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10N60C* Datasheet

Part Manufacturer Description PDF Type Ordering
10N60C5M IXYS Corporation CoolMOS Power MOSFET
ri

4 pages,
100.24 Kb

Original Buy
datasheet frame

10N60C*

Catalog Datasheet Type PDF Document Tags
Abstract: Plant Code) &4 (4-Digit Date Code) Line 2: FQI Line 3: 10N60C * Fairchild 1,000 piece Budgetary ... Original
datasheet

11 pages,
749.16 Kb

10N60C FQB10N60C FQI10N60C FQB10N60C abstract
datasheet frame
Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20090209d 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20090209d 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = ID = 5.2 A VGS = 10 V 7V 5V 28 0.8 24 I D [A ... Original
datasheet

4 pages,
93.98 Kb

10N60C5M 10N60C 10N60C5M abstract
datasheet frame
Abstract: : FQPF Line 3: 10N60C Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 10N60CT FQPF10N60CT FQPF10N60CT Full Production $1.60 TO-220F 3 RAIL * Fairchild ... Original
datasheet

12 pages,
1145.57 Kb

power mosfet 600v MOSFET 600V switching FQPF 10N60 FQPF Series FQPF10N60C FQPF Series fqpf10n60c FQPF10N60CT 10N60C 10N60CT FQP10N60C FQP10N60C abstract
datasheet frame
Abstract: (Asm. Plant Code) &4 (4-Digit Date Code) Line 2: FQB Line 3: 10N60C * Fairchild 1,000 piece Budgetary ... Original
datasheet

11 pages,
749.41 Kb

10N60C FQB10N60C FQI10N60C FQB10N60C abstract
datasheet frame
Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20080523c 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20080523c 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = 40 ID = 5.2 A VGS = 10 V 7V 5V 5.5 V VDS > 2·RDS(on ... Original
datasheet

4 pages,
94.07 Kb

10N60C5M 10N60C 10N60C5M abstract
datasheet frame
Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20080523b 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 8V 10 V 8V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20080523b 3-4 IXKP 10N60C5 ... Original
datasheet

4 pages,
95.31 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame
Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20090209c 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 100 8V 10 V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20090209c 3-4 IXKP 10N60C5 ... Original
datasheet

4 pages,
95.34 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame
Abstract: Advanced Technical Information IXKP 10N60C5 ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D , Information IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Advanced Technical Information IXKP 10N60C5 TO-220 AB Outline 120 25 16 TJ = , © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5 40 ... Original
datasheet

4 pages,
97.57 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame
Abstract: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET , All rights reserved 1-4 0649 Advanced Technical Information IXKP 10N60C5M Source-Drain , rights reserved 2-4 0649 Advanced Technical Information IXKP 10N60C5M TO-220 ABFP Outline , rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5M 40 1.6 6V 6.5 ... Original
datasheet

4 pages,
94.8 Kb

10N60C 10N60C5M 10N60C5M abstract
datasheet frame
Abstract: Advanced Technical Information IXKP 10N60C5 ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D , IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Advanced Technical Information IXKP 10N60C5 TO-220 AB Outline 120 25 16 TJ = , © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5 40 ... Original
datasheet

4 pages,
100.45 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame