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1 - 50 of about 58 for 102-130 |
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First line: Type Field Effect Transistor 2SJ598 Features on-resistance RDS on 1 RDS on 2 MAX. VGS =-10 Abstract: .. VGS=-10V,ID=-6A 102 130 m. VGS=-4.0V,ID=-6A 131 190 m. Input capacitance Ciss 720 pF. Output capacitance Coss 150 pF. Reverse transfer capacitance Crss 50 pF. Turn-on delay time td on 70 ns. Rise time .. datasheet abstract.. |
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First line: perm-o-pads TO-18 T-13 / 32 5mm Mounts Universal TO-5 TO-18 T-13 / 4 5mm Mounts Material Abstract: .. 102-130 .130 3.3 .030 .76 .050 1.3 102-140 .140 3.6 .030 .76 .055 1.4 102-150 .150 3.8 .030 .76 .060 1.5 102-160 .160 4.1 .030 .76 .065 1.7 102-170 .170 4.3 .030 .76 .070 .. datasheet abstract.. |
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First line: Micro Commercial Components SDB151 THRU SDB157 Single Phase Abstract: .. 102 .130 2.60 3.30. D .360 .410 9.40 10.4. G .003 .013 .076 .330. H .195 .205 5.00 5.20. K .038 .047 1.00 1.20. x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0. www.mccsemi .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES UT3403 P-CHANNEL ENHANCEMENT MODE DESCRIPTION UT3403 P-channel enhancement mode Power Abstract: .. VGS=-10V, ID=-2.6A 102 130 mΩ. VGS=-4.5V, ID=-2A 128 180 mΩ Drain-Source On-State Resistance Note. 2 RDS ON VGS=-2.5V, ID=-1A 187 260 mΩ. DYNAMIC PARAMETERS Input Capacitance CISS 409 500 pF .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES UT3403 P-CHANNEL ENHANCEMENT MODE DESCRIPTION UT3403 P-channel enhancement mode Power Abstract: .. VGS=-10V, ID=-2.6A 102 130 mΩ. VGS=-4.5V, ID=-2A 128 180 mΩ Drain-Source On-State Resistance Note. 2 RDS ON VGS=-2.5V, ID=-1A 187 260 mΩ. DYNAMIC PARAMETERS Input Capacitance CISS 409 500 pF .. datasheet abstract.. |
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First line: HMC758LP3 758LP3E v00.1108 GaAs PHEMT NOISE AMPLIFIER Features Noise Figure Gain Output Abstract: .. Supply Current Idd 80 102 130 80 102 130 190 227 260 190 227 260 mA. * R1 & R2 resistors set current, see application circuit herein. The HMC758LP3 E is a GaAs PHEMT MMIC Low Noise Amplifi er that is .. datasheet abstract.. |
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First line: AO3403 P-Channel Enhancement Mode Field Effect Transistor General Description AO3403 / L uses advanced Abstract: .. 102 130. TJ=125°C 154 200. 128 180 mΩ. 187 260 mΩ. gFS 3 4.5 S. VSD -0.85 -1 V. IS -2 A. Ciss 409 500 pF. Coss 55 pF .. datasheet abstract.. |
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First line: AO3403 P-Channel Enhancement Mode Field Effect Transistor General Description AO3403 uses advanced Abstract: .. 102 130. TJ=125°C 154 200. 128 180 mΩ. 187 260 mΩ. gFS 3 4.5 S. VSD -0.85 -1 V. IS -2 A. Ciss 409 500 pF. Coss 55 pF .. datasheet abstract.. |
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First line: Preliminary Datasheet FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION Abstract: .. Drain to Source On-state Resistance RDS on 1 VGS = –10 V, ID = –6 A 102 130 mΩ. RDS on 2 VGS = –4.0 V, ID = –6 A 131 190 mΩ. Input Capacitance Ciss VDS = –10 V, 720 pF. Output Capacitance Coss VGS = 0 V, 150 pF .. datasheet abstract.. |
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First line: AO4441 P-Channel Enhancement Mode Field Effect Transistor General Description AO4441 uses advanced Abstract: .. 102 130 mΩ. gFS 10 S. VSD -0.77 -1 V. IS -4 A. Ciss 930 1120 pF. Coss 85 pF. Crss 35 pF. Rg 7.2 9 Ω. Qg 10V 16 20 nC .. datasheet abstract.. |
