRX3 URC_SQ_VCCTX0 URC_SQ_VCCTX1 URC_SQ_VCCTX2 URC_SQ_VCCTX3 C179 C180 10nF 10nF , 100nF 0402 SPLL1 MACHXO_CLK0 MACHXO_CLK1 MACHXO_RESB MACHXO_SCL MACHXO_SDA C63 10nF 0402 , -7 DEBUGDIG2-0 DEBUGDIG2-1 DEBUGDIG2-2 C65 10nF 0402 C61 100nF 0402 1 0603 C66 10nF 0402 C67 10nF 0402 Place 1-100nF cap on device side near Ferrite Beads. Place other 100nF caps on Western Design Center
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PR63A PR65A PL05A PB03B PT05A pr64a PB64B PR09A PT47A PT47B PT48A PT48B PT49A PT49B
Abstract: 1 1V8 R152 0R C86 10nF VDDMPIO C268 1 2 100nF 1V8 AT91CAP9-STK Starter , : 3 1V2 2 2 1 1 J28 1X3PTS_MD_2MM54 VDDBU C101 10nF 1V2_SAVE The implementation of VDDANA and VREEP is shown below. C105 10nF C99 10nF 3 VIN VOUT 1 REF EN VREFP 5 2 1 1 1 C104 10uF_1210 2 C103 10nF 2 4,7uH 220mA 1 2 2 1 , 2 2 1V8 VCCIO7 1 1 R181 0R AB11 1 AB3 3V3 C256 10nF 2 R183 Atmel
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HE10 20PTS rj45 usb schema STK Stereo amplifier lcd panel schema stk power audio ics STK Stereo Audio amplifier
Abstract: 33nF 220pF - 100nF 470pF - 150nF 560pF - 220nF 330pF - 100nF 100pF - 330nF 680pF - 1.0uF 1.0nF - 1.5uF 25V C0G/NP0 390pF - 1.0nF X7R 1pF - 4.7nF 1pF - 15nF 2225 1210 1pF - 6.8nF , 56nF 100pF - 220nF 680pF - 820nF 1.0nF - 1.2uF 3.9nF - 3.3uF 10nF - 5.6uF 18nF - 6.8uF 220pF - 68nF 470pF - 100nF 560pF - 150nF 50/63V 100V 200/250V 500V 3.9nF - 2.2uF 10nF - 4.7uF 220pF - 39nF 470pF - 68nF 560nF - 100nF 330pF - 47nF 100pF - 220nF 680pF - 470nF 1.0nF - -
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390PF 100nF 10 50V X7R 0603 560pF 47nF 1210 200v 470nF 16V X7R 10 470nF
Abstract: crosspoint switch. 1.1 Block diagram L2 L2 VCC C2 VTT C2 SMA 10nF SMA 10nF 10nF 10nF L2 VCC C2 IBIN65 IBINQ65 VCCIe VTT0.3 IBIN35 IBINQ35 10nF IBIN66 , OBOQ4 to 64 10nF 51 VCCOy R OBO63 OBOQ63 OBOQ1 to 65 R L2 L2 VCCOy VCC C2 VCCOx VCC C2 TZA2080 switch 10nF 10nF OBO0 OBO67 SMA IBIN2 SMA OBO2 OBOQ2 IBINQ2 OBOQ67 OBOQ0 10nF 10nF VCCDx C LOACLK Resetn DS,Config A[7:0],D[7:0],CS,RW Philips Semiconductors
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r0402 Phycomp 2238 Phycomp C0402 Phycomp 2322 2238-787-15636 Resistors 2322 Phycomp OM5815 AN01020
Abstract: 47pF 10nF 82nF 0.1uF 10nF 0.1uF 10nF 0.1uF 10nF 0.1uF 10nF 0.1uF 10nF 33uF 33uF 0.1uF 10nF 220uF 220uF 33uF 0.1uF 0.1uF 0.1uF 1nF 0.1uF 0.1uF 0.1uF 33uF 10nF 120uF/6.3V 10nF 150uF/20V 10nF 10uF 10nF 33uF 33uF 0.1uF 0.1uF 10nF 0.1uF 150uF/20V 120uF/6.3V Tolerance , CAP Value 10nF 0.1uF 2.2nF 2.2nF 10nF 0.1uF 10nF 0.1uF 1uF 10nF 0.1uF 10nF 0.1uF 0.1uF 10nF 0.1uF 10nF 0.1uF 10nF 0.1uF 10nF 0.1uF 0.1uF 0.1uF 10nF 10nF 0.1uF 10nF 10nF Analog Devices
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LQFP-64* PCB diode c0402 ADV7181C EVAL-ADV7181CEB EVAL-ADV7181CLQEB
Abstract: L2 L2 R23 10K Ohm U1 NJM78L08/TO 1 OUT IN 3 C23 10nF C24 100nF R24 10K Ohm R17, R18 10K Ohm C7 10nF T1 34-50 C5 10nF L4 22AWG R7-R9 12 Ohm C31, C32 10uF C26 10nF C L5, L6 16AWG I.D 195mil 5 turns R20 10K Ohm C13 10nF C15 10nF R13 15 Ohm R15 100 Ohm C9 750pF T3a 70-10 R13 R5 18 Ohm 300 Ohm C19 10nF T4 85-50 , 100nF C27 100nF Q1 LQ801 2 J1 C1 SMA Female 10nF 1 R1, R2 10 Ohm R19 220 Ohm Polyfet RF Devices
