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Part : FQPF10N60C Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.8758 Price Each : $1.0187
Part : SIPC10N60C3X1SA2 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.7822 Price Each : $0.8922
Part : SIPC10N60CFDX1SA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.8182 Price Each : $0.9332
Part : FQPF10N60C Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : FQPF10N60C_F105 Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $1.22 Price Each : $1.97
Part : FQA10N60C Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 44,527 Best Price : $2.18 Price Each : $2.68
Part : FQI10N60CTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 117,009 Best Price : $0.91 Price Each : $1.12
Part : FQP10N60C Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 2,646 Best Price : $1.21 Price Each : $1.48
Part : FQPF10N60C Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 29,177 Best Price : $1.15 Price Each : $1.41
Part : FQPF10N60CT Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 2,741 Best Price : $0.81 Price Each : $1.00
Part : FQPF10N60CYDTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 549 Best Price : $0.91 Price Each : $1.12
Part : FQP10N60C Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 42 Best Price : - Price Each : -
Part : FQP10N60C Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.8620 Price Each : £1.83
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10N60C Datasheet

Part Manufacturer Description PDF Type
10N60C5M IXYS CoolMOS Power MOSFET Original

10N60C

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: : FQPF Line 3: 10N60C Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 10N60CT FQPF10N60CT Full Production $1.60 TO-220F 3 RAIL * Fairchild Fairchild Semiconductor
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FQPF Series fqpf10n60c FQPF Series 10N60 FQPF
Abstract: Code) Line 2: FQB Line 3: 10N60C * Fairchild 1,000 piece Budgetary Pricing * A sample button will Fairchild Semiconductor
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FQB10N60C FQI10N60C FQB10N60CTM
Abstract: ) Line 2: FQI Line 3: 10N60C * Fairchild 1,000 piece Budgetary Pricing * A sample button will appear Fairchild Semiconductor
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Abstract: IXKP 10N60C5 COOLMOS® * Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , Technologies AG. pF pF 22 ns ns ns ns ns ns ns 1.15 K/W 20080310a 1-4 IXKP 10N60C5 , 20080310a 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 8V 10 V , 10N60C5 1.6 6V 40 ID = 5.2 A VGS = 10 V 7V 5V 5.5 V VDS > 2·RDS(on) max · ID 36 IXYS
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Abstract: IXKP 10N60C5M CoolMOSâ"¢ 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 â"¦ Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , . pF pF 22 nC nC nC ns ns ns ns 3.95 K/W 20090209d 1-4 IXKP 10N60C5M , Characteristic Values min. RthCH RthJA °C °C 20090209d 2-4 IXKP 10N60C5M TO-220 ABFP Outline , characteristics 20090209d 3-4 IXKP 10N60C5M 1.6 6V 1.2 6.5 V 40 ID = 5.2 A VGS = 10 V IXYS
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Abstract: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET , ns ns 3.95 K/W 0649 Symbol 1-4 Advanced Technical Information IXKP 10N60C5M , RthJA °C °C 0649 Symbol 2-4 IXKP 10N60C5M Advanced Technical Information TO , characteristics 0649 0 3-4 IXKP 10N60C5M Advanced Technical Information 1.6 6V VDS = 40 IXYS
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c16tj IGBT GS kw0649
Abstract: IXKP 10N60C5 Advanced Technical Information COOLMOS® * Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra , 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Symbol #24;-4 IXKP 10N60C5 Advanced Technical Information TO-220 AB Outline 100 , . output characteristics 0649 20 #24;-4 IXKP 10N60C5 Advanced Technical Information 1.6 6V IXYS
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Abstract: IXKP 10N60C5M COOLMOS® * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , 10N60C5M Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise , Characteristic Values min. RthCH RthJA °C °C 20080310b 2-4 IXKP 10N60C5M TO-220 ABFP Outline , characteristics 20080310b 3-4 IXKP 10N60C5M 1.6 6V VDS = 40 ID = 5.2 A VGS = 10 V 7V 5V IXYS
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Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20090209d 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20090209d 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = ID = 5.2 A VGS = 10 V 7V 5V 28 0.8 24 I D [A IXYS
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Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20080523c 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20080523c 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = 40 ID = 5.2 A VGS = 10 V 7V 5V 5.5 V VDS > 2·RDS(on IXYS
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Abstract: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET , © 2007 IXYS All rights reserved 1-4 Advanced Technical Information IXKP 10N60C5M , . 20070704a9 © 2007 IXYS All rights reserved 2-4 Advanced Technical Information IXKP 10N60C5M , IXKP 10N60C5M 40 1.6 6V 6.5 V 7V 1.2 VDS = 5V 5.5 V ID = 5.2 A VGS = 10 V 1 VDS IXYS
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GS54
Abstract: 60N80P IXKN 40N60C IXKN 45N80C IXKN 75N60C Ø IXKP 10N60C5 Ø IXKP 10N60C5M Ø IXKP 13N60C5 Ø IXKP IXYS
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7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor MO-153 MS-013 MS-012 5M-1994 MO-229
Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20080523b 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 8V 10 V 8V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20080523b 3-4 IXKP 10N60C5 IXYS
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IXKP10N60C5
Abstract: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET , All rights reserved 1-4 0649 Advanced Technical Information IXKP 10N60C5M Source-Drain , rights reserved 2-4 0649 Advanced Technical Information IXKP 10N60C5M TO-220 ABFP Outline , rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5M 40 1.6 6V 6.5 IXYS
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C3525
Abstract: Advanced Technical Information COOLMOS® * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon , Symbol #24;-4 Advanced Technical Information IXKP 10N60C5M Source-Drain Diode Symbol , °C 0649 Symbol #24;-4 IXKP 10N60C5M Advanced Technical Information TO-220 ABFP Outline , 10N60C5M Advanced Technical Information 1.6 6V 40 1.2 6.5 V ID = 5.2 A VGS = 10 V IXYS
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Abstract: IXKP 10N60C5 CoolMOSâ"¢ 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 â"¦ ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , Technologies AG. pF pF 22 ns ns ns ns ns ns ns 1.15 K/W 20090209c 1-4 IXKP 10N60C5 , 20090209c 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 8V 10 V , IXKP 10N60C5 1.6 6V 1.2 6.5 V 40 ID = 5.2 A VGS = 10 V VDS = 7V 5V 25 °C 1 IXYS
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Abstract: Advanced Technical Information IXKP 10N60C5 ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D , Information IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Advanced Technical Information IXKP 10N60C5 TO-220 AB Outline 120 25 16 TJ = , . © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5 40 IXYS
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Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20090209c 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 100 8V 10 V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20090209c 3-4 IXKP 10N60C5 IXYS
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Abstract: Advanced Technical Information IXKP 10N60C5 ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D , IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Advanced Technical Information IXKP 10N60C5 TO-220 AB Outline 120 25 16 TJ = , . © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5 40 IXYS
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