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First line: ACEX Devices Low-Cost Solutions High Volume Applications December look-up table LUT -based ACEX Abstract: .. 60, 102, 130, 130. 102, 147, 171. 102, 147, 186, 249. 147, 186, 333. 2.5 V. 2.5 V. 2.5 V. 2.5 V. 12,288. 24,576 .. datasheet abstract.. |
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First line: ZL40815 10GHz Fixed Modulus Data Sheet Features Very High Operating Speed Operation Abstract: .. Supply current 8 102 130 mA Divider and output stages. Input frequency 2,3 2 11 GHz RMS sinewave, see Note 1. Input sensitivity 2,3 -8 dBm fin = 1GHz to 2GHz. Input sensitivity 2,3 -15 -10 dBm fin = 2GHz .. datasheet abstract.. |
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First line: Noise Packaged GaAs MESFET Chips AFM02N6-212 AFM02N6-213 Features Noise Figure High Associated Abstract: .. 4 0.845 -83.210 2.825 102.130 0.101 35.450 0.420 -67.780 0.442 9.020 14.467. 5 0.800 -99.170 2.627 86.860 0.115 25.590 0.400 -79.280 0.537 8.389 13.588. 6 0.742 -112.930 2.464 73.360 0.126 17.190 .. datasheet abstract.. |
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First line: Datasheet FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER DESCRIPTION 2SJ598 P-channel Abstract: .. Drain to Source On-state Resistance RDS on 1 V GS = –10 V, ID = –6 A 102 130 mΩ. R DS on 2 V GS = –4.0 V, ID = –6 A 131 190 mΩ. Input Capacitance Ciss V DS = –10 V 720 pF. Output Capacitance Coss V GS = 0 V 150 pF. Reverse .. datasheet abstract.. |
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First line: Vishay Draloric Vitreous Wirewound Resistors FEATURES welded construction Ceramic core RoHS COMPLIANT Abstract: .. RW301020 RW 30 x 102 130. 1600. 2R7 - 22R 10 E 12. 24R - 160K 10 E 12. 24R - 160K 5 E 24. RW301021 RW 30 x 102 E 80 .. datasheet abstract.. |
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First line: ZL40815 10GHz Fixed Modulus Data Sheet Features Very High Operating Speed Operation Abstract: .. Supply current 8 102 130 mA Divider and output stages. Input frequency 2,3 2 11 GHz RMS sinewave see Note 1 Input sensitivity 2,3 -8 dBm fin = 1 GHz to 2 GHz. Input sensitivity 2,3 -15 -10 dBm fin = 2 GHz .. datasheet abstract.. |
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First line: Datasheet FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER DESCRIPTION 2SJ598 P-channel Abstract: .. Drain to Source On-state Resistance RDS on 1 VGS = –10 V, ID = –6 A 102 130 mΩ. RDS on 2 VGS = –4.0 V, ID = –6 A 131 190 mΩ. Input Capacitance Ciss VDS = –10 V 720 pF. Output Capacitance Coss VGS = 0 V 150 pF. Reverse .. datasheet abstract.. |
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First line: ZL40815 10GHz Fixed Modulus Data Sheet Features Very High Operating Speed Operation Abstract: .. Supply current 8 102 130 mA Divider and output stages. Input frequency 2,3 2 11 GHz RMS sinewave see Note 1 Input sensitivity 2,3 -8 dBm fin = 1GHz to 2GHz. Input sensitivity 2,3 -15 -10 dBm fin = 2GHz .. datasheet abstract.. |
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First line: Vishay Draloric Vitreous Wirewound Resistors FEATURES welded construction Ceramic core Models acc. Abstract: .. RW 30/102 130. RW 30/102 E 80. RW 30/152 220. RW 30/152 E 130. RW 30/203 300. RW 30/203 E 180. RW 30/267 400 .. datasheet abstract.. |
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First line: CS4124 Preliminary CS4124 High Side Controller Description CS4124 monolithic integrated circuit designed Abstract: .. IADJ = 4V and RCS1 = 51Ω 102 130 mV. IADJ Input Current 4V ≤ VCC ≤ 26V -2 0.3 2 μA. IADJ = 0V to 5V. Linear Regulator Output Voltage, VREG VCC = 4V 2.0 V. VCC = 13.2V 4.85 5.15 V. VCC = 26V 4.85 5.20 V. Inhibit Inhibit .. datasheet abstract.. |
