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1 - 41 of about 41 for 102-140 |
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First line: perm-o-pads TO-18 T-13 / 32 5mm Mounts Universal TO-5 TO-18 T-13 / 4 5mm Mounts Material Abstract: .. 102-140 .140 3.6 .030 .76 .055 1.4 102-150 .150 3.8 .030 .76 .060 1.5 102-160 .160 4.1 .030 .76 .065 1.7 102-170 .170 4.3 .030 .76 .070 1.8 102-180 .180 4.6 .030 .76 .. datasheet abstract.. |
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First line: Abstract: .. 220 102 140 3200 2750 51000 37800 200 50 50 500 500 500 50 B: c*: L: 1000 500 V A A A A A A’s VT max. 30 mA max. B*: max. 10 D: max. 15 max. max. max. max. max. max. max. v v 150 mA 2 v 10 mA V 250 .. datasheet abstract.. |
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First line: Abstract: .. 220 102 140 3200 2750 51000 37800 200 50 50 500 500 500 50 B: c*: L: 1000 500 V A A A A A A’s VT max. 30 mA max. B*: max. 10 D: max. 15 max. max. max. max. max. max. max. v v 150 mA 2 v 10 mA V 250 .. datasheet abstract.. |
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First line: SPICE Device Model SUP90P06-09L Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS P-Channel Abstract: .. Turn-Off Delay Time c td off 102 140. Fall Time c tf. VDD = −30 V, RL = 0.33 Ω ID ≅ −90 A, VGEN = −10 V, RG = 2.5 Ω. 352 300. ns. Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not .. datasheet abstract.. |
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First line: AOA400 N-Channel Enhancement Mode Field Effect Transistor General Description AOA400 uses advanced Abstract: .. 102 140 mΩ. gFS 8 S. VSD 0.8 1 V. IS 1.5 A. Ciss 390 pF. Coss 54.5 pF. Crss 41 pF. Rg 8 Ω. Qg 4.2 nC. Qgs 0.56 nC. Qgd 1.4 .. datasheet abstract.. |
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First line: April FDP603AL FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Abstract: .. Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω 102 140 nS. tD off Turn - Off Delay Time 20 36 nS. tf. Turn - Off Fall Time 80 115 nS. Qg Total Gate Charge VDS = 10 V. ID = 25 A, VGS = 10 V. 19 26 nC. Qgs Gate-Source Charge 3.5 .. datasheet abstract.. |
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First line: April FDP603AL FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Abstract: .. Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω 102 140 nS. tD off Turn - Off Delay Time 20 36 nS. tf. Turn - Off Fall Time 80 115 nS. Qg Total Gate Charge VDS = 10 V. ID = 25 A, VGS = 10 V. 19 26 nC. Qgs Gate-Source Charge 3.5 .. datasheet abstract.. |
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First line: BSH108 N-channel enhancement mode field-effect transistor Rev. October M3D088 Product specification Description Abstract: .. VGS = 5 V; I D = 1 A 102 140 mΩ. Table 3: Limiting values In accordance with the Absolute Maximum Rating System IEC 60134 . Symbol Parameter Conditions Min Max Unit. VDS drain-source voltage DC Tj .. datasheet abstract.. |
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First line: CHOKE COILS Choke Coils Construction Shrinkable tube Features coils used choke coils Abstract: .. 6?7?8?9?12?14?16?18?24?30?39?46?54?76?92?102?140?150?162 LHB0812 DCR? Ω Max. I A ?Max. f Hz 公称?インダクタンス Nominal?Inductance? μH 許容 .. datasheet abstract.. |
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First line: BUK75 / 7626-100B TrenchMOS standard level Rev. April Product data Product profile Description N-channel Abstract: .. Crss reverse transfer capacitance - 102 140 pF. td on turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS = 10 V; R G = 10Ω. - 21 - ns. tr rise time - 40 - ns. td off turn-off delay time - 47 - ns. tf fall time - 19 - ns. Ld .. datasheet abstract.. |