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LB401 FT50A-43 C33-C38 R20 10K ohm 30MHz to 512MHz TB166 TB-166A LQ801--- 250MH 512MH TB166A
Abstract: 1 1V8 R152 0R C86 10nF VDDMPIO C268 1 2 100nF 1V8 AT91CAP9-STK Starter , : 3 1V2 2 2 1 1 J28 1X3PTS_MD_2MM54 VDDBU C101 10nF 1V2_SAVE The implementation of VDDANA and VREEP is shown below. C105 10nF C99 10nF 3 VIN VOUT 1 REF EN VREFP 5 2 1 1 1 C104 10uF_1210 2 C103 10nF 2 4,7uH 220mA 1 2 2 1 , 2 2 1V8 VCCIO7 1 1 R181 0R AB11 1 AB3 3V3 C256 10nF 2 R183 Atmel
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FPC-40 LCD connector rechargeable coin battery ml1220 AT73C224 rechargeable coin battery SCHEMA battery charger TX09D70VM1CCA 6351B
Abstract: 0 1 2 3 4 5 6 7 8 A A B B 7 C8 10nF D1 1N4002 D2 1N4002 C 1 C7 10nF C C1 2 100uF-SMT D4 1N4002 C11 10nF T1 D D3 1N4002 C6 10nF 3 D C12 430nF NLT_PQ_4_12 C2 100uF-SMT 4 D5 1N4002 C10 10nF D6 1N4002 E E 6 5 C9 10nF C5 10nF D7 1N4002 D8 1N4002 C4 10nF 0 F F C3 10nF G G 0 1 2 3 4 5 6 7 8 - -
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NLT_PQ_4_12 100uF 1N4002 diode download datasheet diode 1n4002 1N4002 diode smt 1n4002
Abstract: 0603J0500822KXT 10nF 0603J0500103KXT 0603J0500123KXT 0603J0500153KXT 0603J0500183KXT 0603J0500223KXT , 0805J0500682KXT 0805J0500822KXT Value 330pF 390pF 470pF 560pF 680pF 820pF 1.0nF 1.2nF 1.5nF 1.8nF 2.2nF 2.7nF 3.3nF 3.9nF 4.7nF 5.6nF 6.8nF 8.2nF 10nF 12nF 15nF 18nF* 22nF* 27nF* 33nF* SQP 0.025 0.025 0.025 0.025 , 0.027 0.027 0.029 0.029 0805 Part Number 10nF 0805J0500103KXT 0805J0500123KXT 0805J0500153KXT , 10nF 1206J0500103KXT 1206J0500123KXT 1206J0500153KXT 1206J0500183KXT 1206J0500223KXT 1206J0500273KXT -
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0805J0500681KXT 2220j0500473 1206J0500104KXT 0805J0500332KXT 2220J0500105KXT 2220J0500105 ISO9001 2225J0500183KXT 2225J0500223KXT 2225J0500273KXT 2225J0500333KXT 2225J0500393KXT
Abstract: currents CDV=100pF. · The values for CVDD and C FS are C FS=CVDD=10nF. · Advised half bridge , ). 5) Warm ignition. CSW=220nF. 6) D1.D 4=BYD13M (=1N4007 equivalent, but smaller), CFS=10nF, CVDD=10nF , =1/(1.0712010327010-12)=28.8kHz. 4) The only E6-range value of CLA resulting in fign/fout between 1.6 and 1.8 is 1.0nF , ), CFS=10nF, CVDD=10nF and CDV=100pF (see section 6.4). 7) C HB1=CHB2=47nF (see section 6.4). LFILT is , -Core (illustration at the side) 3.9mH. 100pF/500V dc 10nF/50V 10nF/50V 270pF/50V 120k/1/8W 220nF/16V 11 Philips Semiconductors
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1N4007 equivalent 15w cfl cfl lamp 15w philips 11w cfl 14w cfl circuit philips 11W philips cfl UBA2024T 2003-A
Abstract: impedance. 16 UPC2798GR MEASUREMENT CIRCUIT 1 AGC & MIXER BLOCK 10nF 1 10nF AGC IN 100k VAGC 220nF VCC 1 1nF OSC OUT 20 2 19 10nF 10nF 10nF OSC IN 18 4 17 16 6 15 7 14 8 220nF 3 5 100k 13 9 12 10 MIX OUT 10nF 11 10nF 50 MEASUREMENT CIRCUIT 2 VIDEO AMP BLOCK RL = 1k 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 10nF Signal 50 Generator 50 California Eastern Laboratories
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NEC C2798G C2798G ISV209 UPC2798GR-E1 UPC2798GR-E1-A