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First line: ZL40815 10GHz Fixed Modulus Data Sheet Features Very High Operating Speed Operation Abstract: .. Supply current 8 102 130 mA Divider and output stages. Input frequency 2,3 2 11 GHz RMS sinewave, see Note 1. Input sensitivity 2,3 -8 dBm fin = 1GHz to 2GHz. Input sensitivity 2,3 -15 -10 dBm fin = 2GHz .. datasheet abstract.. |
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First line: ZL40815 10GHz Fixed Modulus Data Sheet Features Very High Operating Speed Operation Abstract: .. Supply current 8 102 130 mA Divider and output stages. Input frequency 2,3 2 11 GHz RMS sinewave, see Note 1. Input sensitivity 2,3 -8 dBm fin = 1GHz to 2GHz. Input sensitivity 2,3 -15 -10 dBm fin = 2GHz .. datasheet abstract.. |
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First line: Freescale Semiconductor Inc. Freescale Semiconductor Characterizing CMOS Core Current Low-Power Applications Abstract: .. GSM MOT 75 102 130 76 105 134 60 85 108 83 118 147 52 68 86 116. IIR 76 104 132 78 105 134 64 85 106 85 115 148 52 70 84 114. LMS 90 123 160 92 125 160 75 101 130 100 140 175 60 80 100 140. SSFIR 80 110 140 84 110 144 68 90 .. datasheet abstract.. |
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First line: Characterizing CMOS Core Current Low-Power Applications Application Note David DiCarlo AN2013 / D Rev. Abstract: .. GSM MOT 75 102 130 76 105 134 60 85 108 83 118 147 52 68 86 116. IIR 76 104 132 78 105 134 64 85 106 85 115 148 52 70 84 114. LMS 90 123 160 92 125 160 75 101 130 100 140 175 60 80 100 140. SSFIR 80 110 140 84 110 144 68 90 .. datasheet abstract.. |
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First line: Preliminary Technical Data FEATURES Bi-directional Communication Open-drain interfaces Suitable hot-swap applications current Abstract: .. Side 1-to-Side 2, Rising Edge2 t PLH12 102 130 ns. Side 1-to-Side 2, Falling Edge3 t PHL12 210 275 ns. Side 2-to-Side 1, Rising Edge4 t PLH21 49 70 ns. Side 2-to-Side 1, Falling Edge5 t PHL21 105 155 ns. 3V .. datasheet abstract.. |
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First line: July AO4609 Complementary Enhancement Mode Field Effect Transistor General Description AO4609 uses Abstract: .. 102 130. TJ=125°C 154 200. 128 180 mΩ. 187 260 mΩ. gFS 3 4.5 S. VSD -0.85 -1 V. IS -2 A. Ciss 409 pF. Coss 55 pF .. datasheet abstract.. |
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First line: Preliminary Technical Data FEATURES Bi-directional Communication Open-drain interfaces Suitable hot-swap applications current Abstract: .. Side 1-to-Side 2, Rising Edge2 t PLH12 102 130 ns. Side 1-to-Side 2, Falling Edge3 t PHL12 210 275 ns. Side 2-to-Side 1, Rising Edge4 t PLH21 49 70 ns. Side 2-to-Side 1, Falling Edge5 t PHL21 105 155 ns. 3V .. datasheet abstract.. |
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First line: ACULED VHL ACL01-SC-RRRR-007-C01-L-0000 ACULED Very High Lumen delivers outstanding brightness improved luminous Abstract: .. Red 102 130 36. Table 1: Intensity Bins Board temperature T B = 25° C; I F = 700 mA. Luminous Flux ΦV [lm] Rank Min. Max. N 64 102. O 81 128. P 102 161. Q 128 203. R 161 256. Table 2: Wavelength Bins Board temperature .. datasheet abstract.. |
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First line: OPA333A-EP OPA2333A-EP SGLS383B APRIL REVISED JUNE 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIERS Abstract: .. CMRR V – – 0.1 V < V CM < V+ + 0.1 V 102 130 dB Ratio INPUT CAPACITANCE. Differential 2 pF. Common mode 4 pF. OPEN-LOOP GAIN. V – + 100 mV < V O < V+ – 100 mV, Open-loop voltage gain A OL 104 130 dB R L = 10 k Ω FREQUENCY .. datasheet abstract.. |