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First line: BUK7227-100B TrenchMOS standard level M3D300 Rev. January Product data Product profile Description Abstract: .. Crss reverse transfer capacitance - 102 140 pF. td on turn-on delay time VDS = 25 V; RL = 1.0 Ω; VGS = 10 V; R G = 10Ω. - 18 - nS. tr rise time - 99 - nS. td off turn-off delay time - 50 - nS. tf fall time - 20 - nS. Ld .. datasheet abstract.. |
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First line: BUK7226-100B TrenchMOS standard level M3D300 Rev. December Objective data Product profile Description Abstract: .. Crss reverse transfer capacitance - 102 140 pF. td on turn-on delay time VDS = 25 V; RL = 1.0 Ω; VGS = 10 V; R G = 10Ω. - 18 - nS. tr rise time - 99 - nS. td off turn-off delay time - 50 - nS. tf fall time - 20 - nS. Ld .. datasheet abstract.. |
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First line: Agilent HFCT-5981ATL Single Mode Laser Transceiver Gb / s Gigabit Ethernet iSCSI applications Data Abstract: .. Supply Current ICCRX 102 140 mA. Receiver Power Dissipation PDISS 336 490 mW. Data Output Voltage Swing single-ended VOH - VOL 575 930 mV 1. Data Output Rise Time tr 0.40 ns 2. Data Output Fall Time tf .. datasheet abstract.. |
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First line: AMMC-5024 Data Sheet Traveling Wave Amplifier Description AvagoTechnologiesAMMC-5024isabroadbandPHEMT GaAsMMICTWAdesignedformediumoutputpowerand highgainoverthefull30KHzto40GHzfrequency range.Thedesignemploysa9-stagecascade-connected FETstructuretoensureflatgainandpoweraswellasuniformgroupdelay.E-beamlithographyisusedtoproduce Abstract: .. 8 -19.505 0.106 163.170 15.636 6.051 2.105 -41.197 0.009 102.140 -21.619 0.083 -28.987. 9 -22.752 0.073 163.190 15.679 6.081 -19.628 -39.902 0.010 80.129 -20.245 0.097 -47.192. 10 -25.795 0.051 .. datasheet abstract.. |
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First line: AMMC-5024 Traveling Wave Amplifier Data Sheet Description Agilent AMMC-5024 broadband PHEMT GaAs Abstract: .. 8 -19.505 0.106 163.170 15.636 6.051 2.105 -41.197 0.009 102.140 -21.619 0.083 -28.987. 9 -22.752 0.073 163.190 15.679 6.081 -19.628 -39.902 0.010 80.129 -20.245 0.097 -47.192. 10 -25.795 0.051 .. datasheet abstract.. |
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First line: Agilent AMMC-5024 Traveling Wave Amplifier Data Sheet Features Wide frequency range High Abstract: .. 8 -19.505 0.106 163.170 15.636 6.051 2.105 -41.197 0.009 102.140 -21.619 0.083 -28.987. 9 -22.752 0.073 163.190 15.679 6.081 -19.628 -39.902 0.010 80.129 -20.245 0.097 -47.192. 10 -25.795 0.051 .. datasheet abstract.. |
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First line: Agilent HFCT-59L1ATL Single Mode Laser Transceivers Gigabit Ethernet Fibre Channel Applications Gb / s Abstract: .. Supply Current ICCRX 102 140 mA. Receiver Power Dissipation PDISS 336 490 mW. Data Output Voltage Swing single-ended VOH - VOL 575 930 mV 1. Data Output Rise Time tr 0.40 ns 2. Data Output Fall Time tf .. datasheet abstract.. |
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First line: HFCT-59L1ATLZ RoHS compliant Single Mode Laser Transceivers Gigabit Ethernet Fibre Channel Applications Abstract: .. Supply Current ICCRX 102 140 mA. Receiver Power Dissipation PDISS 336 490 mW. Data Output Voltage Swing single-ended VOH - VOL 575 930 mV 1. Data Output Rise Time tr 0.40 ns 2. Data Output Fall Time tf .. datasheet abstract.. |
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First line: MOTOROLA Freescale Semiconductor Inc. Order this document SEMICONDUCTOR APPLICATION NOTE Optical Character Abstract: .. 139 112 99 132 124 110 138 79 194 149 102 140 177 84. SOP hi 167 130 113 146 142 125 174 91 201 159 123 158 190 88. SOP avg 153 121 107 137 135 119 150 84 197 154 111 148 182 86. OCR FUZ SOP. 0 220 200 180 160 140 120 .. datasheet abstract.. |
