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EP1SGX10DF672C6N Altera Corporation Field Programmable Gate Array, 1200 CLBs, 10570-Cell, CMOS, PBGA672, 27 X 27 MM, 1 MM PITCH, FBGA-672 visit Digikey Buy
EP1SGX10DF672I6 Altera Corporation Field Programmable Gate Array, 1200 CLBs, 10570-Cell, CMOS, PBGA672, 27 X 27 MM, 1 MM PITCH, FBGA-672 visit Digikey Buy
EP1SGX10DF672C7 Altera Corporation Field Programmable Gate Array, 1200 CLBs, 10570-Cell, CMOS, PBGA672, 27 X 27 MM, 1 MM PITCH, FBGA-672 visit Digikey Buy
EP1SGX10DF672C5 Altera Corporation Field Programmable Gate Array, 1200 CLBs, 10570-Cell, CMOS, PBGA672, 27 X 27 MM, 1 MM PITCH, FBGA-672 visit Digikey Buy
EP1SGX10DF672C6 Altera Corporation Field Programmable Gate Array, 1200 CLBs, 10570-Cell, CMOS, PBGA672, 27 X 27 MM, 1 MM PITCH, FBGA-672 visit Digikey Buy
EP1SGX10DF672C7N Altera Corporation Field Programmable Gate Array, 1200 CLBs, 10570-Cell, CMOS, PBGA672, 27 X 27 MM, 1 MM PITCH, FBGA-672 visit Digikey Buy

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10DF6 Datasheet

Part Manufacturer Description PDF Type
10DF6 International Rectifier DIODE ULTRA FAST RECOVERY 600V 1A 2DO-204AL Original
10DF6 Nihon Inter Electronics diode Original
10DF6 International Rectifier Ultra Fast Recovery Diodes Scan
10DF6 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
10DF6 N/A The Diode Data Book with Package Outlines 1993 Scan
10DF6 Nihon Inter Electronics FAST RECOVERY DIODE Scan
10DF6TR International Rectifier 600V 1A Ultra-Fast Discrete Diode in a DO-204AL package Original
10DF6TR N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

10DF6

Catalog Datasheet MFG & Type PDF Document Tags

10DF6

Abstract: 10DF4 FRD FEATURES Type :10DF6 OUTLINE DRAWING * Miniature Size , 10DF6 600 700 50Hz Half Sine Ta=12°C 1 Wave Resistive Load Ta=52°C 2 1.57 50Hz Half Sine Wave,1cycle , ,Both Sides) 10DF6 OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE 10DF4/10DF6 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 0.2 0.1 , AVERAGE FORWARD POWER DISSIPATION 10DF4/10DF6 AVERAGE FORWARD POWER DISSIPATION (W) D.C. 1.6
Nihon Inter Electronics
Original
10DF4 10DF4/10DF6

10DF6

Abstract: 10DF4 Temperature Range Symbol VRRM VRSM 10DF6 600 700 Ta=12 , 1 50Hz, Half Sine Wave , ) FORWARD CURRENT VS. VOLTAGE 10DF4/10DF6 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj , ° CONDUCTION ANGLE 180° AVERAGE FORWARD POWER DISSIPATION 10DF4/10DF6 AVERAGE FORWARD POWER , ° - AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE Without Fin or P.C. Board 10DF4/10DF6 D.C , =8mm,Print Land=10×10mm) 10DF4/10DF6 D.C. 1.6 AVERAGE FORWARD CURRENT (A) 1.2 RECT 180
Nihon Inter Electronics
Original

10DF6

Abstract: 10DF4 ) FORWARD CURRENT VS. VOLTAGE 10DF4/10DF6 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj , ° CONDUCTION ANGLE 180° AVERAGE FORWARD POWER DISSIPATION 10DF4/10DF6 AVERAGE FORWARD POWER , ° - AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE Without Fin or P.C. Board 10DF4/10DF6 D.C , =8mm,Print Land=10×10mm) 10DF4/10DF6 D.C. 1.6 AVERAGE FORWARD CURRENT (A) 1.2 RECT 180 , ) SURGE CURRENT RATINGS f=50Hz,Half Sine Wave,Non-Repetitive,No Load 10DF4/10DF6 40 SURGE
Nihon Inter Electronics
Original