Abstract: /NP0 X7R C0G/NP0 X7R C0G/NP0 X7R C0G/NP0 X7R C0G/NP0 X7R C0G/NP0 X7R 1.5nF 100nF 1.0nF 56nF 470pF 47nF 330pF 10nF 100pF 5.6nF n/a n/a n/a n/a 0805 6.8nF 330nF 4.7nF 220nF 2.7nF 220nF 1.8nF 47nF 680pF 27nF 330pF 8.2nF n/a n/a 1206 22nF 1.0uF 15nF 820nF 10nF 470nF 6.8nF 150nF 2.2nF 100nF 1.5nF 33nF 470pF 4.7nF 1210 33nF 1.5uF 22nF 1.2uF 18nF 1.0uF 12nF 470nF 4.7nF 220nF 3.3nF 100nF 1.0nF 15nF , 3.3uF 68nF 2.2uF 33nF 1.5uF 27nF 1.0uF 12nF 470nF 10nF 270nF 3.3nF 56nF 2220 150nF 5.6uF 100nF 4.7uF Syfer Technology
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IEC60384-14 capacitor 330nf 1kv capacitor 470nf 100v 0603 x7r capacitor 100nf 100v 0603 x7r Capacitor 47nF X3 250vac capacitor 1nf 500v 1812 x7r iec60384-14 250V X2 QC32100 EN60384
Abstract: GND 3.3V LOS1 L12 C41 10nF BD8.9_3_3-4S2 C1 100uF 6.3V Z1 5V1 VCC=3.3V BZX79C , LOS2/RSSI2 26 S2 30 2 IN1 LOS1/RSSI1 27 10nF INV2 28 1 VCC C22 INV1 29 BLM11P300S 10nF P5 C5 10nF L8 BLM11P300S C19 GND 32 P6 10nF R24 0 S1 31 VCC R22 0 24 VCC VCC C43 10nF P3 OUT1 23 3 IN1Q OUT1Q 22 4 VCC C44 10nF VCC 21 IC1 P4 TZA3019 / TZA3014 5 VCC VCC 20 6 IN2 OUT2 19 C45 10nF 7 Philips Semiconductors
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R114426 3006P 201 PHILIPS 433003036301 Philips 2322-702-96001 433003036301 dipsw_4 OM5809 AN01023 TP97036 HBCC32
Abstract: CLDA2 10F CLDA3 100nF CLDA4 10nF 3.5.5V CVDD1 10F VDD CVDD2 100nF CVDD3 10nF iC-HG LDK1 CI1 EN1 EN+LVDS & AGND1 + EN-LVDS CI CI 10nF LDK2 - CI2 , CLDA3 100nF CLDA4 10nF 3.5.5V CVDD1 10F VDD CVDD2 100nF CVDD3 10nF iC-HG , AGND2 CI3 CI CI 10nF LDK3 EN3 AGND3 CI4 LDK4 EN4 AGND4 CI5 LDK5 , CLDA1 100F CLDA2 10F CLDA3 100nF CLDA4 10nF 3.5.5V CVDD1 10F VDD CVDD2 100nF iC-Haus
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QFN28 G003 G008 D-55294
Abstract: : Feb 2014 PX-721 Single Frequency HPLL XO Test Circuits & Output Waveform +3.3V +3.3V 10nF OE or NC 1 2 5 3 OE or NC 4 1nF 6 10nF OE or NC 1 39 10nF 2 5 3 OE or NC NC 1nF 6 4 10nF Scope 10nF 200 10k 200 10k Scope 10k 10nF 10nF VMD VMD Figure 3 - LVPECL Production Test Circuit Figure 2 - LVCMOS Production Test Circuit +3.3V 1 OE or NC 6 2 1nF 5 3 tF tR 10nF Vectron International
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OC-192 GR-253-CORE 10M0000000 1200M00000 PX-721-HDJ-HABA-156M250000 D-74924
Abstract: 22uF 47uF 100uF 2.2F 4.7uF 3.3nF 2.2uF 2.2uF 3.3nF 1uF 1uF 4.7uF 10uF 10nF 2.2uF 10uF 10nF 1uF 4.7uF 10uF 22uF 27nF 4.7uF 22uF 10nF 2.2uF 10uF 10uF 22uF 47nF 22uF , 82nF 6.8uF 10nF 2.2uF 18nF 2.2uF 56nF 2.2uF 56nF 4.7uF 68nF 4.7uF 100nF 1uF 100nF 100nF 10nF 100nF 470pF 10nF 1808 1812 1825 2220 2225 120nF 47nF 3.3nF 100nF 10nF 330nF 270pF 18nF 1.2nF 100nF 1uF 1uF 10nF 1uF 1uF 6.8nF 470nF Holy Stone Enterprise
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4.7uF 25V X7R 0603 1206 22uF 35V 0402 X7R 100NF 25v 50V 10uF X7R 47uf 22uf
Abstract: , C16, C17, C18 J1, J2, J3, J4, J5, J6, J7, J8 P1, P2 R1 U1 Value 10nF 10nF 10nF 10nF Footprint 0402 0402 0402 0402 10nF 0402 Filter capacitor, sets the low frequency cutoff for the internal high pass filter. 10nF 10nF 0402 0402 AC grounding capacitor of TIA. DC blocking , blocking capacitors. Since this device is designed for use 0.1Gbps to 4.0Gbps, a value of 10nF was chosen , to keep all signals clean. Larger values of capacitors (10nF) are used to remove low frequency noise RF Micro Devices
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RF3744 RO4003
Abstract: , a value of 10nF was chosen to provide the best coupling across all data rates. The output of the , â"¦ â' 10nF ) Eq. 1 An RF Choke is used when applying DC bias in order to present constant , , C9, C26, C27 D1, D2, D3, D4 Value 10nF Footprint 0402 1ÂuF 0603 Loop constant capacitor, should be as close to IC as possible. 10nF 0402 Bypass capacitor. 10nF 0402 DC-blocking capacitor for AC ground. 10nF 0402 DC-blocking capacitor for laser input, should be as NEC
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PU10014EJ02V0DS PB1007K
Abstract: use at 0.1Gbps to 4.0Gbps, a value of 10nF was chosen to provide the best coupling across all data , , R11, R12 R5, R6, R7, R8 R13, R14, R15, R16 U1 Value 10nF 10nF Footprint 0402 0402 Description Bypass , 10nF 4.7uF 10nF 10nF 10nF 10nF 10 nF N/A N/A Ferrite Ferrite N/A 10k 10k 20 75 RFW3764 0402 0805 NEC
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PD3435 1540f 1SV285 VP215
Abstract: use at 0.1Gbps to 4.0Gbps, a value of 10nF was chosen to provide the best coupling across all data , , R11, R12 R5, R6, R7, R8 R13, R14, R15, R16 U1 Value 10nF 10nF Footprint 0402 0402 Description Bypass , 10nF 4.7uF 10nF 10nF 10nF 10nF 10 nF N/A N/A Ferrite Ferrite N/A 10k 10k 20 75 RFW3764 0402 0805 NEC
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QFN76 PB1005K
Abstract: , C12, C13, C14, C15, C16, C17, C18 J1, J2, J3, J4, J5, J6, J7, J8 P1, P2 R1 U1 Value 10nF 10nF 10nF 10nF 10nF 10nF 10nF Footprint 0402 0402 0402 0402 0402 0402 0402 Description Bypass capacitor. Bypass , . Since this device is designed for use 0.1Gbps to 4.0Gbps, a value of 10nF was chosen to provide the best , . Larger values of capacitors (10nF) are used to remove low frequency noise, and smaller values (3.9pF NEC
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UPB1007K-E1-A HS350 tape head preamplifier UPB1007K
Abstract: . A DC blocking capacitor is required on this input, 10nF is recommended. Preliminary Interface , ground through a 10 nF capacitor. DC feedback node for the 40dB limiting amplifier strip. A 10nF bypass , reference for the IF limiting amplifiers. A 10nF capacitor from this pin to ground is recommended. Ground , the 60dB limiting amplifier strip. A 10nF bypass capacitor from this pin to ground is required. See , returned to ground. A 10nF capacitor is recommended for 10.7MHz IF applications. GND4 is the ground shared RF Micro Devices
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RF3754
Abstract: , J12, J13, J14, J15, J16 P1 R1, R2, R3, R4 U1 Value 10nF Footprint 0402 Description DC-blocking capacitor of Input+, Input-, Output+, and Output-. 10nF 10nF N/A 0402 0402 N/A Filter capacitor , designed for use 0.1Gbps to 4.0Gbps, a value of 10nF was chosen to provide the best coupling across all RF Micro Devices
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DFB laser bare die diode t25 4 j6 diode t25 4 L8 IC LM3
Abstract: for use at 0.1Gbps to 4.0Gbps, a value of 10nF was chosen to provide the best coupling across all , - = - = 2MHz (R â' C) ( 50 â"¦ â' 10nF ) Eq. 1 An RF Choke , 10nF 10nF Footprint 0402 0402 Description Bypass capacitor, should be as close to IC as possible. DC-blocking capacitor for Input+ and Input- 10nF 0402 Bypass capacitor. 4.7uF 0805 Loop constant capacitor, should be as close to IC as possible. 10nF 0402 Bypass RF Micro Devices
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t25 4 j6 Edge-Emitting Diode
Abstract: 1 1V8 R152 0R C86 10nF VDDMPIO C268 1 2 100nF 1V8 AT91CAP9-STK Starter , : 3 1V2 2 2 1 1 J28 1X3PTS_MD_2MM54 VDDBU C101 10nF 1V2_SAVE The implementation of VDDANA and VREEP is shown below. C105 10nF C99 10nF 3 VIN VOUT 1 REF EN VREFP 5 2 1 1 1 C104 10uF_1210 2 C103 10nF 2 4,7uH 220mA 1 2 2 1 , 2 2 1V8 VCCIO7 1 1 R181 0R AB11 1 AB3 3V3 C256 10nF 2 R183 RF Micro Devices
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Rogers RO4003 1348 c23 8GHz transceiver specification RF374
Abstract: and reduce the carrier leakage. A 10nF external bypass capacitor is required. The trace length , VCO_ISET 27 VCC1 28 LO1- 5-76 Supply for the modulator stage only. A 10nF external bypass , connect immediately to ground plane for best performance. Supply for the PLLVCC only. A 10nF external RF Micro Devices
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sfeca RF2919 433/868/915MH 915MH 433MH 868MH 300MH
Abstract: to the 40dB limiting amplifier strip. A DC blocking capacitor is required on this input, 10nF is , limiting amplifier strip. A 10nF bypass capacitor from this pin to ground is recommended. See pin 11. IF , VREF IF GND5 DC voltage reference for the IF limiting amplifiers. A 10nF capacitor from this pin to , . A 10nF bypass capacitor from this pin to ground is required. See pin 17. This pin is used is supply , bypass capacitor should be connected directly to this pin and returned to ground. A 10nF capacitor is NEC
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nf 750 PU10014JJ02V0DS P15574JJ1V0DS00 PB1007K-E1 IR260 WS260 L03-3798-6372
Abstract: , J4, J5, J6, J7, J8, J9, J10, J11, J12, J13, J14, J15, J16 P1 R1, R2, R3, R4 U1 Value 10nF Footprint , COMMUNICATIONS 10nF 10nF N/A 0402 0402 N/A Filter capacitor, sets the low frequency cutoff for the , of 10nF was chosen to provide the best coupling across all data rates. The external potentiometer RF Micro Devices
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ro4003 rogers microstrip RFW3734
Abstract: should be used to resonate the capacitor between pins 11 and 12. DC blocking capacitors of 10nF can then , Description Balanced IF input to the 40dB limiting amplifier strip. A 10nF DC blocking capacitor is required , directly to ground through a 10nF capacitor. DC feedback node for the 40dB limiting amplifier strip. A 10nF bypass capacitor from this pin to ground is required. Same as pin 15. IF1 IN- See pin 13 , IF input to the 60dB limiting amplifier strip. A 10nF DC blocking capacitor is required on this input RF Micro Devices
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RF3764
Abstract: , C18 J1, J2, J3, J4, J5, J6, J7, J8 P1, P2 R1 U1 Value 10nF 10nF 10nF 10nF 10nF 10nF 10nF Footprint , for use 0.1Gbps to 4.0Gbps, a value of 10nF was chosen to provide the best coupling across all data , (10nF) are used to remove low frequency noise, and smaller values (3.9pF) reduce high frequency noise. A RF Micro Devices
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RF2668 LQFP-48 IS-98 MMBT3906DICT-ND
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