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First line: MOTOROLA Order this document SEMICONDUCTOR APPLICATION NOTE Optical Character Recognition Using Fuzzy Abstract: .. 139 112 99 132 124 110 138 79 194 149 102 140 177 84. SOP hi 167 130 113 146 142 125 174 91 201 159 123 158 190 88. SOP avg 153 121 107 137 135 119 150 84 197 154 111 148 182 86. OCR FUZ SOP. 0 220 200 180 160 140 120 .. datasheet abstract.. |
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First line: Freescale Semiconductor Order this document Optical Character Recognition Using Fuzzy Logic William Abstract: .. 139 112 99 132 124 110 138 79 194 149 102 140 177 84. SOP hi 167 130 113 146 142 125 174 91 201 159 123 158 190 88. SOP avg 153 121 107 137 135 119 150 84 197 154 111 148 182 86. OCR FUZ SOP. 0 220 200 180 160 140 120 .. datasheet abstract.. |
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First line: Power Semiconductors Transistors IGBTs Duo-Packs FREDs Fast IGBTs S-FET SO-8 D-PAK I-PAK Abstract: .. 130 50.0 BYP 102 140 75.0 BYP 103 1200 55 6.5 BYP 300 100 20.0 BYP 301 140 40.0 BYP 302 150 60.0 BYP 303 DUO PACK TO-218 V CE [V] I C [A]Type 600 36.0 BUP 602D 42.0 BUP 603D 1200 12.0 BUP 305D 21.0 .. datasheet abstract.. |
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First line: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11035-1E MEMORY CMOS SYNCHRONOUS DYNAMIC MB81F16822B-75 / -102 / -10 CMOS Banks Abstract: .. mA MB81F16822B-102 140. MB81F16822B-10 120. Precharge Standby Current Power Supply Current ICC2P. CKE = VIL, All banks idle, tCK = min, Power down mode, 0 V ≤ V IN ≤ V CC. — 400. μA. ICC2PS. CKE = VIL , All .. datasheet abstract.. |
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First line: Lineup Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11035-2E MEMORY CMOS SYNCHRONOUS DYNAMIC MB81F16822B-75 / -102 / -103 Abstract: .. mA MB81F16822B-102 140. MB81F16822B-103 130. Precharge Standby Current Power Supply Current ICC2P. CKE = VIL, All banks idle, tCK = min, Power down mode, 0 V ≤ V IN ≤ V CC. — 400. μA. ICC2PS. CKE = VIL , All .. datasheet abstract.. |
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First line: ISL59450 Data Sheet February FN7510.0 Multiformat Video Crosspoint with Integrated Sync Separator Abstract: .. 60 102 140 mA. VIN = 0V, Sinking, RL = 10Ω to +3V 20 30 40 mA. VOUT-LIN Output Linear Voltage Range 0.5 2.5 V. LOGIC INPUTS SDA, SCL, Address, Reset, PowerDown, HSYNCINx, VSYNCINx, SDETx VIH Input High .. datasheet abstract.. |
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First line: CK97 Clock Synthesizer Design Guidelines June Order Number 243867-001 Information this document Abstract: .. 0.8 63 102 140. 0.9 69 112 154. 1 74 119 166. 1.1 77.9 126 176. 1.2 81 134 186. 1.3 82.7 138 194. 1.4 85.6 142 .. datasheet abstract.. |
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First line: Preliminary Datasheet MICRONAS 323xD Comb Filter Video Processor Edition July 6251-472-1PD Abstract: .. IVSUPD Current Consumption VSUPD ‐ 102 140 mA. IVSTDBY Current Consumption VSTDBY ‐ 1 ‐ mA. IL Input / Output Leakage Current All I/O Pins ‐1 ‐ 1 μA. Symbol Parameter Pin Name Min. Typ. Max. Unit Test Conditions .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 112, 140. 120, 140. 112, 140. 120, 140. 112, 140. 121, 140. 90, 138. 90, 138. 90, 138. 121, 138. 111 .. 102, 140. 91, 140. 98, 140. 100, 140. 124, 140. 104, 140. 104, 140. 109, 140. 122, 140. Mnemonic. NOP. POF. EPOF .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 112, 140. 121, 140. 113, 140. 121, 140. 113, 140. 121, 140. A-D operation. Serial I/O operation .. 102, 140. 93, 140. 125, 140. 104, 140. Skip condition Number of cycles. Number of words. Instruction .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 112, 140. 120, 140. 112, 140. 120, 140. 