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TPS61024DRCR Texas Instruments 3.0-V Output, 1.5-A Switch, 96% Efficient Boost Converter w/ LDO Down-Mode, QFN-10 10-VSON -40 to 85 ri Buy Buy
TPS61024DRCRG4 Texas Instruments 3.0-V Output, 1.5-A Switch, 96% Efficient Boost Converter w/ LDO Down-Mode, QFN-10 10-VSON -40 to 85 ri Buy Buy
TPS61024DRCT Texas Instruments IC 1.8 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, PLASTIC, SON-10, Switching Regulator or Controller ri Buy

1024-bit

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: with high level of security. 1408-bit crypto engine optimized for 1024-bit and 2048-bit RSA , 1024-bit and 2048-bit RSA calculation, Elliptic Curves. Certified CC EAL5+ high. SLE 88CF(X)4000P 4000P , -bit crypto engine optimized for 1024-bit and 2048-bit RSA calculation, Elliptic Curves. Certified CC EAL5 , cards with high level of security. 1408-bit crypto engine optimized for 1024-bit and 2048-bit RSA , for multi-application cards with high level of security. 1408-bit crypto engine optimized for 1024-bit ... Infineon Technologies
Original
datasheet

4 pages,
33.92 Kb

4002p 88C1640P 88CFX2921P 88CFX4002P 88CNF5400P 88CNFX6602PM mais RSA 1024 chips 184-kByte 88CNFX5400PM 88CNFX6600PM SLE88CFX4000P nxp nfc nfc chip TEXT
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Abstract: GXB10415A GXB10415A 1024-bit RAM The GX family of ECL silicon monolithic integrated circuits is designed for high , recommended for high speed large system design. The GXB10415 GXB10415 and 10415A are 1024-bit random access memories , corresponds to the ECL 10 000 series. 1024-BIT, 1-BIT PER WORD RANDOM ACCESS MEMORIES Pin abbreviations CS , GXB10415 GXB10415 GXB10415A GXB10415A 1024-bit RAM 7 16 2 A0 3 Ai 4 A 2 5 A3 6 A4 X DECODER /DRIVER 14 CS. 13 WE , 1024-bit RAM Ag to Ag (10-bit addresses) provide the bit selection; the active LOW chip select input ... OCR Scan
datasheet

9 pages,
175.67 Kb

GXB10415AD GXB10415A GXB10415 GXB10415D TEXT
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Abstract: I ' ; ' i ì, I' ^ . I 2» i •ili fr', signotics 1024-BIT CAPACITY MULTIPLEXED DYNAMIC SHIFT REGISTERS description These Signetics 2500 Series 1024-bit multiplexed dynamic shift registers , Respective Manufacturer signetics 1024-bit capacity multiplexed dynamic shift registers ■ 2502/3/4 part , &^inC«ramic DIP 2&03TA Dual 512-bit TO-99 2503V Dual 512-bit 8-Pin DIP 2504TA 2504TA Singt« 1024-bit TO-99 2504V Single 1024-bit 8-Pin DIP ie)ur 125 C/W maximum signetics guaranteed ratings*1) ,(2> Operating ... OCR Scan
datasheet

5 pages,
136.61 Kb

signetics 2503V signetics 2502 26 SIGNETICS 2502B 2504TA 2504V 2504v signetics HC 1024 NA 1024-BIT TEXT
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Abstract: DS25LV02 DS25LV02 Low-Voltage 1024-Bit EPROM www.maxim-ic.com GENERAL DESCRIPTION FEATURES The , allows multidrop networking and identification of individual devices. The 1024-bit EPROM memory is , . 1 of 17 051106 DS25LV02 DS25LV02: Low-Voltage 1024-Bit EPROM ABSOLUTE MAXIMUM RATINGS Voltage Range , 17 MIN 10 TYP MAX UNITS Years DS25LV02 DS25LV02: Low-Voltage 1024-Bit EPROM AC ELECTRICAL , guaranteed by design. 3 of 17 DS25LV02 DS25LV02: Low-Voltage 1024-Bit EPROM PIN DESCRIPTION PIN NAME ... Dallas Semiconductor
Original
datasheet

