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10N60C* Datasheet

Part Manufacturer Description PDF Type Ordering
10N60C5M IXYS Corporation CoolMOS Power MOSFET
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4 pages,
100.24 Kb

Original Buy
datasheet frame

10N60C*

Catalog Datasheet Results Type PDF Document Tags
Abstract: Plant Code) &4 (4-Digit Date Code) Line 2: FQI Line 3: 10N60C * Fairchild 1,000 piece Budgetary ... Original
datasheet

11 pages,
749.16 Kb

10N60C FQB10N60C FQI10N60C FQB10N60C abstract
datasheet frame
Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20090209d 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20090209d 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = ID = 5.2 A VGS = 10 V 7V 5V 28 0.8 24 I D [A ... Original
datasheet

4 pages,
93.98 Kb

10N60C5M 10N60C 10N60C5M abstract
datasheet frame
Abstract: : FQPF Line 3: 10N60C Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 10N60CT FQPF10N60CT FQPF10N60CT Full Production $1.60 TO-220F 3 RAIL * Fairchild ... Original
datasheet

12 pages,
1145.57 Kb

FQPF Series FQPF10N60CT FQPF10N60C FQPF Series fqpf10n60c 10N60C 10N60CT FQP10N60C FQP10N60C abstract
datasheet frame
Abstract: (Asm. Plant Code) &4 (4-Digit Date Code) Line 2: FQB Line 3: 10N60C * Fairchild 1,000 piece Budgetary ... Original
datasheet

11 pages,
749.41 Kb

10N60C FQB10N60C FQI10N60C FQB10N60C abstract
datasheet frame
Abstract: IXKP 10N60C5M CoolMOSTM 1) Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge , nC ns ns ns ns 3.95 K/W 20080523c 1-4 IXKP 10N60C5M Source-Drain Diode Symbol , RthJA °C °C 20080523c 2-4 IXKP 10N60C5M TO-220 ABFP Outline ØP A E A1 H Q , IXKP 10N60C5M 1.6 6V VDS = 40 ID = 5.2 A VGS = 10 V 7V 5V 5.5 V VDS > 2·RDS(on ... Original
datasheet

4 pages,
94.07 Kb

10N60C5M 10N60C 10N60C5M abstract
datasheet frame
Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20080523b 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 8V 10 V 8V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20080523b 3-4 IXKP 10N60C5 ... Original
datasheet

4 pages,
95.31 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame
Abstract: IXKP 10N60C5 CoolMOSTM 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G , 22 ns ns ns ns ns ns ns 1.15 K/W 20090209c 1-4 IXKP 10N60C5 Source-Drain , 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 100 8V 10 V , 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20090209c 3-4 IXKP 10N60C5 ... Original
datasheet

4 pages,
95.34 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame
Abstract: Advanced Technical Information IXKP 10N60C5 ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D , Information IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Advanced Technical Information IXKP 10N60C5 TO-220 AB Outline 120 25 16 TJ = , © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5 40 ... Original
datasheet

4 pages,
97.57 Kb

10N60C5 10N60C5 abstract
datasheet frame
Abstract: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 COOLMOS® * Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET , All rights reserved 1-4 0649 Advanced Technical Information IXKP 10N60C5M Source-Drain , rights reserved 2-4 0649 Advanced Technical Information IXKP 10N60C5M TO-220 ABFP Outline , rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5M 40 1.6 6V 6.5 ... Original
datasheet

4 pages,
94.8 Kb

10N60C5M 10N60C5M abstract
datasheet frame
Abstract: Advanced Technical Information IXKP 10N60C5 ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D , IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 0649 Advanced Technical Information IXKP 10N60C5 TO-220 AB Outline 120 25 16 TJ = , © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5 40 ... Original
datasheet

4 pages,
100.45 Kb

10N60C 10N60C5 10N60C5 abstract
datasheet frame