10DF4

Abstract: 10DF6 FAST RECOVERY DIODE 1.1A/400â'"800V/trr: lOOnsec 10DF4 10DF6 10DF8 FEATURES â'¢ Miniature Size ° Super Fast Recovery « Low Forward Voltage Drop â'¢ Low Power Loss, High Efficiency ° High Surge Capability o 100 Volts thru 800 Volts Types Available »52mm Inside Tape Spacing Package , Grams Voltage Rating \TYPE Symbol^^ 10DF4 10DF6 ♦ 10DF8 Unit Repetitive Peak Reverse Voltage VRRM , Respective Manufacturer 10DF4 10DF6 10DF8 FIG. 1 - FORWARD VOLTAGE VS. FORWARD CURRENT 50.5 to gO. 2 in
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OCR Scan
diode f2 4j

10DF6

Abstract: 10DF4 FAST RECOVERY DIODE FEATU R ES ° Miniature Size · Super Fast Recovery · Low Forward Voltage Drop · Low Power Loss, High Efficiency ° High Surge Capability 1 .1A /4 00- 800V /trr : lOOnsec 10DF4 10DF6 10DF8 ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package , 400 500 10DF6 600 700 Condition 180° rectangular wave conduction 100° sinusoidal wave conduction , x 1 0 m m (R jfc Nhofl Mar Bectront o Caporallon 10DF4 10DF6 10DF8 FK3.I-FO RW ARD VOLTAGE
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OCR Scan

10DF6

Abstract: 10DF4 10DF4/10DF6 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 0.2 0.1 , AVERAGE FORWARD POWER DISSIPATION 10DF4/10DF6 AVERAGE FORWARD POWER DISSIPATION (W) D.C. 1.6 , TEMPERATURE Without Fin or P.C. Board 10DF4/10DF6 D.C. 1.4 AVERAGE FORWARD CURRENT (A) 1.2 HALF , TEMPERATURE P.C. Board mounted (L=8mm,Print Land=10×10mm) 10DF4/10DF6 D.C. 1.6 AVERAGE FORWARD CURRENT , /10DF6 40 SURGE FORWARD CURRENT (A) 30 20 10 I FSM 0.02s 0 0.02 0.05 0.1 0.2
Nihon Inter Electronics
Original

10DF6

Abstract: 10X10MM FRD Type :10DF6 OUTLINE DRAWING FEATURES * Miniature Size * Super Fast Recovery * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Approx , Average Rectified Output Current 10DF6 VRRM VRSM IO RMS Forward Current IF(RMS) Surge , µA V ns °C/W 10DF6 OUTLINE DRAWING (Dimensions in mm) Nihon Inter Electronics
Nihon Inter Electronics
Original
10X10MM

igbt driver with 555 timer

Abstract: ic 555 timer circuit can be achieved. 10DF6 12V VCC 1 µF 0 - 500V VB + RG IN IN HO , CMOS timer. When the IGBT is off, the bootstrap capacitor is charged through the 10DF6 diode and the
International Rectifier
Original
ICL71555IPA igbt driver with 555 timer ic 555 timer of ic 555 ic 555 timer gate drive schematic circuit ic 555 timer gate drive mosfet 555 timer igbt driver IR2125 1N4148
Abstract: FAST RECOVERY DIODE 1.1A /400â'" 800V /trr: lOOnsec 10DF4 10DF6 10DF8 FEATURES â'¢ Miniature Size ° Super Fast Recovery « Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available » 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS \ type Voltage Rating 10DF4 10DF6 ♦ 10DF8 Unit Symbol\. , parts only 4 4 0 â  bblSlEB 0002145 f M l lf 10DF4 10DF6 10DF8 FIG .I-FO R W A R D -
OCR Scan
G0G214

