NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 10N60C5M | IXYS Corporation | CoolMOS Power MOSFET |
4 pages, |
Original |  |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: R1446NS12C R1271NS12 SW22CXC14C N600SH16 SW06CXC19C r1275ns20l R1271ns12C 60N80P 60N80P IXKN 40N60C 40N60C IXKN 45N80C 45N80C IXKN 75N60C 75N60C Ø IXKP 10N60C5 Ø IXKP 10N60C5M Ø IXKP 13N60C5 13N60C5 Ø IXKP ... | Original |
288 pages, |
Westcode SW22cxc14c vub 70-12 48N60 vub 70-16 60n30 IXDD 614 10M45 C 547 B W57 BJT transistor 10N60C 18N50 equivalent MOSFET smd 4407 7N60B equivalent datasheet abstract |
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| Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20080523c 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20080523c 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = 40 ID = 5.2 A VGS = 10 V 7V 5V 5.5 V VDS > 2·RDS(on ... | Original |
4 pages, |
10N60C5M 10N60C 10N60C5M abstract |
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| Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20080523b 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 8V 10 V 8V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20080523b 3-4 IXKP 10N60C5 ... | Original |
4 pages, |
10N60C 10N60C5 10N60C5 abstract |
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| Abstract: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET , ns ns 3.95 K/W 0649 Symbol 1-4 Advanced Technical Information IXKP 10N60C5M , RthJA °C °C 0649 Symbol 2-4 IXKP 10N60C5M Advanced Technical Information TO-220 , characteristics 0649 0 3-4 IXKP 10N60C5M Advanced Technical Information 1.6 6V VDS = 40 ... | Original |
4 pages, |
10N60C5M 10N60C5M abstract |
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| Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20090209d 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20090209d 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = ID = 5.2 A VGS = 10 V 7V 5V 28 0.8 24 I D [A ... | Original |
4 pages, |
10N60C5M 10N60C 10N60C5M abstract |
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| Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20090209c 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 100 8V 10 V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20090209c 3-4 IXKP 10N60C5 ... | Original |
4 pages, |
10N60C 10N60C5 10N60C5 abstract |
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