112, 140. 121, 140. 90, 138. 90, 138. 90, 138. 121, 138. 111 .. 102, 140. 91, 140. 98, 140. 100, 140. 124, 140. 104, 140. 104, 140. 109, 140. 122, 140. Mnemonic. NOP. POF. EPOF .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 112, 140. 121, 140. 113, 140. 121, 140. 113, 140. 121, 140. A/D operation. Serial I/O operation .. 102, 140. 93, 140. 125, 140. 104, 140. Skip condition Number of cycles. Number of words. Instruction .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 112, 140. 120, 140. 112, 140. 120, 140. 112, 140. 121, 140. 90, 138. 90, 138. 90, 138. 121, 138. 111 .. 102, 140. 91, 140. 98, 140. 100, 140. 124, 140. 104, 140. 104, 140. 109, 140. 122, 140. Mnemonic. NOP. POF. EPOF .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 112, 140. 120, 140. 112, 140. 120, 140. 112, 140. 121, 140. 90, 138. 90, 138. 90, 138. 121, 138. 111 .. 102, 140. 91, 140. 98, 140. 100, 140. 124, 140. 104, 140. 104, 140. 109, 140. 122, 140. Mnemonic. NOP. POF. EPOF .. datasheet abstract.. |
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First line: ST7DALI 8-BIT WITH SINGLE VOLTAGE FLASH MEMORY DATA EEPROM TIMERS DALI Memories Abstract: .. 102/140. 13.3 OPERATING CONDITIONS. 13.3.1 General Operating Conditions: Suffix 6 Devices. TA = -40 to +85°C unless otherwise specified. Figure 55. fCLKIN Maximum Operating Frequency Versus .. datasheet abstract.. |
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First line: Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER REJ03B0007-0200Z Rev.2.00 DESCRIPTION Group 4-bit single-chip microcomputer Abstract: .. 102, 140. 103, 140. 108, 140. 115, 140. 123, 140. 115, 140. 124, 140. 113, 142. 122, 142. 114, 142. 122, 142. 114 .. datasheet abstract.. |
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First line: ST72104G ST72215G ST72216G ST72254G 8-BIT WITH SINGLE VOLTAGE FLASH MEMORY 16-BIT TIMERS Abstract: .. 102/140. 14.4 SUPPLY CURRENT CHARACTERISTICS. The following current consumption specified for the ST7 functional operating modes over tempera-ture range does not take into account the clock .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 140. 103, 140. 108, 140. 115, 140. 123, 140. 115, 140. 124, 140. 113, 142. 122, 142. 114, 142. 122, 142. 114 .. datasheet abstract.. |
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First line: ST72323 3V / 5V RANGE 8-BIT WITH 4 / 8K 10-BIT TIMERS PRELIMINARY DATA Memories 4 / 8K Abstract: .. 102/140. CLOCK AND TIMING CHARACTERISTICS Cont’d Notes: 1. Resonator characteristics given by the ceramic resonator manufacturer. 2. SMD = [-R0: Plastic tape package ∅ =180mm , -B0: Bulk .. datasheet abstract.. |
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First line: ST72104G ST72215G ST72216G ST72254G 8-BIT WITH SINGLE VOLTAGE FLASH MEMORY 16-BIT TIMERS Abstract: .. 102/140. 14.4 SUPPLY CURRENT CHARACTERISTICS. The following current consumption specified for the ST7 functional operating modes over tempera-ture range does not take into account the clock .. datasheet abstract.. |
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First line: REJ09B0175-0100Z Group Users Manual RENESAS 4-BIT CISC SINGLE-CHIP MICROCOMPUTER FAMILY SERIES Before Abstract: .. 102, 140. 103, 140. 108, 140. 115, 140. 123, 140. 115, 140. 124, 140. 113, 142. 122, 142. 114, 142. 122, 142. 114 .. datasheet abstract.. |
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First line: Futurebus+ Interface Family Data Manual Protocol Arbitration Backplane Transceiver Logic SLLD002 February Abstract: .. td1 Delay time, DATA_AV*Ο to start bit of AD<31:0> 65 102 140 ns. td2 Delay time, DSO= to start bit of AD<31:0> 54 84 104 ns. td3 Delay time, DIIΟ to DSOΟ 14 27 45 ns. D‐71. D‐71. AD <31:0> ASO. ADDRV* CM <7:0> .. datasheet abstract.. |
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