ELECTRONIC BALLAST 1 T8 36w LAMP SCHEMATIC

Abstract: Electronic ballast 58W , DBR4, D1, D2, D3: 10DF6 diode C1 = 0.33uF, 275VAC L1 = 1X10mH 0.7Apk, Common mode EMI inductor C2 , 1 1 1 42 Part Number Description Reference 10DF6 Panasonic International , 15 16 1 1 Resistor, 22K Ohm Resistor, 18K Ohm RT2 RPH3 10DF6 Description
International Rectifier
Original
IR2156 ELECTRONIC BALLAST 1 T8 36w LAMP SCHEMATIC Electronic ballast 58W ELECTRONIC BALLAST 4 T8 SCHEMATIC t8 36w electronic ballast electronic ballast 36W mosfet Ah5 AN-1074 SMT1206 LL4148DICT-ND

ICL715551PA

Abstract: IR2125 OFF 10DF6 ON 100k 1 8 555 100nF IR2125 5 15V 1N4148 2 10nF 1 555 3
International Rectifier
Original
ICL715551PA ic1 555 ICl71555 cmos 555 1.8v MOSFET IGBT RECTIFIER p mosfet 92-4AJ DC500V IR21258 IR2125IC 555CMOS

10JF2

Abstract: 10DF8 INTERNATIONAL RECTIFIER HE D Ultra Fast Recovery Diodes I MÛSS452 aaiaazt. i | 1 TO 5 AMPS Part Number VRWM (V) 'f(AV) ® Tc VFM® >FSM
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OCR Scan
10DF1 10DF2 11DF1 11DF3 110F4 30DF2 10JF2 300f 30WF20F 10QF4 DO-41 110F2

single phase IR2130

Abstract: ir2130 Index Design Tips DT 94-11 3-Phase Bridge Drive With Overcurrent Protection by Jamie Catt +15V 3 X 10DF6 IR2130 LOGIC INPUT SIGNALS 1K 1 2 3 4 5 6 7 8 9 10 11 12 13 14 VCC HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FAULT ITRIP CAO CAVSS VS0 L03 28 VB1 H01 27 VS1 26 24 VB2 23 H02 VS2 22 20 VB3 H03 19 VS3 18 L01 16 L02 15 BOOTSTRAP CAPACITORS 3 X0.1 µF 100 47 100 47 A 100 + 47 B 100 C 100 20 100 ISHUNT
International Rectifier
Original
single phase IR2130 IR2130 3 phase ir2130 application L0328 application IR2130 10047A

6CWF20F

Abstract: 30DF2 INTERNATIONAL RECTIFIER EfeiE D Hfl5S4SE OOlQlll â¡ Rectifiers Ultra-Fast Recovery 1 to 6.6 Amps â  T-Ã3-/S T-Ã3-/7 International ^Rectifier Part Valliti â'¢F(AV] @ Tc VFM ® >FSM(1) "true Max. A Case Notes Case Style nWM 'F(AV) @ 60 Hz DC *rr Outline Number (V) (A)
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OCR Scan
11DF2 11DF4 31DF4 30WF10F 50WF40F 6CWF20F 6CWF20 00-204AL 300F1 30DF4 30DF6

motorola diode cross reference

Abstract: replacement UF5402 MURIIO MUR120 MURI30 MUR140 ÎODFI 10DF2 10DF4 10DF6 10DF8 11DF1 11DF2 11DF3 11DF4 UF4004 RGP15G RGP15J , /Similar Replacement 11EFS1 11EFS2 10EF2 10DF1 10DF2 10DF4 10DF6 10DF8 11DF1 11DF2 11DF3 11DF4 15DF4 15DF6
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OCR Scan
FEN30DP 11ES2 motorola diode cross reference replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190