17 pages,
249.4 Kb

DS25LV02 TEXT
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Abstract: SEMICONDUCTOR TM NM93CS46 NM93CS46 (MICROWIRE™ Bus Interface) 1024-Bit Serial EEPROM with Data , NM93CS46 NM93CS46 (MICROWIRE Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read , Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read , Cycle Time 3 ns www.fairchildsemi.com NM93CS46 NM93CS46 (MICROWIRE Bus Interface) 1024-Bit Serial , www.fairchildsemi.com NM93CS46 NM93CS46 (MICROWIRE Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential ... OCR Scan
datasheet

13 pages,
258.06 Kb

NM93CS46 TEXT
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Abstract: s e m ic o n d u c t o r ™ NM93CS46 NM93CS46 (MICROWIRE™ Bus Interface) 1024-Bit Serial EEPROM , ) 1024-Bit Serial EEPROM with Data Protect and Sequential Read_ February 1999 , NM93CS46 NM93CS46 (MICROWIRE Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read , (MICROWIRE Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read , 100 pF) 4 NM93CS46 NM93CS46 Rev. C.1 www.fai rchi Idsemi .com NM93CS46 NM93CS46 (MICROWIRE Bus Interface) 1024-Bit ... OCR Scan
datasheet

13 pages,
261.19 Kb

NM93CS46 TEXT
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Abstract: DS25LV02 DS25LV02 Low-Voltage 1024-Bit EPROM www.maxim-ic.com GENERAL DESCRIPTION FEATURES The , allows multidrop networking and identification of individual devices. The 1024-bit EPROM memory is , of 17 051106 DS25LV02 DS25LV02: Low-Voltage 1024-Bit EPROM ABSOLUTE MAXIMUM RATINGS Voltage Range , Years DS25LV02 DS25LV02: Low-Voltage 1024-Bit EPROM AC ELECTRICAL CHARACTERISTICS: EPROM PROGRAMMING , . 3 of 17 DS25LV02 DS25LV02: Low-Voltage 1024-Bit EPROM PIN DESCRIPTION PIN NAME FUNCTION 1, 3 ... Dallas Semiconductor
Original
datasheet

17 pages,
214.16 Kb

J-STD-020A eprom crc DS25LV02R DS25LV02 DS2502 eprom circuit diagram TEXT
datasheet frame
Abstract: FM93C46 FM93C46 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous Bus) General Description Features FM93C46 FM93C46 is a 1024-bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device , Semiconductor International FM93C46 FM93C46 Rev. D.1 DATA OUT BUFFER 1 www.fairchildsemi.com FM93C46 FM93C46 1024-Bit , 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous Bus) Connection Diagram Operating , (Note 4) CS = VIL 3 FM93C46 FM93C46 Rev. D.1 www.fairchildsemi.com FM93C46 FM93C46 1024-Bit Serial CMOS ... Fairchild Semiconductor
Original
datasheet

13 pages,
111.77 Kb

MTC08 M08A FM93C46V FM93C46E FM93C46 93c46 fairchild 93C46 DATASHEET chip 8-pin 93C46 93c46 rotated TEXT
datasheet frame
Abstract: FM93C46 FM93C46 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous Bus) February 2000 FM93C46 FM93C46 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous Bus) General Description FM93C46 FM93C46 is a 1024-bit CMOS , Fairchild Semiconductor International FM93C46 FM93C46 Rev. B 1 www.fairchildsemi.com FM93C46 FM93C46 1024-Bit , www.fairchildsemi.com FM93C46 FM93C46 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous Bus) Absolute Maximum Ratings , FM93C46 FM93C46 Rev. B www.fairchildsemi.com FM93C46 FM93C46 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous ... Fairchild Semiconductor
Original
datasheet

13 pages,
104.9 Kb

93c46 rotated FM93C46 TEXT
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Abstract: MOS LSI TMS 4023 NC 1024-BIT RANDOM-ACCESS MEMORY features Low power dissipation Access time â , Wired-OR capability Inputs fully protected 24-iead plastic package description The TMS 4023 NC is a 1024-bit , 5012 . DALLAS. TEXAS 75222 TMS 4023 NC 1024-BIT RANDOM-ACCESS MEMORY functional block diagram and pin , BOX 5012 . DALLAS, TEXAS 75222 TMS 4023 NC 1024-BIT RANDOM-ACCESS MEMORY recommended operating , TMS 4023 NC 1024-BIT RANDOM-ACCESS MEMORY timing diagram and voltage waveforms 14 Texas Instruments ... OCR Scan
datasheet