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First line: Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features Operates Over Wide Abstract: .. 3.75 0.86 136 -1.7 0.82 105 -19.8 0.102 130 0.50 -7. 4.00 0.87 134 -2.5 0.75 131 -19.5 0.106 159 0.52 48. 4.25 0.88 132 -3.3 0.68 157 -19.3 0.108 -172 0.56 105. 4.50 0.89 130 -4.0 0.63 -176 -19.1 0.111 -142 .. datasheet abstract.. |
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First line: Ricoh Company Ltd. Consolidated Subsidiaries INTERIM REPORT Consolidated. Half year ended September Abstract: .. .. -126,484 -102,130 -24,354 23.8 -104,415. Corporate assets .. .. 399,391 448,155 -48 .. datasheet abstract.. |
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First line: Premium cable ties with steel locking barb Characteristics Special features Ty-Rap programme Abstract: .. TYP28MX 360 4.8 1.1 3.5 - 102 130 1000 WT193A, TR227. TYP27MX 340 7.0 1.6 6 - 90 270 500 L-500-EU, ERG297. Ordering Information: Polypropylene weatherable cable ties. Technical Information. Material .. datasheet abstract.. |
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First line: Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features Operates Over Wide Abstract: .. 3.75 0.86 136 -1.7 0.82 105 -19.8 0.102 130 0.50 -7. 4.00 0.87 134 -2.5 0.75 131 -19.5 0.106 159 0.52 48. 4.25 0.88 132 -3.3 0.68 157 -19.3 0.108 -172 0.56 105. 4.50 0.89 130 -4.0 0.63 -176 -19.1 0.111 -142 .. datasheet abstract.. |
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First line: Plug / Cable Receptacle Panel Receptacle Wall Wall Connector Cable Inlet Panel Inlet Abstract: .. 5 63 170 118 177 ‐ ‐ ‐ ‐6 ‐ ‐ 6 213 102 130 25° 3xM32. 5 125 260 165 213 ‐ ‐ ‐ ‐8.1 ‐ ‐ 9 296 141 210 20° 2xM40. 4 16 125 90 132 10 ‐ 68 ‐ 5.3 ‐ ‐ 4 169 ‐ ‐ 25° 3xM25. 4 32 125 90 150 10 ‐ 68 ‐ 5.3 ‐ ‐ 4 176 ‐ ‐ 25° 3xM25. 4 63 170 118 177 .. datasheet abstract.. |
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First line: HYB25D128400 / 800 / 160AT L 128-Mbit Double Data Rate SDRAM Features Latency Frequency Latency Maximum Operating Abstract: .. 65 95 84 110 102 130 mA 1, 2. IDD5 Auto-Refresh Current : t RC = t RFC MIN, distributed refresh 142 180 153 190 161 205 mA 1, 2. IDD6. Self-Refresh Current : CKE ≤ 0.2V; external clock on; tCK = t CK MIN standard .. datasheet abstract.. |
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First line: Application Note Virtex-II Series Power Distribution System PDS Design Using Bypass / Decoupling Capacitors Abstract: .. 4, 102 130 225, 35. 2, 51 65 450, 70. 1, 25 32 900, 140. 8 www.xilinx.com XAPP623 v2.1 February 28 .. datasheet abstract.. |
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First line: Virtex-4 FPGA Designers Guide UG072 June Xilinx disclosing this user guide manual Abstract: .. 4, 102 130 225, 35. 2, 51 65 450, 70. 1, 25 32 900, 140. Virtex-4 FPGA PCB Designer’s Guide www.xilinx.com 37. UG072 1.2 June 24, 2008. Basic Decoupling Network Principles. R. plane tends to carry the majority .. datasheet abstract.. |
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First line: Fourth Quarter News Views Newsletter Altera Customers Programmable Solutions Company Quartus Version Abstract: .. 66, 102, 130, 130. 102, 147, 171. 102, 147, 186, 249. 147, 186, 333. 2.5 V. 2.5 V. 2.5 V. 2.5 V. 12,288. 24,576 .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 130. 117, 130. 117, 130. 102, 130. 99, 132. 99, 132. 99, 132. 99, 132. 89, 132. 91, 132. 89, 132. 92, 132. 89 .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 130. 117, 130. 117, 130. 102, 130. 99, 132. 99, 132. 99, 132. 99, 132. 89, 132. 91, 132. 89, 132. 92, 132. 89 .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 130. 117, 130. 117, 130. 102, 130. 99, 132. 99, 132. 99, 132. 99, 132. 89, 132. 91, 132. 89, 132. 92, 132. 89 .. datasheet abstract.. |