30WF10

Abstract: 11DF1 Rectifiers Ultra-Fast Recovery 1 to 6.6 Amps ' f (a v ) @ TC Part Number 10DF1 10DF2 10DF4 10DF6 10DF8 11DF1 11DF2 11DF3 11DF4 30DF1 30DF2 30DF4 30DF6 31DF1 31DF2 31DF3 31DF4 10MF2 VRWM (V) 100 200 400 600 800 100 200 300 400 100 200 400 600 100 200 300 400 200 (A) 1 1 1 1 1 1 1 1 1 3 3 3 3 3 3 3 3 1 (°C) 25 25 25 25 25 63 63 63 63 40 40 40 40 57 57 57 57 122 International [^Rectifier vFM @ >F(AV) (V) 1.05 1.05 1.20 1.20 1.20 0.98 0.98 1.25 1.25 1.05 1.05 1.25 1.25 0.98 0.98 1.25 1.25 0.98 ' f s m
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OCR Scan
30WF10 30WF30F 30WF40F 50WF10F 50WF20F 50WF30F 6CWF10F

FSF05B60

Abstract: FSF10B60 10DF2 10DRA20 67 10DF4 10DRA40 68 10DF6 10DRA60 69 15DF4 15KRA40 70 15DF6 15KRA60 71 20NFA60
Nihon Inter Electronics
Original
NSF03B60 FSF05B60 SF05A60-11TSF05B60-11A FCF20B60 C30P10Q KCQ60A04 FSF10B60 F10P10Q 30pfb60 11ES1 10EDB10 10EDB20 10JDA10 10JDA20 10JDA40

10DF1

Abstract: 10DF8 capacitive load,derate by 20%. 10DF1 10DF2 10DF4 10DF6 10DF8 UNITS Maximum recurrent
BL Galaxy Electrical
Original
10DF1---10DF8 DO--41 STD-202 50VDC

3 phase dc control ir2130

Abstract: igbt driver ir2130 circuit ) 10DF6 Ultra-fast recovery diode 10F,25V tantalum capacitor 1nF,50V Ceramic capacitor,type 1206 0.1F
International Rectifier
Original
IR2130S IR2130J 3 phase dc control ir2130 igbt driver ir2130 circuit smd 3 phase rectifier bridge MP816 IR2130 APPLICATIONS 93-6AJ IRGBC30UD2-S

Rectifier

Abstract: 10DF2 £07 ,_/£ii£i/ ^^rni-C-onauctoi J Li na. Cx TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Rectifiers Ultra-Fast Recovery 1 to 6.6 Amps Plrt Number VRWM
New Jersey Semiconductor
Original
Rectifier 100F1 300F2 310F2 30WF20 30WF30 30WF40

Drive circuit for IGBT using IR2130

Abstract: Schematic Drive circuit for IGBT using IR2130 ) D1-D6 10DF6 Ultra-fast recovery diode C2 10 |jF, 25V tantalum capacitor C3 1 nF, 50V Ceramic capacitor , ) D1-D6 10DF6 Ultra-fast recovery diode C2 10 |jF, 25V tantalum capacitor C3 1 nF, 50V Ceramic capacitor
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OCR Scan
Drive circuit for IGBT using IR2130 Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output T0-220 IRGBC30KD2-S

schematic diagram 3 phase ac drive

Abstract: Drive circuit for IGBT using IR2130 , (Caddock typeMP816) 10DF6 Ultra-fast recovery diode l 0 µF, 25V tantalum capacitor I nF, 50V Ceramic
International Rectifier
Original
AN-98S AN-978A schematic diagram 3 phase ac drive ac motor speed control circuit diagram with IGBT ac motor speed control circuit ir2130 bldc motor control circuit diagrams IGBT DRIVER SCHEMATIC 3 PHASE ir2130 bldc 3314G DT93-6 AN-983A AN-990
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