5 pages,
187.13 Kb

1024-BIT TEXT
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Abstract: memory sections of the DS1982 DS1982. The DS1982 DS1982 has three main data components: 1) 64-bit lasered ROM, 2) 1024-bit , READ STATUS BYTE READ DATA/GENERATE 8-BIT CRC 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM 64-BIT 64-BIT LASERED ROM Figure 3 8-Bit CRC Code MSB 48- Bit Serial , DS1982 DS1982 1024-BIT EPROM The memory map in Figure 5 shows the 1024-bit EPROM section of the DS1982 DS1982 which , details for reading and programming the 1024-bit EPROM portion of the DS1982 DS1982 are given in the "Memory ... Dallas Semiconductor
Original
datasheet

24 pages,
688.35 Kb

DS9101 DS9096P DS9093RA DS9093F DS9092 DS1982-F5 DS1982-F3 DS1982 TEXT
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Abstract: has three main data components: 1) 64-bit lasered ROM, 2) 1024-bit EPROM, and 3) EPROM Status Bytes , MEMORY WRITE STATUS BYTE READ MEMORY READ STATUS BYTE READ DATA/GENERATE »-BIT CRC 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM J 64-BIT 64-BIT LASERED ROM , memory map in Figure 5 shows the 1024-bit EPROM section of the DS2502 DS2502 which is configured as four pages , programming the 1024-bit EPROM portion of the DS2502 DS2502 are given in the Memory Function Commands section ... OCR Scan
datasheet

22 pages,
366.52 Kb

DS2502 TEXT
datasheet frame
Abstract: ROM, 2) 1024-bit EPROM, and 3) EPROM Status Bytes. The device derives its power for read operations , /GENERATE 8-BIT CRC 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM , ) LSB MSB LSB 1-WIRE CRC GENERATOR Figure 4 5 of 23 DS1982 DS1982 1024-BIT EPROM The memory map in Figure 5 shows the 1024-bit EPROM section of the DS1982 DS1982 which is configured as four pages of 32 , ensures data integrity when programming the memory. The details for reading and programming the 1024-bit ... Dallas Semiconductor
Original
datasheet

25 pages,
447.28 Kb

DS1982 TEXT
datasheet frame
Abstract: has three main data compo nents: 1) 64-bit lasered ROM, 2) 1024-bit EPROM, and 3) EPROM Status Bytes , MEMORY FUNCTION CONTROL 8-BIT SCRATCHPAD ft-BITCRC GENERATOR 1024-BIT EPROM (4 PAGES OF 32 BYTES , BYTE READ MEMORY READ STATUS BYTE READ DATA/GENERATE 8-BIT CRC 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM 64-BIT 64-BIT LASERED ROM Figure 3 8-B it CRC Code MSB , INPUT 052594 4/21 28 O S1982 S1982 1024-BIT EPROM The memory map in Figure 5 shows the 1024-bit ... OCR Scan
datasheet

21 pages,
784.13 Kb

TEXT
datasheet frame
Abstract: -bit lasered ROM, 2) 1024-bit EPROM, and 3) EPROM Status Bytes. The device derives its power for read , MEMORY FUNCTION CONTROL 8-BIT SCRATCHPAD 8-BIT CRC GENERATOR 1024-BIT EPROM (4 PAGES OF 32 BYTES , MEMORY WRITE STATUS BYTE READ MEMORY READ STATUS BYTE READ DATA/GENERATE 8-BIT CRC 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM EPROM STATUS BYTES 1024-BIT EPROM 64-BIT 64-BIT LASERED ROM Figure 3 8 , Figure 4 INPUT 051794 4/21 255 DS2502 DS2502 1024-BIT EPROM The memory map in Figure 5 shows the ... OCR Scan
datasheet