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First line: PRELIMINARY Notice This final specification. Some parametric limits subject change. Group SINGLE-CHIP Abstract: .. 102, 130. 117, 130. 117, 130. 102, 130. 99, 132. 99, 132. 99, 132. 99, 132. 89, 132. 91, 132. 89, 132. 92, 132. 89 .. datasheet abstract.. |
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First line: ACEX Programmable Logic Family Data Sheet April ver. Features.. Preliminary Information Programmable Abstract: .. 102 130 130 130. 5 EP1K30 102 147 171 171. 5 EP1K50 102 147 186 249. EP1K100 147 186 333. Table 3 .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA1000 Product Description Motorola Programmable Array MPA products Abstract: .. R 151 I/O 102 130 J14. R 152 I/O 101 131 J16. R 153 I/O Clk 100 132 H16. 154 Int Vss 99 133 VSSI. 155 5V Int Vdd 98 134 VDDI. R 156 I/O Clk 97 135 H17. R 157 I/O 96 136 H15. R 158 I/O 95 137 G17. R 159 I/O 94 138 G16. R 160 I/O 93 .. datasheet abstract.. |
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First line: Datasheet Rev. Jan. HYB25D128400AT L - 6 / 7 / 8 HYB25D128800AT L - 6 / 7 / 8 HYB25D128160AT L - 6 / 7 / 8 Mbit Double Data Rate SDRAM Abstract: .. IDD4W 65 95 84 110 102 130 mA 3 IDD5 142 180 153 190 161 205 mA 3 IDD6 standard. version. 1.9 2.5 1.9 2.5 1.9 2.5 mA 5 low power version 0.9 1.0 0.9 1.0 0.9 1.0 mA. IDD7 2160 2240 2430 2520 2440 2600 mA 4 HYB25D128 .. datasheet abstract.. |
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First line: News Views Second Quarter Newsletter Altera Customers Excalibur Solutions Altera Announces Nios Abstract: .. 66, 102, 130, 130. 102, 147, 171. 102, 147, 186, 249. 147, 186, 333. 2.5 V. 2.5 V. 2.5 V. 2.5 V. 12,288. 24,576 .. datasheet abstract.. |
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First line: ACEX Programmable Logic Family Data Sheet March ver. Features.. Preliminary Information Programmable Abstract: .. 102 130 130 130. 5 EP1K30 102 147 171 171. 5 EP1K50 102 147 186 249. EP1K100 147 186 333. Table 3 .. datasheet abstract.. |
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First line: Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER REJ03B0188-0104 Rev.1.04 DESCRIPTION Group 4-bit single-chip microcomputer Abstract: .. 102 130. TR1AB R17−R14 ← B R13−R10 ← A 117 130. TAB2 B ← T27−T24 A ← T23−T20 104 130. T2AB R2L7−R2L4 ← B T27−T24 ← B R2L3−R2L0 ← A T23−T20 ← A 102 130. T2R2L T27−T20 ← R2L7 .. datasheet abstract.. |
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First line: 455A Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER REJ03B0224-0101 Rev.1.01 Interrupt sources Key-on wakeup Abstract: .. 102 130. TR1AB R17−R14 ← B R13−R10 ← A 117 130. TAB2 B ← T27−T24 A ← T23−T20 104 130. T2AB R2L7−R2L4 ← B T27−T24 ← B R2L3−R2L0 ← A T23−T20 ← A 102 130. T2R2L T27−T20 ← R2L7 .. datasheet abstract.. |
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First line: STLC5466 CHANNEL-MULTI HDLC WITH 64KB / S SWITCHING MATRIX ASSOCIATED HDLCs with broadcasting capability Abstract: .. 102/130. 1.3.0.2 Memory obtained with 4M x 16 SDRAM circuit: The Address bits delivered by the Multi-HDLC for 4M x n SDRAM circuits are: ADM12/13 for Bank select corresponding with A21/22 delivered .. datasheet abstract.. |
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