21 pages,
772.29 Kb

DS2502 TEXT
datasheet frame
Abstract: MITSUBISHI LSIs M6M80011AP M6M80011AP,L,FP 1024-BIT(64-W0RD 64-W0RD BY 16-BIT 16-BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM DESCRIPTION The M6M80011 M6M80011 AP, L, FP are 1024-bit (64-word x 16-bit) electrically erasable , 1024-BIT(64-W0RD 64-W0RD BY 16-BIT 16-BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM FUNCTIONS M6M80011AP M6M80011AP is a , 002Ö104 4Tb 3-4 A MITSUBISHI ELECTRIC MITSUBISHI LSIs M 6M80011AP 6M80011AP, L, F P 1024-BIT(64-W0RD 64-W0RD BY 16 , 002Ô1G5 332 ■ . Jf MITSUBISHI ELECTRIC 3-5 MITSUBISHI LSIs M 6M80011AP 6M80011AP, L, F P 1024-BIT(64-W0RD 64-W0RD BY ... OCR Scan
datasheet

10 pages,
252.76 Kb

6M80 M6M80011AF M6M80011AP 8 bit hamming code SCK 108 M6M80011 M6M80011A BE4C16 M6M80011AFP M6M80011AL 1024-BIT 64-W0RD 16-BIT TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
latest 1024-bit flexible modular encryption unit, which can perform complex cryptography algorithms in with 1024-bit modular arithmetic co-processor, 20Kb ROM, 4Kb EEPROM, 896 bytes of RAM and an operating voltage of 3-5V. The 1024-bit modular encryption unit can also efficiently handle 512 and 786 bit keys.
/datasheets/files/motorola/cdcsic2/web/whatsnew/pressrls/pr961028.htm
Motorola 08/03/1998 11.09 Kb HTM pr961028.htm
latest 1024-bit flexible modular encryption unit, which can perform complex cryptography algorithms in with 1024-bit modular arithmetic co-processor, 20Kb ROM, 4Kb EEPROM, 896 bytes of RAM and an operating voltage of 3-5V. The 1024-bit modular encryption unit can also efficiently handle 512 and 786 bit keys.
/datasheets/files/motorola/web/whatsnew/pressrls/pr961028.htm
Motorola 10/02/1997 10.11 Kb HTM pr961028.htm
Cryptocomputers - with Modular ArtithmeticProcessor using up to 1024bit keys ST16CF54B ST16CF54B 16KB 4KB 5V ±
/datasheets/files/stmicroelectronics/stonline/prodpres/memory/flsc9707.htm
STMicroelectronics 06/02/1998 6.23 Kb HTM flsc9707.htm
) Exponentiator / multiplier - Accelerates Public Key operations - Average of 45 ms for 1024-bit
/datasheets/files/philips/pip/pip_2-v1.html
Philips 14/02/2002 5.04 Kb HTML pip_2-v1.html
45 ms for 1024-bit Synchronous SRAM interface Low power mode available Interrupt
/datasheets/files/philips/pip/pip_2.html
Philips 24/04/2003 3.35 Kb HTML pip_2.html
SY10/100/101422 SY10/100/101422 256 x 4 ECL RAM SY10/100/101422 SY10/100/101422 256 x 4 ECL RAM General Description The High-Bandwidth SY10/100/101422 SY10/100/101422 are 1024-bit Random Access Memories (RAMs), designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized as 256-words-by-4-bits and meet the standard 10K/100K 10K/100K family signal levels. The SY100422 SY100422 is also supply
/datasheets/files/micrel/products/products/sy10-100101422.html
Micrel 26/06/2002 7.31 Kb HTML sy10-100101422.html
EEPROM, 24kbytes user ROM, 960bytes user RAM and 1024bit public key capability. The first major
/datasheets/files/stmicroelectronics/stonline/press/news/143bm.htm
STMicroelectronics 06/02/1998 8.49 Kb HTM 143bm.htm
RSA 512-bit keys and the MD5 hash algorithm, or DSA 1024-bit keys and the SHA-1 hash algorithm.
/datasheets/files/intel/ial/wfm/wfm20/design/bis/bisstep.htm
Intel 12/11/1998 18.57 Kb HTM bisstep.htm
of keys creation, 512- to 1024-bit exponentiation. In addition, new algorithms can be
/datasheets/files/atmel/atmel/prod21a-v2.htm
Atmel 30/01/2000 33.88 Kb HTM prod21a-v2.htm
less than 500ms for 1024-bit RSA without Chinese Remainder Theorem. Top
/datasheets/files/stmicroelectronics/stonline/press/news/year1999/x587m.htm
STMicroelectronics 31/05/2000 9.83 Kb HTM x587m.htm